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1. 发明专利

JP2015036883A 自動改札機有权
标题翻译：自动售票机
公开(公告)号：JP2015036883A
公开(公告)日：2015-02-23
申请号：JP2013168180
申请日：2013-08-13
申请人：株式会社東芝 , Toshiba Corp
发明人： SUDO HIROYUKI , MANABE KAZUHISA
IPC分类号： G07B15/00
摘要：【課題】運用中には検知し難いセンサの故障を検出できる自動改札機を提供する。【解決手段】実施形態によれば、自動改札機は、センサと、判定手段と、故障検知手段とを有する。センサは、通路内の検知位置における人物の有無に応じて出力信号が変化する。判定手段は、センサの出力信号が人物の検知状態を示す信号か人物の非検知状態を示す信号かを判定する。故障検知手段は、センサの出力信号が人物の非検知状態を示す信号に固定となる故障を検知する。【選択図】図2
摘要翻译：要解决的问题：提供一种能够检测在操作期间几乎不被检测到的传感器的故障的自动检票员。解决方案：自动检票器包括：传感器; 确定手段; 和故障确定装置。传感器根据在通道中的检测位置处的人的存在来改变输出信号。确定装置确定来自传感器的输出信号是否表示人的检测状态或非检测状态。故障确定装置检测到来自传感器的输出信号被固定到表示人的非检测状态的信号的故障。

2. 发明专利

JP2013059725A Paper sheet processor 审中-公开
标题翻译：纸张处理器
公开(公告)号：JP2013059725A
公开(公告)日：2013-04-04
申请号：JP2011199697
申请日：2011-09-13
申请人： Toshiba Corp , 株式会社東芝
发明人： SUDO HIROYUKI
IPC分类号： B07C3/08 , B07C1/04
摘要： PROBLEM TO BE SOLVED: To provide a paper sheet processor that simplifies a structure and reduces the number of part items.SOLUTION: The paper sheet processor includes: an extraction part for extracting a plurality of paper sheets on a conveying path; a reading part for reading information on sorting destinations of the paper sheets from the paper sheets conveyed on the conveying path; a discrimination part for discriminating the sorting destinations of the paper sheets based on the information read by the reading part; a control part for controlling sorting gate parts according to a discrimination result in the discrimination part to sort the paper sheets to the sorting destinations; and a sorting accumulation part having a plurality of lines of pockets in a plurality of stages and pocket sorting gates arranged in the conveying path in front of each pocket, which accumulates the paper sheets sorted by the control part. The pocket sorting gates arranged in the same line of each stage are configured to drive by a common drive part.
摘要翻译：要解决的问题：提供一种简化结构并减少零件的数量的纸张处理器。解决方案：纸张处理器包括：提取部分，用于在传送路径上提取多个纸张; 读取部，用于从在输送路径上传送的纸张中读取关于纸张的目的地分类的信息; 识别部分，用于基于由读取部分读取的信息来区分纸张的分类目的地; 控制部分，用于根据鉴别部分中的判别结果控制分选门部分，以将纸张分类到分类目的地; 以及排列堆积部分，其具有多个阶段中的多个袋状袋和布置在每个袋前面的输送路径中的袋分选门，其积聚由控制部分分类的纸张。布置在每个级的同一行中的口袋分类门被配置为由公共驱动部驱动。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2006269975A Semiconductor device and its manufacturing method 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2006269975A
公开(公告)日：2006-10-05
申请号：JP2005089483
申请日：2005-03-25
申请人： Toshiba Corp , 株式会社東芝
发明人： SUDO HIROYUKI
IPC分类号： H01L29/786 , H01L21/336 , H01L29/78
CPC分类号： H01L29/785 , H01L29/66795 , H01L29/78684
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of decreasing the parasitic resistance of a fin part of a fin FET, and to reduce variations in resistance between a source-channel and a drain-channel of the fin FET.
SOLUTION: The semiconductor device comprises a plurality of fins 103 disposed in parallel on an embedded insulating film 102 of a silicon substrate 101, gate electrodes 104 provided on both sides of the central part of the fin 103 through a gate insulating film, and semiconductor layers 106 crystal-grown on the upper and the side surfaces of the fin 103 lying on both sides of the gate electrode 104 and connecting the adjacent fins 103. The fins 103 and the semiconductor layer 106 on both sides of the gate electrode 104 are doped by impurities to form a source/drain layer 107.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够降低翅片FET的翅片部分的寄生电阻并减少鳍式FET的源极沟道和漏极沟道之间的电阻变化的半导体器件。解决方案：半导体器件包括平行设置在硅衬底101的嵌入绝缘膜102上的多个鳍103，通过栅极绝缘膜设置在鳍103的中心部分的两侧的栅电极104，以及半导体层106，其在位于栅极电极104的两侧的翅片103的上表面和侧表面上晶体生长并连接相邻的散热片103.在栅电极104两侧的翅片103和半导体层106 被杂质掺杂以形成源极/漏极层107.（C）2007，JPO和INPIT

