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1. 发明专利

JPH08162444A PLASMA PROCESSOR AND CONTROL METHOD THEREOF 失效
公开(公告)号：JPH08162444A
公开(公告)日：1996-06-21
申请号：JP33128394
申请日：1994-12-08
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： IMAFUKU KOSUKE , TSUCHIYA HIROSHI , FUKAZAWA YOSHIO , MOCHIZUKI SHUJI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE: To provide a plasma etching device capable of making the plasma density higher even under low pressure condition. CONSTITUTION: Within the plasma processor provided with a lower electrode 4 whereon a processed body arranged in a processing chamber 2, an upper electrode 21 arranged in the position opposite to the lower electrode 4, a high-frequency oscillator for feeding high-frequency power to the respective upper and lower electrodes, the lower electrode 4 is elevatable and an aperture part for carrying in and out a processed body is provided beneath the processing chamber 2. The carry-in and-out region as well as the processing region of the processed body are divided.

2. 发明专利

JPH08162292A PLASMA TREATMENT APPARATUS AND CONTROL METHOD THEREOF 失效
公开(公告)号：JPH08162292A
公开(公告)日：1996-06-21
申请号：JP33023994
申请日：1994-12-05
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： TSUCHIYA HIROSHI , FUKAZAWA YOSHIO , MOCHIZUKI SHUJI
IPC分类号： H05H1/46 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To provide a plasma treatment apparatus which can keep sufficient selection ratio and etching ratio even in low pressure atmosphere. CONSTITUTION: A plasma etching treatment apparatus 1 is provided with a lower part electrode 4 on which an object for treatment and which is installed in a treatment chamber 2 and an upper part electrode 21 set at a position on the opposite to the lower part electrode 4 and the respective electrodes are so composed as to apply high frequency electric power to the respective electrodes while the phase and the ratio of the electric power being controlled independently for respective electrodes. Based on the demanded etching rate and/or selection ratio, the phase difference and the ratio of the electric power to be applied between both electrodes are controlled, so that preferable selection ratio and etching ratio can be obtained even in as low pressure atmosphere as 100mTorr or lower.

3. 发明专利

JPH08162293A PLASMA TREATMENT APPARATUS AND CONTROL METHOD 失效
公开(公告)号：JPH08162293A
公开(公告)日：1996-06-21
申请号：JP33024094
申请日：1994-12-05
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： NAITO YUKIO , TSUCHIYA HIROSHI , FUKAZAWA YOSHIO , MOCHIZUKI SHUJI
IPC分类号： H05H1/46 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To provide a plasma treatment apparatus and a control method of the apparatus by which plasma ignition and stop can be done with little charging up damage. CONSTITUTION: A plasma treatment apparatus is an apparatus provided with a lower part electrode (4) on which an object for treatment is mounted and which is installed in a treatment chamber (2), an upper part electrode (21) installed at a position on the opposite to the lower part electrode, high frequency oscillators 18, 19 to apply high frequency electric power to both electrodes independently. At the time of plasma generation, the apparatus is controlled in the way that one high frequency oscillator 18 is turned on to ignite plasma and then the other high frequency oscillator 19 is turned on and at the time of plasma stop, the apparatus is controlled in the way one is turned off and then the other is turned off or the total output of both of the high frequency oscillators is gradually decreased.

