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1. 发明专利

JP2003077979A Carrying device and carrying method of semiconductor wafer 审中-公开
标题翻译：携带设备和实现半导体波形的方法
公开(公告)号：JP2003077979A
公开(公告)日：2003-03-14
申请号：JP2001270157
申请日：2001-09-06
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YAMASHITA TOSHIHIRO , YONEMURA TOSHIO , NOGUCHI TOSHIHIKO
IPC分类号： B65G15/42 , B65G23/26 , B65G49/07 , H01L21/677 , H01L21/68
CPC分类号： H01L21/67706
摘要： PROBLEM TO BE SOLVED: To provide a carrying device capable of preventing lowering of quality of bodies to be carried.
SOLUTION: The carrying device 100 is provided with carrying belts 11 and 12 and rolling bodies 21 and 22 provided rotatably on the surfaces of the carrying belts 11 and 12. A plurality of the rolling bodies 21 and 22 are provided along a carrying direction. The carrying device 100 is provided with holders 23 and 24 provided on the surfaces of the carrying belts 11 and 12 and rotatably holding the rolling bodies 21 and 22. The rolling bodies 21 and 22 are ball shapes.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供能够防止要携带的物体的质量降低的携带装置。解决方案：承载装置100具有带状物11和12以及可旋转地设置在承载带11和12的表面上的滚动体21和22.多个滚动体21和22沿输送方向设置。承载装置100设置有设置在承载带11和12的表面上的保持件23和24，并且可旋转地保持滚动体21和22。滚动体21和22是球形。

2. 发明专利

JP2003282542A Plasma treatment apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：JP2003282542A
公开(公告)日：2003-10-03
申请号：JP2002083681
申请日：2002-03-25
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HANAZAKI MINORU , SUGAWARA KEIICHI , TAKI MASAKAZU , TSUDA MUTSUMI , SHINTANI KENJI , NOGUCHI TOSHIHIKO , YONEMURA TOSHIO
IPC分类号： H05H1/00 , H01J37/32 , H01L21/3065 , H05H1/46
CPC分类号： H01J37/32082 , H01J37/32935
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus which detects its apparatus- specific high-frequency characteristics for evaluating its process capability based on the detected high-frequency characteristics.
SOLUTION: A high-frequency current detector 11 of the plasma treatment apparatus 100 detects a high-frequency current generated when high-frequency power that does not generate plasma in a chamber 1 is fed to the chamber 1 by a high-frequency power source 10, and outputs the detected high-frequency current to a computer 12. The computer 12 compares the high-frequency current received from the high-frequency current detector 11 with a reference high-frequency current. If both the high-frequency currents agree with each other, the process performance of the plasma treatment apparatus 100 is evaluated as being normal, but if the both do not agree, the process performance is evaluated to be abnormal.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种等离子体处理装置，其基于检测到的高频特性来检测其设备特定的高频特性以评估其处理能力。解决方案：等离子体处理装置100的高频电流检测器11检测在室1中不产生等离子体的高频电力通过高频率被供给到室1时产生的高频电流电源10，并将检测到的高频电流输出到计算机12.计算机12将从高频电流检测器11接收的高频电流与参考高频电流进行比较。如果两个高频电流彼此一致，则等离子体处理装置100的处理性能被评价为正常，但是如果两者不一致，则评估处理性能是异常的。版权所有（C）2004，JPO

3. 发明专利

JP2001077071A GAS SCREENING METHOD OF SEMICONDUCTOR MANUFACTURING DEVICE 失效
公开(公告)号：JP2001077071A
公开(公告)日：2001-03-23
申请号：JP2000250268
申请日：2000-08-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： KINOSHITA YOSHIMI , KANDA TOMOYUKI , KITANO KATSUHISA , YOSHIDA KAZUO , ONISHI HIROSHI , YAMANISHI KENICHIRO , SASAKI SHIGEO , KOMORI HIDEKI , EJIMA TAIZO , TSUTAHARA KOICHIRO , NOGUCHI TOSHIHIKO , TAKAHAMA SUSUMU , KUSAKABE YOSHIHIKO , IWAMOTO TAKESHI , KOSAKA NORIYUKI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To protect the surface of a wafer holding mechanism which comes into contact with a wafer against cleaning gas by inert gas, by a method wherein the wafer contacting surface of the wafer holding mechanism where no excess deposit is attached is covered, and cleaning gas is fed to flow. SOLUTION: A semiconductor wafer 1 is heated with a heater 402 through the intermediary of a susceptor (wafer holding mechanism) 51, and the susceptor 51 is supported with an annular heat insulating material 404 as being thermally insulated. Furthermore, cleaning gas is made to flow as inert gas is fed to flow from a gas nozzle 6 or the one side of the holding mechanism 51. When cleaning gas is made to flow, the wafer contacting surface of the susceptor 51 where no excess deposit is attached is covered with a semiconductor wafer 1, by which cleaning gas is restrained from coming into contact with the contacting surface, the wafer contacting surface of the susceptor 51 where an excess deposit is attached can be restrained from being etched when a cleaning operation is carried out.