4. 发明专利

JP2004119899A Manufacturing method for semiconductor device, and semiconductor device 审中-公开
公开(公告)号：JP2004119899A
公开(公告)日：2004-04-15
申请号：JP2002284496
申请日：2002-09-27
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGAMINE MAKOTO , SATAKE HIDEKI , SHIMIZU TAKASHI , SUDO HIROYUKI , SEKINE KATSUYUKI
IPC分类号： H01L21/318 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To form a silicon oxynitride film having high permittivity and a reduced interface level and/or fixed charge wherein an increase in film thickness is suppressed when a high dielectric film is formed on the surface.
SOLUTION: In a nitriding process for a silicon oxide film using nitrogen radical, the temperature T of a substrate in a nitriding atmosphere is made to give D=D
0 ×exp(-ΔE/RT) satisfying D≤Tox
2 /t, where D denotes the diffusion coefficient of the nitrogen radical in the oxide film, Tox denotes the thickness of the oxide film, t denotes a nitriding time, D
0 denotes the pre-exponential factor of the diffusion coefficient, ΔE denotes activation energy for the diffusion coefficient, and R denotes a gas constant.
COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2014178771A Automatic ticket examination machine and station service apparatus 审中-公开
标题翻译：自动检票机和车站服务设备
公开(公告)号：JP2014178771A
公开(公告)日：2014-09-25
申请号：JP2013050919
申请日：2013-03-13
申请人： Toshiba Corp , 株式会社東芝
发明人： SUDO HIROYUKI
IPC分类号： G07B15/00
摘要： PROBLEM TO BE SOLVED: To provide an automatic ticket examination machine and a station service apparatus which display a guidance responding to a user.SOLUTION: The automatic ticket examination machine has reading means, determination means and passage control means, generation means, and display means. The reading means reads information from a recording medium presented by a user. The determination means determines whether a passage of the user is accepted from the information read by the reading means. The passage control means controls the passage of the user according to a result of the determination by the determination means. The generation means generates a guidance image to be presented to the user according to personal information read from the recording medium by the reading means. The display means displays the guidance image generated by the generation means.
摘要翻译：要解决的问题：提供自动检票机和站服务装置，其显示对用户的指导。解决方案：自动检票机具有读取装置，确定装置和通过控制装置，产生装置和显示装置。读取装置从用户呈现的记录介质读取信息。确定装置确定从读取装置读取的信息中是否接受了用户的通过。通过控制装置根据确定装置的确定结果控制用户的通过。生成装置根据通过读取装置从记录介质读取的个人信息生成要呈现给用户的引导图像。显示装置显示由生成装置生成的引导图像。

6. 发明专利

JP2014060575A Network system and slave unit recognizing method in network system 有权
标题翻译：网络系统和从机组识别网络系统的方法
公开(公告)号：JP2014060575A
公开(公告)日：2014-04-03
申请号：JP2012204186
申请日：2012-09-18
申请人： Toshiba Corp , 株式会社東芝
发明人： SUDO HIROYUKI
IPC分类号： H04L12/28
摘要： PROBLEM TO BE SOLVED: To provide a network system and a slave unit recognizing method that can recognize a device configuration even during operation.SOLUTION: A network system performs daisy-chain connection of a master unit and a plurality of slave units by a serial communication line. The slave units write a slave connection confirmation bit the value of which is made to indicate a state, in which the slave unit is connected, into data to be transmitted toward the master unit over the serial communication line, and transmit the data toward the master unit by the serial communication line. The master unit receives the data transmitted by the serial communication line, and on the basis of the slave connection confirmation bit indicating the connection state of the slave unit included in the received data, determines whether the slave unit is connected with the network system or not.
摘要翻译：要解决的问题：提供即使在运行期间也能够识别设备配置的网络系统和从单元识别方法。解决方案：网络系统通过串行通信执行主单元和多个从单元的菊花链连接线。从单元写入一个从属连接确认位，其值用于指示从属单元连接的状态，以通过串行通信线路向主单元发送的数据，并将数据发送到主站单元由串行通信线路。主单元接收串行通信线路发送的数据，并且根据表示接收到的数据中包含的从单元的连接状态的从属连接确认位，判断从单元是否与网络系统连接。

