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1. 发明专利

JP2005193302A Method for rolling gear-shaped member 有权
标题翻译：用于滚动齿轮构件的方法
公开(公告)号：JP2005193302A
公开(公告)日：2005-07-21
申请号：JP2005065840
申请日：2005-03-09
申请人： Toyota Central Res & Dev Lab Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： TANAKA TOSHIAKI , TSUCHIYA YOSHINARI , ONISHI MASAZUMI , YAMAMOTO IZURU , FUJIWARA YASUYUKI
IPC分类号： B21H5/00
摘要： PROBLEM TO BE SOLVED: To provide a form-rolling method of a gear-shaped member in which it is advantageous to suppress vibration in the early stage of form rolling, and which makes stabilization of a dividing process by which the number of teeth is divided at a prescribed pitch possible and in which it is advantageous to reduce the damage to the form-rolling device.
SOLUTION: By the form-rolling method of the gear-shaped member, the gear-shaped member is rolled by performing form rolling to the outer peripheral part of a blank 4 with the working teeth of a roller die 1 by using the roller die 1 provided with a plurality of the working teeth for performing the form rolling to the blank 4 on the outer peripheral part and forcing the roller die 1 in the outer peripheral part of the blank 4 at a prescribed speed while rotating the roller die 1. The forcing speed of the roller die 1 in the early stage of the form rolling is set larger than the forcing speed of the roller die 1 after the early stage of the form rolling and the amount of forcing for setting the larger forcing speed of the roller die 1 in the early stage of the form rolling is taken as ≤40% of the whole amount of forcing of the roller die 1.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种齿形构件的成形轧制方法，其中有利于在成型轧制的早期阶段抑制振动，并且这使得将分割过程的稳定化齿可以以规定的间距分割，并且有利于减少对成形滚动装置的损坏。解决方案：通过齿轮形构件的成形方法，通过使用滚子模具1的加工齿进行成形滚轧到坯料4的外周部分来卷绕齿轮构件辊模1具有多个工作齿，用于对外周部分的坯件4进行成形轧制，并且在辊模1旋转的同时迫使辊模1在坯料4的外周部分中以规定的速度轧制模具1的早期阶段的成形轧制的强制速度被设定为大于轧制模具的早期阶段的压模1的强制速度，以及用于设定较大的强制速度的强制量轧辊模具1在轧制模具的早期被认为是辊模1的全部强度的≤40％。（C）2005，JPO＆NCIPI

2. 发明专利

JP2011098870A APPARATUS AND METHOD FOR PRODUCING SiC SINGLE CRYSTAL 有权
标题翻译：用于生产SiC单晶的装置和方法
公开(公告)号：JP2011098870A
公开(公告)日：2011-05-19
申请号：JP2009256066
申请日：2009-11-09
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： SAKAMOTO HIDEMITSU , NAKAJIMA SATOSHIGE , FUJIWARA YASUYUKI , IKEMURA YUJI
IPC分类号： C30B29/36 , C30B19/06
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and method for producing an SiC single crystal, by which deposition of a SiC polycrystal is restrained when the SiC single crystal is produced by a solution method. SOLUTION: The apparatus for producing an SiC single crystal includes: a graphite crucible 2 for accommodating a raw material melt 1 serving as a raw material of the SiC single crystal; a heating means 3 arranged at the periphery of the graphite crucible 2; and a seed crystal holding part 5 arranged movably in the vertical direction at the upper part of the graphite crucible 2, and grows the SiC single crystal below a seed crystal 4 by immersing the seed crystal 4 held at the lower end of the seed crystal holding part 5 into the raw material melt 1 in the graphite crucible 2. A heat shielding material 6 is arranged at least in a portion of a part, where the liquid surface of the raw material melt 1 is brought into contact with the inner wall of the graphite crucible 2, on the inner wall of the graphite crucible 2 so as to prevent the contact between the liquid surface of the raw material melt 1 and the inner wall. