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1. 发明专利

JP2007005594A Semiconductor optical element and module using same 审中-公开
标题翻译：半导体光学元件和使用相同的模块
公开(公告)号：JP2007005594A
公开(公告)日：2007-01-11
申请号：JP2005184588
申请日：2005-06-24
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： AOKI MASAHIRO
IPC分类号： H01S5/125
CPC分类号： H01S5/125 , H01S5/0428 , H01S5/32391
摘要： PROBLEM TO BE SOLVED: To obtain a single transversal-mode, direct modulation laser of a 1,300 nm wavelength band which simultaneously achieves a chip optical output of several mW and low current operation, and also a laser light source which is excellent even in economy by obtaining output characteristics of a vertical cavity surface emitting laser.
SOLUTION: A semiconductor laser of a multilayered structure formed on a predetermined semiconductor substrate includes an active region for radiating one of layers of the multilayered structure with a laser beam, and a distribution Bragg reflection layer. The active region has a length of 10-100 μm. A distribution Bragg reflection type laser is formed wherein the active region generates a laser optical signal by turning on and off current injection into the active region.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了获得单个横向模式的1300nm波长带的直接调制激光器，其同时实现几个mW的芯片光输出和低电流操作，并且还具有甚至优异的激光光源通过获得垂直腔表面发射激光器的输出特性。解决方案：形成在预定半导体衬底上的多层结构的半导体激光器包括用激光束照射多层结构层之一的有源区和分布布拉格反射层。有源区的长度为10-100μm。形成分布布拉格反射型激光器，其中有源区域通过导通和截止当前注入到有源区域中而产生激光光信号。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP3859839B2 Index-guided semiconductor laser device 失效
公开(公告)号：JP3859839B2
公开(公告)日：2006-12-20
申请号：JP26656697
申请日：1997-09-30
申请人：富士フイルムホールディングス株式会社
发明人：敏明福永
IPC分类号： H01S5/00 , H01S5/22 , H01S5/20 , H01S5/223 , H01S5/323
CPC分类号： H01S5/22 , H01S5/20 , H01S5/2004 , H01S5/204 , H01S5/222 , H01S5/2231 , H01S5/32308 , H01S5/32333 , H01S5/3235 , H01S5/32391

3. 发明专利

JPS59181589A Manufacture of semiconductor laser 失效
标题翻译：半导体激光器的制造
公开(公告)号：JPS59181589A
公开(公告)日：1984-10-16
申请号：JP5362983
申请日：1983-03-31
申请人： Fujitsu Ltd
发明人： KUMAI TSUGIO , ISHIKAWA HIROSHI
IPC分类号： H01S5/00 , H01S5/042 , H01S5/24 , H01S5/323
CPC分类号： H01S5/24 , H01S5/32391
摘要： PURPOSE:To obtain excellent characteristics of a VSB laser as well as to enhance the reproducibility of a V-shaped groove and the manufacturing yield of the laser by a method wherein the surface of a semiconductor substrate is treated with a treating agent, which is controllable the etching rate of the substrate under the interface between the substrate and a mask, before the etching mask, which is used at the forming time of the V-shaped groove, is applied on the semiconductor substrate. CONSTITUTION:At the manufacturing time of a VSB laser, which is made comprising an active layer embedded in a stripe-shaped groove, the surface of a semiconductor substrate is treated with a treating agent which is controllable the etching rate of the substrate under the interface between the substrate and a mask, before the etching mask, which is used when the groove is formed by performing an etching, is applied on the semiconductor substrate. For example, an N-InP buffer layer 2 and a P-InP current preventing layer 3 are epitaxially grown in order on an N-InP substrate 1 having a (001) face. Then, the whole surface of the layer 3 is treated with concentrated hydrogen peroxide, which is used as a treating agent, in such a way as has been indicated by arrow marks.
摘要翻译：目的：为了获得VSB激光器的优异特性，以及通过其中半导体衬底的表面用可处理的处理剂处理的方法来提高V形槽的再现性和激光器的制造成品率在半导体衬底上施加在V形槽的形成时刻使用的蚀刻掩模之前衬底与衬底之间的界面处的衬底的蚀刻速率。构成：在VSB激光器的制造时间，其包括嵌入条形槽中的活性层，半导体衬底的表面用处理剂处理，处理剂可以控制衬底在界面下的蚀刻速率在基板和掩模之间，在通过进行蚀刻形成凹槽时使用的蚀刻掩模之前，施加在半导体基板上。例如，在具有（001）面的N-InP基板1上依次外延生长N-InP缓冲层2和P-InP电流防止层3。然后，以箭头所示的方式用浓缩的过氧化氢处理层3的整个表面，该过氧化氢用作处理剂。

