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1. 发明专利

JP2017126637A 窒化物半導体素子およびそれを用いた量子カスケードレーザ审中-公开
公开(公告)号：JP2017126637A
公开(公告)日：2017-07-20
申请号：JP2016004333
申请日：2016-01-13
申请人：シャープ株式会社 , 国立大学法人東京大学
发明人：小谷晃央 , 荒川泰彦
IPC分类号： H01S5/343
CPC分类号： H01S5/3401 , H01L33/16 , H01L33/32 , H01S5/3201 , H01S5/3202 , H01S5/3215 , H01S5/3218 , H01S5/3422 , H01S5/34333 , H01S2301/173 , H01S2302/02 , H01S5/0421 , H01S5/305 , H01S5/3407
摘要：【課題】m面GaN基板上に成長させたAlGaN層のクラックを抑制することが可能な窒化物半導体素子を提供する。【解決手段】主表面とGaNのm面との成す角度が−5度以上であり、かつ+5度以下であるGaNにより成る基板と、前記基板の前記主表面上に設けられたAl z Ga (1−z) N(0≦z≦1)より成る第1中間層と、前記第1中間層の主表面上に設けられ、前記第1中間層とは異なるAl組成を有するAl x1 In y1 Ga (1-x1-y1) (0≦x1≦1、0≦y1≦1)より成る第2中間層とを含む窒化物半導体素子、およびそれを用いた量子カスケードレーザ。【選択図】図1

2. 发明专利

JPS59165484A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：JPS59165484A
公开(公告)日：1984-09-18
申请号：JP3986783
申请日：1983-03-10
申请人： Nec Corp
发明人： ONABE KENTAROU
IPC分类号： H01S5/00 , H01S5/32 , H01S5/323
CPC分类号： H01S5/3235 , H01S5/3211 , H01S5/3215 , H01S5/3218 , H01S5/32391
摘要： PURPOSE:To enable a low temperature growth and to facilitate the control of a composition by respectively composing a substrate, the first clad layer, an active layer, and the second clad layer of InP, In1-XGaXP, In1-ZGaZAs and In1-X'GaX'P, and varying the composition ratio (x) of the first clad layer to substantially match the grating constants. CONSTITUTION:An n type or p type active layer 8 is formed of a 3-element mixed crystal In0.38Ga0.62As represented at a point B. The point B is equal in its band gap energy to the composition of a point A, but grating constant alphao is different, and alphao=5.80Angstrom . The point B does not belong to a mixed unstable region even at low temperature such as 500 deg.C. A 3-element mixed In0.84Ga0.16P represented at a point C having the same grating constant as the point B is used as a P type clad layer 9 grown next to the layer 8. A layer continuously varied in composition between InP and In0.84Ga0.16P (the point C) is used as the n type clad layer 7 adjacent to an InP substrate 1, and the gratings are substantially matched between the boundary to the substrate 1 and the boundary to the layer 8. The formation of such composition varying layer can be readily performed by a vapor phase growth method.
摘要翻译：目的：为了实现低温生长并且通过分别构成基底来促进组合物的控制，第一包层，有源层和InP，In1-XGaXP，In1-ZGaZAs和In1-X的第二包层 GaX'P，并且改变第一包层的组成比（x）以基本上匹配光栅常数。构成：n点或p型有源层8由点B表示的3元素混晶In0.38Ga0.62A形成。点B的带隙能量与点A的组成相等，但是光栅常数αo不同，αo= 5.80Ang。即使在500℃的低温下，B点也不属于混合不稳定区域。在具有与点B相同的光栅常数的点C处表示的3元素混合In0.84Ga0.16P用作在层8附近生长的P型覆盖层9.在InP和In0之间的组成上连续变化的层 0.84Ga0.16P（点C）用作与InP衬底1相邻的n型覆盖层7，并且光栅在与衬底1的边界和与层8的边界之间基本匹配。形成这样的组成变化层可以容易地通过气相生长法进行。

