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1. 发明授权

US08569177B2 Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08569177B2
公开(公告)日：2013-10-29
申请号：US13570433
申请日：2012-08-09
申请人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Muneo Furuse , Tomoyuki Tamura
发明人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Muneo Furuse , Tomoyuki Tamura
IPC分类号： H01L21/302
CPC分类号： H01J37/32449
摘要： A plasma processing apparatus is provided which includes an inert gas supply route connected to a process gas supply piping which supplies a process gas into a processing chamber in a vacuum vessel, a valve which opens or closes the inert gas supply route, and an adjuster which adjusts a flow rate of the inert gas. When processing of a sample is complete, an inert gas is supplied into the process gas supply piping so that a pressure in the process gas supply piping is maintained at a pressure higher than a pressure at which a compound of the process gas and a material of an inner wall of the process gas supply piping vaporizes.
摘要翻译：提供了一种等离子体处理装置，其包括连接到处理气体供应管线的惰性气体供给路径，该处理气体供应管路将处理气体供应到真空容器中的处理室中，打开或关闭惰性气体供应路径的阀，以及调节器调节惰性气体的流量。当样品的处理完成时，将惰性气体供应到工艺气体供应管道中，使得处理气体供应管道中的压力保持在高于处理气体和化合物的压力的压力工艺气体供应管道的内壁蒸发。

2. 发明申请

US20130189800A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 失效
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20130189800A1
公开(公告)日：2013-07-25
申请号：US13570433
申请日：2012-08-09
申请人： Tomohiro OHASHI , Akitaka Makino , Hiroho Kitada , Muneo Furuse , Tomoyuki Tamura
发明人： Tomohiro OHASHI , Akitaka Makino , Hiroho Kitada , Muneo Furuse , Tomoyuki Tamura
IPC分类号： H01L21/3065 , H01L21/66
CPC分类号： H01J37/32449
摘要： A plasma processing apparatus is provided which includes an inert gas supply route connected to a process gas supply piping which supplies a process gas into a processing chamber in a vacuum vessel, a valve which opens or closes the inert gas supply route, and an adjuster which adjusts a flow rate of the inert gas. When processing of a sample is complete, an inert gas is supplied into the process gas supply piping so that a pressure in the process gas supply piping is maintained at a pressure higher than a pressure at which a compound of the process gas and a material of an inner wall of the process gas supply piping vaporizes.
摘要翻译：提供了一种等离子体处理装置，其包括连接到处理气体供应管线的惰性气体供给路径，该处理气体供应管路将处理气体供应到真空容器中的处理室中，打开或关闭惰性气体供应路径的阀，以及调节器调节惰性气体的流量。当样品的处理完成时，将惰性气体供应到工艺气体供应管道中，使得处理气体供应管道中的压力保持在高于处理气体和化合物的压力的压力工艺气体供应管道的内壁蒸发。

3. 发明授权

US08197704B2 Plasma processing apparatus and method for operating the same 有权
标题翻译：等离子体处理装置及其操作方法
公开(公告)号：US08197704B2
公开(公告)日：2012-06-12
申请号：US12397447
申请日：2009-03-04
申请人： Takahisa Hashimoto , Hideki Kihara , Muneo Furuse
发明人： Takahisa Hashimoto , Hideki Kihara , Muneo Furuse
IPC分类号： C03C15/00
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/67017
摘要： The invention provides a plasma processing apparatus and a method for purging the apparatus, capable of preventing damage of components caused by pressure difference during purging operation of a vacuum reactor, and capable of preventing residual processing gas from remaining in the vacuum reactor. Inert gas is introduced through an inert gas feed port 233 on a side wall of a depressurized processing chamber (V1) 226 of a plasma processing apparatus, and the interior of the processing chamber (V1) 226 is brought to predetermined pressure by the inert gas, and thereafter, the inert gas is supplied to processing gas supply paths 213 and 216 (V2) communicated to a plurality of through holes 224 for introducing processing gas, so as to introduce the inert gas through the plurality of through holes 224 into the processing chamber (V1) 226.
摘要翻译：本发明提供一种等离子体处理装置和一种清洗装置的方法，能够防止在真空反应器的净化操作期间由压力差引起的部件的损坏，并且能够防止残留的处理气体残留在真空反应器中。惰性气体通过等离子体处理装置的减压处理室（V1）226的侧壁上的惰性气体供给口233引入，处理室（V1）226的内部被惰性气体然后将惰性气体供给到与多个用于引入处理气体的通孔224连通的处理气体供给路径213,216（V2），以将惰性气体通过多个通孔224引入到处理室（V1）226。

