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1. 发明专利

JP2009158745A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2009158745A
公开(公告)日：2009-07-16
申请号：JP2007335698
申请日：2007-12-27
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TARUI YOICHIRO , OTSUKA KENICHI , SUZUKI YOSUKE , SHIOZAWA KATSUOMI , KANEMOTO KYOZO , OISHI TOSHIYUKI , TOKUDA YASUKI , OMORI TATSUO
IPC分类号： H01L21/28 , H01S5/323
CPC分类号： H01L21/28575 , H01L29/2003 , H01L33/0095 , H01L33/32 , H01L33/40
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can reduce the contact resistance of an ohmic electrode to a p-type nitride semiconductor layer, and can achieve long-term stable operation.
SOLUTION: In an electrode forming step, in forming a p-type ohmic electrode composed of a metal film comprising a Pd film and a Ta film by successive lamination of the Pd film which is a first p-type ohmic electrode 10 and the Ta film which is a second p-type ohmic electrode 11 on a p-type GaN contact layer 7, the metal film is formed to include an oxygen atom. Thus, in the presence of an oxygen atom in the metal film, then in a heat-treatment step, the p-type ohmic electrode composed of the metal film is heat-treated in an atmosphere that contains no oxygen atom-containing gas.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以将欧姆电极的接触电阻降低到p型氮化物半导体层的半导体器件的制造方法，并且可以实现长期稳定的操作。解决方案：在电极形成步骤中，通过连续层压作为第一p型欧姆电极10的Pd膜和形成由Pd膜和Ta膜构成的金属膜的p型欧姆电极，作为p型GaN接触层7上的第二p型欧姆电极11的Ta膜，形成包含氧原子的金属膜。因此，在金属膜中存在氧原子的情况下，在热处理工序中，将由金属膜构成的p型欧姆电极在不含氧原子气体的气氛中进行热处理。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2009016530A Silicon carbide field effect transistor and its manufacturing method 有权
标题翻译：碳化钨场效应晶体管及其制造方法
公开(公告)号：JP2009016530A
公开(公告)日：2009-01-22
申请号：JP2007176089
申请日：2007-07-04
申请人： Mitsubishi Electric Corp , Tokyo Institute Of Technology , 三菱電機株式会社 , 国立大学法人東京工業大学
发明人： MIURA NARIHISA , OMORI TATSUO , TOKUMITSU EISUKE , HINO SHIRO , HATAYAMA TOMOHIRO
IPC分类号： H01L29/12 , H01L21/336 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide an excellent interface between a gate insulating film and a silicon carbide semiconductor in a silicon carbide field effect transistor.
SOLUTION: The gate insulating film 4 includes a structure of a silicon oxide 11 whose film thickness is ≤1 nm and a deposition insulating film 12 of aluminum oxide or the like laminate on the surface of the silicon oxide 11. Preferably, the film thickness of the silicon oxide 11 is a value within the range from 0.3 to 0.9 nm. Also, after laminating the deposition insulating film 12, the silicon carbide field effect transistor may be thermally treated in an inert gas or a nitrogen monoxide gas at a temperature higher than a film forming temperature.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了在碳化硅场效应晶体管中提供栅极绝缘膜和碳化硅半导体之间的良好界面。
解决方案：栅极绝缘膜4包括膜厚度为1nm的氧化硅11和氧化硅11的表面上的氧化铝等的淀积绝缘膜12的结构。优选地，氧化硅11的膜厚为0.3〜0.9nm的范围。此外，在层压沉积绝缘膜12之后，碳化硅场效应晶体管可以在高于成膜温度的温度下在惰性气体或一氧化氮气体中进行热处理。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2005086685A Electronic equipment utilizing uwb communication 审中-公开
标题翻译：电子设备利用UWB通信
公开(公告)号：JP2005086685A
公开(公告)日：2005-03-31
申请号：JP2003318742
申请日：2003-09-10
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MURAKAMI TAKAAKI , FURUKAWA AKIHIKO , TOMIZAWA ATSUSHI , OMORI TATSUO
IPC分类号： H04B1/38
摘要： PROBLEM TO BE SOLVED: To enable devices arranged inside a case to communicate one another by UWB technique without being affected by structure inside the case in electronic equipment, such as a personal computer.
SOLUTION: The electronic equipment comprises: a first UWB communication chip set 31 including a first antenna 312; a second UWB communication chip set 32 including a second antenna 322; and the case 6 for UWB communication that is a case for allowing the inside space to be continuously, electromagnetically isolated from the periphery. The first and second antennas 312, 322 are arranged so that they perform UWB communication each other via the inside space of the case 6 for UWB communication.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：使得布置在壳体内的装置能够通过UWB技术彼此通信而不受诸如个人计算机之类的电子设备中的壳体内的结构的影响。电子设备包括：包括第一天线312的第一UWB通信芯片组31; 包括第二天线322的第二UWB通信芯片组32; 以及用于允许内部空间连续地与外围电磁隔离的情况的用于UWB通信的情况6。第一和第二天线312,322被布置成使得它们经由用于UWB通信的壳体6的内部空间来执行UWB通信。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JPH0579981A MEASURING METHOD FOR CHLORINE ATOM CONCENTRATION 失效
公开(公告)号：JPH0579981A
公开(公告)日：1993-03-30
申请号：JP24300191
申请日：1991-09-24
申请人： MITSUBISHI ELECTRIC CORP
发明人： ONO KOUICHI , OMORI TATSUO , TSUDA MUTSUMI
IPC分类号： G01N21/64 , H01L21/66
摘要： PURPOSE:To provide the measuring method capable of measuring the absolute value of the fluorescence intensity and comparing the chlorine atom concentration in multiple plasma processing devices in the measurement of the chlorine atom concentration in the plasma processing devices. CONSTITUTION:A pulse laser beam in the wavelength region of 230-245 nm is radiated into a plasma processing device 1 generated with chlorine gas plasma, chlorine atoms in the ground state are two-photon resonance-excited, and the fluorescence in the wavelength region of 725-990nm from the excited chlorine atoms is detected. Carbon tetrachloride gas is guided into the plasma processing device 1 while an excitation source is stopped, the fluorescence of chlorine atoms is excited and detected with the laser beam, and laser-induced fluorescence intensity the chlorine atoms is compared between two cases for chlorine gas plasma and the carbon tetrachloride gas.

