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1. 发明专利

JP2006083377A Electrically conductive adhesive and method for producing article utilizing the electrically conductive adhesive 有权
标题翻译：电导电粘合剂及使用电导电胶粘剂生产物品的方法
公开(公告)号：JP2006083377A
公开(公告)日：2006-03-30
申请号：JP2005237302
申请日：2005-08-18
申请人： Harima Chem Inc , Toshiba Corp , ハリマ化成株式会社 , 株式会社東芝
发明人： OSAKO TAKEHISA , SHIOI NAOTO , ITO DAISUKE , GOTO HIDEYUKI , MATSUBA YORISHIGE , TATEYAMA KAZUKI , UKITA YASUNARI , SEGAWA MASAO , KIKUCHI TAKUO
IPC分类号： C09J201/00 , C09C1/62 , C09C3/08 , C09J5/00 , C09J9/02 , C09J11/00 , C09J163/00 , H01B1/00 , H01B1/22 , H01L21/52
CPC分类号： H01L24/73 , H01L2224/29 , H01L2224/2919 , H01L2224/29298 , H01L2224/32245 , H01L2224/45 , H01L2224/45015 , H01L2224/45144 , H01L2224/48247 , H01L2224/73265 , H01L2224/83192 , H01L2224/8384 , H01L2224/92247 , H01L2924/00013 , H01L2924/01005 , H01L2924/01029 , H01L2924/0103 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/0665 , H01L2924/10253 , H01L2924/181 , H01L2924/00 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2924/00012 , H01L2924/20752
摘要： PROBLEM TO BE SOLVED: To provide an electrically conductive adhesive capable of solvent dilution for giving good coating workability, capable of preventing a gas from forming, when a binder resin is heated and cured after mounting of parts, and capable of forming an electrically conductive joint excellent in both of thermal conductivity and electrical conductivity. SOLUTION: This electrically conductive adhesive contains an electrically conductive medium, a thermosetting resin as a binder resin component, and a solvent for adjusting a liquid viscosity as essential components, wherein 100 pts.wt. of a silver powder having an average particle diameter of a micrometer size is, for example, used as a main component, together with 1-10 pts.wt. of silver fine particles having an average particle diameter of a nanometer size, in the electrically conductive medium, and further 5-15 pts.wt. of the thermosetting resin and 10 pts.wt. or less of the solvent are together used in the adhesive. The adhesive having a mixing ratio of the components thus selected avoids formation of gas components, when the thermosetting resin is heated/cured, and therefore prevents formation of voids, and further realizes preparation of the electrically conductive joint excellent in the thermal conductivity and the electrical conductivity at the same time. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供能够进行溶剂稀释以提供良好的涂布可加工性的导电粘合剂，能够防止气体形成，当粘合剂树脂在部件安装之后被加热和固化，并且能够形成导电接头在导热性和导电性方面均优异。解决方案：该导电粘合剂包含导电介质，作为粘合剂树脂组分的热固性树脂和用于调节作为必需组分的液体粘度的溶剂，其中100重量份平均粒径为微米尺寸的银粉末，例如以1-10重量份为主成分。的导电介质中平均粒径为纳米尺寸的银微粒，再加入5-15重量份的热固性树脂和10重量份或更少的溶剂一起用于粘合剂中。具有这样选择的组分的混合比例的粘合剂避免形成气体组分，当热固性树脂被加热/固化时，因此防止形成空隙，并且进一步实现导热性和导电性优异的导电接头的制备电导率同时。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2007266147A Semiconductor device and method of manufacturing same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2007266147A
公开(公告)日：2007-10-11
申请号：JP2006086725
申请日：2006-03-27
申请人： Toshiba Corp , 株式会社東芝
发明人： KIKUCHI TAKUO , FUKUMIZU HIROYUKI
IPC分类号： H01L21/768 , H01L21/28
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having a contact via which has a good embeddability and a high aspect ratio, and to provide its manufacturing method.
SOLUTION: The semiconductor device comprises a semiconductor layer, a first insulating layer which is formed on the semiconductor layer and has a first contact via electrically connected to the semiconductor layer, and a second insulating layer which is formed on the first insulating layer and has a second contact via. The first and second contact vias are electrically connected near the bottom face of a trench formed in a direction from the first insulation layer to the semiconductor layer.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供具有良好的嵌入性和高纵横比的接触通孔的半导体器件，并提供其制造方法。解决方案：半导体器件包括半导体层，形成在半导体层上并具有电连接到半导体层的第一接触通孔的第一绝缘层和形成在第一绝缘层上的第二绝缘层并具有第二接触通孔。第一和第二接触通孔在从第一绝缘层到半导体层的方向形成的沟槽的底面附近电连接。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2006059904A Semiconductor device and its manufacturing method 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2006059904A
公开(公告)日：2006-03-02
申请号：JP2004238230
申请日：2004-08-18
申请人： Toshiba Corp , 株式会社東芝
发明人： KIKUCHI TAKUO , SEGAWA MASAO , MIYAGI TAKESHI , TATEYAMA KAZUKI , UKITA YASUNARI
IPC分类号： H01L21/52 , H01L23/36
CPC分类号： H01L24/83 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/75 , H01L2224/04026 , H01L2224/05639 , H01L2224/05644 , H01L2224/29083 , H01L2224/2919 , H01L2224/29309 , H01L2224/29311 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29357 , H01L2224/29364 , H01L2224/29369 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/48095 , H01L2224/48247 , H01L2224/48639 , H01L2224/48644 , H01L2224/73265 , H01L2224/83048 , H01L2224/83101 , H01L2224/83192 , H01L2224/83439 , H01L2224/83444 , H01L2224/8384 , H01L2224/85207 , H01L2224/92247 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/10329 , H01L2924/15747 , H01L2924/181 , H01L2924/20106 , H01L2924/20107 , H01L2924/00012 , H01L2924/00 , H01L2924/00014 , H01L2924/20752 , H01L2924/20108 , H01L2924/3512
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having high heat resistance, high thermal conductivity, and high adhesiveness by employing a lead-free bonding technology.
SOLUTION: In this semiconductor device, a lead frame 16a having a metal layer on the front surface and a semiconductor element 11 having a metal layer on the rear surface are joined by the metal-diffusion bonding of joint interfaces using a die mounting material having a three-layer structure composed of a lead-free metal fine particle layer 15, a metal particles-resin composite material layer or metal foil 14, and a metal fine particle layer 13, thus achieving high thermal conductivity and high adhesiveness.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：通过采用无铅接合技术来提供具有高耐热性，高导热性和高粘附性的半导体器件。解决方案：在该半导体器件中，通过使用管芯安装的接合界面的金属扩散接合，在前表面具有金属层的引线框架16a和在后表面上具有金属层的半导体元件11接合具有由无铅金属细颗粒层15，金属颗粒 - 树脂复合材料层或金属箔14组成的三层结构的材料和金属微粒层13，从而实现高导热性和高粘附性。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2015019110A 半導体装置有权
公开(公告)号：JP2015019110A
公开(公告)日：2015-01-29
申请号：JP2014210064
申请日：2014-10-14
申请人：株式会社東芝 , Toshiba Corp
发明人： TAKAO KAZUTO , KONO HIROSHI , KIKUCHI TAKUO
IPC分类号： H01L25/07 , H01L25/18 , H02M7/48
摘要：【課題】寄生インダンクタンスを低減させる。【解決手段】実施形態の半導体装置は、基板と、第1回路部と、第2回路部と、を含む。第1回路部は、第1スイッチング素子と、第2スイッチング素子と、を有する。第2回路部は、第3スイッチング素子と、第4スイッチング素子と、を有する。第1スイッチング素子は、基板に沿った第1方向に第2スイッチング素子及び第3スイッチング素子のうちいずれか一方と並設されるとともに、基板に沿い第1方向と交差する第2方向に第4スイッチング素子と並設される。第2スイッチング素子及び第3スイッチング素子のうちいずれか他方は、第1方向に第4スイッチング素子と並設されるとともに、第2方向に第2スイッチング素子及び第3スイッチング素子のうちいずれか一方と並設される。【選択図】図1

