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1. 发明专利

JPH0448727A PLASMA PROCESSOR 失效
公开(公告)号：JPH0448727A
公开(公告)日：1992-02-18
申请号：JP15675690
申请日：1990-06-15
申请人： TOKYO ELECTRON LTD , TEL YAMANASHI KK
发明人： NISHIMURA EIICHI , TODA AKIHITO , SUGIYAMA KAZUHIKO , NAITO YUKIO
IPC分类号： C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To get a plasma processor which can produce plasma stably, according to the atmospheric gas pressure condition inside a chamber by providing a power splitter, which varies the distribution ratio of the RF power supplied to opposed electrodes by changing over the tap of the coil on the secondary side of a transformer. CONSTITUTION:In a power distributing means 30 is provided a power splitter 50 for varying the distribution ratio of the RF power supplied to an upper electrode 12 and a lower electrode 14. That is, the coil 38 on the secondary side has middle terminals 40b-40j which devide the number of total turns equally between both ends 40a and 40k, and a movable terminal, whose one end is grounded, is constituted so that it can contact with some one of the tap terminals 40a and 40k at both ends and those 40b-40j at the middle of the coil 38 on the secondary side. In case that the pressure of the atmospheric gas inside a vacuum vessel 10 is relatively high, plasma stabilized condition is formed by connecting the movable terminal 52 to one end 40k of the coil 38 on the secondary side, and applying 100% RF power to the upper electrode 12. In case that the pressure is lower than it, the plasma stabilized condition is formed by varying the distribution ratio such as 90/10 or 80/20.

2. 发明专利

JP2000188286A DEVICE AND METHOD FOR PLASMA TREATMENT 失效
公开(公告)号：JP2000188286A
公开(公告)日：2000-07-04
申请号：JP2000013920
申请日：2000-01-18
申请人： TOKYO ELECTRON LTD
发明人： IMAFUKU KOSUKE , ENDO NORISUKE , TAWARA KAZUHIRO , NAITO YUKIO , NAGASEKI KAZUYA , HIROSE KEIZO
IPC分类号： H01L21/302 , C23C16/505 , H01L21/203 , H01L21/3065 , H01L21/31 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To perform plasma treatment on an object to be treated in a high- density plasma atmosphere without giving damages to the object. SOLUTION: An upper electrode 21 and a susceptor 5, which is grounded through a blocking capacitor 6 independently from a treating vessel 2, are respectively provided in the upper and lower sections of the vessel 2 in a state where the electrode 21 and susceptor 5 are faced opposite to each other. The 380 kHz high-frequency power from a high-frequency power source 41 is impressed upon two electrodes through a transformer 42, in such a way that the phase of the power is shifted by 180 deg.. The 13.56 MHz high-frequency power from a high-frequency power source 51 is impressed upon the upper electrode 21. Since the density of plasma is controlled by the high-frequency power from the power source 51 and ion energy is controlled by the high-frequency power from the power source 41, high-selectivity plasma treatment can be performed on a wafer W, without giving damages to the wafer W.

3. 发明专利

JPH08264515A PLASMA TREATMENT DEVICE, PROCESSING DEVICE AND ETCHING DEVICE 失效
公开(公告)号：JPH08264515A
公开(公告)日：1996-10-11
申请号：JP12086995
申请日：1995-04-20
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： IMAFUKU KOSUKE , ENDOU SHIYOUSUKE , TAWARA KAZUHIRO , TSUCHIYA HIROSHI , TOMOYASU MASAYUKI , NAITO YUKIO , NAGASEKI KAZUYA , NONAKA TATSU , HIROSE KEIZO , FUKAZAWA YOSHIO , KOSHIISHI AKIRA , KOBAYASHI ISAO
IPC分类号： H05H1/46 , C23C16/507 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To perform fine working on a subject to be treatment by preventing diffusion of plasma generated between counter electrodes and improving plasma density. CONSTITUTION: High-frequency from a high-frequency power source 51 is applied on a top electrode 21, and the high-frequency from a high-frequency power source 52 is applied on a susceptor 5. In the vicinity of the circumference of the top electrode 21, an almost cylinder-shaped grounding electrode 27 is provided so as to surround the space between the electrodes. Each high-frequency power source is controlled by a phase controller 57, and high-frequencies with 180 deg. different current phases are applied to the top electrode 21 and the susceptor 5, respectively.

4. 发明专利

JPH08162293A PLASMA TREATMENT APPARATUS AND CONTROL METHOD 失效
公开(公告)号：JPH08162293A
公开(公告)日：1996-06-21
申请号：JP33024094
申请日：1994-12-05
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： NAITO YUKIO , TSUCHIYA HIROSHI , FUKAZAWA YOSHIO , MOCHIZUKI SHUJI
IPC分类号： H05H1/46 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To provide a plasma treatment apparatus and a control method of the apparatus by which plasma ignition and stop can be done with little charging up damage. CONSTITUTION: A plasma treatment apparatus is an apparatus provided with a lower part electrode (4) on which an object for treatment is mounted and which is installed in a treatment chamber (2), an upper part electrode (21) installed at a position on the opposite to the lower part electrode, high frequency oscillators 18, 19 to apply high frequency electric power to both electrodes independently. At the time of plasma generation, the apparatus is controlled in the way that one high frequency oscillator 18 is turned on to ignite plasma and then the other high frequency oscillator 19 is turned on and at the time of plasma stop, the apparatus is controlled in the way one is turned off and then the other is turned off or the total output of both of the high frequency oscillators is gradually decreased.