4. 发明专利

JPH07183270A PLASMA TREATMENT DEVICE 失效
公开(公告)号：JPH07183270A
公开(公告)日：1995-07-21
申请号：JP34757193
申请日：1993-12-24
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： ARAKI YOICHI , NAGASEKI KAZUYA , MOCHIZUKI SHUJI
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065 , H05H1/48
摘要： PURPOSE:To provide a plasma treatment device capable of suppressing a deposit of sputtered matter from an initial discharge electrode or a cathode electrode and further particles such as damaged pieces of a thermion releasing member to a body to be treated and of enhancing a manufacturing yield of the body to be treated. CONSTITUTION:This embodiment comprises: an initial discharge electrode 7 for initial-discharging inactive gas together with a ringlike cathode electrode 5; a thermion release member 11 provided on the opposed surface to the initial discharge electrode 7 of the cathode electrode and having the same specific inner radius as the cathode electrode 5; an intermediate electrode 12 provided on the side of a treatment chamber 4 of the cathode electrode 5 and having a smaller inner radius than that of the cathode electrode 5; and an anode electrode 13 provided on the side of the treatment chamber 4 of this intermediate electrode 12 and having a smaller inner radius than that of the cathode electrode 5, and the side of the cathode electrode 5 of the initial discharge electrode 7 is formed to be projected, curved, or tapered.

5. 发明专利

JPH0722339A FORMATION OF THIN FILM 失效
公开(公告)号：JPH0722339A
公开(公告)日：1995-01-24
申请号：JP16564493
申请日：1993-07-05
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： ITO HITOSHI , SUGURO KYOICHI , HAYASAKA NOBUO , OKANO HARUO , HIMORI SHINJI , NAGASEKI KAZUYA , MOCHIZUKI SHUJI
IPC分类号： H01L21/205 , C23C16/04 , C23C16/34 , H01L21/302 , H01L21/3065 , H01L21/768
摘要： PURPOSE:To provide a method of forming a thin film, which is capable of performing a film formation of a high directional property even if a groove formed in the surface of a semiconductor substrate is formed into a tapered form in a high aspect ratio. CONSTITUTION:A method of forming a thin film is performed in a constitution having a process, in which the interior of a film-forming chamber, wherein a semiconductor substrate 1 with a groove formed in its surface is housed, is evacuated at a pressure of 10 Torr or lower and thereafter, TiCl4, hydrogen, nitrogen and NF3 gas are introduced in the film-forming chamber, then, a process, in which these gases are brought into a plasma state to form selectively a TiN thin film 2 excepting the sidewall part of the groove.

6. 发明专利

JPH06291063A SURFACE TREATMENT DEVICE 失效
公开(公告)号：JPH06291063A
公开(公告)日：1994-10-18
申请号：JP9681793
申请日：1993-03-31
申请人： TOSHIBA CORP , TEL YAMANISHI KK
发明人： ITO HITOSHI , SUGURO KYOICHI , HAYASAKA NOBUO , OKANO HARUO , OKUMURA KATSUYA , NAGASEKI KAZUYA , HIMORI SHINJI , MOCHIZUKI SHUJI
IPC分类号： B01J19/08 , C23C16/48 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/46
摘要： PURPOSE:To provide a surface treatment device utilizing plasma which can prevent the contamination of a substrate to be treated by sputtering the inner wall of a reaction container with ions inside plasma. CONSTITUTION:The device is provided with a reaction container 1 for introducing plasma source gas, a second DC voltage power supply 26 for controlling the potential of the reaction container 1, a support stage 3 which is provided inside the reaction container 1 and on which a substrate 2 to be treated is mounted, a first DC voltage power source 25 for controlling the potential of the support stage 3, a first vacuum container 6 for generating electrons, and an electrode and coils 15 and 17 for introducing an electron beam into a reaction container 1 for turning the plasma source gas into plasma.

7. 发明专利

JPH06216070A PLASMA SURFACE TREATING DEVICE 失效
公开(公告)号：JPH06216070A
公开(公告)日：1994-08-05
申请号：JP658993
申请日：1993-01-19
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD
发明人： MITSUI TADASHI , SEKINE MAKOTO , HORIOKA KEIJI , ITO HITOSHI , HIROSE KEIZO , NAGASEKI KAZUYA , HIMORI SHINJI , MOCHIZUKI SHUJI
IPC分类号： H01L21/302
摘要： PURPOSE:To provide a plasma surface treating device which is capable of uniformly treating the surface of a work with plasma even if the work is large in diameter. CONSTITUTION:A plasma etching process is executed through such manner that electrons accelerated by an electron beam accelerating electrode 8 are made to irradiate a plasma source gas to generate plasma, and a semiconductor wafer 3 placed on a wafer holder 4 is etched with this plasma, wherein a reactive gas feed reservoir 17 equipped with blowoff holes and connected with a reaction gas supply source is provided in a film forming room.

