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1. 发明专利

JP2001201842A PHASE SHIFT PHOTOMASK BLANK, PHASE SHIFT PHOTOMASK, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001201842A
公开(公告)日：2001-07-27
申请号：JP2000243103
申请日：2000-08-10
申请人： ULVAC SEIMAKU KK , MITSUBISHI ELECTRIC CORP
发明人： TOKU AKIHIKO , KAWADA SUSUMU , KANAI SHUICHIRO , YOSHIOKA NOBUYUKI , MAEDOKO KAZUYUKI
IPC分类号： G03F1/32 , G03F1/68 , G03F7/20 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide the phase shift photomask, capable of the satisfied examination, which can obtain sufficient transmitivity for the exposure wavelength of the sort wavelength to be used and has the suitable transmitvity also for the defective examination wavelength, and to provide phase shift photomask blanks for manufacturing the mask and the manufacturing method of the semiconductor device using this mask. SOLUTION: In a attenuated type phase shift film consisting of two layers, the refractive index of the upper film is set smaller than the refractive index of the sublayer film, the transmitivity in the exposure wavelength is set high, and in the attenuated type phase shift film consisting of three layers, the refractive index of the film of the intermediate layer is set smaller than the refractive index of the upper layer and the sublayer film, and the transmitivity in the defective examination wavelength is lowered. In the attenuated type phase shift film consisting of three-layers or more, the refractive index of the film of the uppermost layer is set smaller than the refractive index of the sublayer direct film, and the trasmitivity in the exposure wavelength is set high.

2. 发明专利

JP2001027798A PHASE SHIFTER FILM AND PRODUCTION OF SAME 失效
公开(公告)号：JP2001027798A
公开(公告)日：2001-01-30
申请号：JP19994199
申请日：1999-07-14
申请人： ULVAC SEIMAKU KK , MITSUBISHI ELECTRIC CORP
发明人： KAWADA SUSUMU , TOKU AKIHIKO , YOSHIOKA NOBUYUKI , MAEDOKO KAZUYUKI
IPC分类号： H01L21/027 , C23C14/06 , C23C14/08 , C23C14/34 , C23C14/35 , G03F1/32 , G03F1/40 , G03F1/68 , H01L21/306 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To obtain a half tone type phase shift mask applicable for ArF laser or KrF laser by the user of molybdenum silicide by forming a phase shifter film, which is to be used for the phase shift mask, by using a reactive long slow spattering device. SOLUTION: The sputtering device is provided with a low pressure vacuum tank 3. The vacuum tank 3 has a reaction gas introducing port 14a, an inert gas introducing port 14b and a mixed gas introducing port 14c, and further, has two vacuum exhaust ports 14d and 14c, and furthermore, a target electrode 5 and a substrate holder 7. A vacuum pump is connected to the vacuum exhaust port 14d and vacuum exhaust port 14c, the target electrode 5 is provided with a magnet plate 9 having dual magnets 10, which are arranged on the double coaxial circles, on the rear surface. The substrate holder 7 is provided with a heater 11 on the rear surface. The molybenum silicide is used as a target when the film is formed.

3. 发明专利

JP2000098582A PHASE SHIFT PHOTOMASK BLANK, PHASE SHIFT PHOTOMASK, THEIR FABRICATION AND EQUIPMENT FOR FABRICATION OF THE SAME PHOTOMASK BLANK 失效
公开(公告)号：JP2000098582A
公开(公告)日：2000-04-07
申请号：JP26355498
申请日：1998-09-17
申请人： ULVAC SEIMAKU KK , MITSUBISHI ELECTRIC CORP
发明人： TOKU AKIHIKO , KAWADA SUSUMU , YAMAMOTO TSUNEO , AMANO JUN , KOBAYASHI RYOICHI , YOSHIOKA NOBUYUKI
IPC分类号： C23C14/00 , C23C14/04 , C23C14/06 , C23C14/34 , C23C14/50 , G03F1/00 , G03F1/32 , G03F1/40 , G03F1/68 , G03F1/80 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a phase shift photomask blank having excellent chemical resistance and optical properties, a phase shift photomask fabricated by using the photomask blank, fabrication processes of the photomask blank and photomask and equipment for fabrication of the photomask blank. SOLUTION: The fabrication process of this phase shift photomask blank is for forming thin films on a substrate by a reactive sputtering method, wherein the substrate is passed on a sputtering target at least four times to form homogeneous thin films 81, 82, 83 and 84, gaseous NO is used as a reactive gas, a mixed target consisting of molybdenum and silicon is used as a sputtering target, also a transparent substrate is used as a substrate on which the thin films 81, 82, 83 and 84 should be formed and as a result, an optical-transmissive film capable of transmitting intense light is formed on the transparent substrate. Further, in the fabrication, each of the thin films 81, 82, 83 and 84 is formed through an aperture having sufficiently greater length along the transfer direction of the substrate while allowing even regions where the maximum value of the deposition rate of a target component is

