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1. 发明专利

JP2004214305A Semiconductor device and manufacturing method thereof 有权
公开(公告)号：JP2004214305A
公开(公告)日：2004-07-29
申请号：JP2002380090
申请日：2002-12-27
申请人： Toshiba Corp , Toshiba Nanoanalysis Corp , 東芝ナノアナリシス株式会社 , 株式会社東芝
发明人： NAGAMINE MAKOTO , MITANI YUICHIRO , MORI SHINJI , SATO MUNEHARU
IPC分类号： H01L21/316 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device along with its manufacturing method, where the electric characteristics of an insulating film such as a gate oxide film is improved by introducing deuterium atoms of high binding energy into a film at high concentration.
SOLUTION: The method of manufacturing the semiconductor device includes a process for oxidizing the surface of a semiconductor in an oxidizing atmosphere. The oxidizing atmosphere contains the gas molecule composed of deuterium atoms, the gas molecule containing deuterium atoms and oxygen atoms, and the gas molecule containing oxygen atoms. The concentration of the gas molecule composed of the deuterium atoms is 0.01 molecule % or higher against the gas molecule containing the deuterium atoms and oxygen atoms.
COPYRIGHT: (C)2004,JPO&NCIPI

2. 发明专利

JP2009194393A Manufacturing method of reluctance element 有权
标题翻译：制动元件的制造方法
公开(公告)号：JP2009194393A
公开(公告)日：2009-08-27
申请号：JP2009107971
申请日：2009-04-27
申请人： Toshiba Corp , 株式会社東芝
发明人： UEDA TOMOMASA , AIKAWA HISANORI , YOSHIKAWA MASATOSHI , SHIMOMURA NAOHARU , NAKAYAMA MASAHIKO , IKEGAWA SUMIO , HOSOYA KEIJI , NAGAMINE MAKOTO
IPC分类号： H01L43/12 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To make it possible to manufacture a reluctance element capable of reducing an inversion current when magnetization is inverted in a simple process.
SOLUTION: The manufacturing method comprises the steps of forming a bottom electrode film on a substrate, forming a laminated film having a laminated structure of a first magnetic layer the magnetization direction of which provides an adhered magnetization adhered layer, a tunnel barrier layer and a second magnetic layer the magnetization direction of which provides a variable magnetization free layer on the bottom electrode film, forming a first top electrode film on the laminated film, patterning the first top electrode film to form a first top electrode, patterning the first top electrode to the second magnetic layer of the laminated layer as a mask, forming an insulating film so as to cover the first top electrode, exposing the top face of the first top electrode, forming a second top electrode film so as to cover the first top electrode, patterning the second top electrode film to form a second top electrode, and processing the second top electrode to the bottom electrode film as a mask with self-alignment.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了使得可以在简单的过程中制造当磁化反转时能够降低反转电流的磁阻元件。解决方案：制造方法包括以下步骤：在基板上形成底电极膜，形成具有层叠结构的叠层膜，该叠层结构具有其磁化方向提供粘附的磁化粘附层的第一磁性层，隧道势垒层以及第二磁性层，其磁化方向在底部电极膜上提供可变的磁化自由层，在层叠膜上形成第一顶部电极膜，图案化第一顶部电极膜以形成第一顶部电极，使第一顶部电极到层叠层的第二磁性层作为掩模，形成绝缘膜以覆盖第一顶部电极，暴露第一顶部电极的顶面，形成第二顶部电极膜以覆盖第一顶部电极，图案化第二顶部电极膜以形成第二顶部电极，以及将第二顶部电极处理到底部电极膜作为具有自我对准的面具。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2003078132A Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2003078132A
公开(公告)日：2003-03-14
申请号：JP2001264518
申请日：2001-08-31
申请人： Toshiba Corp , 株式会社東芝
发明人： YASUDA NAOKI , SATAKE HIDEKI , NAGAMINE MAKOTO , MURAOKA KOICHI
IPC分类号： H01L29/78 , H01L21/31 , H01L21/316 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing such a semiconductor device that is provided with a gate insulation film using an SiON base insulation film with small EOT and superior boundary characteristic.
SOLUTION: An SiON film is used as a base insulation film for plasma nitrization. The base SiON film is formed through thermal oxidization/nitrization of a Si substrate or deposition of an oxidized/nitided film on the Si substrate, and then oxidization step (plasma oxidization or O
2 oxidization) is followed by plasma nitirization. Thus, superior boundary characteristic with EOT of 1.3 nm or less and greatly reduced leak current can be realized.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种制造这种半导体器件的方法，该半导体器件使用具有小的EOT和优异的边界特性的SiON基底绝缘膜设置有栅极绝缘膜。解决方案：使用SiON膜作为等离子体氮化的基础绝缘膜。通过Si衬底的热氧化/氮化或Si衬底上的氧化/氮化膜的沉积形成基底SiON膜，然后进行氧化步骤（等离子体氧化或氧化氧化）等离子体氮化。因此，可以实现具有1.3nm以下的EOT的优异的边界特性，并且可以大大降低漏电流。

