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1. 发明专利

JPH07221080A PLASMA TREATMENT APPARATUS 失效
公开(公告)号：JPH07221080A
公开(公告)日：1995-08-18
申请号：JP3183294
申请日：1994-02-03
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： TSUKAMOTO YUJI , HIROSE KEIZO
IPC分类号： C23C14/44 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To provide a plasma treatment apparatus in which a stable discharge can be obtained and which is provided with a space-saving power-supply circuit. CONSTITUTION:In addition to a main power supply 33 which can apply a high current to a main discharge electrode 11, an auxiliary power supply 36 which can apply a high voltage to a spare discharge electrode 10 is installed. As a result, since an initial discharge at a rise is stabilized and an overcurrent does not flow to the spare discharge electrode 10, a plasma can be shifted smoothly to an intermediate chamber 14 from a cathode chamber 14A. In addition, although the number of power supplies is increased, the power supplies which are small are used, and a space-saving apparatus as a total space can be constructed.

2. 发明专利

JPH0955374A PLASMA TREATMENT APPARATUS 失效
公开(公告)号：JPH0955374A
公开(公告)日：1997-02-25
申请号：JP14218896
申请日：1996-05-13
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： KOSHIISHI AKIRA , OGASAWARA MASAHIRO , HIROSE KEIZO , NAGASEKI KAZUYA
IPC分类号： H05H1/46 , C23C16/50 , C23C16/509 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To obtain a plasma treatment apparatus by which the diffusion of a plasma is suppressed effectively when a substrate to be treated is treated with the plasma in a plasma atmosphere, by which a highly fine treatment can be executed at a high vacuum degree and a high plasma density and, at the same time, which prevents the inside wall of a treatment container from being sputtered by the plasma. SOLUTION: A lower-side insulator 13 is installed around a susceptor 6 to be used as a lower-part electrode, and an upper-side insulator 31 is installed around an upper-part electrode 21. The outer end part 31a of the upper insulator 31 is situated at the outside of the lower-side insulator 13, and it is situated in a position which is lower than the surface of a wafer W. A narrowest gap L between the lower-side insulator 13 and the upper-side insulator 31 is made narrower than a gap G between the electrodes. Since the diffusion of a plasma generated between the electrodes is suppressed so as not to be diffused to side parts as it is, the inside wall of a treatment container 3 is not sputtered.

3. 发明专利

JPH08335568A ETCHING APPARATUS 失效
公开(公告)号：JPH08335568A
公开(公告)日：1996-12-17
申请号：JP16686695
申请日：1995-06-07
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： HIROSE KEIZO , KOSHIISHI AKIRA
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To make it possible to enclose plasma efficiently between electrodes and to give uniform treatment without kindering the exhaust of gases even if the degree of vacuum in the treatment chamber is made higher to execute fine etching at a high speed. CONSTITUTION: A quartz shield ring 42 is provided near an upper electrode 41, and an inner side focus ring 21 of silicon and an outer side focus ring 22 of quartz are provided in the vicinity of a susceptor 6 where a wafer W is placed. A portion between a projected portion 43 of the shield ring 42 and an outer side focus ring 22 is made narrower than a gap between the electrodes, and the projected portion 43 is positioned above the outer side focus ring 22. Diffusion of plasma is prevented by the projected portion 43 and the outer side focus ring 22. Density of plasma is not unreasonably increased in the vicinity of the wafer W since the inner side focus ring 21 is located between them. Thickness of the projected portion 43 is not large, so that the gas conductance is good.

4. 发明专利

JPH08264515A PLASMA TREATMENT DEVICE, PROCESSING DEVICE AND ETCHING DEVICE 失效
公开(公告)号：JPH08264515A
公开(公告)日：1996-10-11
申请号：JP12086995
申请日：1995-04-20
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： IMAFUKU KOSUKE , ENDOU SHIYOUSUKE , TAWARA KAZUHIRO , TSUCHIYA HIROSHI , TOMOYASU MASAYUKI , NAITO YUKIO , NAGASEKI KAZUYA , NONAKA TATSU , HIROSE KEIZO , FUKAZAWA YOSHIO , KOSHIISHI AKIRA , KOBAYASHI ISAO
IPC分类号： H05H1/46 , C23C16/507 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To perform fine working on a subject to be treatment by preventing diffusion of plasma generated between counter electrodes and improving plasma density. CONSTITUTION: High-frequency from a high-frequency power source 51 is applied on a top electrode 21, and the high-frequency from a high-frequency power source 52 is applied on a susceptor 5. In the vicinity of the circumference of the top electrode 21, an almost cylinder-shaped grounding electrode 27 is provided so as to surround the space between the electrodes. Each high-frequency power source is controlled by a phase controller 57, and high-frequencies with 180 deg. different current phases are applied to the top electrode 21 and the susceptor 5, respectively.