7. 发明专利

JP2013192012A Network system, and method for setting identification information in network system 审中-公开
标题翻译：网络系统和网络系统中设置识别信息的方法
公开(公告)号：JP2013192012A
公开(公告)日：2013-09-26
申请号：JP2012056451
申请日：2012-03-13
申请人： Toshiba Corp , 株式会社東芝
发明人： SUDO HIROYUKI
IPC分类号： H04L12/28 , H04L12/40
摘要： PROBLEM TO BE SOLVED: To provide a network system in which each slave can automatically set an ID of the slave in performing communication setting.SOLUTION: A network system according to an embodiment comprises a master and a plurality of slaves. The master comprises first communication means and voltage supply means. Each of the slaves comprises second communication means, a resistance, measurement means, and determination means. The first communication means performs serial communication with the plurality of slaves. The voltage supply means supplies voltage to an electric wire connecting the plurality of slaves in series, in order to make each slave determine identification information. The second communication means performs serial communication with the master and another slave. The resistance is connected in series to a resistance of the another slave by the electric wire. The measurement means measures a divided voltage value as a value of voltage applied to the resistance and a value of voltage of the preceding stage of the resistance. The determination means determines identification information of the slave on the basis of the value of voltage of the preceding stage of the resistance and the divided voltage value which are measured by the measurement means, and a value of voltage supplied to the electric wire by the voltage supply means.
摘要翻译：要解决的问题：提供一种网络系统，其中每个从设备可以在执行通信设置中自动设置从设备的ID。解决方案：根据实施例的网络系统包括主站和多个从站。主机包括第一通信装置和电压提供装置。每个从站包括第二通信装置，电阻，测量装置和确定装置。第一通信装置执行与多个从站的串行通信。电压供给装置向连接多个从动装置的电线串联供给电压，以使每个从动装置确定识别信息。第二通信装置与主机和另一从机进行串行通信。电阻通过电线串联连接到另一个从机的电阻。测量装置测量作为施加到电阻的电压的值的分压电压值和电阻的前一级的电压值。确定装置基于电阻的前一级的电压值和由测量装置测量的分压电压值以及通过电压提供给电线的电压值来确定从属装置的识别信息供应手段

8. 发明专利

JP2012100517A Backup power supply device and computer system 审中-公开
标题翻译：备用电源设备和计算机系统
公开(公告)号：JP2012100517A
公开(公告)日：2012-05-24
申请号：JP2011076424
申请日：2011-03-30
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAJIMA MASATOSHI , KATO YASUHIRO , SUDO HIROYUKI , TSUNODA HIROYUKI , NAGAOKA ISAJI
IPC分类号： H02J9/06 , H02J7/34 , H02M3/00
摘要： PROBLEM TO BE SOLVED: To provide a backup power supply device and a computer system capable of surely performing a backup even under an environment where an input voltage frequently drops.SOLUTION: The backup power supply device comprises: a battery unit 2 using an electric double layer capacitor as backup means; a charge control unit 1 for charging the battery unit; a power supply switching unit 3 for outputting power supply output from either a DC power supply 110 or the battery unit 2 to a load side; a DC-DC converter unit 4 for converting an output voltage from the power supply switching unit 3 to a voltage of the load side; switching means (FET) 51 for switching on/off power supply output from the DC-DC converter unit 4; and an output control unit 5 for performing on/off control of the switching means 51. The charge control unit 1 quickly charges the electric double layer capacitor. When a voltage of the electric double layer capacitor is fully charged, the output control unit switches on the switching means in response to a full-charge signal caused by this and supplies power to the load.
摘要翻译：要解决的问题：提供即使在输入电压频繁下降的环境下也能够可靠地执行备份的备用电源装置和计算机系统。解决方案：备用电源装置包括：使用双电层电容器的电池单元2作为备用装置; 用于对电池单元充电的充电控制单元1; 电源切换单元3，用于输出从直流电源110或电池单元2输出到负载侧的电源; 用于将来自电源切换单元3的输出电压转换为负载侧的电压的DC-DC转换器单元4; 用于从DC-DC转换器单元4输出的用于接通/断开电源的开关装置（FET）51; 以及用于执行开关装置51的开/关控制的输出控制单元5.充电控制单元1快速地对双电层电容器充电。当双电层电容器的电压完全充电时，输出控制单元响应于由此引起的全电荷信号而接通开关装置，并向负载供电。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2002203969A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2002203969A
公开(公告)日：2002-07-19
申请号：JP2000400825
申请日：2000-12-28
申请人： TOSHIBA CORP
发明人： SUDO HIROYUKI
IPC分类号： H01L29/423 , H01L21/8234 , H01L21/8238 , H01L21/8242 , H01L27/088 , H01L27/092 , H01L27/108 , H01L29/41 , H01L29/78 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device where the freedom in the structure of a gate electrode or a channel part increases by making the gate electrode which specifies the channel region of a MISFIT into a new structure which enables in its turn the reduction of the surface area of the board occupied by single MISFIT, or the increase of the drain current of the MISFIT, and the control of a multivalent digital signal with a single MISFIT. SOLUTION: This semiconductor device possesses the gate electrode G of a MOSFET whose one part at least is buried in the semiconductor substrate 300, a gate insulating film 308 which covers the surface of the gate electrode within the semiconductor substrate, the channel regions 306 of the MOSFET which are made in contact with the gate insulating film within the semiconductor substrate and lie along both flanks of the gate electrode within the semiconductor substrate, and the source region S and the drain region D of the MOSFET which range from the channel region.

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