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1. 发明授权

KR101328207B1 초임계 용매를 사용한 결정 제조 방법, 결정 성장 장치, 결정 및 디바이스 失效
标题翻译：用超临界溶剂生产水晶的方法，晶体生长装置，晶体和装置
公开(公告)号：KR101328207B1
公开(公告)日：2013-11-14
申请号：KR1020087002679
申请日：2006-06-29
申请人： 미쓰비시 가가꾸 가부시키가이샤 , 고쿠리츠다이가쿠호진 도호쿠다이가쿠
发明人： 가와바타신이치로 , 요시카와아키라 , 가가미타니유지 , 후쿠다츠구오
IPC分类号： C30B7/10 , C30B29/16 , C30B29/18 , C30B29/38
CPC分类号： C30B7/10 , C30B29/18 , C30B29/406 , Y10T117/1004
摘要： 용매와 임계 밀도가 상이한 물질을 반응 용기 내에 소정량 존재시켜 솔보써멀법에 의해 결정 성장을 실시함으로써, 결정의 석출 위치를 제어하고, 결정의 수율을 향상시키고, 또, 결정에 대한 불순물 혼입을 방지하여 결정을 고순도화하는 것을 목적으로 한다.
반응 용기 중에서, 초임계 상태 및/또는 아임계 상태의 용매, 그리고 원료를 사용하여 결정을 성장시키는 결정 제조 방법에 있어서, 그 반응 용기 중에, 하기 식 (1) 을 만족하고, 그 용매와의 임계 밀도차가 25％ 이상인 물질 (X) 를 존재시키고, 또한, 그 물질 (X) 의 양을 조정함으로써 결정의 석출 위치를 제어하는 것을 특징으로 한다.

2. 发明授权

KR101279756B1 단결정 실리콘 연속성장 시스템 및 방법 有权
标题翻译：单晶硅连续生长系统
公开(公告)号：KR101279756B1
公开(公告)日：2013-07-04
申请号：KR1020127013413
申请日：2005-02-25
申请人： 솔라익스 인코퍼레이티드
发明人： 벤더데이비드엘.
IPC分类号： C30B15/00 , C30B29/06 , H01L21/02
CPC分类号： C30B15/12 , C30B15/002 , C30B15/02 , C30B15/04 , C30B15/10 , C30B15/14 , C30B15/22 , C30B29/06 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032 , Y10T117/1052 , Y10T117/1056 , Y10T117/1068 , Y10T117/1072 , Y10T117/108 , Y10T117/1088 , Y10T117/1092
摘要： 본 발명은 단결정 잉곳을 연속성장시키기 위한 쵸크랄스키법에 기초한 개선된 시스템에 관한 것으로서, 낮은 가로세로비, 대직경 및 실질적으로 평탄한 도가니를 포함하며, 상기 도가니는 선택적으로 결정을 둘러싸는 웨어를 포함하고, 대직경, 낮은 가로세로비 도가니는 대류유동을 실질적으로 제거하며, 최종 단결정 실리콘 잉곳 내의 산소 함량을 감소시킨다. 성장 도가니에 용융 실리콘의 연속공급을 제공하는 개별적으로 레벨 제어된 실리콘 예비용융 챔버는 결정인상처리 동안 수직 이동의 필요성과 도가니 상승시스템을 효과적으로 제거하며, 도가니 아래의 복수의 가열기는 용탕을 가로지르는 대응 열구역을 형성하고, 가열기의 열출력은 개선된 결정 성장을 위해 용탕을 가로질러 결정/용탕 계면에 최적 열분배를 제공하기 위해 개별적으로 제어되며, 복수의 인상 챔버는 연속처리 및 고효율을 위해 제공되는 것을 특징으로 한다.

