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    • 1. 发明专利
    • Semiconductor device and method of manufacturing same
    • 半导体器件及其制造方法
    • JP2007266147A
    • 2007-10-11
    • JP2006086725
    • 2006-03-27
    • Toshiba Corp株式会社東芝
    • KIKUCHI TAKUOFUKUMIZU HIROYUKI
    • H01L21/768H01L21/28
    • PROBLEM TO BE SOLVED: To provide a semiconductor device having a contact via which has a good embeddability and a high aspect ratio, and to provide its manufacturing method.
      SOLUTION: The semiconductor device comprises a semiconductor layer, a first insulating layer which is formed on the semiconductor layer and has a first contact via electrically connected to the semiconductor layer, and a second insulating layer which is formed on the first insulating layer and has a second contact via. The first and second contact vias are electrically connected near the bottom face of a trench formed in a direction from the first insulation layer to the semiconductor layer.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供具有良好的嵌入性和高纵横比的接触通孔的半导体器件,并提供其制造方法。 解决方案:半导体器件包括半导体层,形成在半导体层上并具有电连接到半导体层的第一接触通孔的第一绝缘层和形成在第一绝缘层上的第二绝缘层 并具有第二接触通孔。 第一和第二接触通孔在从第一绝缘层到半导体层的方向形成的沟槽的底面附近电连接。 版权所有(C)2008,JPO&INPIT
    • 4. 发明专利
    • Semiconductor device
    • 半导体器件
    • JP2014067760A
    • 2014-04-17
    • JP2012210188
    • 2012-09-24
    • Toshiba Corp株式会社東芝
    • TAKAO KAZUTOKONO HIROSHIKIKUCHI TAKUO
    • H01L25/18H01L25/07H02M1/00H02M7/48
    • G05F3/20H01L2224/49113H01L2224/49175H01L2224/73265H01L2924/1305H01L2924/13055H01L2924/13091H02M7/003H01L2924/00
    • PROBLEM TO BE SOLVED: To reduce a parasitic inductance.SOLUTION: A semiconductor device according to the embodiment includes a substrate, a first circuit part, and a second circuit part. The first circuit part includes a first switching element, a first diode, a second switching element, and a second diode. The second circuit part includes a third switching element, a third diode, a fourth switching element, and a fourth diode. The first switching element is juxtaposed with any one of the second switching element and the third switching element in a first direction along the substrate, and juxtaposed with the fourth switching element in a second direction along the substrate and crossing the first direction. The other of the second switching element and the third switching element, is juxtaposed with the fourth switching element in the first direction, and juxtaposed with any one of the second switching element and the third switching element in the second direction.
    • 要解决的问题:降低寄生电感。根据实施例的半导体器件包括衬底,第一电路部分和第二电路部分。 第一电路部分包括第一开关元件,第一二极管,第二开关元件和第二二极管。 第二电路部分包括第三开关元件,第三二极管,第四开关元件和第四二极管。 第一开关元件沿着基板沿第一方向与第二开关元件和第三开关元件中的任一个并置,并且沿着基板沿第二方向与第四开关元件并置并与第一方向交叉。 第二开关元件和第三开关元件中的另一个在第一方向上与第四开关元件并置,并且与第二开关元件和第三开关元件中的任一个并排放置在第二方向上。
    • 5. 发明专利
    • Bonding member and its manufacturing method
    • 结合会员及其制造方法
    • JP2006073550A
    • 2006-03-16
    • JP2004251270
    • 2004-08-31
    • Toshiba Corp株式会社東芝
    • KIKUCHI TAKUOOYA HIROSHITATEYAMA KAZUKIMIYAGI TAKESHIUKITA YASUNARI
    • H01L21/52B32B15/01
    • H01L24/27H01L24/29H01L24/73H01L24/83H01L2224/32245H01L2224/48247H01L2224/73265H01L2224/83101H01L2224/83192H01L2224/92247H01L2924/01029H01L2924/14H01L2924/00H01L2924/3512H01L2924/00012
    • PROBLEM TO BE SOLVED: To provide a connection material for satisfying requirements of high temperature conductivity, high adhesiveness and an environment harmony type in the connection material for electric and thermal connection.
