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    • 1. 发明专利
    • Manufacturing method of multiple wavelength semiconductor laser
    • 多波长半导体激光器的制造方法
    • JP2006245531A
    • 2006-09-14
    • JP2005301008
    • 2005-10-14
    • Samsung Electro Mech Co Ltd三星電機株式会社
    • SONG KEUN MANLEE SU YEOLKIM JIN CHULKIM TAE-JOONKIM CHANG ZOOHAN SANG HEON
    • H01S5/22
    • H01S5/4031H01S5/209H01S5/32316H01S5/32325H01S5/4087
    • PROBLEM TO BE SOLVED: To provide a manufacturing method of improved multiple wavelength semiconductor laser devices.
      SOLUTION: A manufacturing method of multiple wavelength semiconductor laser comprises: preparing a substrate 21 with the upper surface divided into a first region and a second region; successively forming an AlGaAs-based epitaxial layer for a first semiconductor laser and an etching stop layer, comprising Al
      x Ga
      y In
      (1-x-y) P(0≤x≤1, 0≤y≤1); selectively removing the etching stop layer and the AlGaAs-based epitaxial layer from the second region of the substrate; successively growing an n-type GaAs planarized buffer layer and the AlGaInP epitaxial layer for the second semiconductor laser on the substrate; selectively removing the AlGaInP-based epitaxial layer, located on the upper part of the AlGaAs-based epitaxial layer; successively removing the n-type GaAs planarized buffer layer and the etching stop layer from the upper part of the AlGaAs-based epitaxial layer; and isolating the AlGaAs-based epitaxial layer from the AlGaInP-based epitaxial layer.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供改进多波长半导体激光器件的制造方法。 解决方案:多波长半导体激光器的制造方法包括:准备基板21,其上表面被划分为第一区域和第二区域; 连续形成第一半导体激光器和蚀刻停止层的AlGaAs基外延层,包括Al(SB)(1-xy) > P(0≤x≤1,0≤y≤1); 从衬底的第二区域选择性地去除蚀刻停止层和AlGaAs基外延层; 在衬底上连续生长n型GaAs平坦化缓冲层和用于第二半导体激光器的AlGaInP外延层; 选择性去除位于AlGaAs基外延层上部的AlGaInP基外延层; 从AlGaAs基外延层的上部依次去除n型GaAs平坦化缓冲层和蚀刻停止层; 以及从基于AlGaInP的外延层中分离出基于AlGaAs的外延层。 版权所有(C)2006,JPO&NCIPI
    • 4. 发明专利
    • Manufacturing method of semiconductor laser element
    • 半导体激光元件的制造方法
    • JP2005019934A
    • 2005-01-20
    • JP2003345509
    • 2003-10-03
    • Samsung Electro Mech Co Ltd三星電機株式会社
    • KIN TOSHUNMOON BYUNG DEUKHAN SANG HEON
    • H01S5/22B29D11/00H01S3/038H01S5/042H01S5/20H01S5/223H01S5/343
    • H01S5/0421H01S5/2081H01S5/2206H01S5/2231H01S2304/00
    • PROBLEM TO BE SOLVED: To minimize electrode connection failure by improving a bad surface condition of a current breaking layer due to a ridge structure, so that crystallinity and a surface condition of a second conductive type cap layer are improved, in a method for manufacturing a semiconductor laser element.
      SOLUTION: This method for manufacturing the semiconductor laser element comprises a step for forming a first conductive type cladding layer, an active layer and a second conductive type cladding layer on a first conductive type semiconductor substrate in this order, a step for forming a ridge structure by selectively etching the second conductive type cladding layer, a step for forming the current breaking layer around the ridge structure: that is a step for forming a raised ridge on a top surface of the current breaking layer in this way, forming an amorphous and/or polycrystalline layer in a partial region thereof, removing at least the amorphous and/or polycrystalline layer from the current breaking layer and wet-etching the top surface of the current breaking layer so that the raised part is made smaller; and a step for forming a second conductive type contact layer on the top surface of the current breaking layer.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:为了通过改善由于脊结构引起的电流断裂层的不良表面状况来最小化电极连接故障,从而提高了第二导电型盖层的结晶度和表面状态,在方法 用于制造半导体激光元件。 解决方案:这种制造半导体激光元件的方法包括以下步骤:在第一导电型半导体衬底上依次形成第一导电型包覆层,有源层和第二导电型包层,形成步骤 通过选择性地蚀刻第二导电型包层的脊结构,用于在脊结构周围形成电流断裂层的步骤:即以这种方式在当前断裂层的顶表面上形成凸脊的步骤,形成 非晶和/或多晶层,从当前断裂层至少去除非晶和/或多晶层,并湿法蚀刻电流断裂层的顶表面,使凸起部分变小; 以及在电流断裂层的顶面上形成第二导电型接触层的工序。 版权所有(C)2005,JPO&NCIPI