4. 发明授权

US08006340B2 Cleaning apparatus 有权
标题翻译：清洁装置
公开(公告)号：US08006340B2
公开(公告)日：2011-08-30
申请号：US12285177
申请日：2008-09-30
申请人： Kazuyuki Ikenaga , Tsutomu Tetsuka , Muneo Furuse
发明人： Kazuyuki Ikenaga , Tsutomu Tetsuka , Muneo Furuse
IPC分类号： A47L13/40
CPC分类号： H01L21/67028 , C23C16/4407 , H01L21/67092
摘要： The invention provides a cleaning apparatus for removing particles attached to the fine roughness on the surface of an insulating body coated on the metal surface of a vacuum processing apparatus. The present cleaning apparatus comprises an adhesive sheet 5 having a base material 51 and an adhesive surface 52, a conductive sheet 7 in contact with the base material 51, and a pressing member 11 for pressing the conductive sheet 7 onto the adhesive sheet 5, a voltage applying mechanism 9 for applying positive or negative voltage to the conductive sheet 7, and a pressing force controlling mechanism 8 for pressing the adhesive sheet 5 onto the curved surface 10 of the vacuum processing apparatus, wherein the pressing member 11 presses the conductive sheet 7 and the adhesive sheet 5 by a pressing force controlled via the pressing force controlling mechanism 8 in order to closely adhere the adhesive surface 52 of the adhesive sheet 5 to the curved surface of the insulating body 10 so as to remove particles attached to the insulating body 10, and positive or negative voltage is applied to the conductive sheet 7 to generate electrostatic attraction force so as to attract and remove particles attached to the insulating body 10.
摘要翻译：本发明提供了一种用于除去附着在涂覆在真空处理装置的金属表面上的绝缘体表面上的微细粗糙度的颗粒的清洁装置。本清洁装置包括具有基材51和粘合表面52的粘合片5，与基材51接触的导电片7和用于将导电片7压在粘合片5上的按压部件11，用于向导电片7施加正电压或负电压的电压施加机构9和用于将粘合片5压在真空处理装置的曲面10上的按压力控制机构8，其中按压部件11按压导电片7 和通过压力控制机构8控制的压力的粘合片5，以便将粘合片5的粘合表面52紧密地粘合到绝缘体10的弯曲表面，以除去附着在绝缘体上的颗粒如图10所示，并且正电压或负电压施加到导电片7以产生静电吸引力以便吸引和去除连接到绝缘体10的密封件。

5. 发明申请

US20100050938A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20100050938A1
公开(公告)日：2010-03-04
申请号：US12285169
申请日：2008-09-30
申请人： Tsutomu Tetsuka , Muneo Furuse
发明人： Tsutomu Tetsuka , Muneo Furuse
IPC分类号： C23C16/513
CPC分类号： H01J37/3299 , H01J37/321 , H01J37/32935
摘要： A plasma processing apparatus includes a sheet-like electrode for receiving high frequency signals from a plasma, a signal line connected to the electrode, a signal outputter which outputs high frequency signals from the electrode to the exterior, and a controller including of a physical quantity detecting unit, a measurement data storage unit, a measurement processing unit, and a control unit for controlling the apparatus parameters in response to signals from the measurement processing unit and performing control so as to stabilize the plasma condition. The signal line of the sheet-like electrode is formed between at least two layers of dielectric protection film formed on the surface of inner wall/inner cylinder 5 of a vacuum processing chamber in contact with plasma. The sheet-like electrode outputs an electric field/magnetic field.
摘要翻译：等离子体处理装置包括用于从等离子体接收高频信号的片状电极，连接到电极的信号线，从电极向外部输出高频信号的信号输出器，以及包括物理量检测单元，测量数据存储单元，测量处理单元和控制单元，用于响应于来自测量处理单元的信号来控制设备参数，并且执行控制以便稳定等离子体状态。片状电极的信号线形成在与等离子体接触的真空处理室的内壁/内筒5的表面上形成的至少两层介电保护膜之间。片状电极输出电场/磁场。