5. 发明专利

JPH02301940A ION SOURCE 失效
公开(公告)号：JPH02301940A
公开(公告)日：1990-12-14
申请号：JP12305989
申请日：1989-05-17
申请人： MITSUBISHI ELECTRIC CORP
发明人： ONO KOICHI , OMORI TATSUO
IPC分类号： H01J27/08 , H01J27/20 , H01J37/08
摘要： PURPOSE:To make it possible to apply the generation of low energy ion beams and convergent ion beams to ultra high brightness ion beams by extracting ion current from the super-sonic molecule flow of plasma obtained from super- sonic expansion taking a place when plasma generated in a discharge chamber is introduced into a vacuum chamber. CONSTITUTION:Plasma composed of specimen gas B generated in a discharge chamber 1 and of carrier gas A, flows out into the first vacuum chamber 22 through a nozzle 26 so as to be super-sonically expanded so that the super-sonic free jet steam D of plasma is thereby formed. In the second place, a section close to the center axis of the super-sonic free jet stream D of plasma in a region of stillness is extracted out as super-sonic molecule flow E into the second vacuum chamber 23 by means of a skimmer 28 provided for the first bulkhead 27. The super-sonic molecule flow E passes through a collimator 30 provided for the second bulkhead 29 so as to flow in the third vacuum chamber 24. Plasma ions are extracted as ion current F out of an electric hole 8 while being accelerated to the direction of an electrode 7 by means of the electric field applied between the collimator 30 and the electrode 7.

6. 发明专利

JPS6460926A MANUFACTURE OF OXIDE SUPERCONDUCTIVE THIN FILM 失效
公开(公告)号：JPS6460926A
公开(公告)日：1989-03-08
申请号：JP21889087
申请日：1987-08-31
申请人： MITSUBISHI ELECTRIC CORP
发明人： ONO KOICHI , OMORI TATSUO , FUJITA SHIGETO
IPC分类号： H01B12/06 , C30B29/22 , H01B13/00 , H01L39/24
摘要： PURPOSE:To enhance the thin film growing speed by introducing a test gas containing powder of oxide superconductive component material in plasma, and by spraying the plasma having gasified oxide superconductive component material to the base board. CONSTITUTION:Vacuum exhaust is made from a vacuum draw hole 7, and a gas 8, for ex. argon gas, is introduced to a discharge chamber 1 from a main gas lead-in hole 6, and a DC voltage is impressed between a cathode 2 and an intermediate electrode 10. This gas is electrolytically dissociated by glow discharge or arc discharge generated between the cathode 2 and intermediate electrode 10 and turned into plasma. It passes through an intermediate electrode hole 11 and flows into the space between the intermediate electrode 10 and anode 4. Test gases 16-18 containing component material powder for oxide superconductor, for ex. lanthanum oxide, and argon gas to carry it are led in from test gas lead-in holes 13-15. The gases become plasma, and the powder is gasified. This mixed plasma flows into a vacuum chamber 12, and electrolytic dissociated gas jet 19 is formed. An oxide superconductive thin film is grown on a base board arranged oppositely.

