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1. 发明专利

JPH0964021A PLASMA PROCESSING METHOD 失效
公开(公告)号：JPH0964021A
公开(公告)日：1997-03-07
申请号：JP23774795
申请日：1995-08-22
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： NONAKA TATSU , KOBAYASHI YOSHIYUKI
IPC分类号： C23C14/34 , C23C16/50 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing method which cause no phenomenon such as rocking and jumping when a workpiece whose process is completed is separated from an electrostatic chuck. SOLUTION: Relating to a method wherein a wafer W is held on an electrostatic chuck 11 in a process chamber 2, and the inside of process chamber 23 is made in a specified degree of vacuum, and plasma is generated in the process chamber 2 for performing specified plasma processing on the workpiece W on the electrostatic chuck 11, after the plasma processing is performed, gas is introduced into the process chamber 2 for making the pressure in the process chamber 2 in degree of vacuum 0.5-3Torr, and under the condition, the water W is separated from the electrostatic chuck 11. Just before the wafer W is separated from the electrostatic chuck 11, residual electric charges mutually cause discharge for destaticization between an insulator surface of the electrostatic chuck 11 and hte rear face of the wafer W, so that the wafer W is smoothly separated from the electrostatic chuck 11.

2. 发明专利

JPH08264515A PLASMA TREATMENT DEVICE, PROCESSING DEVICE AND ETCHING DEVICE 失效
公开(公告)号：JPH08264515A
公开(公告)日：1996-10-11
申请号：JP12086995
申请日：1995-04-20
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： IMAFUKU KOSUKE , ENDOU SHIYOUSUKE , TAWARA KAZUHIRO , TSUCHIYA HIROSHI , TOMOYASU MASAYUKI , NAITO YUKIO , NAGASEKI KAZUYA , NONAKA TATSU , HIROSE KEIZO , FUKAZAWA YOSHIO , KOSHIISHI AKIRA , KOBAYASHI ISAO
IPC分类号： H05H1/46 , C23C16/507 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To perform fine working on a subject to be treatment by preventing diffusion of plasma generated between counter electrodes and improving plasma density. CONSTITUTION: High-frequency from a high-frequency power source 51 is applied on a top electrode 21, and the high-frequency from a high-frequency power source 52 is applied on a susceptor 5. In the vicinity of the circumference of the top electrode 21, an almost cylinder-shaped grounding electrode 27 is provided so as to surround the space between the electrodes. Each high-frequency power source is controlled by a phase controller 57, and high-frequencies with 180 deg. different current phases are applied to the top electrode 21 and the susceptor 5, respectively.

3. 发明专利

JPH05226292A STARTING METHOD FOR PLASMA-PROCESSING 失效
公开(公告)号：JPH05226292A
公开(公告)日：1993-09-03
申请号：JP5936792
申请日：1992-02-13
申请人： TEL YAMANISHI KK
发明人： FUKAZAWA KAZUO , NONAKA TATSU
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683
摘要： PURPOSE:To prevent damage due to temperature rise of a material to be processed and to shorten the rising time by supplying cooling gas before a plasma is generated. CONSTITUTION:A material 1 to be processed is placed on placing and guiding means 40 of a grounded state to destaticize the material 1 to be processed, and the Coulomb force is made to act between a conductive layer 16 on a lower part of a placing base 10. After the material 1 to be processed is attracted to and held on the base 10 by the Coulomb force, cooling gas is supplied, and then a plasma is started to be generated.

4. 发明专利

JPH05226291A PLASMA-PROCESSING METHOD 失效
公开(公告)号：JPH05226291A
公开(公告)日：1993-09-03
申请号：JP5936692
申请日：1992-02-13
申请人： TEL YAMANISHI KK
发明人： FUKAZAWA KAZUO , NONAKA TATSU
IPC分类号： B23Q3/15 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683
摘要： PURPOSE:To provide a method for plasma-processing in which electrostatic chuck can sustain a strong attractive force an even if plasma-processing is repeatedly conducted. CONSTITUTION:After plasma-processing is finished, charge retained on an attraction surface of an electrostatic chuck 10 is removed by electrostatically eliminating the surface of the chuck 10. The steps of electrostatically eliminating can be realized by the steps of generating a weak plasma in a reaction chamber, bringing the attraction surface of the chuck 10 into contact with a ceiling of the chamber of a ground state, bringing conveying means 40 of a ground state into contact with a material 1 to be processed placed on the surface of the chuck 10 and leaving it to stand for a predetermined time.

