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1. 发明专利

JP2006245531A Manufacturing method of multiple wavelength semiconductor laser 审中-公开
标题翻译：多波长半导体激光器的制造方法
公开(公告)号：JP2006245531A
公开(公告)日：2006-09-14
申请号：JP2005301008
申请日：2005-10-14
申请人： Samsung Electro Mech Co Ltd , 三星電機株式会社
发明人： SONG KEUN MAN , LEE SU YEOL , KIM JIN CHUL , KIM TAE-JOON , KIM CHANG ZOO , HAN SANG HEON
IPC分类号： H01S5/22
CPC分类号： H01S5/4031 , H01S5/209 , H01S5/32316 , H01S5/32325 , H01S5/4087
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of improved multiple wavelength semiconductor laser devices.
SOLUTION: A manufacturing method of multiple wavelength semiconductor laser comprises: preparing a substrate 21 with the upper surface divided into a first region and a second region; successively forming an AlGaAs-based epitaxial layer for a first semiconductor laser and an etching stop layer, comprising Al
x Ga
y In
(1-x-y) P(0≤x≤1, 0≤y≤1); selectively removing the etching stop layer and the AlGaAs-based epitaxial layer from the second region of the substrate; successively growing an n-type GaAs planarized buffer layer and the AlGaInP epitaxial layer for the second semiconductor laser on the substrate; selectively removing the AlGaInP-based epitaxial layer, located on the upper part of the AlGaAs-based epitaxial layer; successively removing the n-type GaAs planarized buffer layer and the etching stop layer from the upper part of the AlGaAs-based epitaxial layer; and isolating the AlGaAs-based epitaxial layer from the AlGaInP-based epitaxial layer.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供改进多波长半导体激光器件的制造方法。解决方案：多波长半导体激光器的制造方法包括：准备基板21，其上表面被划分为第一区域和第二区域; 连续形成第一半导体激光器和蚀刻停止层的AlGaAs基外延层，包括Al（SB）（1-xy） > P（0≤x≤1,0≤y≤1）; 从衬底的第二区域选择性地去除蚀刻停止层和AlGaAs基外延层; 在衬底上连续生长n型GaAs平坦化缓冲层和用于第二半导体激光器的AlGaInP外延层; 选择性去除位于AlGaAs基外延层上部的AlGaInP基外延层; 从AlGaAs基外延层的上部依次去除n型GaAs平坦化缓冲层和蚀刻停止层; 以及从基于AlGaInP的外延层中分离出基于AlGaAs的外延层。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2007180499A Nitride semiconductor light-emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：JP2007180499A
公开(公告)日：2007-07-12
申请号：JP2006286528
申请日：2006-10-20
申请人： Samsung Electro Mech Co Ltd , 三星電機株式会社
发明人： HAN SANG HEON , GO HOGEN , KIM JE WON , SHIM HYUN WOOK , KANG JOONG SEO , LEE DONG JU
IPC分类号： H01L33/06 , H01L33/12 , H01L33/14 , H01L33/32
CPC分类号： H01L33/04 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting device whose brightness and reliability have been improved.
SOLUTION: This nitride semiconductor light-emitting device comprises an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer which have been formed sequentially on a substrate; an n-side electrode provided on a part of an upper surface of of the n-type nitride semiconductor layer; and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. In addition, the intermediate layer has a multilayer structure having three or more layers with different band gaps and lies in a position lower than that of the n-side electrode.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种其亮度和可靠性得到改善的氮化物半导体发光器件。解决方案：该氮化物半导体发光器件包括在衬底上顺序形成的n型氮化物半导体层，有源层和p型氮化物半导体层; 设置在所述n型氮化物半导体层的上表面的一部分上的n侧电极; 以及形成在所述基板和所述n型氮化物半导体层之间的至少一个中间层。此外，中间层具有三层以上具有不同带隙的层并且位于比n侧电极低的位置的多层结构。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2006128675A Method of manufacturing multiwavelength semiconductor laser 审中-公开
标题翻译：制造多波长半导体激光器的方法
公开(公告)号：JP2006128675A
公开(公告)日：2006-05-18
申请号：JP2005306024
申请日：2005-10-20
申请人： Samsung Electro Mech Co Ltd , 三星電機株式会社
发明人： KIM JIN CHUL , LEE SU YEOL , KIM CHANG ZOO , HAN SANG HEON , SONG KEUN MAN , KIM TAE-JOON , CHOI SEOK BEOM
IPC分类号： H01S5/22 , H01S5/026
CPC分类号： H01S5/4031 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02488 , H01L21/02505 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01S5/2231 , H01S5/4087 , H01S2304/04