7. 发明专利

JPS63252300A ELECTRON-BEAM TRANSPORTER 失效
公开(公告)号：JPS63252300A
公开(公告)日：1988-10-19
申请号：JP8576087
申请日：1987-04-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： ONO KOICHI , OMORI TATSUO , FUJITA SHIGETO
IPC分类号： G21K1/00 , H01J3/02 , H01J23/06 , H01J37/06

8. 发明专利

JPS62250644A DETECTOR FOR END POINT PLASMA ASHING 失效
公开(公告)号：JPS62250644A
公开(公告)日：1987-10-31
申请号：JP9432186
申请日：1986-04-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： OMORI TATSUO , ONO KOICHI , FUJITA SHIGETO
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To detect the end point of ashing precisely and stably by detecting the intensity of light of at least two or more of spectral lines in transition light within a specific wave range from 0H (hydroxyl group molecule) in plasma and comparing the intensity of these light. CONSTITUTION:In a plasma ashing end-point detector, the angle of rotation of a diffraotion grating 15 is changed and some spectral line in SIGMA - pi transition light within the range of wavelengths 306-316nm from OH is extracted, the spectral line is projected to a photo multiplier 17, the intensity of light of the spectral line is converted into electric signals, and the maximum value Ia of the electric signals is memorized temporarily in a detector 13. The diffraction grating 15 is turned, another spectral line is selected similarly, and the maximum value Ib of the spectral line is memoriz ed into the detector 13. The rotational temprature of plasma is obtained from the ratio of the intensity of these two maximum values, and the variation of a rotational temperature in the vicinity of an organic film and the rotational temperature of a plasma region in the vicinity of an electrode is compared from the alteration of the rotational temperature of plasma or by mounting two monochromators 14, thus detecting the end point of ashing.

9. 发明专利

JPS62250640A DETECTOR FOR END POINT OF PLASMA ASHING 失效
公开(公告)号：JPS62250640A
公开(公告)日：1987-10-31
申请号：JP9432086
申请日：1986-04-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： OMORI TATSUO , ONO KOICHI , FUJITA SHIGETO
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To detect the end point of ashing precisely and stably by detecting the intensity of light of at least two or more of spectral lines in transition light within a specific wave range from C0 in plasma and comparing the intensity of these lights. CONSTITUTION:The angle of rotation of a diffraction grating is changed and some spectral line in b SIGMA-a pi transition light within the range of wavelengths 296-300nm from CO is extracted, and the spectral line is projected to a photomultiplier 17, the intensity of light is converted into electric signals, and the maximum value of the electric signals is memorized temporarily in a detector 13. The diffraction grating 15 is turned, another spectral line is selected similarly, and the maximum value of the spectral line is memorized to the detector 13. The rotational temperature of plasma is obtained from the ratio of the intensity of these two maximum values, and the variation of a rotational temperature in the vicinity of an organic film and the rotational temperature of a plasma region in the vicinity of an electrode is compared from the alteration of the rotational temperature of plasma or by mounting two monochromators 14, thus detecting the end point of ashing. Accordingly, the adjustment of the detector by the change of the conditions of ashing is unnecessitated, thus stably detecting the end point of ashing accurately.

10. 发明专利

JPS6217935A ION SOURCE 失效
公开(公告)号：JPS6217935A
公开(公告)日：1987-01-26
申请号：JP15657085
申请日：1985-07-15
申请人： MITSUBISHI ELECTRIC CORP
发明人： ONO KOICHI , OMORI TATSUO , FUJITA SHIGETO
IPC分类号： H01J27/02 , H01J37/08
摘要： PURPOSE:To obtain a gas ion source applicable onto super high brightness ion beam by leading the weakly ionized gas produced from weakly ionized gas producing means through a hole of barrier board into first vacuum chamber than expanding freely with supersonic speed while arranging plural take-out electrodes having a hole at low gas temperature area of said freely expanded flow and taking ion flow into second vacuum chamber. CONSTITUTION:Ion source is provided with discharge chamber 1 and vacuum chambers 2, 3. The vacuum chamber 2 is maintained at higher vacuum than the discharge chamber 1 while the vacuum chamber 3 is maintained at higher vacuum than the vacuum chamber 2. The discharge chamber 1 is provided with a cathode 4, an intermediate electrode 5 and an anode 6. The intermediate electrode 5 is provided with an intermediate electrode hole 7 while the anode 6 is provided with an anode hole 9. The vacuum chamber 2 will contact through the anode 6 with the discharge chamber 1 while communicate through the anode hole 9 with the discharge chamber 1. Take-out electrodes 14a, 14b for taking out ion flow from weakly ionized freely expanded gas flow formed in the vacuum chamber 2 are arranged between the vacuum chambers 2, 3. The take- out electrodes 14a, 14b are provided with take-out electrode holes 15a, 15b for passing ions.

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