5. 发明专利

JP2009054630A Cylinder stop position variable mechanism and substrate treating apparatus comprising the same 审中-公开
标题翻译：气缸停止位置可变机构和底板处理装置
公开(公告)号：JP2009054630A
公开(公告)日：2009-03-12
申请号：JP2007217119
申请日：2007-08-23
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HAYASHI DAISUKE , NONAKA TATSU
IPC分类号： H01L21/68 , H01L21/205 , H01L21/3065
CPC分类号： F15B15/24 , H01L21/67126 , H01L21/68792
摘要： PROBLEM TO BE SOLVED: To provide a means for moving up and down a semiconductor substrate or a mounting table therefor scarcely imparting vibration thereto and which is capable of freely changing the vertical stop position in moving up and down in a treating apparatus for the semiconductor substrate. SOLUTION: This cylinder stop position variable mechanism comprises, in a cylinder having a piston and a shaft and driving at a fluid pressure, a stopper which penetrates and locking the shaft, a pair of limiters for stopping the advance and retract of the piston by abutting the stopper, and a limiter moving mechanism for making the limiter position variable. Further, the limiter moving mechanism is controlled by a motor, the limiter moving mechanism is provided for each of the pair of limiters, and each limiter can be subjected to position control independently. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于上下移动半导体衬底或安装台的装置，其几乎不产生振动，并且能够在用于处理设备的处理设备中上下移动中自由地改变垂直停止位置半导体衬底。解决方案：该气缸停止位置可变机构在具有活塞和轴并且以流体压力驱动的气缸中包括穿过并锁定轴的止动件，用于停止前进和后退的一对限位器活塞通过抵接止动件，以及限制器移动机构，用于使限制器位置变化。此外，限制器移动机构由电动机控制，为每对限制器中的每一个设置限幅器移动机构，并且可以独立地对每个限制器进行位置控制。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2008251743A Substrate processing system and substrate cleaning apparatus 有权
标题翻译：基板加工系统和基板清洗装置
公开(公告)号：JP2008251743A
公开(公告)日：2008-10-16
申请号：JP2007089803
申请日：2007-03-29
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MORIYA TAKESHI , ONISHI TADASHI , NONAKA TATSU , NISHIMURA EIICHI
IPC分类号： H01L21/304
CPC分类号： H01L21/67051 , H01L21/6708
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing system completely removing foreign matters adhering on the rear surface or periphery of a substrate.
SOLUTION: A process module 15 as a substrate cleaning apparatus provided in the substrate processing system 10 is provided with: a chamber 38 for housing a wafer W; a stage 39 disposed on the bottom of the chamber 38 and placing the wafer W; and a shower head 40 disposed on the ceiling in the chamber 38 and opposing the stage 39. The stage 39 jets a cleaning agent in which cleaning substances exhibiting two phase states of a liquid phase and a gas phase, e.g., pure water and inert gas, e.g., a nitrogen gas are mixed, toward the rear surface or periphery of the wafer W, and the shower head 40 generates downflow toward the surface of the wafer W.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种完全去除附着在基板的背面或周边上的异物的基板处理系统。解决方案：设置在基板处理系统10中的作为基板清洁装置的处理模块15设置有：用于容纳晶片W的室38; 设置在室38的底部并放置晶片W的阶段39; 以及设置在室38中的天花板上并与台架39相对的淋浴头40.台架39喷射清洁剂，其中表现出液相和气相的两相状态的清洁物质，例如纯水和惰性气体例如氮气被混合到晶片W的后表面或周边，并且喷头40朝向晶片W的表面产生向下流动。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2003282544A High-frequency feeder rod 有权
标题翻译：高频进料器
公开(公告)号：JP2003282544A
公开(公告)日：2003-10-03
申请号：JP2002085303
申请日：2002-03-26
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： NONAKA TATSU
IPC分类号： C23C16/505 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To solve the problem of the overheating of a high-frequency feeder rod 1 caused by inadequate cooling by air due to poor cooling efficiency in a conventional high-frequency feeder rod 1, since the temperature rise of the feeder rod 1 is excessively large due to increased high-frequency resistance as high-frequency power increases with an increase in size of the object to be treated such as a wafer.
SOLUTION: This high-frequency feeder rod 20 is used to feed high-frequency power to a lower electrode 12 for plasma treatment to a wafer W, and is composed of an electrically conductive rod having a passage 20A for a coolant (for example, air) in its inside, while a plurality of fin-shaped protrusions 20B that protrude inside the passage 20A are arranged as a means for expanding heat absorption area by the air.
COPYRIGHT: (C)2004,JPO
摘要翻译：解决问题：为了解决由于常规高频给料棒1中的冷却效率差而导致由于空气不足而引起的高频进料棒1过热的问题，由于温度升高由于随着高频功率随着诸如晶片的待处理对象的尺寸的增加而增加，由于高频电阻的增加，馈线杆1过大。
解决方案：该高频馈线杆20用于将高频电力馈送到用于等离子体处理的下电极12到晶片W，并且由具有用于冷却剂的通道20A的导电棒（用于例如空气），而在通道20A内突出的多个鳍状突起20B被布置为用于通过空气扩大吸热面积的装置。版权所有（C）2004，JPO