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造SiC单晶的装置和方法，当通过溶液法制造SiC单晶时，通过其抑制SiC多晶体的沉积。解决方案：用于制造SiC单晶的设备包括：用于容纳用作SiC单晶原料的原料熔体1的石墨坩埚2; 布置在石墨坩埚2周边的加热装置3; 以及在石墨坩埚2的上部沿垂直方向可移动地设置的晶种保持部5，并且通过将保持在晶种保持的下端的晶种4浸渍在籽晶4的下方而使SiC单晶生长部分5放入石墨坩埚2中的原料熔体1中。隔热材料6至少设置在原料熔体1的液面与其内壁接触的部分的至少一部分上石墨坩埚2在石墨坩埚2的内壁上，以防止原料熔体1的液面与内壁之间的接触。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2009179491A METHOD FOR PRODUCING p-SiC SEMICONDUCTOR SINGLE CRYSTAL AND p-SiC SEMICONDUCTOR SINGLE CRYSTAL PRODUCED THEREBY 有权
标题翻译：用于生产p-SiC半导体单晶和p-SiC半导体的单晶生产方法
公开(公告)号：JP2009179491A
公开(公告)日：2009-08-13
申请号：JP2008018027
申请日：2008-01-29
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： SEKI AKINORI , FUJIWARA YASUYUKI
IPC分类号： C30B29/36 , C30B19/04
CPC分类号： C30B29/36 , C30B15/00 , C30B19/00
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a p-SiC semiconductor single crystal with a resistivity reduced to a practical level and to provide a p-SiC semiconductor single crystal produced thereby.
SOLUTION: A method for producing a p-SiC semiconductor single crystal by a solution method which is a method for growing the p-SiC semiconductor single crystal on an SiC single crystal substrate from a solution formed by dissolving C in an Si melt, wherein a solution prepared further adding to the above solution Al and N in amounts satisfying the relationship: the amount of Al added>the amount of N added is used. A p-SiC semiconductor single crystal containing as impurities 1×10
20 cm
-3 Al and 2×10
18 to 7×10
18 cm
-3 N is also provided.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种电阻率降低到实用水平的p-SiC半导体单晶的制造方法，并提供由其制造的p-SiC半导体单晶。解决方案：通过溶液法制备p-SiC半导体单晶的方法，该溶液法是通过将C溶解在Si熔体中形成的溶液在SiC单晶衬底上生长p-SiC半导体单晶的方法其中，以满足以下关系的量进一步添加上述溶液Al和N的溶液：使用添加的Al量>添加量。作为杂质1×10 3 Al和2×10 18 至7×10 SP的p-SiC半导体单晶 > 18 cm -3 N。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2010208926A METHOD FOR PRODUCING SiC SINGLE CRYSTAL 有权
标题翻译：生产SiC单晶的方法
公开(公告)号：JP2010208926A
公开(公告)日：2010-09-24
申请号：JP2009059987
申请日：2009-03-12
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： SAKAMOTO HIDEMITSU , OGURO HIRONORI , FUJIWARA YASUYUKI
IPC分类号： C30B29/36 , C30B19/04 , C30B19/10
CPC分类号： C30B29/36 , C30B9/06 , C30B9/10 , C30B15/10 , C30B15/30 , C30B15/305 , C30B15/32 , C30B17/00 , C30B19/04
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a high quality SiC single crystal at a high growth rate, in which an ideal flow of a solution is achieved by finding an ideal ACRT (Accelerated Crucible Rotation Technique) pattern of so called an ACRT, in the production of a SiC single crystal by a solution growth method. SOLUTION: In the method for growing a SiC single crystal on a SiC seed crystal by bringing the SiC seed crystal, fixed to a rotatable seed crystal fixing shaft, into contact with a solution obtained by dissolving carbon into a melt containing silicon in a rotatable crucible, following rotation/stop cycle is repeated; the rotation of the seed crystal fixing shaft is started, and the rotation of the crucible is started after a predetermined delay time (Td); thereafter, the rotations of the seed crystal fixing shaft and the crucible are simultaneously stopped; and thereafter, the seed crystal fixing shaft and the crucible are kept stopped for a predetermined stop time (Ts). Thereby, the agitation of the solution is more enhanced. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种以高生长速度生长高质量SiC单晶的方法，其中通过找到理想的ACRT（加速坩埚旋转技术）图案来实现溶液的理想流动称为ACRT，通过溶液生长法生产SiC单晶。解决方案：在通过将固定在可旋转籽晶固定轴上的SiC籽晶与通过将碳溶解在含硅熔体而得到的溶液的SiC晶种上生长SiC的方法中，重复旋转/停止循环后的可旋转坩埚; 开始晶种固定轴的旋转，并且在预定的延迟时间（Td）之后开始坩埚的旋转。此后，晶种固定轴和坩埚的旋转同时停止; 之后，晶种固定轴和坩埚保持停止预定的停止时间（Ts）。由此，溶液的搅拌得到进一步提高。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009167044A Method for growing silicon carbide single crystal 有权
标题翻译：生产碳化硅单晶的方法
公开(公告)号：JP2009167044A
公开(公告)日：2009-07-30
申请号：JP2008005748
申请日：2008-01-15
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： TERAJIMA YUKIO , FUJIWARA YASUYUKI
IPC分类号： C30B29/36 , C30B11/06
CPC分类号： C30B29/36 , C30B15/00 , C30B17/00 , C30B19/00
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a silicon carbide single crystal in which the growth rate of the silicon carbide single crystal is high in comparison with that in a known solution growth method. SOLUTION: In the method for growing the silicon carbide single crystal, comprising bringing a silicon carbide single crystal substrate into contact with a melt, obtained by heating Si to melt it in a graphite crucible and growing the single crystal on the substrate, the silicon carbide single crystal is grown from a melt, obtained by adding elements of Cr and X (X is at least one or more kinds of elements selected from Sn, In and Ga) into the melt so that the ratio of Cr becomes in a range of 30-70 atom.% and the ratio of X becomes in a range of 1-25 atom.%, based on the elements in the total composition. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供一种生长碳化硅单晶的方法，其中与已知的溶液生长方法相比，碳化硅单晶的生长速率高。解决方案：在用于生长碳化硅单晶的方法中，包括使碳化硅单晶衬底与熔体接触，通过加热Si将其熔化在石墨坩埚中并在衬底上生长单晶而获得，通过将Cr和X的元素（X是选自Sn，In和Ga中的至少一种元素）添加到熔体中而获得的熔融物中生长碳化硅单晶，使得Cr的比例成为范围为30-70原子％，并且X的比例基于总组合物中的元素在1-25原子％的范围内。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2007009238A Thermally treating oil composition 有权
标题翻译：热处理油组合物
公开(公告)号：JP2007009238A
公开(公告)日：2007-01-18
申请号：JP2005188154
申请日：2005-06-28
申请人： Idemitsu Kosan Co Ltd , Toyota Motor Corp , トヨタ自動車株式会社 , 出光興産株式会社
发明人： KOBETSUSHIYO MASAHIRO , ICHITANI KATSUMI , TAKEISHI MAKOTO , FUJIWARA YASUYUKI , AOYAMA YOSHIMI
IPC分类号： C21D1/58 , C10M101/02 , C10M105/04 , C10M105/06 , C10M105/38 , C10M143/00 , C10M143/04 , C10M143/06 , C10M143/08 , C10M145/14 , C10N20/00 , C10N40/20
CPC分类号： C10M171/00 , C10M111/00 , C10M2203/003 , C10M2205/026 , C10M2219/044 , C10N2220/022 , C10N2220/031 , C10N2240/40 , C10N2240/402 , C10N2240/404 , C21D1/58 , C10N2210/02
摘要： PROBLEM TO BE SOLVED: To provide a thermally treating oil composition, in quenching for metallic materials, when a large quantity of works are simultaneously quenched, with which variation in hardness and quenching strain is hard to occur.