5. 发明专利

JPH07302786A APPARATUS FOR PLASMA TREATMENT 失效
公开(公告)号：JPH07302786A
公开(公告)日：1995-11-14
申请号：JP11358794
申请日：1994-04-28
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： IMAFUKU KOSUKE , ENDOU SHIYOUSUKE , TAWARA KAZUHIRO , NAITO YUKIO , NAGASEKI KAZUYA , HIROSE KEIZO
IPC分类号： C23C16/52 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To perform a fine treatment on a material to be treated in a high- density plasma atmosphere without inflicting damage on the material to be treated in a plasma treater having a power slit style. CONSTITUTION:An upper electrode 21 and a susceptor 5, which is grounded independently of a treating container 21, are provided in opposition to each other upward and downward in the container 2. A 380kHz power from a high-frequency power supply 41 is applied to two electrodes shifting a phase by 180 deg. via a transformer 42. A 13.56MHz power from a high-frequency power supply 51 is applied to the electrode 21. As control of the density of plasma is conducted by the high-frequency power from the power supply 51 and the energy of ions is controlled by the high-frequency power from the power supply 41, a high-selectivity plasma treatment is performed on a wafer W without inflicting damage on the wafer W.

6. 发明专利

JP2012175041A Joining device, joining system, joining method, program and computer storage medium 有权
标题翻译：加工设备，加工系统，加工方法，程序和计算机存储介质
公开(公告)号：JP2012175041A
公开(公告)日：2012-09-10
申请号：JP2011038349
申请日：2011-02-24
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HIROSE KEIZO , KITAHARA SHIGENORI
IPC分类号： H01L21/02 , B23K20/00 , B23K20/24 , H01L21/683
CPC分类号： H01L21/67092 , H01L21/6715 , H01L21/68 , H01L21/6875
摘要： PROBLEM TO BE SOLVED: To appropriately and efficiently join substrates with each other while suppressing generation of a void between the substrates.SOLUTION: A joining device includes: an upper chuck 230 for sucking and holding an upper wafer Won a lower surface; and a lower chuck 231 provided below the upper chuck 230, for mounting, sucking and holding a lower wafer Won an upper surface. The upper chuck 230 is provided with a pushing member 250 for pressurizing a center part of the upper wafer W. On a distal end part on the side of the upper wafer Win a pushing pin 251 of the pushing member 250, a guide member 253 which sucks and holds the upper wafer W, fixes the position in a horizontal direction of the upper wafer Wand is freely movable in a vertical direction is provided. On an outer peripheral part of the lower chuck 231, a stopper member 262 for the wafers Wand Wand a piled wafer Wis provided.
摘要翻译：要解决的问题：为了适当且有效地将基板彼此接合，同时抑制基板之间的空隙的产生。解决方案：接合装置包括：用于在下表面上吸附和保持上晶片W U 的上卡盘230; 以及设置在上卡盘230的下方的用于安装，吸附和保持下表面上的下晶片W L 的下卡盘231。上卡盘230设置有用于对上晶片W U 的中心部分进行加压的推动构件250。在推动构件250的推压销251中的上晶片W U 侧的远端部分上，吸引并保持上晶片W < SB POS =“POST”> U ，固定上晶片W U 的水平方向的位置，并且可以在垂直方向上自由移动。在下卡盘231的外周部分上设有用于晶片W U 和W L 的止动构件262，提供了晶片W T 。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2001096238A INSTRUMENT, DEVICE AND METHOD FOR WASHING SUBSTRATE 失效
公开(公告)号：JP2001096238A
公开(公告)日：2001-04-10
申请号：JP2000215710
申请日：2000-07-17
申请人： TOKYO ELECTRON LTD
发明人： HIROSE KEIZO , SEKIGUCHI KENJI , INOUE TOMOTSUGU , MIYAZAKI TAKANORI , UENO KINYA , ORII TAKEHIKO
IPC分类号： B08B1/00 , B08B3/02 , B08B3/04 , B08B3/12 , B08B7/04 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a substrate washing instrument for preventing a substrate from being contaminated and damaged and its shape from being broken and to provide a substrate washing device using such an instrument. SOLUTION: This substrate washing device 7 is provided with a purified water supply route 60 for supplying purified water to the inside of a rod 31, a water-permeable core material 68 to which the purified water is supplied through the route 60, a washing brush 24 provided with a resin sheet 69 coated with the material 68 on a planar part 72 formed on the under surface of the material 68 and an air bearing cylinder 30 for vertically imparting thrust to a rod 31 pressing the brush 24.

