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1. 发明授权

US08197704B2 Plasma processing apparatus and method for operating the same 有权
标题翻译：等离子体处理装置及其操作方法
公开(公告)号：US08197704B2
公开(公告)日：2012-06-12
申请号：US12397447
申请日：2009-03-04
申请人： Takahisa Hashimoto , Hideki Kihara , Muneo Furuse
发明人： Takahisa Hashimoto , Hideki Kihara , Muneo Furuse
IPC分类号： C03C15/00
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/67017
摘要： The invention provides a plasma processing apparatus and a method for purging the apparatus, capable of preventing damage of components caused by pressure difference during purging operation of a vacuum reactor, and capable of preventing residual processing gas from remaining in the vacuum reactor. Inert gas is introduced through an inert gas feed port 233 on a side wall of a depressurized processing chamber (V1) 226 of a plasma processing apparatus, and the interior of the processing chamber (V1) 226 is brought to predetermined pressure by the inert gas, and thereafter, the inert gas is supplied to processing gas supply paths 213 and 216 (V2) communicated to a plurality of through holes 224 for introducing processing gas, so as to introduce the inert gas through the plurality of through holes 224 into the processing chamber (V1) 226.
摘要翻译：本发明提供一种等离子体处理装置和一种清洗装置的方法，能够防止在真空反应器的净化操作期间由压力差引起的部件的损坏，并且能够防止残留的处理气体残留在真空反应器中。惰性气体通过等离子体处理装置的减压处理室（V1）226的侧壁上的惰性气体供给口233引入，处理室（V1）226的内部被惰性气体然后将惰性气体供给到与多个用于引入处理气体的通孔224连通的处理气体供给路径213,216（V2），以将惰性气体通过多个通孔224引入到处理室（V1）226。

2. 发明申请

US20100206845A1 PLASMA PROCESSING APPARATUS AND METHOD FOR OPERATING THE SAME 有权
标题翻译：等离子体处理装置及其操作方法
公开(公告)号：US20100206845A1
公开(公告)日：2010-08-19
申请号：US12397447
申请日：2009-03-04
申请人： Takahisa Hashimoto , Hideki Kihara , Muneo Furuse
发明人： Takahisa Hashimoto , Hideki Kihara , Muneo Furuse
IPC分类号： H01L21/465 , C23C16/00 , C23C16/50
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/67017
摘要： The invention provides a plasma processing apparatus and a method for purging the apparatus, capable of preventing damage of components caused by pressure difference during purging operation of a vacuum reactor, and capable of preventing residual processing gas from remaining in the vacuum reactor. Inert gas is introduced through an inert gas feed port 233 on a side wall of a depressurized processing chamber (V1) 226 of a plasma processing apparatus, and the interior of the processing chamber (V1) 226 is brought to predetermined pressure by the inert gas, and thereafter, the inert gas is supplied to processing gas supply paths 213 and 216 (V2) communicated to a plurality of through holes 224 for introducing processing gas, so as to introduce the inert gas through the plurality of through holes 224 into the processing chamber (V1) 226.
摘要翻译：本发明提供一种等离子体处理装置和一种清洗装置的方法，能够防止在真空反应器的净化操作期间由压力差引起的部件的损坏，并且能够防止残留的处理气体残留在真空反应器中。惰性气体通过等离子体处理装置的减压处理室（V1）226的侧壁上的惰性气体供给口233引入，处理室（V1）226的内部被惰性气体然后将惰性气体供给到与多个用于引入处理气体的通孔224连通的处理气体供给路径213,216（V2），以将惰性气体通过多个通孔224引入到处理室（V1）226。