5. 发明专利

JP2014067760A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2014067760A
公开(公告)日：2014-04-17
申请号：JP2012210188
申请日：2012-09-24
申请人： Toshiba Corp , 株式会社東芝
发明人： TAKAO KAZUTO , KONO HIROSHI , KIKUCHI TAKUO
IPC分类号： H01L25/18 , H01L25/07 , H02M1/00 , H02M7/48
CPC分类号： G05F3/20 , H01L2224/49113 , H01L2224/49175 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H02M7/003 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To reduce a parasitic inductance.SOLUTION: A semiconductor device according to the embodiment includes a substrate, a first circuit part, and a second circuit part. The first circuit part includes a first switching element, a first diode, a second switching element, and a second diode. The second circuit part includes a third switching element, a third diode, a fourth switching element, and a fourth diode. The first switching element is juxtaposed with any one of the second switching element and the third switching element in a first direction along the substrate, and juxtaposed with the fourth switching element in a second direction along the substrate and crossing the first direction. The other of the second switching element and the third switching element, is juxtaposed with the fourth switching element in the first direction, and juxtaposed with any one of the second switching element and the third switching element in the second direction.
摘要翻译：要解决的问题：降低寄生电感。根据实施例的半导体器件包括衬底，第一电路部分和第二电路部分。第一电路部分包括第一开关元件，第一二极管，第二开关元件和第二二极管。第二电路部分包括第三开关元件，第三二极管，第四开关元件和第四二极管。第一开关元件沿着基板沿第一方向与第二开关元件和第三开关元件中的任一个并置，并且沿着基板沿第二方向与第四开关元件并置并与第一方向交叉。第二开关元件和第三开关元件中的另一个在第一方向上与第四开关元件并置，并且与第二开关元件和第三开关元件中的任一个并排放置在第二方向上。