4. 发明专利

JPH08107072A THIN FILM FORMING APPARATUS AND THIN FILM FORMING METHOD 失效
公开(公告)号：JPH08107072A
公开(公告)日：1996-04-23
申请号：JP24025994
申请日：1994-10-04
申请人： MITSUBISHI ELECTRIC CORP
发明人： NOGUCHI TOSHIHIKO , SAKAMOTO KENICHIRO , BANJO TOSHINOBU
IPC分类号： H01L21/205 , H01L21/31
摘要： PURPOSE: To make the thickness of a film uniform by a method wherein an exhaust passage which has a ring-shape along the outer circumference of a wafer stage and through which remnant gas after reaction is discharged is provided. CONSTITUTION: After a wafer stage 31 is loaded with a wafer 28, He gas is introduced through a first gas introduction pipe 40 and an inert gas introducing hole 31b. Dichlorsilane and ammonia are introduced into a reaction chamber 25 through 8 first reactive gas introducing pipe 46a and a second reactive gas introducing pipe 46b respectively. A required thin film is formed on the surface of a wafer 28 by a thermochemical reaction. While the film is formed, a wafer entrance part 27 is closed by a cover 45. During that time, remnant gas such as unreacted gas is discharged out of a case 22 from an exhaust outlet 26 through an exhaust passage 24 and an exhaust chamber 23. It is to be noted that the exhaust passage 24 has an identical opening area aver the whole outer circumference of the wafer stage 31 and, further, the cross-sectional area of the exhaust outlet 26 is larger than the opening area of the exhaust passage 24.

5. 发明专利

JPH06163497A METHOD AND APPARATUS FOR CLEANING 失效
公开(公告)号：JPH06163497A
公开(公告)日：1994-06-10
申请号：JP31730892
申请日：1992-11-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： NOGUCHI TOSHIHIKO , BANJO TOSHINOBU
IPC分类号： B08B7/04 , H01L21/304
摘要： PURPOSE:To provide a reliable cleaning apparatus for removing dust completely from both sides of semiconductor wafers irrespective of their surface features. CONSTITUTION:A cleaning device comprises a pair of moving members 12A and 12B that run on rails 11, a pair of arms 13A and 13B extended from the moving members 12A and 12B, and a first pair of nozzles 14A and 14B for emitting very small, frozen particles to both sides of semiconductor wafers W held between the arms 13A and 13B. Above and close to the first nozzles, a second pair of nozzles 15A and 15B are provided for emitting very pure water vibrated by ultrasonic energy. All the nozzles are enclosed in a cleaning bath 16, so that particles from the nozzles are kept from splashing outside.

6. 发明专利

JPH0487335A CLEANING APPARATUS OF SEMICONDUCTOR WAFER 失效
公开(公告)号：JPH0487335A
公开(公告)日：1992-03-19
申请号：JP20140790
申请日：1990-07-31
申请人： MITSUBISHI ELECTRIC CORP
发明人： ONO TOSHIKI , YAMAZAKI SHIRO , NOGUCHI TOSHIHIKO
IPC分类号： H01L21/304 , H01L21/00
摘要： PURPOSE:To prevent a jet stream from being whirled when fine frozen particles are jetted and to prevent dust particles from adhering to a semiconductor wafer by providing the following: an evacuation chamber which has an expanded part having a cross- sectional area larger than that of a cleaning tank and which has been connected to the downstream of the cleaning tank; a curved guide plate which guides a jet stream from the cleaning tank to the expanded part in the evacuation chamber; and an evacuation blower which evacuates the inside of the evacuation chamber. CONSTITUTION:Fine frozen particles which have been jetted at a high pressure together with a gas from a jet nozzle 5 are passed through a flow-regulating plate 13; after that, they are guided to guide plates 12 and guided to an evacuation chamber 11 having an expanded part 11a; their flow speed is reduced. At this time, an air current inside a cleaning tank 10 is regulated to a down flow by the action of the flow- regulating plate 13. Since the speed of a jet stream is reduced quickly and its flow is regulated in this manner, it is possible to effectively prevent the jet stream from being whirled upward even when the evacuation amount of an evacuation blower 9 is not large. When the jet stream raised along the inner wall of the cleaning tank 10 is whirled, it hits a stopper 15 and is evacuated from an evacuation port 14 which has been opened at the lower part of the base of the stopper 15.

7. 发明专利

JPS6418478A ULTRASONIC POWER 失效
公开(公告)号：JPS6418478A
公开(公告)日：1989-01-23
申请号：JP17441987
申请日：1987-07-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： NOGUCHI TOSHIHIKO , YOKOYAMA NAOMI
IPC分类号： H01L21/607 , B06B1/02 , H01L21/60
摘要： PURPOSE: To speed up a response by detecting the deviation in the resonance frequency of an ultrasonic vibrator transducer by a phase difference between voltage and current, converting the deviation to a voltage value and adding the value to a command voltage, thereby executing control. CONSTITUTION: The voltage value set by a command voltage setting circuit 1 is inputted to an oscillator 3 and is oscillated at the frequency proportional to the voltage. The AC voltage is amplified by an amplifier 4 to vibrate the ultrasonic vibrator transducer 5. The voltage impressed on the vibrator 5 and the current flowing in the vibrator 5 are detected and the pulse of the length proportional to the phase difference is created. On the other hand, the pulse train output from the oscillator 7 generating a sampling clock and the pulse proportional to the phase difference are inputted to an AND gate 8 which in turn creates an output pulse train. The pulse train is counted by a binary counter 9 and is converted to parallel data proportional to the phase difference. The data is inputted to an address line. As a result, a low cost, a high speed and good stability are obtd.