3. 发明专利

JP2008078340A Semiconductor laser element and manufacturing method therefor 审中-公开
标题翻译：半导体激光器元件及其制造方法
公开(公告)号：JP2008078340A
公开(公告)日：2008-04-03
申请号：JP2006255167
申请日：2006-09-21
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： NAKAMURA ATSUSHI
IPC分类号： H01S5/343
CPC分类号： H01S5/34326 , B82Y20/00 , H01S5/0224 , H01S5/22 , H01S5/3201 , H01S5/3218
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser element with improved temperature characteristics, and to provide its manufacturing method.
SOLUTION: The semiconductor laser element comprises an MQW structure active layer, a p-type second clad layer, a p-type first clad layer sequentially deposited on an n-type clad layer provided on an n-type GaAs substrate. The n-type clad layer and the p-type first clad layer are structured in lattices matching the GaAs substrate, a negative-strain layer is provided in an intermediate layer of the first clad layer, and a positive-strain layer is provided on both the sides, or on one side of the negative-strain layer.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供具有改善的温度特性的半导体激光元件，并提供其制造方法。解决方案：半导体激光元件包括顺序地沉积在设置在n型GaAs衬底上的n型覆盖层上的MQW结构有源层，p型第二覆盖层，p型第一包层。 n型覆盖层和p型第一覆盖层以与GaAs衬底相匹配的晶格构成，在第一覆盖层的中间层设置负应变层，并且在两者上设置正应变层侧面或负应变层的一侧。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2008034851A Semiconductor layer structure having superlattice 审中-公开
标题翻译：具有超导性的半导体层结构
公开(公告)号：JP2008034851A
公开(公告)日：2008-02-14
申请号：JP2007195432
申请日：2007-07-27
申请人： Osram Opto Semiconductors Gmbh , オスラムオプトセミコンダクターズゲゼルシャフトミットベシュレンクテルハフツングOsram Opto Semiconductors GmbH
发明人： EICHLER CHRISTOPH , LELL ALFRED , MILER ANDREAS , SCHILLGALIES MARK
IPC分类号： H01L33/04 , H01L33/06 , H01L33/32 , H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2924/0002 , H01S5/0422 , H01S5/2009 , H01S5/3063 , H01S5/3213 , H01S5/3215 , H01S5/3216 , H01S5/3218 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor layer structure in which the electrical characteristics and the optical characteristics are improved, and to provide an optoelectronics device having such a semiconductor layer structure. SOLUTION: In the semiconductor layer structure, adjoining layers of different type in a superlattice have a different composition of at least one element, at least two layers of the same type in the superlattice have a different content of at least one element, the content of at least one element is gradient in the layer of the superlattice which contains a doping material at a predetermined concentration, and the superlattice has a layer doped by a different doping material. An optoelectronics device having such a semiconductor layer structure is also provided. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种提高电特性和光学特性的半导体层结构，并提供具有这种半导体层结构的光电子器件。解决方案：在半导体层结构中，超晶格中不同类型的相邻层具有至少一种元素的不同组成，超晶格中相同类型的至少两层具有至少一种元素的不同含量，至少一种元素的含量是超晶格层中含有预定浓度的掺杂材料的梯度，超晶格具有由不同掺杂材料掺杂的层。还提供了具有这种半导体层结构的光电子器件。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP5355599B2 Semiconductor light-emitting device and a method of manufacturing the same 有权
公开(公告)号：JP5355599B2
公开(公告)日：2013-11-27
申请号：JP2011009047
申请日：2011-01-19
申请人：株式会社東芝
发明人：茂行高木 , 秀彦薮原
IPC分类号： H01S5/343 , H01S5/227
CPC分类号： H01S5/34313 , B82Y20/00 , H01S5/2022 , H01S5/22 , H01S5/2206 , H01S5/222 , H01S5/2275 , H01S5/3213 , H01S5/3218 , H01S5/3402
摘要： According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers. The active layer is provided in a stripe shape extending in a direction parallel to an emission direction of the light, and includes the plurality of quantum wells; and the active layer emits the light with a wavelength of 10 μm or more. Each of the cladding layers is provided both on and under the active layer respectively and have a lower refractive index than the active layer. At least one portion of the cladding layers contains a material having a different lattice constant from the active layer and has a lower optical absorption at a wavelength of the light than the other portion.