6. 发明申请

US20050051089A1 Plasma processing apparatus 审中-公开
公开(公告)号：US20050051089A1
公开(公告)日：2005-03-10
申请号：US10968249
申请日：2004-10-20
申请人： Susumu Tauchi , Masanori Kadotani , Muneo Furuse , Motohiko Yoshigai
发明人： Susumu Tauchi , Masanori Kadotani , Muneo Furuse , Motohiko Yoshigai
IPC分类号： C23C16/44 , H01J37/32 , C23C16/00
CPC分类号： H01J37/32458 , C23C16/4404 , H01J37/32477
摘要： It is required for the conventional plasma processing apparatus used for plasma processing in a reduced pressure atmosphere to replace the component parts such as earth member frequently as the expendable supplies because an insulation-processed layer and the substrate itself are thinned due to plasma and impurities contained in these thinned materials diffuse into plasma to result in adverse effect on a sample such as wafer, and thinning of the insulation-processed layer due to plasma and resultant electrical effect of the thinning of the insulation-processed layer cause the change of the state of plasma. The invention solves the problem by using electrically conductive ceramic that is formed of a baked material mainly composed of alumina for component parts of the apparatus in the plasma processing apparatus used for plasma processing of an sample to be processed such as wafer in a reduced pressure atmosphere.

7. 发明授权

US06796269B2 Apparatus and method for monitoring plasma processing apparatus 失效
标题翻译：用于监测等离子体处理装置的装置和方法
公开(公告)号：US06796269B2
公开(公告)日：2004-09-28
申请号：US10229027
申请日：2002-08-28
申请人： Ichiro Sasaki , Toshio Masuda , Muneo Furuse , Hideyuki Yamamoto
发明人： Ichiro Sasaki , Toshio Masuda , Muneo Furuse , Hideyuki Yamamoto
IPC分类号： C23C16509
CPC分类号： H01J37/32009 , H01J37/32935
摘要： The present apparatus comprises a vacuum process chamber 100 that contains an upper electrode 110 having a conductive plate 115 with gas supply holes for supplying a process gas and a lower electrode 130 having a platform on which a sample is to be mounted; process gas supply means 117 for supplying the process gas to the gas supply holes in the upper electrode 110 and exhaust means 106 for exhausting the vacuum process chamber; a high frequency power supply 121 for applying a high frequency power to the upper electrode to generate a plasma between the upper and lower electrodes; a high frequency bias power supply 122 for applying a high frequency power to the upper electrode to generate a direct current bias potential in the upper electrode; and abnormal discharge determination means 152 for determining whether an abnormal discharge has occurred or not based on the direct current bias potential generated in the upper electrode.
摘要翻译：本装置包括真空处理室100，其包含具有导电板115的上电极110，该导电板115具有用于供应处理气体的气体供应孔和具有其上将要安装样品的平台的下电极130; 用于将处理气体供给到上电极110中的气体供给孔和用于排出真空处理室的排气装置106的处理气体供给装置117; 用于向上部电极施加高频电力以在上部电极和下部电极之间产生等离子体的高频电源121; 用于向上部电极施加高频电力以在上部电极中产生直流偏置电位的高频偏置电源122; 以及异常放电判定单元152，用于根据在上部电极中产生的直流偏置电位来判定是否发生异常放电。

