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1. 发明专利

JP2009182296A Light emitting element and integrated element 有权
标题翻译：发光元件和集成元件
公开(公告)号：JP2009182296A
公开(公告)日：2009-08-13
申请号：JP2008022567
申请日：2008-02-01
申请人： Fujitsu Ltd , Univ Of Tokyo , 国立大学法人東京大学 , 富士通株式会社
发明人： KAWAGUCHI KENICHI , EBE KOJI , ARAKAWA YASUHIKO
IPC分类号： H01S5/343 , H01S5/026 , H01S5/183
摘要： PROBLEM TO BE SOLVED: To improve light emission efficiency in a light emitting element of a structure where quantum dot comprising direct transition type group III-V compound semiconductor are embedded in a group IV semiconductor embedding layer.
SOLUTION: The light emitting element includes: a substrate 1 containing Si; and an active layer 2 formed on the substrate 1. The active layer 2 includes quantum dot 5 each comprising a direct transition type group III-V compound semiconductor material; an outer shell part 6 for covering the entire surface of the quantum dot 5; and group IV semiconductor embedding layer 3 for embedding the quantum dot 5 covered with the outer shell part 6.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提高将包含直接跃迁型III-V族化合物半导体的量子点嵌入在IV族半导体嵌入层中的结构的发光元件中的发光效率。解决方案：发光元件包括：含有Si的基板1; 以及形成在基板1上的有源层2.有源层2包括每个包括直接跃迁型III-V族化合物半导体材料的量子点5; 用于覆盖量子点5的整个表面的外壳部分6; 以及用于嵌入被外壳部分6覆盖的量子点5的IV族半导体嵌入层3.版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2008294119A Optical semiconductor device and manufacturing process of the same 审中-公开
标题翻译：光学半导体器件及其制造工艺
公开(公告)号：JP2008294119A
公开(公告)日：2008-12-04
申请号：JP2007136324
申请日：2007-05-23
申请人： Fujitsu Ltd , Univ Of Tokyo , 国立大学法人東京大学 , 富士通株式会社
发明人： KAWAGUCHI KENICHI , EBE KOJI , ARAKAWA YASUHIKO
IPC分类号： H01S5/50 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To attain quantum dots improved in non-dependence on polarization as gain medium.
SOLUTION: Polarization characteristic is controlled with a quantum dot 12a formed on a semiconductor substrate 11 to have a lattice constant larger than that of the semiconductor substrate 11 and an average distortion of 0% or more and 1% or less and a barrier layer 13 formed on the quantum dot 12a to have a lattice constant smaller than that of the semiconductor substrate 11, a mismatching value of lattice for the semiconductor substrate 11 that is larger than that of the quantum dot 12a, and an average distortion of 0% or more and 1% or less. Accordingly, the optical semiconductor device 10 provided with quantum dot 12a not depending on polarization can be provided.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：获得不依赖于极化作为增益介质的量子点。解决方案：通过形成在半导体衬底11上的量子点12a来控制极化特性，使其晶格常数大于半导体衬底11的晶格常数，平均畸变为0％以上且1％以下，阻挡层形成在量子点12a上的晶格常数小于半导体衬底11的晶格常数，半导体衬底11的晶格不匹配值大于量子点12a的失配值，平均畸变为0％以上且1％以下。因此，可以提供具有不依赖于极化的量子点12a的光学半导体装置10。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2006245373A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2006245373A
公开(公告)日：2006-09-14
申请号：JP2005060186
申请日：2005-03-04
申请人： Fujitsu Ltd , Univ Of Tokyo , 国立大学法人東京大学 , 富士通株式会社
发明人： UETAKE MASATO , EBE KOJI , KAWAGUCHI KENICHI
IPC分类号： H01S5/343 , B82Y20/00
CPC分类号： H01S5/341 , B82Y10/00 , B82Y20/00 , H01S5/3218 , H01S5/3404 , H01S5/3412 , H01S5/34373
摘要： PROBLEM TO BE SOLVED: To improve the crystallinity of a quantum dot layer, comprising a quantum dot, in a semiconductor device equipped with quantum dots.