4. 发明专利

JPS59112672A Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：JPS59112672A
公开(公告)日：1984-06-29
申请号：JP22315482
申请日：1982-12-20
申请人： Fujitsu Ltd
发明人： ISHIKAWA HIROSHI , MARUYAMA YOSHIO
IPC分类号： H01S5/00 , H01S5/323
CPC分类号： H01S5/3235 , H01S5/32391
摘要： PURPOSE:To obtain a semiconductor laser which has small temperature dependency of a threshold oscillating current by providing the same conductive type semiconductor layer having a band gap larger than that of the first conductive type active layer at both sides of the first conductive type layer, and further forming the first and second conductive type clad layers having large band gap. CONSTITUTION:The first P type InGaAsP layer 22 having a band gap of 1.05mum of wavelength is grown on an N type InP substrate and clad layer 21, and a P type InGaAsP active layer 23 having a band gap of 2.3mum of wavelength is formed thereon. Then, a P type InGaAsP layer 24 having a band gap of 1.05mum of wavelength is grown thereon, and a P type InP clad layer 25 is formed thereon. The band gaps of the layer 25 and the layer 21 of the clad layer are selected to be larger than those of the layers 22, 24. Thereafter, an electrode 27 is covered through a P type InGaAsP gap layer 26 on the layer 25, and an electrode 28 is covered on the back surface of the layer 21.
摘要翻译：目的：通过提供具有比第一导电类型层两侧的第一导电型有源层的带隙大的带隙的相同的导电型半导体层，获得阈值振荡电流的温度依赖性小的半导体激光器，以及进一步形成具有大带隙的第一和第二导电型覆盖层。构成：在N型InP衬底和包层21上生长具有1.05μm波长带隙的第一P型InGaAsP层22，形成具有波长为2.3μm带隙的P型InGaAsP有源层23 在其上。然后，生长出具有1.05μm波长带隙的P型InGaAsP层24，并在其上形成P型InP覆盖层25。层25和层21的带隙被选择为大于层22,24的层间隙。此后，电极27通过层25上的P型InGaAsP间隙层26覆盖，并且电极28被覆盖在层21的背面上。

5. 发明专利

JP3559680B2 Ring-cavity surface-emitting semiconductor laser and its manufacturing method 失效
公开(公告)号：JP3559680B2
公开(公告)日：2004-09-02
申请号：JP12292997
申请日：1997-04-25
申请人：キヤノン株式会社
发明人：幸生古川
IPC分类号： H01S5/00 , H01S5/10 , H01S5/18 , H01S5/183 , H01S5/323
CPC分类号： H01S5/18352 , H01S5/0207 , H01S5/02476 , H01S5/1071 , H01S5/18305 , H01S5/18316 , H01S5/3202 , H01S5/32391 , H01S2301/176

6. 发明专利

JP2003008147A Semiconductor laser device and its manufacturing method 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：JP2003008147A
公开(公告)日：2003-01-10
申请号：JP2001192439
申请日：2001-06-26
申请人： Sharp Corp , シャープ株式会社
发明人： HOSOBANE HIROYUKI , SUGA YASUO
IPC分类号： H01S5/323 , H01S5/042 , H01S5/223 , H01S5/227 , H01S5/32
CPC分类号： H01S5/0421 , H01S5/2231 , H01S5/2275 , H01S5/321 , H01S5/32391
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device which has a laser device structure where an intermediate gap layer is interposed so as to decrease a band discontinuity at an interface between a contact layer and a clad layer, is capable of ensuring a desired impurity concentration, and has a low operating voltage even if it is has a heat hysteresis.
SOLUTION: A semiconductor laser device is equipped with a light emitting laminate where an active layer is sandwiched between a first conductivity-type clad layer and a second conductivity-type clad layer, a second conductivity contact layer formed on the second conductivity clad layer, and a second conductivity intermediate band gap layer interposed between the second conductivity- type clad layer and the contact layer. The contact layer is composed of, at least, three layers which are different from each other in impurity concentration.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了提供一种半导体激光器件，其具有中间间隙层插入的激光器件结构，以便降低接触层和覆盖层之间的界面处的带状不连续性，能够确保所需的杂质浓度，即使具有热滞后也具有低的工作电压。解决方案：半导体激光装置配备有发光层叠体，其中有源层夹在第一导电型覆盖层和第二导电型覆盖层之间，形成在第二导电覆盖层上的第二导电接触层，以及介于第二导电型覆盖层和接触层之间的第二导电性中间带隙层。接触层由杂质浓度彼此不同的至少三层构成。