4. 发明专利

JP2011071352A Magnetoresistive element and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2011071352A
公开(公告)日：2011-04-07
申请号：JP2009221569
申请日：2009-09-25
申请人： National Institute Of Advanced Industrial Science & Technology , Toshiba Corp , 株式会社東芝 , 独立行政法人産業技術総合研究所
发明人： KAI TADASHI , NISHIYAMA KATSUYA , NAGASE TOSHIHIKO , YOSHIKAWA MASAHISA , KITAGAWA EIJI , DAIBO TATATOMI , NAGAMINE MAKOTO , NAKAYAMA MASAHIKO , SHIMOMURA NAOHARU , YODA HIROAKI , YAKUSHIJI HIROSHI , YUASA SHINJI , KUBOTA HITOSHI , NAGAHAMA TARO , FUKUSHIMA AKIO , ANDO KOJI
IPC分类号： H01L43/08 , G11C11/15 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , Y10S977/935
摘要： PROBLEM TO BE SOLVED: To provide a spin-transfer-torque writing type magnetoresistive element with thermal stability and low current consumption. SOLUTION: The magnetoresistive element includes a first magnetic layer 3 which has an easy axis of magnetization in a direction vertical to a film surface and has variable magnetization direction, a second magnetic layer 2 which has an easy axis of magnetization in the direction vertical to the film surface, and a first nonmagnetic layer 4 provided between the first magnetic layer 3 and second magnetic layer 2. The first magnetic layer 3 is made of a ferromagnetic material which includes a CoPd alloy or CoPt alloy having Co and Pd or Co and Pt laminated alternately on an atomically close-packed plane thereof, and has a (c) axis in the direction vertical to the film surface. The magnetization direction of the first magnetic layer 3 varies with a bidirectional current penetrating the first magnetic layer 3, first nonmagnetic layer 4 and second magnetic layer 2. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供具有热稳定性和低电流消耗的自旋转矩扭矩书写型磁阻元件。解决方案：磁阻元件包括第一磁性层3，其在垂直于膜表面的方向上具有易磁化轴并且具有可变的磁化方向;第二磁性层2，其在方向上具有易磁化轴设置在第一磁性层3和第二磁性层2之间的第一非磁性层4.第一磁性层3由包含Co和Pd或Co的CoPd合金或CoPt合金的铁磁材料制成并且Pt在其原子紧密堆积的平面上交替层压，并且在垂直于膜表面的方向上具有（c）轴。第一磁性层3的磁化方向随着穿过第一磁性层3，第一非磁性层4和第二磁性层2的双向电流而变化。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2007005555A Magnetoresistive-effect element and magnetic random-access memory 有权
标题翻译：磁感应元件和磁性随机存取存储器
公开(公告)号：JP2007005555A
公开(公告)日：2007-01-11
申请号：JP2005183718
申请日：2005-06-23
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGAMINE MAKOTO , NAGASE TOSHIHIKO , IKEGAWA SUMIO , NISHIYAMA KATSUYA , YOSHIKAWA MASAHISA
IPC分类号： H01L43/08 , G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/10
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , H01L27/224 , H01L27/228
摘要： PROBLEM TO BE SOLVED: To propose a magnetoresistive-effect element capable of making an improvement in a heat resistance and the improvement in an MR ratio compatible. SOLUTION: The magnetoresistive-effect element has a first surface and a second surface, and has a first magnetic layer 113 having a first standard-electrode potential V, a second magnetic layer 111, and a barrier layer 112 formed between the first surface of the first magnetic layer 113 and the second magnetic layer 111. The magnetoresistive-effect element further has a cap layer 114 brought into contact with the second surface of the first magnetic layer 113 formed of the alloy of a first metallic material M1 having a second standard-electrode potential V1 lower than the first standard-electrode potential V, and a second metallic material M2 having a third standard-electrode potential V2 higher than the first standard-electrode potential V and composed of a non-magnetic material. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提出能够提高耐热性和改善MR比的兼容性的磁阻效应元件。解决方案：磁阻效应元件具有第一表面和第二表面，并且具有第一磁性层113，其具有第一标准电极电位V，第二磁性层111和形成在第一和第二表面之间的阻挡层112 第一磁性层113和第二磁性层111的表面。磁阻效应元件还具有与第一金属材料M1的合金形成的第一磁性层113的第二表面接触的盖层114，第一金属材料M1具有第二标准电极电位V1低于第一标准电极电位V，第二金属材料M2具有比第一标准电极电位V高的第三标准电极电位V2并由非磁性材料构成。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2004119899A Manufacturing method for semiconductor device, and semiconductor device 审中-公开
公开(公告)号：JP2004119899A
公开(公告)日：2004-04-15
申请号：JP2002284496
申请日：2002-09-27
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGAMINE MAKOTO , SATAKE HIDEKI , SHIMIZU TAKASHI , SUDO HIROYUKI , SEKINE KATSUYUKI
IPC分类号： H01L21/318 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To form a silicon oxynitride film having high permittivity and a reduced interface level and/or fixed charge wherein an increase in film thickness is suppressed when a high dielectric film is formed on the surface.
SOLUTION: In a nitriding process for a silicon oxide film using nitrogen radical, the temperature T of a substrate in a nitriding atmosphere is made to give D=D
0 ×exp(-ΔE/RT) satisfying D≤Tox
2 /t, where D denotes the diffusion coefficient of the nitrogen radical in the oxide film, Tox denotes the thickness of the oxide film, t denotes a nitriding time, D
0 denotes the pre-exponential factor of the diffusion coefficient, ΔE denotes activation energy for the diffusion coefficient, and R denotes a gas constant.
COPYRIGHT: (C)2004,JPO

