专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2013069795A Semiconductor light-emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2013069795A
公开(公告)日：2013-04-18
申请号：JP2011206425
申请日：2011-09-21
申请人： Toshiba Corp , 株式会社東芝
发明人： KIKUCHI TAKUO , YABUHARA HIDEHIKO , CHANG CHIYANG
IPC分类号： H01L33/32
CPC分类号： H01L33/32 , H01L33/02
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with improved luminous efficiency.SOLUTION: There is provided a semiconductor light-emitting element including an n-type semiconductor layer, a p-type semiconductor layer, a light-emitting layer, and an electron-blocking layer. The light-emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer and contains a nitride semiconductor. The electron-blocking layer is provided between the light-emitting layer and the p-type semiconductor layer and has an aluminum composition ratio increasing toward the p-type semiconductor layer from the light-emitting layer.
摘要翻译：要解决的问题：提供具有改善的发光效率的半导体发光元件。解决方案：提供了包括n型半导体层，p型半导体层，发光层和电子阻挡层的半导体发光元件。发光层设置在n型半导体层和p型半导体层之间，并含有氮化物半导体。电子阻挡层设置在发光层和p型半导体层之间，并且铝组分比从发光层向p型半导体层增加。版权所有（C）2013，JPO＆INPIT

IPRDB

热门服务

关于我们

友情链接

联系方式