3. 发明公开

KR1020130010025A 비접촉 재료 특성을 일괄적으로 분석하기 위한 장치 및 방법 无效
标题翻译：用于共同分析非接触材料性质的设备和方法
公开(公告)号：KR1020130010025A
公开(公告)日：2013-01-24
申请号：KR1020127032491
申请日：2009-02-13
申请人： 비코 인스트루먼츠 인코포레이티드
发明人： 퀸윌리암이. , 벨로소프미하일 , 이동승 , 아모르에릭에이.
IPC分类号： H01L21/66
CPC分类号： H01L21/6875 , G01N21/645 , G01N21/6489 , G01N2021/6417 , H01L21/68764 , Y10T117/1004 , Y10T117/1008
摘要： 비접촉 재료 특성 분석을 수행하는 장치는 다수의 기판(12)을 유지하도록 된 웨이퍼 캐리어(10)와 광 발광 분광법을 수행하기 위한 장치와 같은 재료 특성 분석 장치(20)를 포함한다. 본 발명의 장치는 기판(12)을 포함해서 웨이퍼 캐리어(10)의 적어도 일부에 대하여 비접촉 재료 특성 분석을 수행하도록 되어 있다.

4. 发明公开

KR1020100049062A 단결정 직경의 검출방법 및 단결정 인상장치 有权
标题翻译：单晶直径检测方法和单晶拉伸装置
公开(公告)号：KR1020100049062A
公开(公告)日：2010-05-11
申请号：KR1020107003109
申请日：2008-07-30
申请人： 신에쯔 한도타이 가부시키가이샤
发明人： 야나기마치,타카히로 , 소노카와,스스므
IPC分类号： C30B15/22 , C30B29/06 , H01L21/02
CPC分类号： C30B15/28 , C30B15/26 , Y10T117/1004
摘要： A method for detecting the diameter of a single crystal grown by the Czochralski method is characterized in that the diameter of a single crystal is determined by means of both a camera and a load cell, the diameter measured by means of the camera is corrected by using the difference between the diameter measured by means of the camera and the diameter computed by using the load cell and a correction coefficient α predetermined according to the growth rate of the single crystal, and the corrected value is used as the diameter of the single crystal. A single crystal pull-up apparatus comprises both a camera and a load cell for determining the diameter of a pulled-up single crystal. With this, the accuracy of measurement of the diameter of a large-diameter heavy-weight crystal is improved, and yield enhancement and reduction of quality variation are achieved.
摘要翻译：用Czochralski法生长的单晶的直径检测方法的特征在于，通过照相机和称重传感器两者确定单晶的直径，通过使用相机测量的直径通过使用使用通过照相机测量的直径与通过使用负载单元计算的直径之间的差异以及根据单晶的生长速率预定的校正系数α和校正值被用作单晶的直径。单晶上拉装置包括用于确定上拉单晶直径的照相机和称重传感器。由此，能够提高大直径重量级晶体的直径的测定精度，能够提高成品率，降低质量变动。

5. 发明公开

KR1020100039378A 플라즈마 처리 장치 내의 ＲＦ 구동된 전극으로 가스를 전달하기 위한 ＲＦ 초크 有权
标题翻译： RF选择用于气体输送到等离子体处理装置中的RF驱动电极
公开(公告)号：KR1020100039378A
公开(公告)日：2010-04-15
申请号：KR1020107002226
申请日：2008-06-25
申请人： 어플라이드 머티어리얼스, 인코포레이티드
发明人： 쿠델라,요제프 , 소렌센,칼에이. , 화이트,존엠.
IPC分类号： H05H1/34
CPC分类号： H01F17/06 , C23C16/455 , C23C16/505 , H01F27/08 , H01F2017/065 , H01J37/32082 , H01J37/3244 , H01J2237/0206 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.
摘要翻译：在大面积等离子体处理系统中，工艺气体可以经由可被作为RF电极驱动的喷头组件引入腔室。接地的气体供给管与喷头电气隔离。气体供给管不仅可以提供处理气体，还可以提供从远程等离子体源清洁气体到处理室。气体供给管的内部可以保持在低RF场或零RF场，以避免气体进料管内的过早气体击穿，这可能导致气体源和喷头之间的寄生等离子体形成。通过馈送气体通过RF扼流圈，RF场和处理气体可以通过公共位置被引入处理室，从而简化室设计。

