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31. 发明公开

KR20120084701A A light emitting device having a plurality of light emitting cells and menufacturing method thereof 有权
标题翻译：具有多种发光细胞的发光装置及其选择方法
公开(公告)号：KR20120084701A
公开(公告)日：2012-07-30
申请号：KR20120066118
申请日：2012-06-20
申请人： SEOUL OPTO DEVICE CO LTD
发明人： KAL DAE SUNG , KIM DAE WON
IPC分类号： H01L33/36 , H01L33/62
CPC分类号： H01L33/502 , H01L27/156 , H01L33/62 , H01L2933/0041
摘要： PURPOSE: A light emitting device having a plurality of light emitting cells and a manufacturing method thereof are provided to improve a CRI(Color Rendering Index) property certainly necessary for using an LED as a light source for lighting. CONSTITUTION: A plurality of first light emitting cells emits first wave light. The plurality of first light emitting cells is formed on a growth substrate and respectively comprises a bottom semiconductor layer(20), a top semiconductor layer(40), and an active layer(30). A second light emitting cell emits second wave light. The second light emitting cell is formed on the growth substrate and bonded with a position where a single cell from the plurality of light emitting cells emitting the first wave light is removed. Wiring(50) electrically connects light emitting cells on the growth substrate. The wiring connects the bottom semiconductor layer of each light emitting cell with the top semiconductor layer adjacent to the semiconductor layer.
摘要翻译：目的：提供具有多个发光单元的发光器件及其制造方法，以提高使用LED作为照明光源所必需的CRI（显色指数）性质。构成：多个第一发光单元发射第一波光。多个第一发光单元形成在生长衬底上，并且分别包括底部半导体层（20），顶部半导体层（40）和有源层（30）。第二发光单元发射第二波光。第二发光单元形成在生长衬底上，并且与从发射第一波光的多个发光单元中的单个电池去除的位置结合。导线（50）电连接生长衬底上的发光单元。布线将每个发光单元的底部半导体层与与半导体层相邻的顶部半导体层连接。

32. 发明公开

KR20120062983A Light emitting diode including optical structure and method of fabracating the same 审中-公开
标题翻译：发光二极管，包括光学结构及其制作方法
公开(公告)号：KR20120062983A
公开(公告)日：2012-06-15
申请号：KR20100123948
申请日：2010-12-07
申请人： SEOUL OPTO DEVICE CO LTD
发明人： LEE JUN SEOK
IPC分类号： H01L33/22
CPC分类号： H01L33/10 , H01L21/0273 , H01L2933/0091
摘要： PURPOSE: A light emitting diode which includes an optical structure and a manufacturing method thereof are provided to improve light emission efficiency of the light emitting diode by scattering or reflecting light emitted from an active layer. CONSTITUTION: A light emitting diode comprises a substrate and a semiconductor structure(120). The semiconductor structure is arranged on the substrate. The semiconductor structure is comprised of a plurality of layers which includes a first conductivity type semiconductor layer(122), an active layer, and a second conductivity type semiconductor layer(126). An optical structure(130) is arranged inside a single layer among the layers of the semiconductor structure. The optical structure comprises an open region.
摘要翻译：目的：提供包括光学结构及其制造方法的发光二极管，以通过散射或反射从有源层发射的光来提高发光二极管的发光效率。构成：发光二极管包括衬底和半导体结构（120）。半导体结构布置在基板上。半导体结构由包括第一导电类型半导体层（122），有源层和第二导电类型半导体层（126）的多个层组成。光学结构（130）布置在半导体结构的层之间的单层内。光学结构包括开放区域。

33. 发明公开

KR20120047689A Light emitting diode and method for fabricating the same 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：KR20120047689A
公开(公告)日：2012-05-14
申请号：KR20100109390
申请日：2010-11-04
申请人： SEOUL OPTO DEVICE CO LTD
发明人： LEE JUN SEOK
IPC分类号： H01L33/22
CPC分类号： H01L33/22 , H01L33/405 , H01L2933/0083
摘要： PURPOSE: A light emitting diode and a manufacturing method thereof are provided to easily form a pattern for optical extraction efficiency improvement on the boundary of level difference by using pattern holes formed on a photosensitive film by a phase shifter. CONSTITUTION: A p-type compound semiconductor layer(27) is formed on a transparent electrode layer(29). A light emitting lamination including the transparent electrode layer and epitaxial layers is formed on substrate. A photosensitive film(40) is formed on the transparent electrode layer. A first pattern hole(42) and a second pattern hole are formed on the photosensitive film. A phase shifted mask(50) is arranged on the photosensitive film. The phase shifted mask comprises a main light-transmitting part(52) and a phase shifter(54). The photosensitive film is exposed to light of special wavelength through the phase shifted mask.
摘要翻译：目的：提供一种发光二极管及其制造方法，通过使用通过移相器在感光膜上形成的图案孔，容易地形成用于在电平差的边界上提高光学提取效率的图案。构成：在透明电极层（29）上形成p型化合物半导体层（27）。在基板上形成包括透明电极层和外延层的发光层叠体。在透明电极层上形成感光膜（40）。在感光膜上形成第一图案孔（42）和第二图案孔。相移掩模（50）布置在感光膜上。相移掩模包括主光透射部分（52）和移相器（54）。感光膜通过相移掩模曝光成特殊波长的光。