4. 发明专利

JPH07168343A PHASE-SHIFT MASK AND ITS PRODUCTION 失效
公开(公告)号：JPH07168343A
公开(公告)日：1995-07-04
申请号：JP21400294
申请日：1994-09-07
申请人： DAINIPPON PRINTING CO LTD , ULVAC SEIMAKU KK , MITSUBISHI ELECTRIC CORP
发明人： TOKU AKIHIKO , KAWADA SUSUMU , YOSHIOKA NOBUYUKI
IPC分类号： G03F1/32 , G03F1/40 , G03F1/68 , H01L21/027 , G03F1/08
摘要： PURPOSE:To detect the defects of the phase-shift mask with a conventional defect inspection instrument without lowering the performance as a phase shift mask by using the phase shifter part consisting of a combination of a single- layer film and a transmission film. CONSTITUTION:In this mask, the transmission film 10 which has a prescribed transmissivity and pattern is formed on the principal surface of the quartz substrate 1 that transmits the light for exposure and consists of e.g. a molybdenum silicide film. Also, the single-layer film 4 which consists of an almost homogeneous material that shifts the phase angle of the light for exposure by 180 deg. in combination with the film 10 and has a 4 to 20% transmissivity is formed on the film 10. The single-layer film 4 consists of a molybdenum silicide oxide film or molybdenum silicide oxide nitride film, etc. The phase shifter part 20 comprises this single-layer film 4 and the transmission film 10. Thus, the dependence of the transmissivity of the phase shifter part 20 on the change in wavelength of the light to be transmitted can be reduced.

5. 发明专利

JPH10289897A DRY ETCHING DEVICE AND METHOD FOR MASK SUBSTRATE 失效
公开(公告)号：JPH10289897A
公开(公告)日：1998-10-27
申请号：JP9937097
申请日：1997-04-16
申请人： FUJITSU LTD , MITSUBISHI ELECTRIC CORP , ULVAC SEIMAKU KK
发明人： HOSHINO EIICHI , YOSHIOKA NOBUYUKI , HAYASHI ATSUSHI
IPC分类号： C23F4/00 , G03F1/54 , H01L21/302 , H01L21/3065 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To make an etching rate of an entire mask substrate almost constant in a dry etching device and method for mask substrate. SOLUTION: A dry etching device used for producing a mask substrate for fabrication of semiconductor devices comprises a first electrode 1, a second electrode 3 which faces the first electrode 1 with a given space therebetween and is mounted with a mask substrate 9 thereon, and a sample stage 5 which is disposed between the mask substrate 9 and the second electrode 3 and has a thickness determined to make the surface electric potential of the mask substrate 9 almost constant during an etching operation. In this sample stage 5, the surface electric potential is measured by changing the thickness of the sample base under the etching condition and the thickness which makes the surface electric potential of the central portion and the electric potential of the peripheral portion almost agree with each other is determined.

6. 发明专利

JPH08262688A PHASE SHIFT PHOTOMASK BLANKS, PHASE SHIFT PHOTOMASK, AND THEIR MANUFACTURE 失效
公开(公告)号：JPH08262688A
公开(公告)日：1996-10-11
申请号：JP9140195
申请日：1995-03-24
申请人： ULVAC SEIMAKU KK , MITSUBISHI ELECTRIC CORP
发明人： ISAO AKIHIKO , KAWADA SUSUMU , HAYASHI ATSUSHI , YOSHIOKA NOBUYUKI , MAEDOKO KAZUYUKI
IPC分类号： G03F1/32 , G03F1/68 , H01L21/027 , G03F1/08
摘要： PURPOSE: To provide a phase shift mask which satisfies optical characteristics and chemical resistance, has high pattern precision, and develops no pattern crack. CONSTITUTION: When phase shift films 10, 40 for shifting the phase of exposure light are formed, phase shift photomask blanks are formed with about the thickness directional center being set to a composition having a slow side etching speed S when the films are formed with a single composition, so that the difference in the side etching quantity differed in the thickness direction of the phase shift films 10, 40 is minimized, and when phase shift photomasks 35, 39 are formed by dry etching, the side surfaces of shifter parts 7, 17 are raised almost vertically from transparent bases 5, 15. The regulation of adding ratio of NO gas at sputtering suffices for the use of a molybdenum silicide oxide nitride film as the phase shift film.