7. 发明专利

JPS6189692A Integrated formation of dfb laser 失效
标题翻译： DFB激光的集成形成
公开(公告)号：JPS6189692A
公开(公告)日：1986-05-07
申请号：JP21778685
申请日：1985-09-30
申请人： Siemens Ag
发明人： MARUKUSUKURISUCHIAN AMAN , HANSU EFU MAARAIN , BERUNHARUTO SHIYUTEEKUMIYURAA , UORUFUGANGU CHIYURUKE , GERUHARUTO UINTSUAA , URURITSUHI UORUFU
IPC分类号： H01S5/00 , H01S5/026 , H01S5/10 , H01S5/12 , H01S5/223 , H01S5/323 , H01S3/18
CPC分类号： H01S5/12 , H01S5/026 , H01S5/1032 , H01S5/2231 , H01S5/32391

8. 发明专利

JPS59208887A Semiconductor light emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：JPS59208887A
公开(公告)日：1984-11-27
申请号：JP8354283
申请日：1983-05-13
申请人： Nec Corp
发明人： KATOU YOSHITAKE
IPC分类号： H01L33/30 , H01S5/00 , H01S5/30 , H01S5/323
CPC分类号： H01S5/305 , H01S5/32391
摘要： PURPOSE:To improve the luminous efficiency of an active layer by a method wherein the titled element is equipped with a hetero junction structure that the active layer consisting of a semiconductor layer of a small band gap energy is sandwiched by the first and second clad layers composed of an N type and a P type semiconductor layer and wherein the impurity concentration is more increased as the region goes more distant from the hetero interface between at least one of the clad layers and the active layer. CONSTITUTION:Using S doped InP in the N type clad layer 12, InGaAsP emitting light at the wavelength of 1.3mum as the active layer 13, and Zn doped InP in the P type clad layer 14, the impurity concentration of said layer 12 is set at 2.8X10 cm , that of said layer 14 at 3.2X10 cm in the hetero interface 16 between the active layer 13 and said clad layer 14, while said layer 14 is grown so that the impurity reaches 3X10 cm during increase in the direction of layer thickness, impurity modulated doping is performed by making the impurity amount varied. With this sample, the luminous efficiency is largely improved at 1.5 times conventional in the luminous intensity of photo luminescence and about 1.4 times in the luminous amount.
摘要翻译：目的：为了提高活性层的发光效率，其中标题元素配备有异质结结构，由具有小带隙能的半导体层构成的有源层被第一和第二覆盖层夹在中间的N型和P型半导体层，并且其中随着区域越过包层和活性层中的至少一个之间的异质界面越来越多，杂质浓度增加。构成：在N型覆层12中使用S掺杂的InP，将发光波长为1.3μm的InGaAsP作为有源层13，在P型覆盖层14中发射Zn掺杂的InP，设定所述层12的杂质浓度在2.8×10 18 cm -3处，在有源层13和所述覆盖层14之间的异质界面16中，所述层14在3.2×10 17 cm -3处，而所述层14生长使得在层厚度方向增加期间杂质达到3×10 18 cm -3，通过使杂质量变化来进行杂质调制掺杂。对于该样品，发光效率在光致发光的发光强度中为常规的1.5倍，发光量大约为1.4倍。