34. 发明公开

KR20120039811A High efficiency light emitting diode and method of fabricating the same 有权
标题翻译：高效发光二极管及其制造方法
公开(公告)号：KR20120039811A
公开(公告)日：2012-04-26
申请号：KR20100101227
申请日：2010-10-18
申请人： SEOUL OPTO DEVICE CO LTD
发明人： LIM HONG CHOL , KIM CHANG YOUN , KIM DA HYE
IPC分类号： H01L33/44 , H01L33/46
CPC分类号： H01L33/44 , H01L33/10 , H01L33/382 , H01L2933/0008
摘要： PURPOSE: A high efficiency light emitting diode and a manufacturing method thereof are provided to improve optical extraction efficiency of the light emitting diode by an upper insulating layer having an unevenness plane according to the rough surface of a semiconductor stacked stru. CONSTITUTION: A semiconductor stacked structure(30) is formed in a supporting substrate(41). The semiconductor stacked structure comprises a p-type compound semiconductor layer(29), an active layer(27), and an n-type compound semiconductor layer(25). A protective layer(31) is formed between the supporting substrate and the semiconductor stacked structure. A reflective metal layer(33) is formed between the protective layer and the supporting substrate. A barrier metal layer(35) is formed between the supporting substrate and the reflective metal layer. A first electrode pad is formed on the semiconductor stacked structure.
摘要翻译：目的：提供一种高效率的发光二极管及其制造方法，以通过具有根据半导体堆叠结构的粗糙表面的不平坦面的上绝缘层来提高发光二极管的光提取效率。构成：在支撑基板（41）上形成半导体堆叠结构（30）。半导体堆叠结构包括p型化合物半导体层（29），有源层（27）和n型化合物半导体层（25）。在支撑基板和半导体堆叠结构之间形成保护层（31）。在保护层和支撑基板之间形成反射金属层（33）。在支撑基板和反射金属层之间形成阻挡金属层（35）。第一电极焊盘形成在半导体堆叠结构上。

35. 发明公开

KR20120039587A Wafer level led package 审中-公开
标题翻译： WAFER LEVEL LED包装
公开(公告)号：KR20120039587A
公开(公告)日：2012-04-25
申请号：KR20120022866
申请日：2012-03-06
申请人： SEOUL OPTO DEVICE CO LTD
发明人： SEO WON CHEOL
IPC分类号： H01L33/48
CPC分类号： H01L24/97 , H01L2224/16 , H01L2924/12041 , H01L2924/15787 , H01L2924/00
摘要： PURPOSE: A wafer level light-emitting diode package is provided to improve the reliability of a product by preventing thermal transformation and moisture penetration through a bonding plane and to improve reflecting efficiency. CONSTITUTION: An insulation reflecting layer(112) and an electrode pattern are formed on the upper side of a lower plate(110). The lower plate comprises conductive via hole(118) which electrically interlinks an interval of the electrode pattern and an external terminal. The external terminal comprises the electrode pattern which touches a lower end of the conductive via hole, and a eutectic electrode which is laminated on the electrode pattern. An upper plate(120) forms an opening for a cavity in a region corresponding to the electrode pattern. A light emitting diode(130) is mounted on the electrode pattern. The light emitting diode is composed of a light emitting structure(131).
摘要翻译：目的：提供晶圆级发光二极管封装，通过防止热变形和水分穿透接合平面，提高反射效率，提高产品的可靠性。构成：在下板（110）的上侧形成绝缘反射层（112）和电极图案。下板包括导电通孔（118），其电连接电极图案的间隔和外部端子。外部端子包括接触导电通孔的下端的电极图案和层压在电极图案上的共晶电极。上板（120）在对应于电极图案的区域中形成用于空腔的开口。发光二极管（130）安装在电极图案上。发光二极管由发光结构（131）构成。