SOLUTION: This thermally treating oil composition contains a mixed base oil comprising 5 to 50 to 95 mass% of a high boiling point base oil having a 5% distillation temperature of ≥500°C.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种热处理油组合物，当用于金属材料的淬火时，当大量的工件同时淬火时，难以发生硬度和淬火应变的变化。解决方案：该热处理油组合物含有5〜50质量％的具有5％蒸馏温度的低沸点基础油和50〜95质量％的高沸点基础油的混合基础油，其具有 5％蒸馏温度≥500°C。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2013091581A Lithium composite oxide, manufacturing method for the same, and lithium ion secondary battery 有权
标题翻译：锂复合氧化物，其制造方法和锂离子二次电池
公开(公告)号：JP2013091581A
公开(公告)日：2013-05-16
申请号：JP2011234118
申请日：2011-10-25
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： TERAJIMA JUNPEI , FUJIWARA YASUYUKI
IPC分类号： C01G53/00 , H01M4/36 , H01M4/485 , H01M4/505 , H01M4/525 , H01M10/052 , H01M10/058
CPC分类号： Y02E60/122 , Y02P70/54 , Y02T10/7011
摘要： PROBLEM TO BE SOLVED: To provide a lithium-rich type lithium composite oxide having a layered rock salt type structure capable of improving capacity retention when charging and discharging are repeated at a high potential of 4.5 V or higher, and its manufacturing method.SOLUTION: The lithium composite oxide includes a layered rock salt type structure expressed by the following formula, the lattice distortion obtained by the Halder Wafner method is 0.4% or less, and the crystallite size is 30 nm or less. The formula is LiMO(In the formula, M is at least one kind of a transition metal whose average valence is 4+, and includes at least one kind selected from the group consisting of Ti, V, Cr, Mn, Fe, Co, Ni and Cu, and 1.2≤x/y
摘要翻译：解决的问题：提供一种在4.5V或更高的高电位下重复充电和放电时能够提高容量保持性的具有层状岩盐型结构的富锂型锂复合氧化物及其制造方法。解决方案：锂复合氧化物包括由下式表示的层状岩盐型结构，通过Halder Wafner法获得的晶格畸变为0.4％以下，微晶尺寸为30nm以下。公式为Li x O 2 （在公式中， M为至少一种平均价为4+的过渡金属，并且包括选自Ti，V，Cr，Mn，Fe，Co，Ni和Cu中的至少一种，1.2≤x/ y <2.0）。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2010189246A METHOD FOR ADHERING SiC SINGLE CRYSTAL AND SOLUTION GROWTH METHOD OF SiC SINGLE CRYSTAL 有权
标题翻译： SiC单晶的SiC单晶和溶液生长方法的研究
公开(公告)号：JP2010189246A
公开(公告)日：2010-09-02
申请号：JP2009038304
申请日：2009-02-20
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： OGURO HIRONORI , SAKAMOTO HIDEMITSU , FUJIWARA YASUYUKI
IPC分类号： C30B29/36 , C04B37/00 , C09J5/00 , C09J11/04 , C09J161/00 , C30B19/00
摘要： PROBLEM TO BE SOLVED: To solve such problems that in crystal growth by a solution growth method, crystal growth proceeds by a heat radiation effect from a seed crystal in the direction of a graphite axis, however, when an insufficient adhesion (where an air layer intrudes) part such as an adhesion defective part or an adhesion peeling part is present, the heat radiation in the axial direction degrades to partially reduce the growth rate, resulting in failure of flat growth in a plane during growth of a single crystal, and that in an insufficient adhesion part such as the adhesion defective part or the adhesion peeling part can be a cause of dropping the seed crystal, and therefore, to achieve uniform and stable adhesion in an adhesive layer.