3. 发明授权

US08897906B2 Wafer processing based on sensor detection and system learning 有权
标题翻译：基于传感器检测和系统学习的晶片处理
公开(公告)号：US08897906B2
公开(公告)日：2014-11-25
申请号：US13236818
申请日：2011-09-20
申请人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Hideki Kihara
发明人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Hideki Kihara
IPC分类号： H01L21/68 , H01L21/677
CPC分类号： H01L21/68 , H01L21/67742 , Y10S901/03 , Y10S901/46
摘要： A vacuum processing apparatus includes a robot connected to a vacuum container to carry a wafer on one of its two arms to or from a processing chamber; a unit to detect an amount of deviation of the wafer from a predetermined wafer mounting position on the arm that may occur when the robot carries the wafer into or out of the processing chamber; and an adjusting device to adjust the operation of the robot based on the detected amount of deviation. The adjusting device adjusts the robot operation based on the result of a teaching operation performed in advance. After being subjected to the initial teaching operation, the robot again undergoes a second teaching operation according to the information on the amount of wafer position deviation that is detected by moving the wafer in a predetermined transfer pattern, before the wafer processing is performed.
摘要翻译：真空处理装置包括连接到真空容器以将其两个臂中的一个上的晶片携带到处理室或从处理室移动的机器人; 用于检测当机器人将晶片进入或离开处理室时可能发生的晶片与在臂上的预定晶片安装位置的偏移量的单元; 以及基于检测到的偏差量来调整机器人的操作的调整装置。调整装置根据预先执行的教学动作的结果调整机器人的动作。在进行初始教导操作之后，根据关于在执行晶片处理之前通过以预定的传送图案移动晶片来检测的晶片位置偏差量的信息，机器人再次进行第二示教操作。

4. 发明授权

US08795467B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US08795467B2
公开(公告)日：2014-08-05
申请号：US12575514
申请日：2009-10-08
申请人： Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
发明人： Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： C23C16/4558 , C23C16/4404 , C23C16/45591 , C23C16/4581 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J37/32477 , H01J37/32495 , H01J37/32697 , H01L21/67069
摘要： A plasma processing apparatus includes a sample stage disposed at a lower part of a processing chamber, a bell jar made of an insulative material constituting an upper portion of a vacuum vessel, a coil antenna disposed outside and around the bell jar to which electric power is supplied so as to generate the plasma in a plasma generating space inside of the bell jar, and a Faraday shield mounted on the bell jar and disposed between an external surface of the bell jar and the coil antenna. A ring shaped member made of an electric conductive material is disposed inside of an inner surface of a ring portion of the processing chamber located below a skirt portion of the bell jar and constitutes a part of the processing chamber. The ring shaped member extends upwardly so as to cover a portion of an inner surface of the bell jar.
摘要翻译：等离子体处理装置包括设置在处理室的下部的样品台，由构成真空容器的上部的绝缘材料制成的钟罩，设置在电筒的外部和周围的线圈天线被提供以在钟罩内部的等离子体产生空间中产生等离子体，以及安装在钟罩上并设置在钟罩的外表面和线圈天线之间的法拉第屏蔽。由导电材料制成的环形构件设置在位于钟罩的裙部下方的处理室的环形部分的内表面的内侧，并构成处理室的一部分。环形构件向上延伸以覆盖钟罩的内表面的一部分。

5. 发明授权

US08460467B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US08460467B2
公开(公告)日：2013-06-11
申请号：US13177076
申请日：2011-07-06
申请人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
发明人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
IPC分类号： C23F1/00 , C23C16/00 , H01L21/677
CPC分类号： H01L21/6719 , H01L21/67017 , Y10S414/135 , Y10S414/139
摘要： A vacuum processing apparatus includes a transfer unit disposed at a center thereof, plural processing chambers, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas, and a mass flow controller unit interposed between two of the processing chambers for supplying gas to the chambers.
摘要翻译：一种真空处理装置，包括设置在其中心的转印单元，多个处理室，每个处理室具有用于支撑待处理物体的处理台，并使用气体进行处理;以及质量流量控制单元，用于向腔室供应气体的处理室。

