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1. 发明专利

JP5056347B2 A method for manufacturing the optical semiconductor device 有权
公开(公告)号：JP5056347B2
公开(公告)日：2012-10-24
申请号：JP2007280855
申请日：2007-10-29
申请人：住友電気工業株式会社
发明人：正和成田
IPC分类号： H01S5/227 , H01L21/027
CPC分类号： H01S5/227 , B82Y20/00 , G02F2001/133354 , H01S5/02 , H01S5/0201 , H01S5/2275 , H01S5/34306 , H01S2304/00

2. 发明专利

JP4884866B2 The method of manufacturing the nitride semiconductor device 有权
公开(公告)号：JP4884866B2
公开(公告)日：2012-02-29
申请号：JP2006201652
申请日：2006-07-25
申请人：三菱電機株式会社
发明人：仁佐久間 , 淳一堀江 , 勝臣塩沢 , 敏之大石 , 和重川崎 , 俊彦志賀 , 恭三金本
IPC分类号： H01S5/042 , H01L21/28 , H01L33/12 , H01L33/32 , H01L33/36 , H01L33/40 , H01S5/323
CPC分类号： H01S5/22 , H01L33/0095 , H01L33/32 , H01L33/40 , H01S5/0425 , H01S5/32341 , H01S2301/173 , H01S2304/00

3. 发明专利

JP4871241B2 Optical semiconductor device and a method of manufacturing the same 有权
公开(公告)号：JP4871241B2
公开(公告)日：2012-02-08
申请号：JP2007262253
申请日：2007-10-05
申请人：ルネサスエレクトロニクス株式会社
发明人：康隆阪田
IPC分类号： H01S5/227
CPC分类号： H01S5/3434 , B82Y20/00 , H01S5/2226 , H01S5/2275 , H01S5/3054 , H01S2304/00 , H01S2304/04

4. 发明专利

JP4412827B2 Nitride semiconductor thick film substrate 有权
公开(公告)号：JP4412827B2
公开(公告)日：2010-02-10
申请号：JP2000233010
申请日：2000-08-01
申请人：シャープ株式会社
发明人：吉裕上田 , 淳小河 , 有三津田 , 貴之湯浅 , 元隆種谷 , 正浩荒木
IPC分类号： H01S5/323 , H01L21/205 , H01L33/32 , H01L33/36 , H01S5/02 , H01S5/30 , H01S5/343
CPC分类号： H01L33/325 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/32 , H01S5/0213 , H01S5/0218 , H01S5/305 , H01S5/34333 , H01S2304/00