8. 发明专利

JPH10261698A PLASMA PROCESSOR 失效
公开(公告)号：JPH10261698A
公开(公告)日：1998-09-29
申请号：JP8574497
申请日：1997-03-19
申请人： TOKYO ELECTRON LTD
发明人： NONAKA TATSU
IPC分类号： H05H1/46 , B23Q3/15 , C23C16/50 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/683 , H02N13/00 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a plasma processor in which a substance to be processed can be placed on an electrostatic chuck being a uniform plane. SOLUTION: An electrostatic chuck 118 is composed of a central member 120 and each of outer members 122, and the central member 120, and each outer member 122 are provided at the stage of a susceptor 110 at a specified distance from each other so as to absorb thermal stress. Interval regions 124 and 126 are made between the central member 120 and the outer member 122 and between each outer member 122 and the next. A heat conductive gas nozzle 138 is arranged at the stage of the susceptor 110, corresponding to the interval regions 124 and 126. An airtight member 140, at the end of a processing chamber 102 of each passage 126, and a bulkhead 142, at the side end of the passage 124 of each passage, are arranged. When a high voltage is applied to the films built in the central member 120 and the outer member 122, the wafer on a chuck face is retained, and also the heat conductive gas is supplied between the wafer and the chuck face from the heat conductive gas nozzle 138.

9. 发明专利

JPH09120988A PLASMA PROCESSING METHOD 失效
公开(公告)号：JPH09120988A
公开(公告)日：1997-05-06
申请号：JP19134896
申请日：1996-07-02
申请人： TOKYO ELECTRON LTD
发明人： NONAKA TATSU
IPC分类号： H05H1/46 , B23Q3/15 , C23C14/34 , C23C14/50 , C23C16/50 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/68 , H01L21/683 , H02N13/00
摘要： PROBLEM TO BE SOLVED: To prevent attraction failures of an electrostatic chuck without deteriorating the electrostatic chuck and decreasing the throughput and strengthen its attraction force. SOLUTION: With the aid of an electrostatic attraction generated by applying a positive DC voltage to an electrostatic chuck 11, a wafer W is attracted to the chuck 11, and a processing gas is supplied to a processing chamber 2 to generate a plasma, thereby processing the wafer W with the plasma. In this case, after the processed wafer W is released from the chuck 11, a nitrogen gas introduced to the chamber 2 prior to attracting the following wafer W to the chuck 11, and a negative DC voltage is applied to the chuck 11 for DC discharging. Thus, the charges in a gas is attracted to the surface of the chuck 11, so that the residual charge is removed therefrom.

10. 发明专利

JP2013030392A Plasma processing apparatus 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：JP2013030392A
公开(公告)日：2013-02-07
申请号：JP2011166441
申请日：2011-07-29
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： NONAKA TATSU
IPC分类号： H05H1/46 , C23C16/509 , H01L21/205 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which generates plasma having high uniformity.SOLUTION: A plasma processing apparatus includes: a processing container C where plasma processing is performed; an RF generator 14 applying high frequency power to a lower electrode 12 provided at the processing container C; a matching box 15 provided between the RF generator 14 and the lower electrode 12 and connected with the RF generator 14 by using a coaxial cable 16. A bypass path 30, connecting a line 16a on the ground side of the coaxial cable 16 with an upper electrode 11 facing the lower electrode 12, is provided.
摘要翻译：解决的问题：提供一种产生高均匀性的等离子体的等离子体处理装置。解决方案：等离子体处理装置包括：进行等离子体处理的处理容器C; RF发生器14向设置在处理容器C的下电极12施加高频电力; 设置在RF发生器14和下电极12之间并通过使用同轴电缆16与RF发生器14连接的匹配盒15.一个旁路路径30，将同轴电缆16的接地侧上的线16a与上部设置面向下电极12的电极11。版权所有（C）2013，JPO＆INPIT

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