6. 发明公开

KR1020100014149A 성장 프로세스에서 실리콘 결정 잉곳의 직경을 제어하는 방법 및 장치 有权
标题翻译：用于控制生长过程中硅晶体直径的方法和装置
公开(公告)号：KR1020100014149A
公开(公告)日：2010-02-10
申请号：KR1020090069842
申请日：2009-07-30
申请人： 섬코 피닉스 코포레이션 , 가부시키가이샤 사무코
发明人： 오르셸벤노 , 커언스조엘 , 다카나시게이이치 , 토트폴커
IPC分类号： C30B15/20
CPC分类号： C30B15/22 , C30B29/06 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032
摘要： PURPOSE: A method and an apparatus for controlling a diameter of a silicon crystal ingot in a growth process are provided to improve the accuracy of a single crystal silicon ingot by reducing the variation of pull speed of a silicon crystal ingot. CONSTITUTION: In a method and an apparatus for controlling a diameter of a silicon crystal ingot in a growth process, a taper error detector defines an error between the desirous size and the measured size of the taper of a meniscus. A feedback controller(109) converts the taper error in relation to a pull rate of the single crystal silicon ingot. A diameter error detector defines an error between the target diameter and the measured diameter of the single crystal silicon ingot. The taper profiler(107) changes the diameter error to the desirous taper.
摘要翻译：目的：提供一种用于在生长过程中控制硅晶锭的直径的方法和装置，以通过减小硅晶锭的拉拔速度的变化来提高单晶硅锭的精度。构成：在用于在生长过程中控制硅晶锭的直径的方法和装置中，锥形误差检测器定义希望尺寸与测得的弯液面的锥度尺寸之间的误差。反馈控制器（109）相对于单晶硅锭的拉出速率转换锥度误差。直径误差检测器定义目标直径与单晶硅锭的测量直径之间的误差。锥形轮廓仪（107）将直径误差改变为希望的锥度。

7. 发明公开

KR1020090057029A 절단방법 및 에피택셜 웨이퍼의 제조방법 有权
标题翻译：切割方法和外延波形制造方法
公开(公告)号：KR1020090057029A
公开(公告)日：2009-06-03
申请号：KR1020097005661
申请日：2007-08-22
申请人： 신에쯔 한도타이 가부시키가이샤
发明人： 오이시히로시 , 나카마타다이스케
IPC分类号： H01L21/301 , B24B27/06 , B28D5/04
CPC分类号： B28D5/0064 , B24B27/0633 , B28D5/007 , B28D5/045 , Y10T83/0443 , Y10T83/9292 , Y10T117/10 , Y10T117/1004
摘要： In a cutting method, a wire is wound and hooked on a roller having a plurality of grooves, the wire is permitted to run to press an ingot while the roller is being supplied with a cutting slurry, and the ingot is cut into wafers. A test of cutting the ingot by supplying the roller with the cutting slurry at a controlled feeding temperature is previously performed, and relation between the axial displacement of the roller and the feeding temperature of the cutting slurry is examined. Based on the relation between the axial displacement of the roller and the feeding temperature of the cutting slurry, a feeding temperature profile of the cutting slurry is set, and based on the feeding temperature profile, the cutting slurry is fed. Thus, the ingot is cut by controlling the axial displacement of the roller, and warping of all the cut wafers is permitted to be in one direction. Thus, at the time of cutting the ingot by using a wire saw, the ingot can be cut easily with excellent repeatability by having warping of all the wafers in one direction.
摘要翻译：在切割方法中，将线缠绕并钩在具有多个凹槽的滚子上，当滚筒被供给切割浆料时，允许线材运行以压制锭，并将锭切成晶片。预先进行通过在受控进料温度下向辊子供给切割浆料来切割锭的试验，并且检查辊的轴向位移和切割浆料的进料温度之间的关系。基于辊的轴向位移与切割浆料的进料温度之间的关系，设定切割浆料的进料温度曲线，并且基于进料温度曲线，进料切割浆料。因此，通过控制辊的轴向位移来切割锭，并且允许所有切割的晶片的翘曲在一个方向上。因此，在通过使用线锯切割锭时，通过使所有晶片在一个方向上翘曲，可以容易地切割锭，并具有优异的重复性。