6. 发明专利

JP2006073550A Bonding member and its manufacturing method 审中-公开
标题翻译：结合会员及其制造方法
公开(公告)号：JP2006073550A
公开(公告)日：2006-03-16
申请号：JP2004251270
申请日：2004-08-31
申请人： Toshiba Corp , 株式会社東芝
发明人： KIKUCHI TAKUO , OYA HIROSHI , TATEYAMA KAZUKI , MIYAGI TAKESHI , UKITA YASUNARI
IPC分类号： H01L21/52 , B32B15/01
CPC分类号： H01L24/27 , H01L24/29 , H01L24/73 , H01L24/83 , H01L2224/32245 , H01L2224/48247 , H01L2224/73265 , H01L2224/83101 , H01L2224/83192 , H01L2224/92247 , H01L2924/01029 , H01L2924/14 , H01L2924/00 , H01L2924/3512 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a connection material for satisfying requirements of high temperature conductivity, high adhesiveness and an environment harmony type in the connection material for electric and thermal connection.
SOLUTION: In the connection material, metal particulate which has a surface coated with an organic protection film and whose particle diameter is 1 to 100nm is bonded onto at least one surface of metal foil. In a composite sheet material, a metal material is evaporated by using an evaporation device and it is cooled in organic protection film material steam. Thus, the metal particulate where the organic protection film is formed on the surface is formed, and it is bonded to the surface of metal foil so as to form the material, or dispersion solution containing metal particulate on which the organic protection film is formed in the surface is applied on the surface of metal foil and it is dried so as to obtain the material. The material is suitable as a die mounting material of the semiconductor apparatus.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供用于满足用于电连接和热连接的连接材料中的高温导电性，高粘合性和环境和谐型要求的连接材料。解决方案：在连接材料中，具有涂覆有机保护膜并且其粒径为1至100nm的表面的金属颗粒结合到金属箔的至少一个表面上。在复合片材中，通过使用蒸发装置蒸发金属材料，并在有机保护膜材料蒸汽中冷却。因此，形成表面上形成有机保护膜的金属颗粒，并且其结合到金属箔的表面以形成材料，或者在其上形成有机保护膜的含有金属颗粒的分散溶液将表面施加在金属箔的表面上并干燥以得到材料。该材料适合作为半导体装置的管芯安装材料。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2013191617A Semiconductor light-emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2013191617A
公开(公告)日：2013-09-26
申请号：JP2012054701
申请日：2012-03-12
申请人： Toshiba Corp , 株式会社東芝
发明人： JANG CHII YANG , KIKUCHI TAKUO , SUZUKI HIROYUKI
IPC分类号： H01L33/06 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having a MQW structure that allows reducing the lattice strain of a quantum well and improving luminous efficiency.SOLUTION: The semiconductor light-emitting element includes a light-emitting layer including a quantum well layer provided between a first semiconductor layer and a second semiconductor layer. The light-emitting layer has: a first barrier layer provided between the first semiconductor layer and the quantum well layer; a first intermediate layer provided between the first barrier layer and the quantum well layer and having a lattice spacing wider than that of the first barrier layer and narrower than that of the quantum well layer; a second barrier layer provided between the second semiconductor layer and the quantum well layer; and a second intermediate layer provided between the second barrier layer and the quantum well layer and having a lattice spacing wider than that of the second barrier layer and narrower than that of the quantum well layer.
摘要翻译：要解决的问题：提供一种具有MQW结构的半导体发光元件，其允许减小量子阱的晶格应变并提高发光效率。解决方案：半导体发光元件包括包含量子阱的发光层层，设置在第一半导体层和第二半导体层之间。发光层具有：设置在第一半导体层与量子阱层之间的第一阻挡层; 第一中间层，设置在所述第一阻挡层和所述量子阱层之间，并且具有比所述第一阻挡层宽的晶格间隔，并且窄于所述量子阱层的晶格间隔; 设置在第二半导体层和量子阱层之间的第二阻挡层; 以及设置在所述第二阻挡层和所述量子阱层之间并且具有比所述第二阻挡层的格子间隔宽的晶格间隔并且窄于所述量子阱层的晶格间隔的第二中间层。

