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1. 发明专利

JPH07297175A METHOD AND APPARATUS FOR PLASMA TREATMENT 失效
公开(公告)号：JPH07297175A
公开(公告)日：1995-11-10
申请号：JP10604594
申请日：1994-04-20
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： TOMOYASU MASAYUKI , KOSHIISHI AKIRA
IPC分类号： C23C16/50 , C23F4/00 , H01L21/203 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To make the follow-up property of ions in a plasma good, to accelerate the ions with high efficiency even with small power and to make them impinge on an object to be treated such as a semiconductor wafer when conducting a plasma treatment to an object. CONSTITUTION:The frequency of high-frequency electric power which is applied to a susceptor 5 inside a treatment container 2 is set at a frequency which is lower than a lower-end ion transition frequency which is inherent in a treatment gas, and the frequency of high-frequency electric power which is applied to an upper-part electrode 21 is set at a frequency which is higher than an upper-end ion transition frequency which is inherent in the treatment gas. Thereby, the follow-up property of ions in a plasma can be made good.

2. 发明专利

JPH0955374A PLASMA TREATMENT APPARATUS 失效
公开(公告)号：JPH0955374A
公开(公告)日：1997-02-25
申请号：JP14218896
申请日：1996-05-13
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： KOSHIISHI AKIRA , OGASAWARA MASAHIRO , HIROSE KEIZO , NAGASEKI KAZUYA
IPC分类号： H05H1/46 , C23C16/50 , C23C16/509 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To obtain a plasma treatment apparatus by which the diffusion of a plasma is suppressed effectively when a substrate to be treated is treated with the plasma in a plasma atmosphere, by which a highly fine treatment can be executed at a high vacuum degree and a high plasma density and, at the same time, which prevents the inside wall of a treatment container from being sputtered by the plasma. SOLUTION: A lower-side insulator 13 is installed around a susceptor 6 to be used as a lower-part electrode, and an upper-side insulator 31 is installed around an upper-part electrode 21. The outer end part 31a of the upper insulator 31 is situated at the outside of the lower-side insulator 13, and it is situated in a position which is lower than the surface of a wafer W. A narrowest gap L between the lower-side insulator 13 and the upper-side insulator 31 is made narrower than a gap G between the electrodes. Since the diffusion of a plasma generated between the electrodes is suppressed so as not to be diffused to side parts as it is, the inside wall of a treatment container 3 is not sputtered.

3. 发明专利

JPH098010A PLASMA PROCESSOR 失效
公开(公告)号：JPH098010A
公开(公告)日：1997-01-10
申请号：JP17436795
申请日：1995-06-16
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： KOSHIISHI AKIRA , INASAWA KOICHIRO
IPC分类号： C23F4/00 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To obtain a plasma processor which can secure high plasma density while keeping uniformity in the plasma density and also suppressing plasma diffusion. CONSTITUTION: A susceptor 6 and an upper electrode 32 are oppositely provided in a processing container 3, while high frequency power of relatively low frequency is applied from a first high frequency power source 41 to the susceptor 6 and high frequency power of relatively high frequency is applied from a second high frequency power source 44 to the upper electrode 32. A circular antenna 52 is placed via an insulator 51 on an outer periphery of the processing container 3, and high frequency power from a third high frequency power source is applied to the antenna 52. A variable magnetic field B is formed by the antenna 52 around a space where the susceptor 6 and the upper electrode 32 are opposite to each other so that plasma diffusion is suppressed, thereby increasing plasma density. The incident energy of ions in the high density plasma into a wafer W is controlled by high frequency having relatively low frequency.

4. 发明专利

JPH08335568A ETCHING APPARATUS 失效
公开(公告)号：JPH08335568A
公开(公告)日：1996-12-17
申请号：JP16686695
申请日：1995-06-07
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： HIROSE KEIZO , KOSHIISHI AKIRA
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To make it possible to enclose plasma efficiently between electrodes and to give uniform treatment without kindering the exhaust of gases even if the degree of vacuum in the treatment chamber is made higher to execute fine etching at a high speed. CONSTITUTION: A quartz shield ring 42 is provided near an upper electrode 41, and an inner side focus ring 21 of silicon and an outer side focus ring 22 of quartz are provided in the vicinity of a susceptor 6 where a wafer W is placed. A portion between a projected portion 43 of the shield ring 42 and an outer side focus ring 22 is made narrower than a gap between the electrodes, and the projected portion 43 is positioned above the outer side focus ring 22. Diffusion of plasma is prevented by the projected portion 43 and the outer side focus ring 22. Density of plasma is not unreasonably increased in the vicinity of the wafer W since the inner side focus ring 21 is located between them. Thickness of the projected portion 43 is not large, so that the gas conductance is good.