8. 发明公开

KR1020090037389A 도가니용 보호 시트 및 이 도가니용 보호 시트를 이용한 도가니 장치 有权
标题翻译：用于使用其的可变形和可变形装置的保护片
公开(公告)号：KR1020090037389A
公开(公告)日：2009-04-15
申请号：KR1020087028660
申请日：2007-07-09
申请人： 토요 탄소 가부시키가이샤
发明人： 히로세요시아키 , 유키데츠야 , 곤도데루히사 , 오카다오사무
IPC分类号： C30B15/10 , F27D99/00 , F27B14/10
CPC分类号： F27B14/10 , C30B15/10 , Y10T117/10 , Y10T117/1004 , Y10T117/1024 , Y10T117/1052
摘要： This invention provides a protective sheet for a crucible, which can prevent damage to an inner crucible, can suppress SiC formation on an outer crucible, and can transfer heat uniformly from the outer crucible to the inner crucible. The protective sheet is a protective sheet for a crucible formed of an expanded graphite, which sheet is disposed between an inner crucible (2) and an outer crucible (3) which constitute a crucible. In this protective sheet, the thermal conductivity in the surface direction is not less than 120 W/(m.K), and the gas permeability is less than 1.0 x 10-4 cm2/s. When the protective sheet is pressed and compressed by applying a pressure of 34.3 MPa in the thickness-wise direction, the compressibility is not less than 20%. The high compressibility offers advantages including that the effect of preventing damage to the inner crucible is high when the inner crucible is inserted, the workability can be improved, and the inclination of the inner crucible within the outer crucible can also be prevented. Furthermore, despite the high compressibility, the thermal conductivity can be maintained at a value high enough to heat the inner crucible uniformly. Furthermore, the gas shielding property can also be maintained. Accordingly, unfavorable phenomena such as the occurrence of SiC formation in the outer crucible and thickness reduction can be prevented.
摘要翻译：本发明提供了一种用于坩埚的保护片，其可以防止内坩埚的损坏，可以抑制外坩埚上的SiC形成，并且可以将热量从外坩埚均匀地传递到内坩埚。保护片是由膨胀石墨形成的坩埚用保护片，该片材设置在构成坩埚的内坩埚（2）和外坩埚（3）之间。在该保护片中，表面方向的热传导率为120W /（m·K）以上，透气度小于1.0×10 -4 cm 2 / s。当通过在厚度方向施加34.3MPa的压力来压制和压缩保护片时，压缩率不小于20％。高压缩性提供了这样的优点，即当内坩埚插入时，防止对内坩埚的损坏的效果高，可以提高加工性，并且还可以防止内坩埚内的坩埚倾斜。此外，尽管具有高的可压缩性，但是热导率可以保持在足够高的值以均匀地加热内坩埚。此外，还可以保持气体屏蔽性。因此，可以防止诸如在外坩埚中发生SiC形成和减小厚度的不利现象。

