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1. 发明专利

JPH06330357A DRY ETCHING DEVICE FOR PHOTOMASK 失效
公开(公告)号：JPH06330357A
公开(公告)日：1994-11-29
申请号：JP12413793
申请日：1993-05-26
申请人： MITSUBISHI ELECTRIC CORP , ULVAC SEIMAKU KK
发明人： YOSHIOKA NOBUYUKI , AOYAMA SATORU , HANAZAKI MINORU , TOKU AKIHIKO , TOKORO YASUO , OZAKI TOSHIHARU
IPC分类号： C23F4/00 , G03F1/68 , G03F1/80 , G03F1/08
摘要： PURPOSE:To enable uniform etching by avoiding influence of magnetic field on the peripheral equipments in a dry etching device for photomask and also increasing magnetic strength and elevating the symmetry of the magnetic field, and to manufacture a photomask with high accuracy. CONSTITUTION:In the dry etching device for photomask provided with two pairs of electromagnets 4, 5 generating rotating magnetic field through the etching room which is surrounded with a magnetic shielding body and provided with a transfer port of the photomask, a magnetic field correcting member 17 with high permeability is provided in the vicinity 10 of the transfer port of the substrate in the etching room 1.

2. 发明专利

JP2004228460A Plasma processing apparatus and measuring method for high-frequency characteristics thereof 有权
标题翻译：等离子体加工设备及其高频特性的测量方法
公开(公告)号：JP2004228460A
公开(公告)日：2004-08-12
申请号：JP2003017002
申请日：2003-01-27
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TAKI MASAKAZU , TSUDA MUTSUMI , SHINTANI KENJI , HANAZAKI MINORU , SUGAWARA KEIICHI
IPC分类号： H05H1/00 , B01J19/08 , C23C16/505 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To obtain a plasma processing apparatus which accurately measures high-frequency characteristics, especially of accurately measuring high-frequency characteristics during the generation of plasma. SOLUTION: The plasma processing apparatus includes: a high-frequency power source, supplying high frequency electric power to electrodes arranged in a treatment chamber; a directional coupler inserted between transmission lines connecting the electrodes and the high-frequency power source so as to transmit the high-frequency electric power; a variable frequency generator that is connected to terminals combining terminals, which are connected to the electrodes of the directional coupler, and applies a high-frequency signal having a desired frequency to the electrodes; and a high-frequency characteristic detector that is connected to terminals combining terminals, which are connected to the electrodes of the directional coupler and measures the reflected waves, having high-frequency signals from the electrodes applied by the variable frequency generator. COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：为了获得准确测量高频特性的等离子体处理装置，特别是在等离子体产生期间精确地测量高频特性。解决方案：等离子体处理设备包括：高频电源，为布置在处理室中的电极提供高频电力; 插入在连接电极和高频电源的传输线之间以便传输高频电力的定向耦合器; 连接到与定向耦合器的电极连接的端子组合端子的可变频率发生器，并向电极施加具有期望频率的高频信号; 以及连接到与定向耦合器的电极连接并测量反射波的端子组合端子的高频特性检测器，其具有来自可变频率发生器施加的电极的高频信号。版权所有（C）2004，JPO＆NCIPI

3. 发明专利

JP2003086574A METHOD AND APPARATUS FOR ANALYZING GAS OF SEMICONDUCTOR TREATMENT UNIT 审中-公开
公开(公告)号：JP2003086574A
公开(公告)日：2003-03-20
申请号：JP2001271440
申请日：2001-09-07
申请人： MITSUBISHI ELECTRIC CORP , MITSUBISHI ELECTRIC ENG
发明人： HANAZAKI MINORU , ONO TOSHIKI
IPC分类号： G01N21/73 , G01N21/68 , G01N33/00 , H01J37/32 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for analyzing the gas of a semiconductor treatment unit which is improved for monitoring leakage or a change of a gas composition in-situ which exerts influence on treatment characteristics of the semiconductor treatment unit. SOLUTION: The apparatus for analyzing the gas of the semiconductor treatment unit comprises a duct 7 for removing gas in a chamber on the outer wall of the chamber of the semiconductor treatment unit 100. The analyzing gas removed from the duct 7 is contained in a gas analysis chamber 5. The apparatus further comprises a discharge generator 1 mounted near the chamber 5. The generator 1 has a high-frequency wave generating coil 3 for generating a high-frequency wave to form plasma of the analyzing gas in the chamber 5. The apparatus also comprises an analyzer for analyzing the emission beam wavelength of the plasma of the gas.