5. 发明专利

JPH08264515A PLASMA TREATMENT DEVICE, PROCESSING DEVICE AND ETCHING DEVICE 失效
公开(公告)号：JPH08264515A
公开(公告)日：1996-10-11
申请号：JP12086995
申请日：1995-04-20
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： IMAFUKU KOSUKE , ENDOU SHIYOUSUKE , TAWARA KAZUHIRO , TSUCHIYA HIROSHI , TOMOYASU MASAYUKI , NAITO YUKIO , NAGASEKI KAZUYA , NONAKA TATSU , HIROSE KEIZO , FUKAZAWA YOSHIO , KOSHIISHI AKIRA , KOBAYASHI ISAO
IPC分类号： H05H1/46 , C23C16/507 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To perform fine working on a subject to be treatment by preventing diffusion of plasma generated between counter electrodes and improving plasma density. CONSTITUTION: High-frequency from a high-frequency power source 51 is applied on a top electrode 21, and the high-frequency from a high-frequency power source 52 is applied on a susceptor 5. In the vicinity of the circumference of the top electrode 21, an almost cylinder-shaped grounding electrode 27 is provided so as to surround the space between the electrodes. Each high-frequency power source is controlled by a phase controller 57, and high-frequencies with 180 deg. different current phases are applied to the top electrode 21 and the susceptor 5, respectively.

6. 发明专利

JPH098009A PLASMA PROCESSOR 失效
公开(公告)号：JPH098009A
公开(公告)日：1997-01-10
申请号：JP17436695
申请日：1995-06-16
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： KOSHIISHI AKIRA , INASAWA KOICHIRO , ARAKI YOICHI
IPC分类号： C23F4/00 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To obtain a plasma processor which can secure high plasma density while keeping uniformity in the plasma density and also suppressing plasma diffusion. CONSTITUTION: A susceptor 6 and an upper electrode 32 are oppositely provided in a processing container 3, while high frequency power of relatively low frequency is applied from a first high frequency power source 41 to the susceptor 6 and high frequency power of relatively high frequency is applied from a second high frequency power source 44 to the upper electrode 32. Coils 51, 52 of a double coil structure for forming magnetic fields having polarities reverse to each other are placed above and below and outer periphery of the processing container 3. Plasma in the processing container is confined by a magnetic field wall having an approximate spindle-like shape to have plasma density increased. Since little magnetic field exists on a wafer, uniformity of the plasma density is good.

7. 发明专利

JP2013191857A Plasma processing device and plasma processing method, and computer readable storage medium 有权
标题翻译：等离子体处理装置和等离子体处理方法以及计算机可读存储介质
公开(公告)号：JP2013191857A
公开(公告)日：2013-09-26
申请号：JP2013089519
申请日：2013-04-22
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KOSHIISHI AKIRA , SUGIMOTO MASARU , HIUGA KUNIHIKO , KOBAYASHI NORIYUKI , KOSHIMIZU CHISHIO , OTANI RYUJI , KIBI KAZUO , SAITO MASASHI , MATSUMOTO NAOKI , OYA YOSHINOBU , IWATA MANABU , YANO DAISUKE , YAMAZAWA YOHEI , HANAOKA HIDETOSHI , HAYAMIZU TOSHIYASU , YAMAZAKI HIROKI , SATO MANABU
IPC分类号： H01L21/3065 , C23C16/509 , C23C16/517 , H01J37/32 , H01L21/311 , H05H1/46
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32165 , H01J37/32532 , H01J2237/3342 , H01L21/31138
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing device capable of effectively preventing deposit from adhering to a chamber inner member such as a chamber inner wall and an insulator.SOLUTION: A plasma processing device for performing plasma etching by supplying a processing gas to be plasma into a chamber 10 comprises: an upper electrode 34 and a lower electrode 16 for supporting a wafer which are arranged so as to face each other in the chamber 10; a third high-frequency power supply 224 (first high-frequency power application unit) which is connected to the upper electrode 34 for applying high-frequency power for plasma formation; a first high-frequency power supply 89 and second high-frequency power supply 90 (second high-frequency power application unit and third high-frequency power application unit) which are connected to the lower electrode 16 for outputting high-frequency power for ion attraction; and a variable DC power supply 50 connected to the upper electrode 34.
摘要翻译：要解决的问题：提供一种等离子体处理装置，其能够有效地防止沉积物附着到诸如室内壁和绝缘体的室内部构件。解决方案：一种等离子体处理装置，用于通过将处理气体供给来进行等离子体蚀刻等离子体进入腔室10包括：用于支撑晶片的上电极34和下电极16，其布置成在腔室10中彼此面对; 连接到用于施加用于等离子体形成的高频电力的上电极34的第三高频电源224（第一高频电源施加单元）连接到下电极16的第一高频电源89和第二高频电源90（第二高频电力施加单元和第三高频电力施加单元），用于输出用于离子吸引的高频电力 ; 以及连接到上电极34的可变直流电源50。