6. 发明授权

US08062473B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US08062473B2
公开(公告)日：2011-11-22
申请号：US12324125
申请日：2008-11-26
申请人： Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
发明人： Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： C23C16/4558 , C23C16/4404 , C23C16/45591 , C23C16/4581 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J37/32477 , H01J37/32495 , H01J37/32697 , H01L21/67069
摘要： A plasma processing apparatus includes in a processing chamber, a sample stage, a bell jar, a coil antenna, a Faraday shield, and a gas ring member located below a skirt portion of the bell jar and above the sample stage. The gas ring member supplies a process gas to a plasma generating space inside the bell jar from a gas port disposed on an inner surface of the gas ring member. A ring shaped plate is disposed near a periphery of the Faraday shield and having an inner surface facing and covering along the inner surface of the gas ring member and being spaced from the inner surface of the gas ring member so as to delimit a gap therebetween.
摘要翻译：等离子体处理装置包括处理室，样品台，钟罩，线圈天线，法拉第屏蔽和位于钟罩的裙部下方并位于样品台上方的气环构件。气环构件从设置在气环构件的内表面上的气体端口向钟罩内的等离子体产生空间提供处理气体。环形板设置在法拉第罩的周边附近，并且具有面向气体环构件的内表面的内表面并且与气环构件的内表面间隔开，以限定其间的间隙。

7. 发明申请

US20090000741A1 Vacuum prcessing apparatus and vacuum processing method of sample 审中-公开
标题翻译：真空加工设备和样品的真空处理方法
公开(公告)号：US20090000741A1
公开(公告)日：2009-01-01
申请号：US12230465
申请日：2008-08-29
申请人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Shigeru Shirayone , Hideki Kihara
发明人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Shigeru Shirayone , Hideki Kihara
IPC分类号： C23F1/08
CPC分类号： H01L21/31116 , C23F4/00 , H01J37/32192 , H01J37/32935 , H01J2237/2001 , H01L21/31144 , H01L21/67109 , H01L21/67248 , H01L21/76802 , H01L21/76807 , H01L21/76831
摘要： A vacuum processing apparatus includes a vacuum container which can be depressurized, a sample holder inside of the vacuum container for mounting a sample to be processed, wherein films laid over a surface of the sample are etched with plasma generated in a space above the sample holder. The apparatus further includes a gas supply channel for feeding a heat conducting gas between a sample mounting surface and the backside of the sample, and a pressure control unit for changing stepwise the pressure of the gas supply channel between the sample mounting surface and the backside of the sample in accordance with the progress of the processing of the films of the sample by the etching.
摘要翻译：真空处理装置包括可以减压的真空容器，用于安装待处理样品的真空容器内部的样品保持器，其中在样品保持器上方的空间中产生的等离子体蚀刻样品表面上的膜。该设备还包括用于在样品安装表面和样品的背面之间供给导热气体的气体供给通道，以及用于逐步改变样品安装表面和背面之间的气体供应通道的压力的压力控制单元样品根据通过蚀刻处理样品膜的进度。

8. 发明申请

US20080011716A1 Plasma Processing Apparatus And Method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US20080011716A1
公开(公告)日：2008-01-17
申请号：US11778780
申请日：2007-07-17
申请人： Ryoji NISHIO , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
发明人： Ryoji NISHIO , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
IPC分类号： C23F1/00
CPC分类号： C23C16/4558 , C23C16/4404 , C23C16/45591 , C23C16/4581 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J37/32477 , H01J37/32495 , H01J37/32697 , H01L21/67069
摘要： A plasma processing method for a plasma processing apparatus which includes, a gas ring, a bell jar, an antenna, a sample table, a Faraday shield, and an RF power source circuit for supplying a power source voltage to the antenna and the Faraday shield. The RF power source circuit includes an RF power source, an antenna connected with the RF power source, a resonance circuit connected in series with the antenna and supplying a resonance voltage, a detection circuit for detecting the resonance voltage of the resonance circuit, and a comparator circuit for comparing the resonance voltage detected by the detection circuit with a predetermined set value. A constant of the resonance circuit is changed based on the result of comparison by the comparison circuit.
摘要翻译：一种等离子体处理装置的等离子体处理方法，包括气体环，钟罩，天线，样品台，法拉第屏蔽和用于向天线和法拉第屏蔽提供电源电压的RF电源电路。 RF电源电路包括RF电源，与RF电源连接的天线，与天线串联连接并提供谐振电压的谐振电路，用于检测谐振电路的谐振电压的检测电路，以及比较器电路，用于将由检测电路检测的谐振电压与预定设定值进行比较。谐振电路的常数根据比较电路的比较结果而改变。