36. 发明公开

KR20120036927A Light emitting diode and method of fabricating the same 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：KR20120036927A
公开(公告)日：2012-04-18
申请号：KR20120032497
申请日：2012-03-29
申请人： SEOUL OPTO DEVICE CO LTD
发明人： KIM JONG KYU , LEE SUM GEUN , JIN SANG KI , SHIN JIN CHEOL , LEE SO RA
IPC分类号： H01L33/62 , H01L33/44
CPC分类号： H01L33/62 , H01L27/156 , H01L33/38 , H01L33/42 , H01L2933/0066
摘要： PURPOSE: A light emitting diode and a manufacturing method thereof are provided to improve optical extraction efficiency by differently controlling a tilt angle of a bottom semiconductor layer and a mesa. CONSTITUTION: A plurality of light emitting cells(56) is located on a substrate(51). A transparent electrode layer(61) is located on the upper side of each light emitting cell. A plurality of wires(69) electrically interlinks adjacent light emitting cells. An insulating layer(67) is located between the wires and the light emitting cells. The insulating layer prevents a short circuit within the light emitting cell due to the wires. The light emitting cell comprises a bottom semiconductor layer, an active layer, and a top semiconductor layer. The active layer is placed between the bottom semiconductor layer and the top semiconductor layer.
摘要翻译：目的：提供一种发光二极管及其制造方法，以通过不同地控制底部半导体层和台面的倾斜角来提高光学提取效率。构成：多个发光单元（56）位于基板（51）上。透明电极层（61）位于每个发光单元的上侧。多个导线（69）电相互连接相邻的发光单元。绝缘层（67）位于导线和发光单元之间。绝缘层防止由于导线而导致发光单元内的短路。发光单元包括底部半导体层，有源层和顶部半导体层。有源层位于底部半导体层和顶部半导体层之间。

37. 发明公开

KR20120015651A Light emitting diode with improved light extraction efficiency 审中-公开
标题翻译：具有改进的光提取效率的发光二极管
公开(公告)号：KR20120015651A
公开(公告)日：2012-02-22
申请号：KR20100077924
申请日：2010-08-12
申请人： SEOUL OPTO DEVICE CO LTD
发明人： YANG JEONG HEE , KIM KYOUNG WAN , YOON YEO JIN , KIM JAE MOO , LEE KEUM JU
IPC分类号： H01L33/44 , H01L33/00 , H01L33/46
CPC分类号： H01L33/08 , H01L33/007 , H01L33/10 , H01L33/20 , H01L33/24 , H01L33/38 , H01L33/42 , H01L33/46 , H05B33/06
摘要： PURPOSE: A light emitting diode having improved optical extraction efficiency is provided to prevent a current to be excessively focused on the crystal defect of light emission regions by partitioning a light-emitting structure into a plurality of light emitting regions. CONSTITUTION: A light-emitting structure including light emitting regions(LE1,LE2) is formed in the top of a substrate. The light-emitting structure comprises a first electrical conductive semiconductor layer, an active layer, and a second electrical conductive semiconductor layer. A first electrode pad(35) is electrically connected to the first electrical conductive semiconductor layer. A second electrode pad(33) is located on the upper side of the substrate. An insulation reflecting layer(31) separates the second electrode pad from the light-emitting structure. A pattern(LEE) of optical extraction elements is located on the upper side of the second electrical conductive semiconductor layer.
摘要翻译：目的：提供具有提高的光提取效率的发光二极管，以通过将发光结构分隔成多个发光区域来防止电流过度聚焦于发光区域的晶体缺陷。构成：在衬底的顶部形成包括发光区域（LE1，LE2）的发光结构。发光结构包括第一导电半导体层，有源层和第二导电半导体层。第一电极焊盘（35）电连接到第一导电半导体层。第二电极焊盘（33）位于衬底的上侧。绝缘反射层（31）将第二电极焊盘与发光结构分离。光提取元件的图案（LEE）位于第二导电半导体层的上侧。