7. 发明专利

JP2014135449A Magnetoresistance effect element and method of manufacturing the same 审中-公开
标题翻译：磁阻效应元件及其制造方法
公开(公告)号：JP2014135449A
公开(公告)日：2014-07-24
申请号：JP2013003838
申请日：2013-01-11
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGAMINE MAKOTO , IKENO DAISUKE , UEDA KOJI , NISHIYAMA KATSUYA , NATORI KATSUAKI , YAMAKAWA KOJI
IPC分类号： H01L43/10 , G11B5/39 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To obtain a magnetoresistance effect element having a high MR ratio.SOLUTION: The magnetoresistance effect element of the present embodiment includes: a first magnetic layer; a tunnel barrier layer formed on the first magnetic layer; a second magnetic layer formed on the tunnel barrier layer; an insulating layer being in contact with an end of the first magnetic layer or the second magnetic layer; and a boron adsorbing layer being in contact with either an upper surface of the first magnetic layer or a lower surface of the second magnetic layer. The concentration of boron is lower at the end of the first magnetic layer or the second magnetic layer than at the center thereof. The insulating layer contains a metal selected from C, N, Mg, Al, Ti, V, Cr, Mn, Co, Ni, Fe, Zr, Mo, Nb, La, Ce, Hf, Ta, and W.
摘要翻译：要解决的问题：获得具有高MR比的磁阻效应元件。解决方案：本实施例的磁阻效应元件包括：第一磁性层; 形成在所述第一磁性层上的隧道势垒层; 形成在隧道势垒层上的第二磁性层; 绝缘层与所述第一磁性层或所述第二磁性层的端部接触; 以及与第一磁性层的上表面或第二磁性层的下表面接触的硼吸附层。在第一磁性层或第二磁性层的末端，硼的浓度比在其中心低。绝缘层包含选自C，N，Mg，Al，Ti，V，Cr，Mn，Co，Ni，Fe，Zr，Mo，Nb，La，Ce，Hf，Ta和W.

8. 发明专利

JP2012064776A Magnetoresistive element and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2012064776A
公开(公告)日：2012-03-29
申请号：JP2010208058
申请日：2010-09-16
申请人： Toshiba Corp , 株式会社東芝
发明人： DAIBO TADAOMI , KITAGAWA EIJI , HASHIMOTO YUTAKA , JIA DA DOU , NAGASE TOSHIHIKO , NISHIYAMA KATSUYA , UEDA KOJI , NAGAMINE MAKOTO , KAI TADASHI , YODA HIROAKI
IPC分类号： H01L27/105 , G11B5/39 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： H01L43/08 , H01L27/228 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element which has perpendicular magnetic anisotropy and is capable of developing a larger magnetoresistive effect.SOLUTION: A magnetoresistive element includes: a first ferromagnetic layer 2 having an axis of easy magnetization in a direction perpendicular to a film surface; a second ferromagnetic layer 10 having an axis of easy magnetization in a direction perpendicular to the film surface; a non-magnetic layer 6 provided between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer 4 provided between the first ferromagnetic layer and the non-magnetic layer; and a second interfacial magnetic