SOLUTION: The semiconductor device is provided with the quantum dot layer 8, having a barrier layer 3 consisting of a semiconductor crystal having a first lattice constant, a plurality of quantum dots 4 consisting of the semiconductor crystal, having a second lattice constant, and side barrier layers 5 formed so as to be contacted with respective side surfaces of the plurality of quantum dots and formed of the semiconductor crystal having a third lattice constant. In this case, the barrier layer, the quantum dots and the side barrier layers are constituted so that the difference between the value of the first lattice constant and the value of the second lattice constant becomes opposite in sign of the difference between the value of the first lattice constant and the value of the third lattice constant.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：在配备有量子点的半导体器件中，提高包括量子点的量子点层的结晶度。解决方案：半导体器件设置有量子点层8，其具有由具有第一晶格常数的半导体晶体构成的阻挡层3，由半导体晶体构成的多个量子点4，具有第二晶格常数，以及形成为与多个量子点的各个侧表面接触并由具有第三晶格常数的半导体晶体形成的侧势垒层5。在这种情况下，阻挡层，量子点和侧面阻挡层被构成为使得第一晶格常数的值与第二晶格常数的值之间的差值变得相反，第一晶格常数和第三晶格常数的值。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2010225981A Optical semiconductor device, integrated element and method of manufacturing optical semiconductor device 审中-公开
标题翻译：光学半导体器件，集成元件和制造光学半导体器件的方法
公开(公告)号：JP2010225981A
公开(公告)日：2010-10-07
申请号：JP2009073478
申请日：2009-03-25
申请人： Fujitsu Ltd , Univ Of Tokyo , 国立大学法人東京大学 , 富士通株式会社
发明人： KAWAGUCHI KENICHI , EBE KOJI , ARAKAWA YASUHIKO
IPC分类号： H01S5/343 , H01L21/205 , H01S5/183
摘要： PROBLEM TO BE SOLVED: To reduce diffusion of Ge and to obtain excellent device characteristics in an optical semiconductor element comprising an active layer containing GaAs.
SOLUTION: An optical semiconductor device includes: a Ge layer 2; a first GaAs layer 3 which is formed on the Ge layer 2 and in which an As site of GaAs is partially substituted with Ga; and an active layer 4, containing GaAs, formed above the first GaAs layer 3.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了减少Ge的扩散，并且在包含含有GaAs的有源层的光学半导体元件中获得优异的器件特性。解决方案：光学半导体器件包括：Ge层2; 形成在Ge层2上并且GaAs的As位置部分被Ga取代的第一GaAs层3; 以及形成在第一GaAs层3上方的包含GaAs的有源层4.版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2008244235A Quantum dot semiconductor device 有权
标题翻译：量子半导体器件
公开(公告)号：JP2008244235A
公开(公告)日：2008-10-09
申请号：JP2007084129
申请日：2007-03-28
申请人： Fujitsu Ltd , Univ Of Tokyo , 国立大学法人東京大学 , 富士通株式会社
发明人： EBE KOJI , KAWAGUCHI KENICHI , MORITO TAKESHI , ARAKAWA YASUHIKO
IPC分类号： H01S5/343
CPC分类号： H01S5/341 , B82Y20/00 , H01S5/3086 , H01S5/309 , H01S5/3412 , H01S5/5009 , H01S2301/04 , Y10S438/962
摘要： PROBLEM TO BE SOLVED: To prevent gain in an operation wavelength from changed, even when temperature is changed in a quantum dot semiconductor device. SOLUTION: The quantum dot semiconductor device is provided with an active layer 11 having a plurality of quantum dot layers 4A, 4B, each of which includes a composite quantum dot 2 composed by laminating a plurality of quantum dots 1 and side barrier layers 3 formed so as to contact with the side faces of the composite quantum dot 2, wherein the number of laminated quantum dots 1 composing each of the quantum dot layers 4A, 4B and distortion values of the side barrier layers 3 are set so that a gain spectrum of the active layer 11 has a flat gain band that corresponds to the shift amount of a gain spectrum in a desired operation temperature range. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：即使当量子点半导体器件中的温度变化时，为了防止工作波长的增益变化。解决方案：量子点半导体器件设置有具有多个量子点层4A，4B的有源层11，每个量子点层包括通过层叠多个量子点1和侧面阻挡层而构成的复合量子点2 3形成为与复合量子点2的侧面接触，其中构成每个量子点层4A，4B的层叠量子点1的数量和侧阻挡层3的失真值被设定为使得增益有源层11的光谱具有对应于期望的操作温度范围内的增益谱的偏移量的平坦增益带。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2010153739A Optical semiconductor element and integrated element 有权
标题翻译：光学半导体元件和集成元件
公开(公告)号：JP2010153739A
公开(公告)日：2010-07-08
申请号：JP2008332918
申请日：2008-12-26
申请人： Fujitsu Ltd , Univ Of Tokyo , 国立大学法人東京大学 , 富士通株式会社
发明人： KAWAGUCHI KENICHI , EBE KOJI , ARAKAWA YASUHIKO
IPC分类号： H01S5/343 , H01L33/00 , H01S5/026 , H01S5/183 , H01S5/22
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor element which emits light in a wavelength band on a side of wavelength longer than 1.3 μm, and an integrated element.