38. 发明公开

KR20120014750A Light emitting diode having distributed bragg reflector 有权
标题翻译：具有分布式BRAGG反射器的发光二极管
公开(公告)号：KR20120014750A
公开(公告)日：2012-02-20
申请号：KR20100076914
申请日：2010-08-10
申请人： SEOUL OPTO DEVICE CO LTD
发明人： SUH DUK IL , KIM JAE MOO , KIM KYOUNG WAN , YOON YEO JIN , KIM YE SEUL , OH SANG HYUN , LEE JIN WOONG
IPC分类号： H01L33/10
CPC分类号： H01L33/10 , H01L33/22 , H01L33/42 , H01L33/58 , H01L2924/12041 , H01L2933/0016 , H01L2933/0058
摘要： PURPOSE: A light emitting diode having a distributed Bragg reflector is provided to improve the light extraction efficiency of a light emitting diode by forming a top insulating layer and a transparent conductive layer into a refractive index grading layer. CONSTITUTION: A light emitting structure(30) includes an active layer(27). An top insulating layer(37) covers the light emitting structure. A distributed Bragg reflector(40) is arranged at a lower part of a substrate. The distributed Bragg reflector reflects light emitted from the light emitting structure. A metal reflective layer(41) is arranged at the lower part of the distributed Bragg reflector.
摘要翻译：目的：提供一种具有分布布拉格反射器的发光二极管，通过将顶部绝缘层和透明导电层形成折射率分级层来提高发光二极管的光提取效率。构成：发光结构（30）包括有源层（27）。顶部绝缘层（37）覆盖发光结构。分布式布拉格反射器（40）布置在基板的下部。分布式布拉格反射器反射从发光结构发射的光。金属反射层（41）布置在分布布拉格反射器的下部。

39. 发明公开

KR20100109166A Light emitting diode having nitride based semiconductor layer comprising indium 审中-公开
标题翻译：具有基于氮化物的半导体层的发光二极管包含印刷
公开(公告)号：KR20100109166A
公开(公告)日：2010-10-08
申请号：KR20090027626
申请日：2009-03-31
申请人： SEOUL OPTO DEVICE CO LTD
发明人： MOON SOO YOUNG , CHOI HYO SHIK , LEE KYU HO , JIN SANG KI
IPC分类号： H01L33/06
摘要： PURPOSE: A light emitting diode is provided to improve the reliability of a device and light efficiency by improving the contact resistance between a p-type nitride semiconductor layer and a transparent layer. CONSTITUTION: An active region(29) is formed on an n-type nitride semiconductor layer(27). An active region has a multiple quantum well. The active region comprises an InGaN quantum-well layer. The p-type nitride semiconductor layer(31) is formed on the active region. The p-type nitride semiconductor layer comprises Al. The nitride semiconductor layer(33) is formed on the p-type nitride semiconductor layer. The nitride semiconductor layer comprises the indium. A transparent electrode layer is formed on the nitride semiconductor layer.
摘要翻译：目的：提供一种发光二极管，通过改善p型氮化物半导体层和透明层之间的接触电阻来提高器件的可靠性和光效。构成：在n型氮化物半导体层（27）上形成有源区（29）。活性区域具有多重量子阱。有源区包括InGaN量子阱层。 p型氮化物半导体层（31）形成在有源区上。 p型氮化物半导体层包括Al。氮化物半导体层（33）形成在p型氮化物半导体层上。氮化物半导体层包括铟。在氮化物半导体层上形成透明电极层。

40. 发明公开

KR20100080668A Light emitting diode and the method of fabricating the same 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：KR20100080668A
公开(公告)日：2010-07-12
申请号：KR20090000062
申请日：2009-01-02
申请人： SEOUL OPTO DEVICE CO LTD
发明人： NAM KI BUM , YOON YEO JIN , HAN YU DAE
IPC分类号： H01L33/02 , H01L33/20
摘要： PURPOSE: A light emitting diode and a method for manufacturing the same are provided to improve internal quantum efficiency by optimally setting the mesa etching depth of a first conductive semiconductor layer. CONSTITUTION: A first conductive semiconductor layer(55) is formed on a substrate(51). An active layer is formed on a part of the first conductive semiconductor layer. A second conductive semiconductor layer(59) is formed on the active layer. A first electrode(85) is formed on the first conductive semiconductor layer. A second electrode is formed on the second conductive semiconductor layer. The upper side of the first electrode is lower than the active layer.
摘要翻译：目的：提供一种发光二极管及其制造方法，以通过最佳地设定第一导电半导体层的台面蚀刻深度来提高内部量子效率。构成：在基板（51）上形成第一导电半导体层（55）。在第一导电半导体层的一部分上形成有源层。在有源层上形成第二导电半导体层（59）。第一电极（85）形成在第一导电半导体层上。第二电极形成在第二导电半导体层上。第一电极的上侧低于有源层。

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