摘要： PROBLEM TO BE SOLVED: To provide methods of manufacturing a two-wavelength semiconductor laser device and a multiwavelength semiconductor laser device which have excellent crystallinity and easy laser alignment. SOLUTION: A method of manufacturing a multiwavelength semiconductor laser comprises: a step of providing a substrate 31 having an upper surface separated into at least first and second areas; a step of forming a first dielectric mask 32 on the substrate to expose the first area 31a only; a step of growing epitaxial layers 33a, 34a, 35a, and 36a for a first semiconductor laser on the first area of the substrate; a step of forming a second dielectric mask 37 on the substrate to expose the second area 31b only; and a step of growing epitaxial layers 33b, 34b, 35b, and 36b for a second semiconductor laser on the second area of the substrate. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供具有优异的结晶度和易于激光对准的双波长半导体激光器件和多波长半导体激光器件的制造方法。解决方案：制造多波长半导体激光器的方法包括：提供具有分隔成至少第一和第二区域的上表面的基板31的步骤; 在基板上形成第一电介质掩模32以暴露第一区域31a的步骤; 在衬底的第一区域上生长用于第一半导体激光器的外延层33a，34a，35a和36a的步骤; 在基板上形成第二电介质掩模37以暴露第二区域31b的步骤; 以及在衬底的第二区域上生长用于第二半导体激光器的外延层33b，34b，35b和36b的步骤。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2005019934A Manufacturing method of semiconductor laser element 审中-公开
标题翻译：半导体激光元件的制造方法
公开(公告)号：JP2005019934A
公开(公告)日：2005-01-20
申请号：JP2003345509
申请日：2003-10-03
申请人： Samsung Electro Mech Co Ltd , 三星電機株式会社
发明人： KIN TOSHUN , MOON BYUNG DEUK , HAN SANG HEON
IPC分类号： H01S5/22 , B29D11/00 , H01S3/038 , H01S5/042 , H01S5/20 , H01S5/223 , H01S5/343
CPC分类号： H01S5/0421 , H01S5/2081 , H01S5/2206 , H01S5/2231 , H01S2304/00
摘要： PROBLEM TO BE SOLVED: To minimize electrode connection failure by improving a bad surface condition of a current breaking layer due to a ridge structure, so that crystallinity and a surface condition of a second conductive type cap layer are improved, in a method for manufacturing a semiconductor laser element.
SOLUTION: This method for manufacturing the semiconductor laser element comprises a step for forming a first conductive type cladding layer, an active layer and a second conductive type cladding layer on a first conductive type semiconductor substrate in this order, a step for forming a ridge structure by selectively etching the second conductive type cladding layer, a step for forming the current breaking layer around the ridge structure: that is a step for forming a raised ridge on a top surface of the current breaking layer in this way, forming an amorphous and/or polycrystalline layer in a partial region thereof, removing at least the amorphous and/or polycrystalline layer from the current breaking layer and wet-etching the top surface of the current breaking layer so that the raised part is made smaller; and a step for forming a second conductive type contact layer on the top surface of the current breaking layer.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了通过改善由于脊结构引起的电流断裂层的不良表面状况来最小化电极连接故障，从而提高了第二导电型盖层的结晶度和表面状态，在方法用于制造半导体激光元件。解决方案：这种制造半导体激光元件的方法包括以下步骤：在第一导电型半导体衬底上依次形成第一导电型包覆层，有源层和第二导电型包层，形成步骤通过选择性地蚀刻第二导电型包层的脊结构，用于在脊结构周围形成电流断裂层的步骤：即以这种方式在当前断裂层的顶表面上形成凸脊的步骤，形成非晶和/或多晶层，从当前断裂层至少去除非晶和/或多晶层，并湿法蚀刻电流断裂层的顶表面，使凸起部分变小; 以及在电流断裂层的顶面上形成第二导电型接触层的工序。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2010028072A Nitride semiconductor light emitting element 有权
标题翻译：氮化物半导体发光元件
公开(公告)号：JP2010028072A
公开(公告)日：2010-02-04
申请号：JP2008328560
申请日：2008-12-24
申请人： Kwangju Inst Of Science & Technol , Samsung Electro Mechanics Co Ltd , 三星電機株式会社 , 光州科學技術院
发明人： KANG SANG WON , PARK SEONG JU , KWON MIN KI , RI SOSHUN , CHO JOO YOUNG , KIM YONG-CHUN , HAN SANG HEON , LEE DONG JU , OH JEONG TAK , KIM JE WON
IPC分类号： H01L33/32
CPC分类号： H01L33/06 , H01L33/025 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element capable of preventing diffusion of Mg doped in a barrier layer. SOLUTION: In this nitride semiconductor light emitting element wherein a buffer layer, an N-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially stacked on a substrate, the active layer has a multiple quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-type doped barrier layer doped with a p-type dopant and an undoped barrier layer at least on one side of a p-type GaN layer. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够防止在阻挡层中掺杂的Mg扩散的氮化物半导体发光元件。解决方案：在缓冲层，N型氮化物半导体层，有源层和p型氮化物半导体层依次层叠在衬底上的氮化物半导体发光元件中，有源层具有多个量子其中多个势垒层和多个阱层彼此交替布置，并且所述多个势垒层中的至少一个包括第一势垒层，所述第一阻挡层包括掺杂有p型掺杂阻挡层的p型掺杂阻挡层掺杂剂和至少在p型GaN层的一侧上的未掺杂势垒层。版权所有（C）2010，JPO＆INPIT

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