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1. 发明专利

JP2006339477A Semiconductor optical element and module using same 审中-公开
标题翻译：半导体光学元件和使用相同的模块
公开(公告)号：JP2006339477A
公开(公告)日：2006-12-14
申请号：JP2005163576
申请日：2005-06-03
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： AOKI MASAHIRO , NOMOTO ETSUKO
IPC分类号： H01S5/22
CPC分类号： H01S5/34326 , B82Y20/00 , H01S5/02212 , H01S5/1014 , H01S5/1039 , H01S5/12 , H01S5/1237 , H01S5/162 , H01S5/22 , H01S5/3436 , H01S5/4031 , H01S5/4087
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device which can simultaneously achieve output improvement and kink suppression and can perform high-output operation with a structure achieving these properties within a short chip length.
SOLUTION: In a waveguide configuration of a multi-mode interference laser, a tapered waveguide is intensively inserted between a single-mode waveguide and a multi-mode waveguide. Furthermore, in a waveguide configuration of the multi-mode interference laser, the single-mode waveguide is defined as a passive waveguide. Each of these means and combination thereof solve the problem.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够同时实现输出改善和扭结抑制的半导体激光装置，并且可以在短的芯片长度内实现这些特性的结构来执行高输出操作。解决方案：在多模干涉激光器的波导配置中，将锥形波导集中插入在单模波导和多模波导之间。此外，在多模干涉激光器的波导配置中，单模波导被定义为无源波导。这些方法和组合中的每一个解决了问题。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2004119459A Optical module and semiconductor optical device 审中-公开
公开(公告)号：JP2004119459A
公开(公告)日：2004-04-15
申请号：JP2002277323
申请日：2002-09-24
申请人： Hitachi Ltd , Opnext Japan Inc , 日本オプネクスト株式会社 , 株式会社日立製作所
发明人： NAKATSUKA SHINICHI , AOKI MASAHIRO
IPC分类号： G02F1/017 , G02F1/295 , H01S5/026 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To increase an extinction ratio of a light modulation intensity by adding a function of modulating an emitting position or direction of a light to an optical waveguide having a function of modulating the intensity of a guided light signal. SOLUTION: A semiconductor optical device includes at least a laser oscillator and a light modulator in such a manner that a core of the optical waveguide of the modulator is controllable, so that its complex refractive index becomes asymmetrical in a plane perpendicular to an optical axial direction. An optical module includes the semiconductor optical device. Thus, since a light propagating in the waveguide is modulated at its emitting position in addition to an intensity modulation, the extinction ratio of the light modulation intensity can be increased by providing a photodetecting opening at a position for photodetecting much specifically deflected light. COPYRIGHT: (C)2004,JPO

3. 发明专利

JP2010003883A Semiconductor laser device, optical module, and optical transceiver 审中-公开
标题翻译：半导体激光器件，光学模块和光学收发器
公开(公告)号：JP2010003883A
公开(公告)日：2010-01-07
申请号：JP2008161469
申请日：2008-06-20
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： SHINODA KAZUNORI , NAKATSUKA SHINICHI , SHIMIZU JUNICHIRO , AOKI MASAHIRO
IPC分类号： H01S5/125 , H01S5/022 , H01S5/026 , H01S5/223 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a horizontal-cavity surface emitting laser which emits laser light in a direction exactly perpendicular to a semiconductor substrate.
SOLUTION: By forming a surface emitting type horizontal-cavity surface emitting laser on a semiconductor substrate tilted at 9.7° in a [01 bar 1] direction from a (100) plane, an angle that a mirror forms with the surface of the substrate is made exactly 45°. Moreover, by forming a backside emitting type horizontal-cavity surface emitting laser on the semiconductor substrate tilted at 9.7° in a [011] direction from the (100) plane, an angle that a mirror forms with the surface of the substrate is made exactly 135°.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在与半导体基板正交的方向上发射激光的水平腔表面发射激光器。解决方案：通过在从（100）平面沿[01 bar 1]方向在9.7°倾斜的半导体衬底上形成表面发射型水平腔表面发射激光，使得反射镜与将基板精确设置为45°。此外，通过在从（100）面沿[011]方向倾斜9.7°的半导体衬底上形成背面发射型水平腔表面发射激光器，精确地确定反射镜与衬底表面形成的角度 135°。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2009130030A Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：JP2009130030A
公开(公告)日：2009-06-11
申请号：JP2007301662
申请日：2007-11-21
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： KITATANI TAKESHI , SHINODA KAZUNORI , ADACHI KOICHIRO , AOKI MASAHIRO
IPC分类号： H01S5/16
CPC分类号： H01S5/125 , H01S5/0207 , H01S5/026 , H01S5/0267 , H01S5/1039 , H01S5/1085 , H01S5/12 , H01S5/168 , H01S5/18 , H01S5/22
摘要： PROBLEM TO BE SOLVED: To solve the problem that operating current increases by current leak in a window part in a ridge structure-type end surface light emitting laser having a window region, especially in a short resonator-type laser with small operating current.