4. 发明专利

JPH01244619A PLASMA DRY ETCHING PROCESS 失效
公开(公告)号：JPH01244619A
公开(公告)日：1989-09-29
申请号：JP7272688
申请日：1988-03-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： ONO KOICHI , HANAZAKI MINORU , FUJITA SHIGETO , OMORI TATSUO
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To achieve high selectivity of etching without selecting a mixing ratio of etching gas, by changing a distance between a pair of parallel plate electrodes to which a high-frequency power is applied, in order to select appropri ate composition of active species in high-frequency glow discharge. CONSTITUTION:A substrate to be etched 1 is mounted on a first electrode 2 in a vessel 4. A second electrode 2 is moved vertically to regulate a distance between the first and second electrodes. Then, the vessel 4 is evacuated by an evacuating means 5. Subsequently, flow rates of carbon tetrachloride gas, oxygen gas and helium gas are regulated properly and, further, pressure of mixture of these gases within the vessel 4 is set properly. High-frequency power is applied between the first and second electrodes 2 and 3 by a high-frequency power applying means 6, whereby the gaseous mixture of carbon tetrachloride, oxygen and helium is ionized to produce plasma by high-frequency glow dis charge. A material on the substrate 1 is etched by neutral atoms or atomic ions of carbon, chlorine and oxygen, or neutral molecules or molecular ions produced by combination thereof.

5. 发明专利

JPS63314834A PLASMA PROCESSING EQUIPMENT 失效
公开(公告)号：JPS63314834A
公开(公告)日：1988-12-22
申请号：JP15015387
申请日：1987-06-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： MINAMI TOSHIHIKO , ODERA HIROKI , HANAZAKI MINORU
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/46
摘要： PURPOSE:To restrain the tube-wall sputtering, and increase the plasma processing speed for a substrate, by arranging a superconductor around a plasma reaction part in a plasma processing equipment for substrates in which electron cyclotron resonance is employed. CONSTITUTION:A plasma generating part 1 comprises a high frequency waveguide 7, a plasma generating glass tube 2 and a solenoid coil 4 connected to a DC power source 3. High frequency power is supplied to the waveguide 7 from a magnetron 9, and gas is supplied to the glass tube 2 through a gas supplying tube 10. Plasma is generated by electron cyclotron resonance. Around a plasma reaction part 11, a cooling vessel 21 is installed, which includes a high temperature superconductor 20 and a superconductor 20, and fixed to the periphery of the reaction part 11. When the vessel is filled with liquid nitro gen and the superconductor 20 is cooled at a temperature lower than or equal to the transition temperature, the superconductor 20 exhibits perfect diamagnet ism. Magnetic flux 16 generated by a coil 4 converges in the vicinity of a sub strate 13 in the reaction part 11. Thereby, the tube-wall sputtering is restrained and the high speed processing is enabled.

6. 发明专利

JPS6365623A PLASMA PROCESSOR 失效
公开(公告)号：JPS6365623A
公开(公告)日：1988-03-24
申请号：JP20983586
申请日：1986-09-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： NAKANISHI KOICHIRO , HANAZAKI MINORU , ODERA HIROKI
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To enable the even plasma processing to be performed with high precision with electronic cyclotron resonance extending over wide region to produce plasma within wide range by a method wherein a magnet producing a magnetic field in a plasma producer is supplied with current of DC + AC. CONSTITUTION:A plasma producer 1 is equipped with a magnet 7 producing a magnetic field changing unevenly par hour and periodically in the axial direction, a high-frequency waveguide 4 leading a high-frequency electric field perpendicular to the axial direction and a plasma producing glass tube 11. The high-frequency waveguide 4 is supplied with high-frequency power through a magnetron 5 while the plasma producing glass tube 11 is supplied with gas through a gas feeder pipe 9. The magnet 7 is supplied with current of DC + AC from a power supply 13 supplying current of DC + Ac so that the current may be changed periodically corresponding to the cycle of AC from the line connecting points A' to B' and A' to B' centered on the AB line connecting points A to B by means of properly adjusting the levels of DC and AC.

