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1. 发明授权

KR101113878B1 수직형 발광 소자 및 그 제조방법 有权
标题翻译：具有垂直拓扑的发光二极管及其制造方法
公开(公告)号：KR101113878B1
公开(公告)日：2012-03-09
申请号：KR1020087030045
申请日：2007-01-26
申请人： 엘지전자 주식회사 , 엘지이노텍 주식회사
发明人： 장준호 , 최재완 , 배덕규 , 조현경 , 박종국 , 김선정 , 이정수
IPC分类号： H01L33/12
CPC分类号： H01L33/405 , H01L33/0075 , H01L33/0079 , H01L33/04 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/44 , H01L2933/0016 , H01L2933/0083
摘要： 본발명은수직형발광소자에관한것으로특히, 발광소자의발광효율과신뢰성을향상시키고, 양산성을향상시킬수 있는수직형발광소자및 그제조방법에관한것이다. 이러한본 발명은, 기판상에반도체층형성하는단계와; 상기반도체층상에제1전극을형성하는단계와; 상기제1전극상에지지층을형성하는단계와; 상기기판과상기반도체층사이의계면에스트레스성음파의발생시킴으로써상기기판을상기반도체층으로부터분리하는단계와; 상기기판이분리되어드러난반도체층상에제2전극을형성하는단계를포함하여구성되는것이바람직하다.
摘要翻译：这里公开了具有垂直拓扑结构的LED。特别地，提供了具有能够提高发光效率和可靠性的垂直拓扑结构的LED并且还能够实现批量生产率的方法及其制造方法。该方法包括在衬底上形成半导体层; 在所述半导体层上形成第一电极; 在所述第一电极上形成支撑层; 在衬底和半导体层之间的界面处产生声应力波，从而将衬底与半导体层分离; 以及在通过所述衬底的分离而暴露的所述半导体层上形成第二电极。

2. 发明公开

KR1020070122120A 수직형 발광 다이오드의 제조방법 无效
标题翻译：用于制造垂直型发光二极管的方法
公开(公告)号：KR1020070122120A
公开(公告)日：2007-12-28
申请号：KR1020060093465
申请日：2006-09-26
申请人： 엘지전자 주식회사 , 엘지이노텍 주식회사
发明人： 장준호 , 이정수 , 박종국
IPC分类号： H01L33/12
摘要： A method of manufacturing a vertical light emitting diode is provided to remarkably increase a separation speed of a sapphire substrate by generating an acoustic stress wave between the substrate and a GaN-based layer. A sapphire substrate is separated from GaN-based layers after a conductive support layer is formed. The separation process of the substrate from GaN-based layers is carried out by attaching a vacuum chuck onto the substrate and the conductive support layer and then generating an acoustic stress wave between the sapphire substrate and the GaN-based layers. A contact layer(600) is formed on the GaN-based layers which are physically separated from by the conductive support layer filling a trench. The contact layer has an interface layer(610) directly contacting the GaN-based layers, and a contact pad(620) formed on the interface layer.
摘要翻译：提供一种制造垂直发光二极管的方法，通过在衬底和GaN基层之间产生声应力波来显着增加蓝宝石衬底的分离速度。在形成导电支撑层之后，蓝宝石衬底与GaN基层分离。通过将真空卡盘附着到基板和导电支撑层上，然后在蓝宝石基板和GaN基层之间产生声应力波来进行基板与GaN基层的分离处理。在GaN基层上形成接触层（600），其与填充沟槽的导电支撑层物理分离。接触层具有直接接触GaN基层的界面层（610）和形成在界面层上的接触焊盘（620）。

3. 发明公开

KR1020090012268A 수직형 발광 소자 및 그 제조방법 有权
标题翻译：具有垂直拓扑的发光二极管及其制造方法
公开(公告)号：KR1020090012268A
公开(公告)日：2009-02-02
申请号：KR1020087030045
申请日：2007-01-26
申请人： 엘지전자 주식회사 , 엘지이노텍 주식회사
发明人： 장준호 , 최재완 , 배덕규 , 조현경 , 박종국 , 김선정 , 이정수
IPC分类号： H01L33/12
CPC分类号： H01L33/405 , H01L33/0075 , H01L33/0079 , H01L33/04 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/44 , H01L2933/0016 , H01L2933/0083
摘要： A vertical type emitting device and the manufacturing method thereof are provided to improve the productivity and the separation yield by performing efficiently the process of separating the semiconductor layer of the vertical type emitting device. The semiconductor layer is formed in the top of the substrate. The first electrode(410) is formed on the semiconductor layer. The support layer is formed on the first electrode. The substrate is separated from the semiconductor layer by generating the stress sound wave in the interface between the semiconductor layer and the substrate. The second electrode is formed on the semiconductor layer. The chip separation region of the semiconductor layer is etched to form a trench between the process of forming the semiconductor layer and the process of forming the first electrode and the process.
摘要翻译：提供了一种垂直型发射器件及其制造方法，其通过有效地执行垂直型发射器件的半导体层的分离工艺来提高生产率和分离产率。半导体层形成在基板的顶部。第一电极（410）形成在半导体层上。支撑层形成在第一电极上。通过在半导体层和衬底之间的界面中产生应力声波，将衬底与半导体层分离。第二电极形成在半导体层上。蚀刻半导体层的芯片分离区域，以在形成半导体层的工艺和形成第一电极的工艺和工艺之间形成沟槽。

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