layer 8 provided between the second ferromagnetic layer and the non-magnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film 4a provided on the first ferromagnetic layer side, a second interfacial magnetic film 4c provided on the non-magnetic layer side and having a composition different from the first interfacial magnetic film, and a first non-magnetic film 4b provided between the first interfacial magnetic film and the second interfacial magnetic film. By applying a current flow through the non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer, the magnetization direction of one of the first ferromagnetic layer and the second ferromagnetic layer is made variable.
摘要翻译：要解决的问题：提供具有垂直磁各向异性并且能够产生更大磁阻效应的磁阻效应元件。解决方案：磁阻元件包括：在垂直于膜表面的方向上具有容易磁化的轴的第一铁磁层2; 第二铁磁层10在垂直于膜表面的方向上具有容易磁化的轴线; 设置在第一铁磁层和第二铁磁层之间的非磁性层6; 设置在第一铁磁层和非磁性层之间的第一界面磁性层4; 以及设置在第二铁磁层和非磁性层之间的第二界面磁性层8。第一界面磁性层包括设置在第一铁磁性层侧的第一界面磁性膜4a，设置在非磁性层一侧且具有与第一界面磁性膜不同的组成的第二界面磁性膜4c， - 磁膜4b，设置在第一界面磁性膜和第二界面磁性膜之间。通过施加电流流过第一铁磁层和第二铁磁层之间的非磁性层，第一铁磁层和第二铁磁层之一的磁化方向是可变的。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2009239120A Magnetoresistive element, and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2009239120A
公开(公告)日：2009-10-15
申请号：JP2008084938
申请日：2008-03-27
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , YOSHIKAWA MASAHISA , NAGASE TOSHIHIKO , DAIBO TATATOMI , NAGAMINE MAKOTO , NISHIYAMA KATSUYA , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , G11C11/15 , H01F10/16 , H01F10/26 , H01L21/8246 , H01L27/105 , H01L43/10
CPC分类号： H01L43/08 , G11C11/161 , H01L27/222
摘要： PROBLEM TO BE SOLVED: To reduce variations in inversion current density upon magnetic reversal.
SOLUTION: A magnetoresistive element 10 includes an underlying layer 12 having a cubic or tetragonal crystal structure oriented in a (001) plane, a recording layer 13 provided on the underlying layer 12, having magnetic anisotropy perpendicular to a film surface, and having an fct (face-centered tetragonal) structure oriented in a (001) plane, a non-magnetic layer 14 provided on the recording layer 13, and a reference layer 15 provided on the non-magnetic layer 14, and having magnetic anisotropy perpendicular to the film surface. An in-plane lattice constant a1 of the underlying layer 12 and the in-plane lattice constant a2 of the recording layer 13 satisfy the following relation of |√2×a1/2-a2|/a2
摘要翻译：要解决的问题：为了减少反转电流密度的变化。解决方案：磁阻元件10包括具有在（001）面取向的立方或四方晶体结构的下层12，设置在下层12上的具有垂直于膜表面的磁各向异性的记录层13，以及具有在（001）面取向的fct（面心四边形）结构，设置在记录层13上的非磁性层14和设置在非磁性层14上的参考层15，具有垂直于磁性的各向异性到电影表面。下层12的面内晶格常数a1和记录层13的面内晶格常数a2满足¾√2×a1 / 2-a2¾/ a2