SOLUTION: The optical semiconductor element includes an InAs quantum dot 5, a pair of InGaAs barrier layers 4 and 6 brought into contact with the top and reverse of the InAs quantum dot 5, and SiGe layers 3 and 7 brought into contact with sides of the pair of InGaAs barrier layers 4 and 6 opposite from the sides brought into contact with the InAs quantum dot 5, and having a narrower direct transition band gap than InGaAs barrier layer 4, 6, wherein thicknesses of the InGaAs barrier layers 4 and 6 that the SiGe layers 3 and 7 are brought into contact with are set so that a band gap of quantum level is made narrower than a band gap of quantum level determined by the InAs quantum dot 5 and the pair of InGaAs barrier layers 4 and 6.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种发射波长长于1.3μm波长的光的光半导体元件和集成元件。解决方案：光半导体元件包括InAs量子点5，与InAs量子点5的顶部和反向接触的一对InGaAs势垒层4和6，并且与SiGe层3和7接触与InAs量子点5接触的一对InGaAs阻挡层4和6的一侧与InAsAs量子点5接触，并且具有比InGaAs阻挡层4,6更窄的直接过渡带隙，其中InGaAs阻挡层4和从图6可以看出，SiGe层3和7被接触以使得量子级的带隙比由InAs量子点5和一对InGaAs势垒层4和6确定的量子能级的带隙更窄。。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2010103430A Structure and semiconductor optical apparatus 有权
标题翻译：结构和半导体光学装置
公开(公告)号：JP2010103430A
公开(公告)日：2010-05-06
申请号：JP2008275806
申请日：2008-10-27
申请人： Fujitsu Ltd , Univ Of Tokyo , 国立大学法人東京大学 , 富士通株式会社
发明人： KAWAGUCHI KENICHI , EBE KOJI , ARAKAWA YASUHIKO
IPC分类号： H01L31/10 , G01J1/02 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a germanium structure increasing a reduction effect of direct energy gap E 0 by tensile strain. SOLUTION: The germanium structure has a germanium particle and a buried layer covering over the germanium particle for embedding the germanium particle, and the buried layer generates the tensile strain in the germanium particle in each direction of three crystal axes of the germanium particle. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：通过拉伸应变来提供增加直接能隙E 0 的还原效果的锗结构。解决方案：锗结构具有锗颗粒和覆盖在锗颗粒上的掩埋层，用于嵌入锗颗粒，并且掩埋层在锗颗粒的三个晶轴的每个方向上在锗颗粒中产生拉伸应变。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2015007457A 円環状弾性部材を用いたダンパー有权
标题翻译：阻尼器使用环形弹性构件
公开(公告)号：JP2015007457A
公开(公告)日：2015-01-15
申请号：JP2013133131
申请日：2013-06-25
申请人：岡部株式会社 , Okabe Co Ltd , 国立大学法人東京大学 , Univ Of Tokyo , 国立大学法人東京大学
发明人： NISHIDA SHIGENORI , TAGUCHI TOMOYASU , KAWAGUCHI KENICHI
IPC分类号： F16F15/02 , F16F7/08 , F16F15/08
摘要：【課題】シリンダとシャフトとの間に設けられる円環状弾性部材を安定的に機能させることが可能で、減衰性能を確実に発揮させ得る円環状弾性部材を用いたダンパーを提供する。【解決手段】シリンダ2とシリンダ内にスライド自在に挿入されるシャフト3との間に、それらの長さ方向に沿って複数配設され、これらシャフト及びシリンダで径方向内方及び径方向外方双方から圧縮作用を受けてシャフトの外面3a及びシリンダの内面2aに圧接される円環状弾性部材4を有するダンパー1であって、円環状弾性部材の内径寸法及び円環状弾性部材が外面に圧接されるシャフトの外径寸法は、円環状弾性部材にその周方向に沿って引張応力を生じさせる引張力を付加するように設定され、円環状弾性部材が内面に圧接されるシリンダには、圧縮作用を受ける円環状弾性部材の変形を許容するスリット5が形成される。【選択図】図8
摘要翻译：要解决的问题：为了提供一种使环形弹性构件形成的阻尼器，该环形弹性构件可以使设置在气缸和轴之间的环形弹性构件起稳定的作用，并且还可以使环形弹性构件确实具有衰减性能。解决方案：阻尼器1具有多个环形弹性构件4，其布置在气缸和可滑动地插入气缸中的轴3之间，在轴和气缸处从径向方向的内侧和径向外侧接收压缩动作，并且与轴的外表面3a和气缸的内表面2a压力接触。环形弹性构件的内径尺寸和其中环形弹性构件与外表面压力接触的轴的外径尺寸被设定为使得沿着圆周方向产生拉伸应力的拉力被加到环形件弹性构件和允许接收压缩作用的环形弹性构件的变形的狭缝5形成在环形弹性构件与内表面压接的气缸中。

9. 发明专利

JP2007239892A Base isolation device 有权
标题翻译：基座隔离装置
公开(公告)号：JP2007239892A
公开(公告)日：2007-09-20
申请号：JP2006063420
申请日：2006-03-08
申请人： Okabe Co Ltd , Univ Of Tokyo , 国立大学法人東京大学 , 岡部株式会社
发明人： KAWAGUCHI KENICHI , ABE KEIICHI , ABE JUNICHIRO , YOKOYAMA SHINICHI , TAGUCHI TOMOYASU
IPC分类号： F16F15/02
摘要： PROBLEM TO BE SOLVED: To provide a stable base isolation device for providing substantially constant base isolation performance regardless of the relative positional relationship between the support object side and the support side, by improving fluctuation in contact pressure with the guide rail side and fluctuation in a rotational ratio on the basis of a position of a sphere, in a base isolation layer using a guide rail and the sphere.