8. 发明授权

US08024831B2 Cleaning method 有权
标题翻译：清洗方法
公开(公告)号：US08024831B2
公开(公告)日：2011-09-27
申请号：US12849255
申请日：2010-08-03
申请人： Kazuyuki Ikenaga , Tsutomu Tetsuka , Muneo Furuse
发明人： Kazuyuki Ikenaga , Tsutomu Tetsuka , Muneo Furuse
IPC分类号： A47L13/40
CPC分类号： H01L21/67028 , C23C16/4407 , H01L21/67092
摘要： A cleaning method using a cleaning apparatus having an adhesive sheet, a conductive sheet in contact with a base material of the adhesive sheet, and a pressing member for pressing the conductive sheet onto the adhesive sheet. The pressing member includes a voltage applier, and a pressing force controller which presses the adhesive sheet onto a curved surface of a portion to be cleaned of a vacuum processing apparatus from above the conductive sheet. The method includes pressing the pressing member by a pressing force controlled via the pressing force controller to press the conductive sheet and the adhesive sheet to adhere an adhesive surface of the adhesive sheet to the curved surface of the portion to be cleaned, and applying a voltage to the conductive sheet or applying a voltage having a temporally changed polarity.
摘要翻译：使用具有粘合片的清洁装置，与粘合片的基材接触的导电片的清洁方法和用于将导电片压在粘合片上的按压部件。按压构件包括电压施加器和压力控制器，该压力控制器从导电片的上方将粘合片压在真空处理设备的待清洁部分的弯曲表面上。该方法包括：通过压力控制器控制的按压力来按压按压部件，按压导电片和粘合片，将粘合片的粘合面粘合到被清扫部的弯曲面上，或者施加具有时间上改变的极性的电压。

9. 发明申请

US20100206845A1 PLASMA PROCESSING APPARATUS AND METHOD FOR OPERATING THE SAME 有权
标题翻译：等离子体处理装置及其操作方法
公开(公告)号：US20100206845A1
公开(公告)日：2010-08-19
申请号：US12397447
申请日：2009-03-04
申请人： Takahisa Hashimoto , Hideki Kihara , Muneo Furuse
发明人： Takahisa Hashimoto , Hideki Kihara , Muneo Furuse
IPC分类号： H01L21/465 , C23C16/00 , C23C16/50
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/67017
摘要： The invention provides a plasma processing apparatus and a method for purging the apparatus, capable of preventing damage of components caused by pressure difference during purging operation of a vacuum reactor, and capable of preventing residual processing gas from remaining in the vacuum reactor. Inert gas is introduced through an inert gas feed port 233 on a side wall of a depressurized processing chamber (V1) 226 of a plasma processing apparatus, and the interior of the processing chamber (V1) 226 is brought to predetermined pressure by the inert gas, and thereafter, the inert gas is supplied to processing gas supply paths 213 and 216 (V2) communicated to a plurality of through holes 224 for introducing processing gas, so as to introduce the inert gas through the plurality of through holes 224 into the processing chamber (V1) 226.
摘要翻译：本发明提供一种等离子体处理装置和一种清洗装置的方法，能够防止在真空反应器的净化操作期间由压力差引起的部件的损坏，并且能够防止残留的处理气体残留在真空反应器中。惰性气体通过等离子体处理装置的减压处理室（V1）226的侧壁上的惰性气体供给口233引入，处理室（V1）226的内部被惰性气体然后将惰性气体供给到与多个用于引入处理气体的通孔224连通的处理气体供给路径213,216（V2），以将惰性气体通过多个通孔224引入到处理室（V1）226。

10. 发明申请

US20080236494A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20080236494A1
公开(公告)日：2008-10-02
申请号：US11836195
申请日：2007-08-09
申请人： TADAYOSHI KAWAGUCHI , Muneo Furuse
发明人： TADAYOSHI KAWAGUCHI , Muneo Furuse
IPC分类号： C23C16/00
CPC分类号： H01J37/32082 , H01J37/32623 , H01J2237/022
摘要： A plasma processing apparatus, comprising: a processing chamber arranged within a vacuum vessel; a sample table arranged within the processing chamber on which a sample to be processed is placed; electric field supplying means for supplying an electric field to form plasma within the processing chamber; a plate member formed of a dielectric material for constituting a ceiling plane of the processing chamber and transmitting the electric field; a cover member formed of a dielectric material for constituting a part of a side wall for the entire circumference of the processing chamber, facing the plasma, and propagating the electric field radiated from the plate member; and a conductive member internally arranged for almost the entire circumference of the cover member.
摘要翻译：一种等离子体处理装置，包括：设置在真空容器内的处理室; 布置在处理室内的待处理样品放置在其上的样品台; 电场供给装置，用于在处理室内提供电场以形成等离子体; 由介电材料形成的板构件，用于构成处理室的顶板面并传输电场; 由介电材料形成的盖构件，用于构成处理室的整个周边的面对等离子体的侧壁的一部分，并且传播从板构件辐射的电场; 以及导电构件，其内部布置成覆盖构件的几乎整个圆周。

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