      SOLUTION: In the connection material, metal particulate which has a surface coated with an organic protection film and whose particle diameter is 1 to 100nm is bonded onto at least one surface of metal foil. In a composite sheet material, a metal material is evaporated by using an evaporation device and it is cooled in organic protection film material steam. Thus, the metal particulate where the organic protection film is formed on the surface is formed, and it is bonded to the surface of metal foil so as to form the material, or dispersion solution containing metal particulate on which the organic protection film is formed in the surface is applied on the surface of metal foil and it is dried so as to obtain the material. The material is suitable as a die mounting material of the semiconductor apparatus.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供用于满足用于电连接和热连接的连接材料中的高温导电性,高粘合性和环境和谐型要求的连接材料。 解决方案:在连接材料中,具有涂覆有机保护膜并且其粒径为1至100nm的表面的金属颗粒结合到金属箔的至少一个表面上。 在复合片材中,通过使用蒸发装置蒸发金属材料,并在有机保护膜材料蒸汽中冷却。 因此,形成表面上形成有机保护膜的金属颗粒,并且其结合到金属箔的表面以形成材料,或者在其上形成有机保护膜的含有金属颗粒的分散溶液 将表面施加在金属箔的表面上并干燥以得到材料。 该材料适合作为半导体装置的管芯安装材料。 版权所有(C)2006,JPO&NCIPI
    • 6. 发明专利
    • Semiconductor light-emitting element
    • 半导体发光元件
    • JP2013191617A
    • 2013-09-26
    • JP2012054701
    • 2012-03-12
    • Toshiba Corp株式会社東芝
    • JANG CHII YANGKIKUCHI TAKUOSUZUKI HIROYUKI
    • H01L33/06H01L33/32
    • PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having a MQW structure that allows reducing the lattice strain of a quantum well and improving luminous efficiency.SOLUTION: The semiconductor light-emitting element includes a light-emitting layer including a quantum well layer provided between a first semiconductor layer and a second semiconductor layer. The light-emitting layer has: a first barrier layer provided between the first semiconductor layer and the quantum well layer; a first intermediate layer provided between the first barrier layer and the quantum well layer and having a lattice spacing wider than that of the first barrier layer and narrower than that of the quantum well layer; a second barrier layer provided between the second semiconductor layer and the quantum well layer; and a second intermediate layer provided between the second barrier layer and the quantum well layer and having a lattice spacing wider than that of the second barrier layer and narrower than that of the quantum well layer.
    • 要解决的问题:提供一种具有MQW结构的半导体发光元件,其允许减小量子阱的晶格应变并提高发光效率。解决方案:半导体发光元件包括包含量子阱的发光层 层,设置在第一半导体层和第二半导体层之间。 发光层具有:设置在第一半导体层与量子阱层之间的第一阻挡层; 第一中间层,设置在所述第一阻挡层和所述量子阱层之间,并且具有比所述第一阻挡层宽的晶格间隔,并且窄于所述量子阱层的晶格间隔; 设置在第二半导体层和量子阱层之间的第二阻挡层; 以及设置在所述第二阻挡层和所述量子阱层之间并且具有比所述第二阻挡层的格子间隔宽的晶格间隔并且窄于所述量子阱层的晶格间隔的第二中间层。
    • 7. 发明专利
    • Semiconductor light-emitting device
    • 半导体发光器件
    • JP2012174851A
    • 2012-09-10
    • JP2011034586
    • 2011-02-21
    • Toshiba Corp株式会社東芝
    • KIKUCHI TAKUOYABUHARA HIDEHIKO
    • H01L33/06H01L33/32
    • H01L33/06H01L33/025H01L33/325
    • PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device which can reduce polarization electric field induced by a quantum well and can improve luminous efficiency.SOLUTION: A semiconductor light-emitting device according to an embodiment comprises: an n-type semiconductor layer; a p-type semiconductor layer; and a light-emitting layer provided between the n-type semiconductor layer and the p-type semiconductor layer and generating light of a wavelength longer than that of a band edge light emission of the n-type semiconductor layer and the p-type semiconductor layer, and including at least one quantum well. A p-type impurity is doped in a first barrier layer nearer to the p-type semiconductor layer, among the first barrier layer and a second barrier layer included in the quantum well adjacent to the p-type semiconductor layer.