5. 发明专利

JP2008251562A Semiconductor laser element and forming method therefor 审中-公开
标题翻译：半导体激光元件及其形成方法
公开(公告)号：JP2008251562A
公开(公告)日：2008-10-16
申请号：JP2007086994
申请日：2007-03-29
申请人： Sharp Corp , シャープ株式会社
发明人： OMI SUSUMU , KISHIMOTO KATSUHIKO
IPC分类号： H01S5/22
CPC分类号： H01S5/22 , B82Y20/00 , H01L22/26 , H01S5/0014 , H01S5/0425 , H01S5/209 , H01S5/2214 , H01S5/2277 , H01S5/34306 , H01S5/3436 , H01S2301/18 , H01S2304/00
摘要： PROBLEM TO BE SOLVED: To provide a fabrication process of semiconductor laser element which can reduce the manufacturing dispersion in the emission angle in the horizontal direction, while restraining occurrence of stage-cut. SOLUTION: The fabrication process of a semiconductor laser element 100 comprises a step for forming a semiconductor element layer 50 comprising a plurality of semiconductor layers that include an etching marker layer 8 on an n-type GaAs substrate 1; a step for forming a recess 21 having a depth of about 85 nm and not reaching the etching marker layer 8, in the contact layer 11 of the semiconductor element layer 50; and a step for forming a ridge 12 by etching the semiconductor element layer 50, by using the dry etching method, while detecting the etching depth in the footprint region of the recess 21 by means of a laser beam. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种半导体激光元件的制造工艺，其可以在抑制阶段切割的发生的同时降低水平方向上的发光角度的制造偏差。解决方案：半导体激光元件100的制造工艺包括用于形成包括在n型GaAs衬底1上包括蚀刻标记层8的多个半导体层的半导体元件层50的步骤; 在半导体元件层50的接触层11中形成深度约为85nm而没有到达蚀刻标记层8的凹部21的步骤; 以及通过使用干蚀刻方法通过蚀刻半导体元件层50同时通过激光束检测凹部21的覆盖区域中的蚀刻深度来形成脊12的步骤。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2008124060A Group iii nitride compound semiconductor light-emitting element and manufacturing method thereof, and lamp 审中-公开
标题翻译：第III组氮化物半导体发光元件及其制造方法及灯
公开(公告)号：JP2008124060A
公开(公告)日：2008-05-29
申请号：JP2006302814
申请日：2006-11-08
申请人： Showa Denko Kk , 昭和電工株式会社
发明人： YOKOYAMA TAISUKE , MIKI HISAYUKI
IPC分类号： H01L33/06 , H01L33/32 , H01L33/42
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02631 , H01L21/02658 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H01S5/0213 , H01S5/02244 , H01S5/0425 , H01S5/305 , H01S5/3063 , H01S5/34333 , H01S2301/173 , H01S2304/00 , H01L2924/00014 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a group III nitride compound semiconductor light-emitting element that has excellent productivity and can obtain an element having superior light emission characteristics, and to provide the group III nitride compound semiconductor light-emitting element and a lamp. SOLUTION: By the manufacturing method, an intermediate layer 12 made of a group III nitride compound is formed by activating gas containing a group V element and a metal material by plasma for reaction on a substrate 11, and an n type semiconductor layer 14 comprising a group III nitride compound semiconductor, a light-emitting layer 15, and a p-type semiconductor layer 16 are laminated successively on the intermediate layer 12. In this case, the intermediate layer 12 is formed with a film thickness of 20-80 nm with the group V element as nitrogen. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种制造具有优异生产率并可获得具有优异发光特性的元素的III族氮化物化合物半导体发光元件的制造方法，并且提供III族氮化物化合物半导体发光元件，发光元件和灯。解决方案：通过制造方法，通过在基板11上激活含有V族元素和金属材料的等离子体进行反应来形成由III族氮化物化合物制成的中间层12，并且n型半导体层包含III族氮化物化合物半导体，发光层15和p型半导体层16的层叠层14依次层叠在中间层12上。在这种情况下，中间层12的膜厚为20〜 80nm，V族元素为氮。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2008085301A Surface-emission laser, surface-emission laser array, optical scanning apparatus, and image forming apparatus 有权
标题翻译：表面发射激光，表面发射激光阵列，光学扫描装置和图像形成装置
公开(公告)号：JP2008085301A
公开(公告)日：2008-04-10
申请号：JP2007176356
申请日：2007-07-04
申请人： Ricoh Co Ltd , 株式会社リコー
发明人： ITO AKIHIRO , SATO SHUNICHI
IPC分类号： H01S5/187 , B41J2/44
CPC分类号： H01S5/18322 , B82Y20/00 , H01S5/18311 , H01S5/18338 , H01S5/18355 , H01S5/3202 , H01S5/34313 , H01S5/423 , H01S2304/00 , H04N1/1135 , H04N1/1912 , H04N1/1917
摘要： PROBLEM TO BE SOLVED: To provide a surface-emission laser whose polarization mode is stable without increasing costs.
SOLUTION: A current constriction region is formed at a position where the center is deviated from the center of a mesa to a laser oscillation direction, and anisotropy is generated in a thermal resistance when heat is radiated from a heating region in the neighborhood of the current constriction region in an active layer 105. Thus, the thermal resistance in a shorter distance is made small, and the refractive index of the region in the shorter distance is made longer than the refractive index of the other region. Therefore, anisotropy is generated in the optical characteristics of a resonator, and the symmetry of the resonator collapses, and the electric field polarization of oscillating rays of light is stabilized.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种其极化模式稳定而不增加成本的表面发射激光器。解决方案：在中心偏离台面中心到激光振荡方向的位置处形成电流收缩区域，并且当从邻近区域的加热区域辐射热量时，在热阻中产生各向异性在有源层105中的电流收缩区域。因此，使较短距离的热电阻变小，并且使较短距离中的区域的折射率比其他区域的折射率长。因此，在谐振器的光学特性中产生各向异性，并且谐振器的对称性塌陷，并且使振荡光线的电场极化稳定。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2006202826A Semiconductor optical device manufactured on substrate, and manufacturing method thereof 有权
标题翻译：基板制造的半导体光器件及其制造方法
公开(公告)号：JP2006202826A
公开(公告)日：2006-08-03
申请号：JP2005010248
申请日：2005-01-18
申请人： Takashi Katoda , 隆河東田
发明人： KATODA TAKASHI
IPC分类号： H01L33/12 , H01L33/34 , H01L33/42 , H01S5/32
CPC分类号： H01L31/032 , H01L27/148 , H01L33/26 , H01S5/2214 , H01S5/2231 , H01S5/305 , H01S5/3054 , H01S5/327 , H01S2304/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor optical device that is manufactured on a substrate comprising a group IV element semiconductor, a group III-V compound semiconductor, a group II-VI compound semiconductor, a group IV compound semiconductor, an organic compound semiconductor, a metal crystal, their derivatives, or glass, and functions so that it emits or absorbs light having a short wavelength. SOLUTION: The semiconductor optical device contains a highly pure molybdenum oxide formed on the substrate made of a material used for an existing semiconductor device, thus achieving an inexpensive optical device for emitting or absorbing light from a deep ultraviolet wavelength region to a visible wavelength region. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造在包括IV族元素半导体，III-V族化合物半导体，II-VI族化合物半导体，IV族化合物半导体的基板上的半导体光学器件，有机化合物半导体，金属晶体，其衍生物或玻璃，并且发挥或吸收具有短波长的光的功能。解决方案：半导体光学器件包含在由用于现有半导体器件的材料制成的衬底上形成的高纯度氧化钼，从而实现用于发射或吸收从深紫外线波长区域到可见光的光的便宜的光学器件波长区域。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JPWO2004064212A1 窒化物半導体素子及びその製造方法、並びに窒化物半導体基板の製造方法有权
公开(公告)号：JPWO2004064212A1
公开(公告)日：2006-05-18
申请号：JP2005508004
申请日：2004-01-14
申请人：松下電器産業株式会社
发明人：菅原　岳 , 岳菅原 , 川口　靖利 , 靖利川口 , 石橋　明彦 , 明彦石橋 , 横川　俊哉 , 俊哉横川 , 敦松原 , 敦松原
IPC分类号： H01L21/205 , C23C16/34 , H01L21/20 , H01S5/02 , H01S5/323 , H01S5/343
CPC分类号： H01S5/32341 , H01L21/02378 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/0265 , H01S5/0207 , H01S5/0213 , H01S5/0217 , H01S5/1017 , H01S5/22 , H01S2304/00 , H01S2304/12
摘要：空隙からなる凹部(102b)およびIII族窒化物からなる凸部(102a)が表面に形成されている基板(101)と、基板(101)上に形成された窒化物半導体層(106)と、窒化物半導体層(106)上に形成され活性層を有する窒化物半導体積層体とを備え、基板(101)の格子定数は、III族窒化物(102a)の格子定数とは異なり、基板(101)は誘電体(104)からなるマスク(104a)を有しており、マスク(104a)は、凸部(102a)の側面にのみ形成され、凸部(102a)の上面は露出しており、かつ凹部(102b)には基板(101)が露出しており、マスク(104a)の高さL1は、50nm以上5000nm以下であり、凹部(102b)の幅L2は、5000nm以上50000nm以下であり、凹部(102b)のアスペクト比L1/L2は、0.001以上1.0以下である窒化物半導体素子である。このような構成により、窒化物半導体素子の信頼性を高めることができる。