SOLUTION: This base isolation device has the guide rail 1 having mutually separately arranged opposed inclined faces 5 and 6 each composed of a specific inclination and constituted so that an interval between the mutual these inclined faces 5 and 6 becomes gradually small toward both outside ends from a central part, and the sphere 2 rolling by abutting from the inside on the respective inclined faces 5 and 6 of this guide rail. The return function is imparted by displacement in the height direction of the sphere 2 itself generated when its sphere 2 rolls to the outside end side from the central part while abutting on the inclined faces 5 and 6.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种稳定的基座隔离装置，用于提供基本上恒定的基座隔离性能，而不管支撑物体侧和支撑侧之间的相对位置关系如何，通过改善与导轨侧的接触压力的波动和基于球的位置的旋转比的波动，使用导轨的基底隔离层和球体。解决方案：该基座隔离装置具有导轨1，该导轨1具有相互分开设置的相对的倾斜面5和6，每个倾斜面由特定倾斜度构成，使得这两个倾斜面5和6相互之间的间隔逐渐变小从中心部分的外侧端部，并且球体2通过从该导轨的相应倾斜面5和6上的内侧抵接而滚动。返回功能在球体2自身产生的高度方向上的位移被赋予，当球体2在与倾斜面5和6抵接时从中心部分向外侧端部滚动。（C）2007 ，JPO＆INPIT

10. 发明专利

JP2007239180A Base isolated structure and abnormal displacement preventing device for the base isolated structure 审中-公开
标题翻译：基础隔离结构和异常位移防止基础隔离结构的设备
公开(公告)号：JP2007239180A
公开(公告)日：2007-09-20
申请号：JP2006058782
申请日：2006-03-05
申请人： Okabe Co Ltd , Univ Of Tokyo , 国立大学法人東京大学 , 岡部株式会社
发明人： KAWAGUCHI KENICHI , ABE KEIICHI , ABE JUNICHIRO , YOKOYAMA SHINICHI , TAGUCHI TOMOYASU
IPC分类号： E04H9/02 , E04H9/14 , F16F15/02
摘要： PROBLEM TO BE SOLVED: To provide an abnormal displacement preventing technique for a base isolated structure, which can prevent abnormal displacement falling out of a base isolation region when an expected large external force by wind or the like is applied to a building and the abnormal displacement falling out of the base isolation region occurs between an upper structure and a lower structure, by dispersing the external force to abnormal displacement preventing devices, and facilitates recovery of the upper structure to its original position after cancellation of the external force.
SOLUTION: When three or more abnormal displacement preventing devices 1 for preventing the abnormal displacement falling out of the base isolation region, occurring between the lower structure and the upper structure, are set in addition to base isolation devices, each abnormal displacement preventing device 1 should have a displacing direction converting slope surface 2 for converting horizontal displacement between the lower structure and the upper structure into vertical displacement, and by virtue of cooperation of displacement preventing actions based on the respective slope surfaces 2, the abnormal displacement falling out of the base isolation region between the upper and lower structures can be prevented.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于基座隔离结构的异常位移防止技术，其可以防止当通过风等预期的大的外力施加到建筑物时异常位移从基部隔离区域脱落，并且通过将外力分散到异常位移防止装置，在上部结构和下部结构之间发生从基部隔离区域脱落的异常位移，并且有助于在消除外力之后将上部结构恢复到其原始位置。解决方案：除了基础隔离装置之外，还设置有三个以上用于防止异常位移从基础隔离区域脱落出现在下部结构和上部结构之间的异常位移防止装置1，每个异常位移防止装置1应具有一个位移方向转换斜面2，用于将下结构和上结构之间的水平位移转换成垂直位移，并且由于基于相应的倾斜面2的位移防止动作协调，异常位移脱离可以防止上下结构之间的基本隔离区域。版权所有（C）2007，JPO＆INPIT

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