    • 要解决的问题:提供一种可以减少由量子阱感应的极化电场并可以提高发光效率的半导体发光器件。 解决方案:根据实施例的半导体发光器件包括:n型半导体层; p型半导体层; 以及设置在n型半导体层和p型半导体层之间并且产生比n型半导体层和p型半导体层的带边发光的波长长的波长的光的发光层 ,并且包括至少一个量子阱。 在与p型半导体层相邻的量子阱中包含的第一阻挡层和第二势垒层中,p型杂质掺杂在更靠近p型半导体层的第一势垒层中。 版权所有(C)2012,JPO&INPIT
    • 8. 发明专利
    • Semiconductor light-emitting element
    • 半导体发光元件
    • JP2012059772A
    • 2012-03-22
    • JP2010199081
    • 2010-09-06
    • Toshiba Corp株式会社東芝
    • KIKUCHI TAKUOYABUHARA HIDEHIKO
    • H01L33/06H01L33/32
    • H01L33/04H01L33/06H01L33/12H01L33/32
    • PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having reduced lattice strain in a quantum well and improved luminous efficiency.SOLUTION: A semiconductor light-emitting element comprises a semiconductor layer 3 of a first conductive type, a light-emitting layer 7, and a semiconductor layer 9 of a second conductive type. The semiconductor layer 3 of a first conductive type has a superlattice structure 5 in which semiconductor sublayers 5a including a first nitride semiconductor and second semiconductor sublayers 5b including a second nitride semiconductor with a larger lattice constant than the first nitride semiconductor are alternately stacked. The light-emitting layer 7 has a multiple quantum well structure in which quantum well sublayers 7b including a third nitride semiconductor with a smaller lattice constant than the second nitride semiconductor and barrier sublayers 7a including a fourth nitride semiconductor with a smaller lattice constant than the third nitride semiconductor are alternately stacked. At least one layer in the quantum well sublayers 7b has the same lattice spacing as the lattice constant of the third nitride semiconductor.
    • 要解决的问题:提供一种在量子阱中具有减小的晶格应变的半导体发光元件并提高发光效率。 解决方案:半导体发光元件包括第一导电类型的半导体层3,发光层7和第二导电类型的半导体层9。 第一导电类型的半导体层3具有超晶格结构5,其中包括第一氮化物半导体的半导体子层5a和包括具有比第一氮化物半导体更大的晶格常数的第二氮化物半导体的第二半导体子层5b交替堆叠。 发光层7具有多量子阱结构,其中包括具有比第二氮化物半导体更小的晶格常数的第三氮化物半导体的量子阱子层7b和包括具有比第三个晶格常数小的晶格常数的第四氮化物半导体的势垒子层7a 氮化物半导体交替堆叠。 量子阱子层7b中的至少一个层具有与第三氮化物半导体的晶格常数相同的晶格间距。 版权所有(C)2012,JPO&INPIT
    • 9. 发明专利
    • Semiconductor light-emitting element
    • 半导体发光元件
    • JP2013069795A
    • 2013-04-18
    • JP2011206425
    • 2011-09-21
    • Toshiba Corp株式会社東芝
    • KIKUCHI TAKUOYABUHARA HIDEHIKOCHANG CHIYANG
    • H01L33/32
    • H01L33/32H01L33/02
    • PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with improved luminous efficiency.SOLUTION: There is provided a semiconductor light-emitting element including an n-type semiconductor layer, a p-type semiconductor layer, a light-emitting layer, and an electron-blocking layer. The light-emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer and contains a nitride semiconductor. The electron-blocking layer is provided between the light-emitting layer and the p-type semiconductor layer and has an aluminum composition ratio increasing toward the p-type semiconductor layer from the light-emitting layer.
    • 要解决的问题:提供具有改善的发光效率的半导体发光元件。 解决方案:提供了包括n型半导体层,p型半导体层,发光层和电子阻挡层的半导体发光元件。 发光层设置在n型半导体层和p型半导体层之间,并含有氮化物半导体。 电子阻挡层设置在发光层和p型半导体层之间,并且铝组分比从发光层向p型半导体层增加。 版权所有(C)2013,JPO&INPIT