7. 发明专利

JP2003282542A Plasma treatment apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：JP2003282542A
公开(公告)日：2003-10-03
申请号：JP2002083681
申请日：2002-03-25
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HANAZAKI MINORU , SUGAWARA KEIICHI , TAKI MASAKAZU , TSUDA MUTSUMI , SHINTANI KENJI , NOGUCHI TOSHIHIKO , YONEMURA TOSHIO
IPC分类号： H05H1/00 , H01J37/32 , H01L21/3065 , H05H1/46
CPC分类号： H01J37/32082 , H01J37/32935
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus which detects its apparatus- specific high-frequency characteristics for evaluating its process capability based on the detected high-frequency characteristics.
SOLUTION: A high-frequency current detector 11 of the plasma treatment apparatus 100 detects a high-frequency current generated when high-frequency power that does not generate plasma in a chamber 1 is fed to the chamber 1 by a high-frequency power source 10, and outputs the detected high-frequency current to a computer 12. The computer 12 compares the high-frequency current received from the high-frequency current detector 11 with a reference high-frequency current. If both the high-frequency currents agree with each other, the process performance of the plasma treatment apparatus 100 is evaluated as being normal, but if the both do not agree, the process performance is evaluated to be abnormal.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种等离子体处理装置，其基于检测到的高频特性来检测其设备特定的高频特性以评估其处理能力。解决方案：等离子体处理装置100的高频电流检测器11检测在室1中不产生等离子体的高频电力通过高频率被供给到室1时产生的高频电流电源10，并将检测到的高频电流输出到计算机12.计算机12将从高频电流检测器11接收的高频电流与参考高频电流进行比较。如果两个高频电流彼此一致，则等离子体处理装置100的处理性能被评价为正常，但是如果两者不一致，则评估处理性能是异常的。版权所有（C）2004，JPO

8. 发明专利

JP2000031252A SEMICONDUCTOR MANUFACTURE DEVICE WITH ELECTROSTATIC CHUCK AND WAFER REMOVAL METHOD THERE FROM 失效
公开(公告)号：JP2000031252A
公开(公告)日：2000-01-28
申请号：JP19301198
申请日：1998-07-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： IKEDA TAKETOSHI , TSUKASAKI TAKASHI , DOBASHI YUUSUKE , HANAZAKI MINORU
IPC分类号： B23Q3/15 , H01L21/68 , H01L21/683 , H02N13/00
摘要： PROBLEM TO BE SOLVED: To prevent offset of a wafer, wafer breakage, etc., and reduce reduction of producibility, by detecting the thickness of an oxide film of a wafer rear before wafer treatment, and removing a wafer by applying a series of voltage sequence to an electrostatic chuck after treatment. SOLUTION: The thickness of a wafer rear oxide film 6 attaching to a rear of a wafer 1 is measured by an optical sensor 10, while the wafer 1 is attracted to an electrostatic chuck 2 and plasma which is specified treatment is generated. High frequency power is supplied to the electrostatic chuck 2 attracting the wafer 1, plasma is generated between the electrostatic chuck 2 and an grounding electrode 32, and a wafer is attracted to the electrostatic chuck 2. After a specified time passed and treatment is finished, high frequency voltage applied to the electrostatic chuck 2 is released and plasma is extinguished. Thereafter, voltage for removal according to the thickness of the wafer rear oxide film 6 attaching to a wafer rear is applied to the electrostatic chuck 2.

9. 发明专利

JPH06151383A METHOD OF ETCHING HIGH-PERMITTIVITY MULTICOMPONENT OXIDE FILM AND REFRACTORY METAL FILM, MANUFACTURE OF THIN-FILM CAPACITOR, AND PLASMA APPARATUS FOR FILM FORMATION 失效
公开(公告)号：JPH06151383A
公开(公告)日：1994-05-31
申请号：JP30270392
申请日：1992-11-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： HANAZAKI MINORU , KUSUMI YOSHIHIRO , NANBA TAKANORI , FUJIWARA NOBUO , OKUDAIRA TOMOHITO , ITO HIROMI
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108
摘要： PURPOSE:To obtain an etching method in which a high-permittivity multicomponent oxide film and refractory metal or metal compound, having a high selectivity relative to a mask can be processed by etching the multicomponent oxide film using, as an etching gas, an organic gas which produces a volatile organic metal. CONSTITUTION:Methane (CH4) that is a hydrocarbon gas is supplied to the inside of a processing chamber 5 at a rate of 500cc per minute at a gas pressure of 3mTorr. A high frequency of 13.56MHz is applied from a high frequency power source 10 at 1000W, and a magnetic field having 200G is generated by causing a current to flow through a coil 11, whereby the combination of the high frequency and the magnetic field induces a magnetron discharge to produce plasma. A PbLaZrTiO3 film 3 of the multicomponent oxide film having a high dielectric constant is etched by the plasma. At this time, the temperature of electrodes is controlled to a constant temperature, and the temperature of a wafer is 150 deg.C immediately after the completion of the etching.

10. 发明专利

JPH0626195B2 失效
公开(公告)号：JPH0626195B2
公开(公告)日：1994-04-06
申请号：JP8386587
申请日：1987-04-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： MINAMI TOSHIHIKO , NAKANISHI KOICHIRO , OODERA HIROKI , HANAZAKI MINORU
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065 , H01L21/31

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