SOLUTION: In the window region, a semi-insulating semiconductor layer to which Ru is doped is inserted between an n-type substrate and a p-type cladding layer, or a laminated structure of the layer to which Ru is doped and a Fe doped layer is introduced.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：为了解决具有窗口区域的脊结构型端面发光激光器中的窗口部分中的电流泄漏增加的问题，特别是在具有小的操作的短谐振器型激光器中当前。解决方案：在窗口区域中，将掺杂有Ru的半绝缘半导体层插入在n型衬底和p型覆层之间，或者将Ru掺杂的层的层压结构和引入Fe掺杂层。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2008053501A Integrated optical device, and its manufacturing method 审中-公开
标题翻译：集成光学器件及其制造方法
公开(公告)号：JP2008053501A
公开(公告)日：2008-03-06
申请号：JP2006228847
申请日：2006-08-25
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： SHINODA KAZUNORI , SHIODA TAKASHI , TSUCHIYA TOMONOBU , KITATANI TAKESHI , AOKI MASAHIRO
IPC分类号： H01S5/026
CPC分类号： G02B6/12004 , B82Y20/00 , G02F1/01708 , G02F2001/0157 , H01S5/0265
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of an integrated optical device that allows to directly connect two waveguides with each other while preventing InP from being caught at the connection due to a mass transport phenomenon, when a waveguide-type optical element composed of an InGaAlAs-based material as a main constituent element is butt-joint-integrated on an InP substrate; and also, to provide a high-performance integrated optical device that has almost no light loss or light reflection in an optical waveguide.
SOLUTION: In a manufacturing process for butt-joint-integrating the InGaAlAs-based waveguide on the InP substrate, an InGaAsP layer is formed on InP which becomes a substrate for growing the InGaAlAs-based waveguide, when a temperature is raised to the vicinity of 700°C being a growth temperature of InGaAlAs.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种集成光学器件的制造方法，其允许在两个波导彼此之间直接连接，同时防止InP由于质量传输现象而被卡在连接处，当波导型光学由InGaAlAs系材料作为主要构成要素构成的元件在InP基板上对接成一体，并且还提供在光波导中几乎没有光损失或光反射的高性能集成光学器件。解决方案：在InP衬底上对准基于InGaAlAs的波导对接在一体的制造工艺中，在InP上形成InGaAsP层，InP是成为用于生长InGaAlAs的波导的衬底，当温度升至 700℃附近是InGaAlAs的生长温度。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2007227504A Semiconductor light emitting device and integrated semiconductor optical waveguide element 有权
标题翻译：半导体发光器件和集成半导体光波导元件
公开(公告)号：JP2007227504A
公开(公告)日：2007-09-06
申请号：JP2006044887
申请日：2006-02-22
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： FUKAMACHI TOSHIHIKO , MAKINO SHIGEKI , TANIGUCHI TAKAFUMI , AOKI MASAHIRO
IPC分类号： H01S5/223 , H01S5/026 , H01S5/12
CPC分类号： H01S5/0265 , B82Y20/00 , H01S5/1014 , H01S5/12 , H01S5/2004 , H01S5/22 , H01S5/2213 , H01S5/2214 , H01S5/2216 , H01S5/3211 , H01S5/3406 , H01S5/3434 , H01S2301/173
摘要： PROBLEM TO BE SOLVED: To achieve high output of a semiconductor light emitting device, and to perform integration with low cost without degrading low power consumption and respective characteristics of an integrated semiconductor optical waveguide element where a high output semiconductor light emitting device is integrated with an electro-absorption optical modulator.