8. 发明专利

JPH11295903A FORMING METHOD OF RESIST MASK 失效
公开(公告)号：JPH11295903A
公开(公告)日：1999-10-29
申请号：JP11420598
申请日：1998-04-09
申请人： TOKYO ELECTRON LTD
发明人： TOSHIMA TAKAYUKI , HIROSE KEIZO
IPC分类号： G03F7/38
摘要： PROBLEM TO BE SOLVED: To prevent such a phenomenon that a dissolved gas in a developer such as dissolved nitrogen is present as bubbles between the developer and the surface of a resist film, and to prevent development defects in the processes of applying a resist on a substrate surface, exposing and developing. SOLUTION: The surface of the resist film on a substrate after exposure is irradiated with light in an UV region of shorter wavelengths than the light used for exposure, for example, at room temp. for 1 to 2 sec to change the surface part of the resist film from hydrophobic to hydrophilic, and then the film is developed. By changing the surface of the resist film into hydrophilic, even when bubbles in the developer deposits on the surface, the bubbles float and do not cause development defects.

9. 发明专利

JPH06216070A PLASMA SURFACE TREATING DEVICE 失效
公开(公告)号：JPH06216070A
公开(公告)日：1994-08-05
申请号：JP658993
申请日：1993-01-19
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD
发明人： MITSUI TADASHI , SEKINE MAKOTO , HORIOKA KEIJI , ITO HITOSHI , HIROSE KEIZO , NAGASEKI KAZUYA , HIMORI SHINJI , MOCHIZUKI SHUJI
IPC分类号： H01L21/302
摘要： PURPOSE:To provide a plasma surface treating device which is capable of uniformly treating the surface of a work with plasma even if the work is large in diameter. CONSTITUTION:A plasma etching process is executed through such manner that electrons accelerated by an electron beam accelerating electrode 8 are made to irradiate a plasma source gas to generate plasma, and a semiconductor wafer 3 placed on a wafer holder 4 is etched with this plasma, wherein a reactive gas feed reservoir 17 equipped with blowoff holes and connected with a reaction gas supply source is provided in a film forming room.

10. 发明专利

JPH0277126A DRY ETCHING 失效
公开(公告)号：JPH0277126A
公开(公告)日：1990-03-16
申请号：JP19590388
申请日：1988-08-04
申请人： TOKYO ELECTRON LTD
发明人： HIROSE KEIZO , NISHIMURA TOSHIHARU
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To enable anisotropic etching of a desired trench form with a high aspect ratio, while high selection ratio and high etching rate are maintained, by intermittently adding a gas having a protecting film forming action, during a process wherein main etching gas is introduced and dry etching is executed in a plasma atmosphere. CONSTITUTION:A silicon semiconductor wafer 8 is carried onto a second electrode 3; etching reaction gas, e.g., SF6 gas with a flow rate of 60 SCCM, O2 gas with a flow rate of 40 SCCM and Kr gas with a flow rate of 100 SCCM are supplied in the above vessel 1; the inside of the hermetic vessel 1 is kept at a constant pressure, e.g., 0.6Torr; at this time, from a gas feeding pipe 7, gas having a protecting film forming action, e.g., SiCl4 gas with a flow rate of 1 SCCM is intermittently added, thereby protecting the side wall of the inside of trench. That is, the balance between the etching and the side wall protection can be maintained to the utmost, so that the trench form of trench etching can be controlled in a desirable superior form, without decreasing the etching rate.

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