基本信息:
- 专利标题: 단결정 실리콘 연속성장 시스템 및 방법
- 专利标题(英):System for continuous growing of monocrystalline silicon
- 专利标题(中):单晶硅连续生长系统
- 申请号:KR1020127013413 申请日:2005-02-25
- 公开(公告)号:KR101279756B1 公开(公告)日:2013-07-04
- 发明人: 벤더데이비드엘.
- 申请人: 솔라익스 인코퍼레이티드
- 申请人地址: **** Calle del Sol, Santa Clara, CA ***** U.S.A.
- 专利权人: 솔라익스 인코퍼레이티드
- 当前专利权人: 솔라익스 인코퍼레이티드
- 当前专利权人地址: **** Calle del Sol, Santa Clara, CA ***** U.S.A.
- 代理人: 김명신; 이동기; 박장규
- 优先权: US10/789,638 2004-02-27
- 国际申请: PCT/US2005/006058 2005-02-25
- 国际公布: WO2005084225 2005-09-15
- 主分类号: C30B15/00
- IPC分类号: C30B15/00 ; C30B29/06 ; H01L21/02
The present invention relates to an improved system based on a Czochralski method for continuously growing a single crystal ingot, comprising: a low aspect ratio, the large-diameter and substantially flat crucible, the crucible for the wear surrounding the selectively determine It includes, and large-diameter, low aspect ratio crucible, and substantially eliminate the convective flow, which reduces the oxygen content in the final single crystal silicon ingot. Individually-level control of the silicon pre-melt chamber to provide a continuous supply of molten silicon in the growth crucible corresponding across eliminates the need and the crucible rises system of vertical movement for a crystal pulling process effectively cross the heater melt of a plurality of down crucible form the heat zone and the heat output of the heater is separately controlled to provide optimal heat distribution in the crystal / molten metal interface across the molten metal for improved crystal growth, the plurality of the pulling chamber is provided for the continuous processing and efficiency It is characterized.
公开/授权文献:
- KR1020120076376A 단결정 실리콘 연속성장 시스템 및 방법 公开/授权日:2012-07-09