SOLUTION: In the semiconductor light emitting device having a ridge 12, ridge width can be enlarged while keeping single transverse mode by setting a low refractive index difference between the ridge 12 and other component, diffusion current is prevented and increase in refractive index difference is prevented by forming substantially vertical trenches along the opposite sides of the ridge, degradation in characteristics due to regrowth is prevented by forming a grating in the ridge, the number of times of growing is not increased when they are integrated with an optical element such as the electro-absorption optical modulator, and the light emitting device is integrated with an optical element such as the electro-absorption optical modulator with no limitation on the ridge width by employing a tapered waveguide.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题为了实现半导体发光器件的高输出，并且以低成本进行集成而不降低低功耗的集成半导体光波导元件的特性，其中高输出半导体发光器件为与电吸收光调制器集成。解决方案：在具有脊12的半导体发光器件中，通过设置脊12与其它部件之间的低折射率差，可以在保持单横模的同时扩大脊宽度，防止扩散电流并增加折射率通过沿着脊的相对侧形成基本上垂直的沟槽来防止差异，通过在脊中形成光栅来防止由于再生长导致的特性的劣化，当它们与光学元件集成在一起时，生长次数不增加作为电吸收光调制器，并且通过采用锥形波导，发光器件与诸如电吸收光学调制器的光学元件集成在一起而不限制脊宽度。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2006303147A Optical semiconductor element 有权
标题翻译：光学半导体元件
公开(公告)号：JP2006303147A
公开(公告)日：2006-11-02
申请号：JP2005122016
申请日：2005-04-20
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： KITATANI TAKESHI , AOKI MASAHIRO , TSUCHIYA TOMONOBU
IPC分类号： H01S5/343 , G02F1/017
CPC分类号： H01S5/34313 , B82Y20/00 , H01S5/2009 , H01S5/3213 , H01S5/3216 , H01S5/34306 , H01S5/34366 , H01S2304/04
摘要： PROBLEM TO BE SOLVED: To solve the problem that a semiconductor element containing a laminate structure of group III-V compound semiconductor layers different in group V constituent atoms forms the so-called type II band line-up, so that band discontinuity in its hetero structure blocks satisfactory conduction of carriers to cause deterioration of element characteristics. SOLUTION: In order to improve conduction characteristics of the carrier at hetero interface where the type II band line-up is formed, it is possible to realize an energy band structure where the carriers (e.g., holes) can be made excellently conductive by connecting discontinuous energies in an inclined manner or in stages in one energy band (e.g., valence band) and in contrast in other energy band (e.g., conduction band) energy discontinuity can be kept to keep barrier effect to the other carriers (e.g., electrons). COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题为了解决包含V组成原子不同的III-V族化合物半导体层的层压结构的半导体元件形成所谓的II型带阵列的问题，使得带不连续在其异质结构中阻碍了载流子的令人满意的导电以引起元件特性的劣化。解决方案：为了改善在形成II型带阵列的异质界面处的载流子的导电特性，可以实现能带结构，其中可以使载流子（例如，孔）导电通过在一个能带（例如，价带）中以倾斜的方式或分级地连接不连续能量，并且与其他能带（例如，导带）相反，可以保持能量不连续性以对其它载体保持屏障效应（例如，电子）。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2010239151A Integrated optical waveguide element 审中-公开
标题翻译：集成光学波长元件
公开(公告)号：JP2010239151A
公开(公告)日：2010-10-21
申请号：JP2010142603
申请日：2010-06-23
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： FUKAMACHI TOSHIHIKO , MAKINO SHIGEKI , TANIGUCHI TAKAFUMI , AOKI MASAHIRO
IPC分类号： H01S5/026 , G02F1/017 , G02F1/025
摘要： PROBLEM TO BE SOLVED: To solve the problem that it is difficult to achieve reduction of cost and power consumption without degrading original performance using a conventional semiconductor light emitting device due to its low light output at a constant actuating current and due to restriction in ridge width when it is integrated with an optical element such as a Mach-Zehnder optical modulator.