10. 发明专利

JP2005019934A Manufacturing method of semiconductor laser element 审中-公开
标题翻译：半导体激光元件的制造方法
公开(公告)号：JP2005019934A
公开(公告)日：2005-01-20
申请号：JP2003345509
申请日：2003-10-03
申请人： Samsung Electro Mech Co Ltd , 三星電機株式会社
发明人： KIN TOSHUN , MOON BYUNG DEUK , HAN SANG HEON
IPC分类号： H01S5/22 , B29D11/00 , H01S3/038 , H01S5/042 , H01S5/20 , H01S5/223 , H01S5/343
CPC分类号： H01S5/0421 , H01S5/2081 , H01S5/2206 , H01S5/2231 , H01S2304/00
摘要： PROBLEM TO BE SOLVED: To minimize electrode connection failure by improving a bad surface condition of a current breaking layer due to a ridge structure, so that crystallinity and a surface condition of a second conductive type cap layer are improved, in a method for manufacturing a semiconductor laser element.
SOLUTION: This method for manufacturing the semiconductor laser element comprises a step for forming a first conductive type cladding layer, an active layer and a second conductive type cladding layer on a first conductive type semiconductor substrate in this order, a step for forming a ridge structure by selectively etching the second conductive type cladding layer, a step for forming the current breaking layer around the ridge structure: that is a step for forming a raised ridge on a top surface of the current breaking layer in this way, forming an amorphous and/or polycrystalline layer in a partial region thereof, removing at least the amorphous and/or polycrystalline layer from the current breaking layer and wet-etching the top surface of the current breaking layer so that the raised part is made smaller; and a step for forming a second conductive type contact layer on the top surface of the current breaking layer.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了通过改善由于脊结构引起的电流断裂层的不良表面状况来最小化电极连接故障，从而提高了第二导电型盖层的结晶度和表面状态，在方法用于制造半导体激光元件。解决方案：这种制造半导体激光元件的方法包括以下步骤：在第一导电型半导体衬底上依次形成第一导电型包覆层，有源层和第二导电型包层，形成步骤通过选择性地蚀刻第二导电型包层的脊结构，用于在脊结构周围形成电流断裂层的步骤：即以这种方式在当前断裂层的顶表面上形成凸脊的步骤，形成非晶和/或多晶层，从当前断裂层至少去除非晶和/或多晶层，并湿法蚀刻电流断裂层的顶表面，使凸起部分变小; 以及在电流断裂层的顶面上形成第二导电型接触层的工序。版权所有（C）2005，JPO＆NCIPI

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