8. 发明专利

JP2013168690A Plasma processing apparatus, focus ring, and focus ring component 有权
标题翻译：等离子体加工设备，聚焦环和聚焦环组件
公开(公告)号：JP2013168690A
公开(公告)日：2013-08-29
申请号：JP2013119621
申请日：2013-06-06
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KOSHIISHI AKIRA
IPC分类号： H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To suppress the occurence of deposition on a lower surface in a peripheral part when plasma processing is performed to a processed substrate such as a semiconductor wafer.SOLUTION: A plasma processing apparatus includes a focus ring 25 disposed so as to enclose a periphery of a processed substrate W placed on a placement base 11, and the focus ring 25 includes: an outer ring part 30 disposed at the outer side of the periphery of the processed substrate W placed on the placement base 11 and made of a conductive material; and an inner ring part 31 disposed below a peripheral part of the processed substrate W placed on the placement base 11 so as to be spaced a predetermined distance away from the peripheral part and made of a conductive material. An insulation member 26 electrically insulates the inner ring part 31 from the placement base 11. A second conductive member 60 electrically connecting with a ground 22 is placed close to the outer ring part 30 insulated from the placement base 11 by the insulation member 26, and a second insulation member 61 is provided between the outer ring part 30 and the second conductive member 60.
摘要翻译：要解决的问题：为了抑制对诸如半导体晶片的处理基板进行等离子体处理时在周边部分的下表面上的沉积的发生。解决方案：等离子体处理装置包括聚焦环25，该聚焦环25被设置成包围处理基板W的周边配置在配置基板11上，聚焦环25包括：外圈部30，其设置在被配置在基板11上的被处理基板W的周边的外侧，材料; 以及设置在被放置基板11的被处理基板W的周边部分的下方的内环部分31，以便与周边部分隔开预定距离并由导电材料制成。绝缘构件26将内环部分31与放置基座11电绝缘。与地面22电连接的第二导电构件60通过绝缘构件26放置在与放置基座11绝缘的外环部分30附近，并且在外圈部件30和第二导电部件60之间设置有第二绝缘部件61。

9. 发明专利

JP2008042117A Mounting table for plasma treatment equipment and plasma treatment equipment 有权
标题翻译：等离子体处理设备和等离子体处理设备的安装表
公开(公告)号：JP2008042117A
公开(公告)日：2008-02-21
申请号：JP2006217873
申请日：2006-08-10
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KOSHIISHI AKIRA , HIMORI SHINJI , MATSUYAMA SHOICHIRO
IPC分类号： H01L21/3065 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a mounting table for plasma treatment equipment in which in-plane uniformity in the plasma treatment of a substrate can be enhanced, and to provide plasma treatment equipment equipped with the mounting table. SOLUTION: The mounting table 2 for the plasma treatment equipment 1 comprises a conductor member also serving as a lower electrode 21 for plasma generation; a lower dielectric layer 22 (first dielectric layer) provided to cover the central part of the upper surface of the conductor member, and equalizing a high frequency electric field applied to plasma through a substrate to be treated; and an upper dielectric layer 24 (second dielectric layer) formed in contact with at least the peripheral portion of the substrate on the conductor member in order to suppress an escape of a high frequency current propagating on the surface of the conductor member to the outside of the substrate to be treated (wafer W) and having a dielectric constant of 100 or higher. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于等离子体处理设备的安装台，其中可以提高基板的等离子体处理中的面内均匀性，并提供配备有安装台的等离子体处理设备。解决方案：用于等离子体处理设备1的安装台2包括还用作等离子体产生的下电极21的导体部件; 设置为覆盖导体构件的上表面的中心部分的下介电层22（第一电介质层），并且通过待处理的基板均衡施加到等离子体的高频电场; 以及形成为与导体部件上的基板的至少周边部分接触的上介电层24（第二电介质层），以便抑制在导体部件的表面上传播的高频电流逸出到要处理的基板（晶片W）并且具有100或更高的介电常数。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2006286813A Apparatus and method for plasma treatment 有权
标题翻译：用于血浆处理的装置和方法
公开(公告)号：JP2006286813A
公开(公告)日：2006-10-19
申请号：JP2005102953
申请日：2005-03-31
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUMOTO NAOKI , KOSHIMIZU CHISHIO , KOSHIISHI AKIRA
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H01J37/32091 , H01J37/32532
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus and a plasma treatment method capable of easily ensuring uniformity in plasma without depending on the state of the plasma. SOLUTION: A plasma etching apparatus generates plasma of a processing gas between an upper electrode 34 and a lower electrode 16 to apply plasma etching to a wafer W. In this apparatus, a high-frequency power source 48 and a variable DC power source 50 are connected to the upper electrode 34, and the upper electrode 34 has an external portion 36a and an internal portion 36b. A high-frequency current from the high-frequency power source 48 flows through both the external portion 36a and the internal portion 36b, a DC current from the power source 50 flows through the internal portion 36a, but does not flow through the external portion 36b substantially. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供能够容易地确保等离子体的均匀性而不依赖于等离子体的状态的等离子体处理装置和等离子体处理方法。解决方案：等离子体蚀刻装置在上电极34和下电极16之间产生处理气体的等离子体，以对晶片W施加等离子体蚀刻。在该装置中，高频电源48和可变直流电源源极50连接到上电极34，上电极34具有外部部分36a和内部部分36b。来自高频电源48的高频电流流过外部36a和内部部分36b，来自电源50的直流电流流过内部部分36a，但不流过外部部分36b 基本上。版权所有（C）2007，JPO＆INPIT

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