SOLUTION: In the semiconductor light emitting device having a ridge, ridge width is widened while keeping single transverse mode by setting a low refractive index difference between the ridge and other components. In this device, generation of diffusion current and increase in refractive index difference are prevented by forming substantially vertical grooves along both sides of the ridge, and degradation of performance due to regrowth is prevented by forming a diffraction grating on the ridge. When it is integrated with an optical element such as a Mach-Zehnder optical modulator, the semiconductor light emitting device is integrated with the optical element by using a tapered waveguide without increasing the number of growth cycles with no restriction of the ridge with.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：为了解决难以实现成本和功耗的降低而不会由于在恒定的驱动电流下的低光输出而由于常规的半导体发光器件而降低原始性能以及由于限制而导致的原始性能的降低当它与诸如Mach-Zehnder光学调制器的光学元件集成时的脊宽度。解决方案：在具有脊的半导体发光器件中，通过设置脊与其它部件之间的低折射率差，在保持单横模的同时加宽脊宽度。在该装置中，通过在脊的两侧形成基本上垂直的沟槽来防止扩散电流的产生和折射率差的增加，并且通过在脊上形成衍射光栅来防止再生长导致的性能的劣化。当与诸如Mach-Zehnder光学调制器的光学元件集成时，通过使用锥形波导将半导体发光器件与光学元件集成在一起，而不增加具有脊的限制的生长周期数。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2005353910A Optical integrated device driven by single power supply 有权
标题翻译：由单电源驱动的光学集成设备
公开(公告)号：JP2005353910A
公开(公告)日：2005-12-22
申请号：JP2004174368
申请日：2004-06-11
申请人： Hitachi Ltd , Opnext Japan Inc , 日本オプネクスト株式会社 , 株式会社日立製作所
发明人： SHIMIZU JUNICHIRO , MAKINO SHIGEKI , AOKI MASAHIRO
IPC分类号： H01S5/042 , G02B6/132 , H01L31/00 , H01S5/02 , H01S5/026 , H01S5/12 , H01S5/20 , H01S5/22 , H01S5/227
CPC分类号： H01S5/227 , G02B6/132 , H01S5/0208 , H01S5/02284 , H01S5/026 , H01S5/0265 , H01S5/0421 , H01S5/0425 , H01S5/12 , H01S5/2081 , H01S5/2205
摘要： PROBLEM TO BE SOLVED: To provide optical integrated devices capable of driving them by a single power supply, by realizing a structure, wherein the electrical separation generated between the anodes of the optical integrated devices and the electrical separation generated reasonably between the cathodes of the optical integrated devices are made possible by conventional process techniques.
SOLUTION: The optical integrated devices are formed on a semi-insulating or insulating substrate. The anodes of the respective optical integrated devices are electrically separated from each other. Similarly, the cathodes of the respective optical integrated devices are electrically separated from each other, by providing in optical waveguides which are separating regions installed between the respective optical integrated devices high-resistance regions at least extended from active regions to the substrate.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供能够通过单个电源驱动它们的光学集成器件，通过实现一种结构，其中在光学集成器件的阳极之间产生的电分离和阴极之间合理产生的电分离的光学集成器件通过常规的工艺技术成为可能。解决方案：光学集成器件形成在半绝缘或绝缘衬底上。各个光学集成器件的阳极彼此电分离。类似地，通过在光波导中提供各个光学集成器件的阴极，这些光波导是安装在至少从有源区延伸到衬底的各个光学集成器件高电阻区域之间的分离区域。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2008153297A Semiconductor laser element and optical module using it 有权
标题翻译：半导体激光器元件和使用它的光学模块
公开(公告)号：JP2008153297A
公开(公告)日：2008-07-03
申请号：JP2006337384
申请日：2006-12-14
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： AOKI MASAHIRO
IPC分类号： H01S5/12 , H01S5/022 , H01S5/18 , H01S5/343
CPC分类号： H01S5/026 , H01S5/02284 , H01S5/02288 , H01S5/0267 , H01S5/0653 , H01S5/0654 , H01S5/1085 , H01S5/12 , H01S5/18 , H01S5/22
摘要： PROBLEM TO BE SOLVED: To realize a laser beam source realizing a chip optical output having several mW and a low-current operation as a key for a power-saving operation at a low cost, particularly the laser beam source having a 1.3 μm wavelength band desirable for a short-distance application having an optical-fiber transmission distance ranging from approximately several to several dozen km while realizing an optical-communication module reducing a consumption power based on a mounting technique preferable to these lasers.
SOLUTION: A light reflection resistance is improved while maintaining a low operation-current operation and a high-speed property of the laser, and a short resonator laser operating in a plurality of longitudinal modes is obtained as a laser structure eliminating the need of an optical isolator. An oblique mirror structure changing the outgoing direction of the optical output to the top face of the substrate or the underside of the substrate is introduced at the emission end section of the laser for particularly realizing the profitability of a face light-emitting laser simultaneously.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了实现具有几个mW和低电流操作的芯片光输出的激光束源作为低成本的省电操作的关键，特别是具有1.3的激光束源在实现光通信模块基于优选于这些激光器的安装技术降低功耗的同时，对于具有大约几个到几十公里的光纤传输距离的短距离应用，期望的μm波长带。解决方案：在保持激光器的低工作电流操作和高速性能的同时提高光反射电阻，并且获得以多个纵向模式工作的短谐振器激光器作为消除需要的激光器结构的光隔离器。在激光器的发射端部处引入将光输出的出射方向改变到衬底的顶面或衬底的下表面的倾斜镜结构，以特别实现面部发光激光器的获利性。版权所有（C）2008，JPO＆INPIT

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