SOLUTION: A method for adhering an SiC seed crystal to the tip end of a graphite shaft includes a process of growing an SiC single crystal by bringing the SiC seed crystal into contact with an SiC solution, wherein the SiC seed crystal is adhered to the tip of the graphite shaft by using an adhesive containing a thermosetting resin and SiC particles.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题为了解决通过溶液生长法进行的晶体生长的问题，通过晶种在石墨轴方向上的散热效果进行晶体生长，然而，当粘合性不足（其中空气层侵入）部分，例如粘合缺陷部分或粘合剥离部分，轴向热辐射降低部分地降低生长速率，导致在单晶生长期间平面生长失败并且在诸如粘合缺陷部分或粘合剥离部分的不充分的粘合部分中可能是晶种掉落的原因，因此在粘合剂层中实现均匀且稳定的粘附。解决方案：将SiC晶种粘附到石墨轴的末端的方法包括通过使SiC晶种与SiC溶液接触而生长SiC单晶的方法，其中SiC晶种被粘附通过使用含有热固性树脂和SiC颗粒的粘合剂到石墨轴的尖端。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2010184838A APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL BY SOLUTION GROWTH TECHNIQUE 有权
标题翻译：通过解决方案生长技术生产SiC单晶的设备
公开(公告)号：JP2010184838A
公开(公告)日：2010-08-26
申请号：JP2009030327
申请日：2009-02-12
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： FUJIWARA YASUYUKI
IPC分类号： C30B29/36 , C30B17/00
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for producing a SiC single crystal, capable of preventing or suppressing production of a polycrystal when producing the SiC single crystal by a solution growth technique.
SOLUTION: In the apparatus 1 for producing the SiC single crystal by the solution growth technique, the SiC single crystal is grown by contacting a seed crystal 9 to a melt 4. The apparatus comprises: a crucible 5 containing the Si-containing melt 4, which is placed inside a growth furnace 2 and is surrounded by a heat insulating material 3; an external heating apparatus 7 containing a high-frequency coil 6 which is placed around the growth furnace 2 so as to heat and keep the melt 4 at a constant temperature; and a vertically movable carbon rod 8. The seed crystal 9 is placed at the tip of the carbon rod 8, and a polycrystal production inhibiting part 10 which has wettability against the melt 4 lower than that of the carbon rod 8 is formed at the lower lateral side of the carbon rod 8.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：待解决的问题：提供一种通过溶液生长技术制备SiC单晶时能够防止或抑制多晶体生产的SiC单晶的制造装置。解决方案：在通过溶液生长技术制造SiC单晶的装置1中，通过使晶种9与熔体4接触来生长SiC单晶。该装置包括：坩埚5，其含有含Si的熔体4，其放置在生长炉2内并被绝热材料3包围; 外部加热装置7包含高频线圈6，该高频线圈6放置在生长炉2周围，以将熔体4加热并保持在恒定温度; 和可垂直移动的碳棒8.将晶种9放置在碳棒8的前端，并且在下部形成具有比碳棒8低的熔融物4的润湿性的多晶体制造抑制部10 碳棒8的侧面。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2009274887A METHOD FOR PRODUCING SiC SINGLE CRYSTAL 审中-公开
标题翻译：生产SiC单晶的方法
公开(公告)号：JP2009274887A
公开(公告)日：2009-11-26
申请号：JP2008125283
申请日：2008-05-12
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： FUJIWARA YASUYUKI
IPC分类号： C30B29/36 , C30B19/00 , C30B30/04
摘要： PROBLEM TO BE SOLVED: To provide a method for producing an SiC single crystal, by which the SiC single crystal is grown stably at high speed by a solution process using an Si-Cr-C solution.
SOLUTION: In a method for growing an SiC single crystal on an SiC seed crystal from an Si-Cr-C solution obtained by dissolving carbon in an Si-Cr melt, a direct current magnetic field is applied to the Si-Cr-C solution. It is preferable that the Si-Cr melt is composed of 30-70 atom% of Cr and the balance Si, and the intensity of the direct current magnetic field is 0.015-0.15 T.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种SiC单晶的制造方法，通过使用Si-Cr-C溶液的溶液法，SiC单晶通过高速稳定地生长。解决方案：在通过将碳溶解在Si-Cr熔体中获得的Si-Cr-C溶液在SiC晶种上生长SiC单晶的方法中，将直流磁场施加到Si-Cr -C溶液。优选Si-Cr熔体由30-70原子％的Cr和余量Si组成，直流磁场的强度为0.015-0.15T。版权所有（C）2010，JPO＆INPIT

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