8. 发明专利

JPS61170605A DETECTOR FOR INCLINATION OF SEMICONDUCTOR WAFER 失效
公开(公告)号：JPS61170605A
公开(公告)日：1986-08-01
申请号：JP1209685
申请日：1985-01-25
申请人： TOKYO ELECTRON LTD
发明人： MOCHIZUKI SHUJI
IPC分类号： G01B11/26
摘要： PURPOSE:To detect the inclination of a wafer on a clamping base with high accuracy without contact by irradiating the light from a light source to the wafer, condensing the reflected light so as to focus the same onto a photodetecting surface of a two-dimensional position detector and calculating the inclination from the output signal of the detector. CONSTITUTION:The light 12 from a laser diode 2 is irradiated through the condenser lens 14 to the surface of the semiconductor wafer 4 with the inclination of the angle theta with the normal 16 orthogonal with the wafer 4. The light 18 reflected on the surface of the wafer 4 is focused by the lens 14 onto the photodetecting surface 22 of the two-dimensional position detector 20. The two-dimensional 4 outputs from the terminals 24a-24d of the detector 20 are converted to the signal indicating the photodetecting position by a position detecting circuit 26. The converted signal is applied to an arithmetic part 30 by which the signal is compared with the value in the absence of the inclination of the wafer 4 and is calculated as the angle of inclination.

9. 发明专利

JPH05234946A 失效
公开(公告)号：JPH05234946A
公开(公告)日：1993-09-10
申请号：JP3232992
申请日：1992-02-19
申请人： TOKYO ELECTRON LTD
发明人： ARAKI YOICHI , MOCHIZUKI SHUJI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/50
摘要： PURPOSE:To obtain an equipment wherein plasma treatment is enabled with high efficiency, the equipment is simplified, the number of parts can be reduced, and miniaturization is possible, by installing a linkage part which links a plasma generating chamber with a reaction chamber and has an anode electrode and an electron acceleration electrode, and winding a solenoid around the electrodes. CONSTITUTION:The title equipment is provided with the following; a plasma generating chamber 24 which turns gas G1 introduced into a space surrounded by a cathode electrode 28 for discharge into plasma, a reaction chamber 26 which turns reaction gas G2 into plasma by irradiation of electrons led out from plasma and treats an object 7 to be treated, and a linkage part 25 which links the plasma generating chamber 24 with a reaction chamber 26 and is equipped with an anode electrode 40 and an electron acceleration electrode 42. A solenoid 43 is wound around the electrodes. For example, a solenoid 43 is wound around the outside of the linkage part 25, or the solenoid is divided into two parts, and wound around the outside of the anode electrode 40 and the outside of the electron acceleration electrode 42.

10. 发明专利

JPH04326725A PLASMA APPARATUS 失效
公开(公告)号：JPH04326725A
公开(公告)日：1992-11-16
申请号：JP12287891
申请日：1991-04-26
申请人： TOKYO ELECTRON LTD
发明人： NAGASEKI KAZUYA , MOCHIZUKI SHUJI
IPC分类号： H01L21/302 , H01J37/32 , H01L21/31 , H05H1/50
摘要： PURPOSE:To generate a plasma under the low degree of vacuum and to fine process an object to be treated in a plasma apparatus in which the object to be treated is treated with the plasma by generating a plasma atmosphere inside a vacuum treatment chamber. CONSTITUTION:An electron supply chamber 10 is connected to a vacuum treatment chamber 3 via an electron introduction port 8. A filament 11 for electron generation use is installed inside the electron supply chamber 10; electrons which are generated by using the filament 11 are introduced into the vacuum treatment chamber 3 via the electron introduction port 8.

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