10. 发明专利

JP2009239052A Magnetoresistance element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆
公开(公告)号：JP2009239052A
公开(公告)日：2009-10-15
申请号：JP2008083760
申请日：2008-03-27
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , YOSHIKAWA MASATOSHI , DAIBO TADAOMI , NAGAMINE MAKOTO , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistance element which has a high MR ratio even when a layer containing Pd is provided, and a magnetic memory. SOLUTION: The magnetoresistance element includes: a first magnetic layer 11c which has magnetism in a direction perpendicular to a film surface and is made of metal having an fct type crystal structure oriented along a (001) plane with respect to the film surface and containing at least one or more elements among Pd, Fe, Co, Ni, and Mn; a second magnetic layer 11b provided on the first magnetic layer and having magnetism in a direction perpendicular to the film surface, and made of metal containing at least one or more elements among Fe, N, C, O, Y, and Be; a third magnetic layer 11a provided on the second magnetic layer and having magnetism in the direction perpendicular to the film surface, and made of metal containing one or more elements among Fe, Co, and Ni; a nonmagnetic layer 13 provided on the third magnetic layer; and a fourth magnetic layer 12 provided on the nonmagnetic layer and having magnetism in the direction perpendicular to the film surface. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供即使当设置含有Pd的层时也具有高MR比的磁阻元件和磁存储器。解决方案：磁阻元件包括：第一磁性层11c，其在垂直于膜表面的方向上具有磁性，并且由具有相对于膜表面的（001）面取向的fct型晶体结构的金属制成并含有Pd，Fe，Co，Ni和Mn中的至少一种以上元素; 第二磁性层11b，其设置在第一磁性层上，并且在与膜表面垂直的方向上具有磁性，并由Fe，N，C，O，Y和Be中的至少一种以上的元素构成; 第三磁性层11a设置在第二磁性层上，并且在垂直于膜表面的方向上具有磁性，并且由含有Fe，Co和Ni中的一种或多种元素的金属构成; 设置在第三磁性层上的非磁性层13; 以及设置在非磁性层上并且在垂直于膜表面的方向上具有磁性的第四磁性层12。版权所有（C）2010，JPO＆INPIT

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