9. 发明授权

US07296783B2 Vacuum processing apparatus 失效
标题翻译：真空加工设备
公开(公告)号：US07296783B2
公开(公告)日：2007-11-20
申请号：US11073652
申请日：2005-03-08
申请人： Hideki Kihara , Tsunehiko Tsubone , Nobuo Nagayasu
发明人： Hideki Kihara , Tsunehiko Tsubone , Nobuo Nagayasu
IPC分类号： F16K3/00
CPC分类号： F16K51/02 , F16K3/18
摘要： An inexpensive and reliable vacuum processing apparatus is provided. The vacuum processing apparatus comprises a sealed gate located between two vacuum vessels for allowing them to communicate with each other and a sample subjected to processing to be transferred from one of the vacuum vessels to the other therethrough; and a gate valve located on a path of the gate, the gate valve including a first and second valve body facing a first and second opening, respectively, and a shaft to which the valve bodies are coupled at one end thereof, the gate valve selectively opening and closing each of the openings. The gate valve includes an axial drive section coupled to the other end of the shaft for moving the shaft in the axial direction thereof, and a rotary drive section located between the one end and the other end of the shaft for rotating the shaft about a predetermined pivot crossing the axis of the shaft. The rotating force is transmitted to a spot on the shaft between the pivot and the other end along the axis of the shaft.
摘要翻译：提供廉价可靠的真空处理装置。真空处理装置包括位于两个真空容器之间的密封门，用于允许它们彼此连通，并且经受处理的样品从一个真空容器传递到另一个; 以及闸阀，其位于门的路径上，闸阀包括分别面向第一和第二开口的第一和第二阀体以及阀体在其一端连接的轴，选择性地选择阀门打开和关闭每个开口。所述闸阀包括与所述轴的另一端连接的轴向驱动部，所述另一端用于沿所述轴的轴向移动所述轴;以及旋转驱动部，位于所述轴的一端与另一端之间，用于使所述轴绕预定枢轴穿过轴的轴线。旋转力沿着轴的轴线传递到枢轴和另一端之间的轴上的点。

10. 发明申请

US20060169939A1 Vacuum processing apparatus 失效
标题翻译：真空加工设备
公开(公告)号：US20060169939A1
公开(公告)日：2006-08-03
申请号：US11073652
申请日：2005-03-08
申请人： Hideki Kihara , Tsunehiko Tsubone , Nobuo Nagayasu
发明人： Hideki Kihara , Tsunehiko Tsubone , Nobuo Nagayasu
IPC分类号： F16K25/00
CPC分类号： F16K51/02 , F16K3/18
摘要： An inexpensive and reliable vacuum processing apparatus is provided. The vacuum processing apparatus comprises a sealed gate located between two vacuum vessels for allowing them to communicate with each other and a sample subjected to processing to be transferred from one of the vacuum vessels to the other therethrough; and a gate valve located on a path of the gate, the gate valve including a first and second valve body facing a first and second opening, respectively, and a shaft to which the valve bodies are coupled at one end thereof, the gate valve selectively opening and closing each of the openings. The gate valve includes an axial drive section coupled to the other end of the shaft for moving the shaft in the axial direction thereof, and a rotary drive section located between the one end and the other end of the shaft for rotating the shaft about a predetermined pivot crossing the axis of the shaft. The rotating force is transmitted to a spot on the shaft between the pivot and the other end along the axis of the shaft.
摘要翻译：提供廉价可靠的真空处理装置。真空处理装置包括位于两个真空容器之间的密封门，用于允许它们彼此连通，并且经受处理的样品从一个真空容器传递到另一个; 以及闸阀，其位于门的路径上，闸阀包括分别面向第一和第二开口的第一和第二阀体以及阀体在其一端连接的轴，选择性地选择阀门打开和关闭每个开口。所述闸阀包括与所述轴的另一端连接的轴向驱动部，所述另一端用于沿所述轴的轴向移动所述轴;以及旋转驱动部，位于所述轴的一端与另一端之间，用于使所述轴绕预定枢轴穿过轴的轴线。旋转力沿着轴的轴线传递到枢轴和另一端之间的轴上的点。

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