7. 发明专利

JP2012151291A Semiconductor light-emitting device and manufacturing method of the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：JP2012151291A
公开(公告)日：2012-08-09
申请号：JP2011009047
申请日：2011-01-19
申请人： Toshiba Corp , 株式会社東芝
发明人： TAKAGI SHIGEYUKI , YABUHARA HIDEHIKO
IPC分类号： H01S5/343 , H01S5/227
CPC分类号： H01S5/34313 , B82Y20/00 , H01S5/2022 , H01S5/22 , H01S5/2206 , H01S5/222 , H01S5/2275 , H01S5/3213 , H01S5/3218 , H01S5/3402
摘要： PROBLEM TO BE SOLVED: To provide a high output semiconductor light-emitting device which emits light in a far-infrared region of a wavelength of more than 10 μm, and a manufacturing method of the same.SOLUTION: A semiconductor light-emitting device according to the embodiment is a semiconductor light-emitting device emitting emission light by energy relaxation of electrons in an intersubband of a plurality of quantum wells, and comprises: an active layer provided in a striped shape extending in a direction parallel with a radiation direction of the emission light, including the plurality of quantum wells and emitting the emission light of a wavelength of 10 μm and over; and a pair of clad layers provided along a long side of the stripe-shaped active layer and at least above and below the active layer, respectively, and each having a refraction index lower than that of the active layer. At least a part of the clad layers contains a material having a lattice constant different from that of the active layer, and represents light absorption in the wavelength of the emission light relatively lower than that of another part containing a material which is lattice matched with the active layer.
摘要翻译：解决的问题：提供一种在大于10μm的波长的远红外区域发光的高输出半导体发光装置及其制造方法。解决方案：根据实施例的半导体发光器件是通过在多个量子阱的子带内的电子的能量弛豫来发射发射光的半导体发光器件，并且包括：有源层，设置在带状形状在与发射光的辐射方向平行的方向上延伸，包括多个量子阱并发射波长为10μm以上的发射光; 以及沿着条形有源层的长边分别设置在活性层的至少上方和下方并且各自具有比有源层的折射率低的折射率的一对包层。包覆层的至少一部分包含与有源层的晶格常数不同的晶格常数的材料，并且表示发射光的波长中的光吸收比包含与活动层版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP4737745B2 Semiconductor device 有权
公开(公告)号：JP4737745B2
公开(公告)日：2011-08-03
申请号：JP2005060186
申请日：2005-03-04
申请人：国立大学法人東京大学 , 富士通株式会社
发明人：理人植竹 , 広治江部 , 研一河口
IPC分类号： H01S5/343 , B82Y20/00
CPC分类号： H01S5/341 , B82Y10/00 , B82Y20/00 , H01S5/3218 , H01S5/3404 , H01S5/3412 , H01S5/34373

9. 发明专利

JP3985283B2 Light-emitting element 失效
公开(公告)号：JP3985283B2
公开(公告)日：2007-10-03
申请号：JP963897
申请日：1997-01-22
申请人：ソニー株式会社
发明人：孝行河角
IPC分类号： H01S5/323 , H01L33/14 , H01L33/16 , H01L33/30 , H01L33/36 , H01S5/00 , H01S5/30 , H01S5/32
CPC分类号： H01S5/323 , H01S5/305 , H01S5/3072 , H01S5/32 , H01S5/3211 , H01S5/3213 , H01S5/3218

10. 发明专利

JP2006245373A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2006245373A
公开(公告)日：2006-09-14
申请号：JP2005060186
申请日：2005-03-04
申请人： Fujitsu Ltd , Univ Of Tokyo , 国立大学法人東京大学 , 富士通株式会社
发明人： UETAKE MASATO , EBE KOJI , KAWAGUCHI KENICHI
IPC分类号： H01S5/343 , B82Y20/00
CPC分类号： H01S5/341 , B82Y10/00 , B82Y20/00 , H01S5/3218 , H01S5/3404 , H01S5/3412 , H01S5/34373
摘要： PROBLEM TO BE SOLVED: To improve the crystallinity of a quantum dot layer, comprising a quantum dot, in a semiconductor device equipped with quantum dots.
SOLUTION: The semiconductor device is provided with the quantum dot layer 8, having a barrier layer 3 consisting of a semiconductor crystal having a first lattice constant, a plurality of quantum dots 4 consisting of the semiconductor crystal, having a second lattice constant, and side barrier layers 5 formed so as to be contacted with respective side surfaces of the plurality of quantum dots and formed of the semiconductor crystal having a third lattice constant. In this case, the barrier layer, the quantum dots and the side barrier layers are constituted so that the difference between the value of the first lattice constant and the value of the second lattice constant becomes opposite in sign of the difference between the value of the first lattice constant and the value of the third lattice constant.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：在配备有量子点的半导体器件中，提高包括量子点的量子点层的结晶度。解决方案：半导体器件设置有量子点层8，其具有由具有第一晶格常数的半导体晶体构成的阻挡层3，由半导体晶体构成的多个量子点4，具有第二晶格常数，以及形成为与多个量子点的各个侧表面接触并由具有第三晶格常数的半导体晶体形成的侧势垒层5。在这种情况下，阻挡层，量子点和侧面阻挡层被构成为使得第一晶格常数的值与第二晶格常数的值之间的差值变得相反，第一晶格常数和第三晶格常数的值。版权所有（C）2006，JPO＆NCIPI

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