9. 发明公开

KR1020080103390A 결정화 장치 및 결정화 방법 失效
标题翻译：结晶装置和结晶方法
公开(公告)号：KR1020080103390A
公开(公告)日：2008-11-27
申请号：KR1020070101384
申请日：2007-10-09
申请人： 시마쯔 코포레이션
发明人： 아키타,노리타카 , 다카미,요시오
IPC分类号： H01L21/324 , H01L29/786
CPC分类号： B23K26/067 , B23K26/0613 , H01L21/02675 , Y10T117/1004 , Y10T117/1008 , H01L21/2026
摘要： A crystallization apparatus and the method for crystallization are provided to achieve the visibility and the crystallization by irradiating the laser light of visible light area having the intensity distribution. A crystallization apparatus comprises the illumination system(10) for the ultraviolet ray irradiating the laser light of the ultraviolet range onto the processed substrate with pulse; the visible light irradiation system(20) irradiating the laser light of the visible light to the area same with the area of the ultraviolet ray. The visible light irradiation system has the visible light laser light sources(11) which are arranged two dimensionally. The crystal growth is formed with the intensity distribution of the formed visible light laser light.
摘要翻译：提供结晶装置和结晶方法，以通过照射具有强度分布的可见光区域的激光来实现可视性和结晶。结晶装置包括用于紫外线的照明系统（10），该紫外线用脉冲将紫外线范围的激光照射到处理的基板上; 可见光照射系统（20）将可见光的激光照射到与紫外线的区域相同的区域。可见光照射系统具有二维布置的可见光激光光源（11）。晶体生长由形成的可见光激光的强度分布形成。

10. 发明公开

KR1020070119725A 박막의 라인 스캔 순차적 횡방향 고형화 有权
标题翻译：线扫描顺序的薄膜的侧向固化
公开(公告)号：KR1020070119725A
公开(公告)日：2007-12-20
申请号：KR1020077025550
申请日：2006-04-04
申请人： 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕
发明人： 임제임스에스 , 반데르윌트폴씨
IPC分类号： C30B21/04 , C30B28/08 , C30B13/00
CPC分类号： H01L21/02686 , B23K26/0738 , C30B13/00 , C30B13/24 , C30B29/06 , H01L21/02532 , H01L21/02678 , H01L21/2026 , H01L27/1285 , H01L27/1296 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A polycrystalline film is prepared by (a) providing a substrate having a thin film disposed thereon, said film capable of laser-induced melting, (b) generating a sequence of laser pulses having a fluence that is sufficient to melt the film throughout its thickness in an irradiated region, each pulse forming a line beam having a predetermined length and width, said width sufficient to prevent nucleation of solids in a portion of the thin film that is irradiated by the laser pulse, (c) irradiating a first region of the film with a first laser pulse to form a first molten zone, said first molten zone demonstrating a variation in width along its length to thereby define a maximum width (Wmax) and a minimum width (WmJn), wherein the first molten zone crystallizes upon cooling to form one or more laterally grown crystals, (d) laterally moving the film in the direction of lateral growth a distance that is greater than about one-half Wmax and less than Wmjn; and (e) irradiating a second region of the film with a second laser pulse to form a second molten zone having a shape that is substantially the same as the shape of the first molten zone, wherein the second molten zone crystallizes upon cooling to form one or more laterally grown crystals that are elongations of the one or more crystals in the first region.
摘要翻译：通过（a）提供具有设置在其上的薄膜的基板，所述膜能够进行激光诱导熔化，（b）产生具有足以使膜在整个厚度上熔化的能量密度的激光脉冲序列来制备多晶膜在照射区域中，每个脉冲形成具有预定长度和宽度的线束，所述宽度足以防止由激光脉冲照射的薄膜部分中的固体成核，（c）照射第一区域膜，其具有第一激光脉冲以形成第一熔融区，所述第一熔融区表现出沿其长度的宽度变化，从而限定最大宽度（Wmax）和最小宽度（WmJn），其中第一熔融区在冷却时结晶以形成一个或多个横向生长的晶体，（d）沿横向生长方向横向移动所述膜的距离大于约一半Wmax且小于Wmjn; 和（e）用第二激光脉冲照射所述膜的第二区域以形成具有与所述第一熔融区域的形状基本相同的形状的第二熔融区域，其中所述第二熔融区域在冷却时结晶以形成一个或更多横向生长的晶体，其是第一区域中的一种或多种晶体的伸长率。

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