8. 发明专利

JPS60216776A CONTROLLER FOR DRIVE MOTOR 失效
公开(公告)号：JPS60216776A
公开(公告)日：1985-10-30
申请号：JP7324984
申请日：1984-04-10
申请人： MITSUBISHI ELECTRIC CORP
发明人： MATSUDA KOUJI , NOGUCHI TOSHIHIKO
IPC分类号： H02P29/00 , G05D3/12 , G05D13/04 , H02P29/60
摘要： PURPOSE:To prevent driving means from damaging and a motor from burning out by limiting the variation amount of the output value of speed control means by limiting means, thereby interrupting to apply an abrupt control signal to the driving means. CONSTITUTION:Limiting means 9 do not output an output value received from speed limiting means 7 directly to drive means 8, but compares with the output value of previous time preserved in adding/subtracting means 9c. Limiting means 9b sets the upper limit value to an arbitrary value N when the difference exceeds the arbitrary value N, and outputs the sum of the contents of memory means 9a by adding/subtracting means 9d. Thus, the variation amount of the output value of speed controlling means 7 is limited by the limiting means 9. In other words, when large variation amount is generated, it is limited by the means 9, thereby preventing the driving means 8 from damaging and a motor 3 from burning out.

9. 发明专利

JPS60214017A Position detector of industrial robot 失效
标题翻译：工业机器人的位置检测器
公开(公告)号：JPS60214017A
公开(公告)日：1985-10-26
申请号：JP6943284
申请日：1984-04-06
申请人： Mitsubishi Electric Corp
发明人： NOGUCHI TOSHIHIKO , MATSUO ITARU
IPC分类号： G05D3/12 , B25J9/16 , B25J19/02 , G05B19/35
CPC分类号： G05B19/351 , G05B2219/37462 , G05B2219/45083
摘要： PURPOSE:To improve the reliability by correcting the rotational extent of other articulations by the rotation of one articulation of the industrial robot, correcting and comparing the output value of a potentiometer with a reference voltage, and detecting an overrun position. CONSTITUTION:When servomotors 12-14 which drive the 1st-the 3rd wrists of the robot rotate, potentiometers 18-20 are rotated through speed reducers 15- 17 to obtain output voltages proportional to their angles of rotation, and the voltages are outputted to comparing circuits 43-45. In this case, the angles of rotation of the 2nd-the 3rd wrists are not proportional to the output voltage of the potentiometers 18-19, so arithmetic circuits 41 and 42 are provided to correct them. The arithmetic circuit 41 adds or subtracts the obtained by dividing the deviation by a proportional constant to or from the output voltage of the potentiometer 19 by the rotation of the servomotor 12 for the 1st wrist. The arithmetic circuit 42 performs addition or subtraction similarly by the rotations of the servomotors 12 and 13. Thus, output voltages proportional to the angles of rotation of the respective wrists are obtained.
摘要翻译：目的：通过工业机器人的一个关节的旋转来校正其他关节的旋转程度，通过校正和比较电位器的输出值与参考电压，并检测超限位置来提高可靠性。构成：当驱动机器人的第1手腕旋转的伺服电动机12-14时，电位计18-20通过减速器15-17旋转以获得与其旋转角成正比的输出电压，并将电压输出到比较电路43-45。在这种情况下，第2手腕的旋转角度与电位计18-19的输出电压成正比，所以提供运算电路41和42来校正它们。算术电路41通过用于第一腕的伺服电动机12的旋转将偏差除以比例常数与电位计19的输出电压相加或相减得到的值。算术电路42类似地通过伺服电动机12和13的旋转来执行加法或减法。因此，获得与各个手腕的旋转角度成比例的输出电压。

10. 发明专利

JP2001250819A SEMICONDUCTOR MANUFACTURING DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001250819A
公开(公告)日：2001-09-14
申请号：JP2000058951
申请日：2000-03-03
申请人： MITSUBISHI ELECTRIC CORP
发明人： NOGUCHI TOSHIHIKO
IPC分类号： C23C16/448 , H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing device equipped with a carburetor which does not become defective even left as it is under a high- temperature condition. SOLUTION: This semiconductor manufacturing device performs such control under the control of a device controller that the device detects whether or not film forming treatment ends in step S2 and, when the device detects that the treatment ends, the device actuates a timer to count time from '0' in step S3. In step S5, the device checks whether or not the count time of the timer (the leaving time of the carburetor under a high-temperature condition) reaches a prescribed value and, when the count time reaches the value, the device shifts to step S6 and forces the carburetor to execute dummy vaporization.

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