8. 发明专利

JP2012174851A Semiconductor light-emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：JP2012174851A
公开(公告)日：2012-09-10
申请号：JP2011034586
申请日：2011-02-21
申请人： Toshiba Corp , 株式会社東芝
发明人： KIKUCHI TAKUO , YABUHARA HIDEHIKO
IPC分类号： H01L33/06 , H01L33/32
CPC分类号： H01L33/06 , H01L33/025 , H01L33/325
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device which can reduce polarization electric field induced by a quantum well and can improve luminous efficiency.SOLUTION: A semiconductor light-emitting device according to an embodiment comprises: an n-type semiconductor layer; a p-type semiconductor layer; and a light-emitting layer provided between the n-type semiconductor layer and the p-type semiconductor layer and generating light of a wavelength longer than that of a band edge light emission of the n-type semiconductor layer and the p-type semiconductor layer, and including at least one quantum well. A p-type impurity is doped in a first barrier layer nearer to the p-type semiconductor layer, among the first barrier layer and a second barrier layer included in the quantum well adjacent to the p-type semiconductor layer.
摘要翻译：要解决的问题：提供一种可以减少由量子阱感应的极化电场并可以提高发光效率的半导体发光器件。解决方案：根据实施例的半导体发光器件包括：n型半导体层; p型半导体层; 以及设置在n型半导体层和p型半导体层之间并且产生比n型半导体层和p型半导体层的带边发光的波长长的波长的光的发光层，并且包括至少一个量子阱。在与p型半导体层相邻的量子阱中包含的第一阻挡层和第二势垒层中，p型杂质掺杂在更靠近p型半导体层的第一势垒层中。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2012059772A Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2012059772A
公开(公告)日：2012-03-22
申请号：JP2010199081
申请日：2010-09-06
申请人： Toshiba Corp , 株式会社東芝
发明人： KIKUCHI TAKUO , YABUHARA HIDEHIKO
IPC分类号： H01L33/06 , H01L33/32
CPC分类号： H01L33/04 , H01L33/06 , H01L33/12 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having reduced lattice strain in a quantum well and improved luminous efficiency.SOLUTION: A semiconductor light-emitting element comprises a semiconductor layer 3 of a first conductive type, a light-emitting layer 7, and a semiconductor layer 9 of a second conductive type. The semiconductor layer 3 of a first conductive type has a superlattice structure 5 in which semiconductor sublayers 5a including a first nitride semiconductor and second semiconductor sublayers 5b including a second nitride semiconductor with a larger lattice constant than the first nitride semiconductor are alternately stacked. The light-emitting layer 7 has a multiple quantum well structure in which quantum well sublayers 7b including a third nitride semiconductor with a smaller lattice constant than the second nitride semiconductor and barrier sublayers 7a including a fourth nitride semiconductor with a smaller lattice constant than the third nitride semiconductor are alternately stacked. At least one layer in the quantum well sublayers 7b has the same lattice spacing as the lattice constant of the third nitride semiconductor.
摘要翻译：要解决的问题：提供一种在量子阱中具有减小的晶格应变的半导体发光元件并提高发光效率。解决方案：半导体发光元件包括第一导电类型的半导体层3，发光层7和第二导电类型的半导体层9。第一导电类型的半导体层3具有超晶格结构5，其中包括第一氮化物半导体的半导体子层5a和包括具有比第一氮化物半导体更大的晶格常数的第二氮化物半导体的第二半导体子层5b交替堆叠。发光层7具有多量子阱结构，其中包括具有比第二氮化物半导体更小的晶格常数的第三氮化物半导体的量子阱子层7b和包括具有比第三个晶格常数小的晶格常数的第四氮化物半导体的势垒子层7a 氮化物半导体交替堆叠。量子阱子层7b中的至少一个层具有与第三氮化物半导体的晶格常数相同的晶格间距。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2013069795A Semiconductor light-emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2013069795A
公开(公告)日：2013-04-18
申请号：JP2011206425
申请日：2011-09-21
申请人： Toshiba Corp , 株式会社東芝
发明人： KIKUCHI TAKUO , YABUHARA HIDEHIKO , CHANG CHIYANG
IPC分类号： H01L33/32
CPC分类号： H01L33/32 , H01L33/02
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with improved luminous efficiency.SOLUTION: There is provided a semiconductor light-emitting element including an n-type semiconductor layer, a p-type semiconductor layer, a light-emitting layer, and an electron-blocking layer. The light-emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer and contains a nitride semiconductor. The electron-blocking layer is provided between the light-emitting layer and the p-type semiconductor layer and has an aluminum composition ratio increasing toward the p-type semiconductor layer from the light-emitting layer.

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