5. 发明专利

JP2012189160A Bolt loosening prevention device, its attachment method and attachment jig 有权
标题翻译：螺栓松弛预防装置，其附件方法和附件
公开(公告)号：JP2012189160A
公开(公告)日：2012-10-04
申请号：JP2011053966
申请日：2011-03-11
申请人： Tokyo Electron Ltd , Fujikin Inc , 東京エレクトロン株式会社 , 株式会社フジキン
发明人： AMIKURA NORIHIKO , KAGATSUME SATORU , SATO MASAHIKO , NAITO YUKIO , MUTO SATOSHI , NAKADA TOMOHIRO , SHINOHARA TSUTOMU , YAMAJI MICHIO
IPC分类号： F16B39/10 , F16K27/00
CPC分类号： F16B39/101 , F16B39/103 , Y10T29/49826 , Y10T29/53 , Y10T403/50
摘要： PROBLEM TO BE SOLVED: To provide a bolt loosening prevention device which has a simplified member structure and enables easy attachment.SOLUTION: The bolt loosening prevention device includes a plurality of attachment members 2 and 3 to be attached in each head of a plurality of bolts 5 so that each of them cannot rotate relatively and an engagement member 4 engaged with and across the attachment members 2 and 3. The attachment members 2 and 3 have non-annular outer peripheries 2b and 3b. The engagement member 4 includes a plurality of engagement holes (non-annular engagement parts) 8a and 8b corresponding to the non-annular outer peripheries 2b and 3b of the attachment members 2 and 3.
摘要翻译：要解决的问题：提供具有简化的构件结构并且能够容易地附接的螺栓松动防止装置。解决方案：螺栓松动防止装置包括多个附接构件2和3，其被附接在多个螺栓5的每个头部中，使得它们中的每一个不能相对旋转，并且接合构件4与附件接合并穿过附件构件2和3.附接构件2和3具有非环形的外周2b和3b。接合构件4包括与安装构件2和3的非环形外周2b和3b相对应的多个接合孔（非环形接合部）8a和8b。（C）2013，JPO＆INPIT

6. 发明专利

JP2001308080A PLASMA PROCESSING APPARATUS 失效
公开(公告)号：JP2001308080A
公开(公告)日：2001-11-02
申请号：JP2001077749
申请日：2001-03-19
申请人： TOKYO ELECTRON LTD
发明人： IMAFUKU KOSUKE , ENDO NORISUKE , TAWARA KAZUHIRO , TSUCHIYA HIROSHI , TOMOYASU MASAYUKI , NAITO YUKIO , NAGASEKI KAZUYA , NONAKA TATSU , HIROSE KEIZO , FUKAZAWA YOSHIO , KOSHIISHI AKIRA , KOBAYASHI ISAO
IPC分类号： H05H1/46 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To realize a high-density plasma by confining a plasma in a space between electrodes without diffusing it in a processing chamber. SOLUTION: The plasma processing apparatus for processing a work on a susceptor in a process chamber with a plasma generated by a high-frequency power in the process chamber, comprises a first annular magnetic field forming means disposed concentrically to the susceptor around the vicinity of the susceptor, and a second magnetic field forming means composed of a permanent magnet 72 is disposed facing the first magnetic field forming means via a gap with a magnetic member 75 attached to a permanent magnet 72.

7. 发明专利

JPH07302786A APPARATUS FOR PLASMA TREATMENT 失效
公开(公告)号：JPH07302786A
公开(公告)日：1995-11-14
申请号：JP11358794
申请日：1994-04-28
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： IMAFUKU KOSUKE , ENDOU SHIYOUSUKE , TAWARA KAZUHIRO , NAITO YUKIO , NAGASEKI KAZUYA , HIROSE KEIZO
IPC分类号： C23C16/52 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To perform a fine treatment on a material to be treated in a high- density plasma atmosphere without inflicting damage on the material to be treated in a plasma treater having a power slit style. CONSTITUTION:An upper electrode 21 and a susceptor 5, which is grounded independently of a treating container 21, are provided in opposition to each other upward and downward in the container 2. A 380kHz power from a high-frequency power supply 41 is applied to two electrodes shifting a phase by 180 deg. via a transformer 42. A 13.56MHz power from a high-frequency power supply 51 is applied to the electrode 21. As control of the density of plasma is conducted by the high-frequency power from the power supply 51 and the energy of ions is controlled by the high-frequency power from the power supply 41, a high-selectivity plasma treatment is performed on a wafer W without inflicting damage on the wafer W.

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