9. 发明专利

JPS59154088A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：JPS59154088A
公开(公告)日：1984-09-03
申请号：JP2799983
申请日：1983-02-22
申请人： Nec Corp
发明人： ODAGIRI YUUICHI , NISHIMOTO HIROYUKI
IPC分类号： H01S5/00 , H01S5/223 , H01S5/323
CPC分类号： H01S5/2234 , H01S5/32391
摘要： PURPOSE:To make a photo signal from outside easy to couple and prevent the unstable photo outut due to a reflected light by a method wherein at least a part of an active layer is formed widely and thickly in width, and an electrode above a mesa stripe at this part is removed. CONSTITUTION:The first shallow groove 102 of recess form is formed in the direction of of the plane 001 of a substrate 101, and next an N-InP clad layer 103, the active layer 104, a P-InP clad layer 105 are successively grown, thus thickening the active layer 104 by said groove 102. Etching is so performed in the direction of that the width of the active layer 104 at a part 201 intersecting with said groove 102 become smaller than that of a part 202 not intersecting. Successively, the second crystal growth is performed, and a P-side electrode 203 is vapor-deposited on the surface of a cap layer 112. Thereafter an photo injection window 204 is provided so that photo injection can be performed from the side of said electrode 203 to the active layer 104 of the part 201 intersecting with said groove 102. Thereby, the variation of photo output never generates, and the photo input from outside is efficiently absorbed to the active layer 104.
摘要翻译：目的：为了使来自外部的光信号易于耦合，并且通过其中活性层的至少一部分形成为广泛且厚度较宽的方法由于反射光而防止不稳定的照片异常，并且在台面条上方具有电极在这部分被删除。构成：凹部形状的第一浅槽102沿基板101的面001的<110>方向形成，接着形成N-InP覆盖层103，有源层104，P-InP覆盖层105 依次生长，从而通过所述凹槽102使活性层104变厚。蚀刻沿<-110°的方向进行，在与所述凹槽102相交的部分201处的有源层104的宽度变得小于第202部分不相交。接着，进行第二晶体生长，并且在盖层112的表面上气相沉积P侧电极203.之后，提供光注入窗口204，使得可以从所述电极侧进行光注入 203到与沟槽102相交的部分201的有源层104.从而，不会产生光输出的变化，并且从外部输入的光被有效地吸收到有源层104。

10. 发明专利

JPS58180078A Optical semiconductor device 失效
标题翻译：光学半导体器件
公开(公告)号：JPS58180078A
公开(公告)日：1983-10-21
申请号：JP6318082
申请日：1982-04-15
申请人： Fujitsu Ltd
发明人： KUWABARA HIDEO , SASAKI MASARU , ONODA YOSHITO , GOTOU MASAMI
IPC分类号： H01L33/14 , H01L33/30 , H01S5/00 , H01S5/22 , H01S5/323
CPC分类号： H01S5/3235 , H01S5/22 , H01S5/32391
摘要： PURPOSE:The beam of light incided on a substrate is absorbed before it reaches an active layer by a method wherein a light-absorbing layer is provided on the semiconductor substrate which transmits luminescence wavelength and a light absorbing layer is provided in-between the substrate and the active layer. CONSTITUTION:When a current is injected from a P type InP layer 4, the recoupling of carrier is performed and light is emitted on an InGaAsP layer 3 by the carrier confinement effect. On the other hand, the fedback light made incident from the substrate side excites an electron of valence band into a conductive band in an N type InGaAsP layer 10 and absorbed there, and does not reach the InGaAsP layer. Accordingly, there exists almost no leakage of hole on the side of an n-InP layer 9, and the electron alone exists as a carrier. On the InGaAsP layer 10 which is linked with said carrier, no recoupling of carrier is performed, and the absorption of feedback light only is conducted. As the feedback light passed through the substrate is absorbed by a light absorption layer, the interaction to be generated between each of photons on the active layer can be blocked.
摘要翻译：目的：通过在半导体衬底上设置光吸收层并传递发光波长的方法，在其到达有源层之前，将衬底上的光束吸收，并且将光吸收层设置在衬底和活动层。构成：当从P型InP层4注入电流时，执行载流子的重新接合，并通过载流子限制效应在InGaAsP层3上发光。另一方面，从衬底侧入射的反馈光在N型InGaAsP层10中激发价带的电子为导电带，并在那里吸收，并且不会到达InGaAsP层。因此，在n-InP层9的侧面上几乎没有孔的泄漏，并且电子单独作为载体存在。在与所述载体连接的InGaAsP层10上，不进行载流子的重新接合，仅进行反馈光的吸收。当通过衬底的反馈光被光吸收层吸收时，可以阻止在有源层上的每个光子之间产生的相互作用。

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