7. 发明专利

JPH06347996A DRY ETCHING METHOD FOR PHOTOMASK 失效
公开(公告)号：JPH06347996A
公开(公告)日：1994-12-22
申请号：JP13219593
申请日：1993-06-02
申请人： MITSUBISHI ELECTRIC CORP , ULVAC SEIMAKU KK
发明人： YOSHIOKA NOBUYUKI , AOYAMA SATORU , WATAKABE YAICHIRO , TOKU AKIHIKO , TOKORO YASUO , HAYASHI ATSUSHI
IPC分类号： G03F1/54 , H01L21/302 , H01L21/3065 , G03F1/08
摘要： PURPOSE:To provide the etching method which makes it possible to obtain a photomask having high accuracy by using a dry etching device having rotating magnetic fields. CONSTITUTION:A photomask substrate 11 is mounted on an RF electrode 10 surface in an etching chamber 2 of the dry etching device 1 having the rotating magnetic fields by electromagnets 5 to 8 and a pattern material is etched by reactive ion etching under the conditions of 50 to 150 gauss magnetic field intensity of the electromagnets, 0.03 to 0.3Torr reactive gaseous pressure in the etching chamber and 0.20 to 0.32W/cm RF electric power density of the electrodes. The controllability of plasma is good and selection ratios are improved. The pattern material of the photomask is subjected to the etching with small CD loss, good intra-surface uniformity and high accuracy by setting magnetic field intensity, reactive gaseous pressure and RF electric power density to the values described above.

8. 发明专利

JPH06330357A DRY ETCHING DEVICE FOR PHOTOMASK 失效
公开(公告)号：JPH06330357A
公开(公告)日：1994-11-29
申请号：JP12413793
申请日：1993-05-26
申请人： MITSUBISHI ELECTRIC CORP , ULVAC SEIMAKU KK
发明人： YOSHIOKA NOBUYUKI , AOYAMA SATORU , HANAZAKI MINORU , TOKU AKIHIKO , TOKORO YASUO , OZAKI TOSHIHARU
IPC分类号： C23F4/00 , G03F1/68 , G03F1/80 , G03F1/08
摘要： PURPOSE:To enable uniform etching by avoiding influence of magnetic field on the peripheral equipments in a dry etching device for photomask and also increasing magnetic strength and elevating the symmetry of the magnetic field, and to manufacture a photomask with high accuracy. CONSTITUTION:In the dry etching device for photomask provided with two pairs of electromagnets 4, 5 generating rotating magnetic field through the etching room which is surrounded with a magnetic shielding body and provided with a transfer port of the photomask, a magnetic field correcting member 17 with high permeability is provided in the vicinity 10 of the transfer port of the substrate in the etching room 1.

9. 发明专利

JPH0874031A PRODUCTION OF PHASE-SHIFT PHOTOMASK BLANK, PHASE-SHIFT PHOTOMASK BLANK AND PHASE-SHIFT PHOTOMASK 失效
公开(公告)号：JPH0874031A
公开(公告)日：1996-03-19
申请号：JP21479294
申请日：1994-09-08
申请人： ULVAC SEIMAKU KK , MITSUBISHI ELECTRIC CORP
发明人： TOKU AKIHIKO , KAWADA MAE , SAITO YOSHIHIRO , YAMAMOTO TSUNEO , HAYASHI ATSUSHI , YOSHIOKA NOBUYUKI , CHIBA AKIRA , MIYAZAKI JUNJI
IPC分类号： C23C14/06 , C23C14/34 , G03F1/32 , G03F1/68 , H01L21/027
摘要： PURPOSE: To provide a phase-shift photomask blank suitable to UV exposure and highly resistant to chemicals. CONSTITUTION: Gaseous nitrogen monoxide is added by 2.65-6vol.%, then a molybdenum silicide target is sputtered, and a molybdenum silicide oxynitride film is formed on a transparent substrate. This film is suitable to the phase-shift film in a KrF excimer laser wavelength and highly resistant to chemicals. Since the chemical resistance is especially improved when the proportion of the gaseoous nitrogen monoxide is low, the film is used as the protective film of the phase-shift film by adding 0.5-6vol.%. The process variation of the transmittance is reduced when the film is heat-treated at >=200 deg.C, and the transmittance is increased in the exposure wavelength.

10. 发明专利

JP2011095787A Phase shift photo mask blanks, phase shift photo mask, and method for fabricating semiconductor device 有权
标题翻译：相移片照片掩模，相移片照片掩模，以及制造半导体器件的方法
公开(公告)号：JP2011095787A
公开(公告)日：2011-05-12
申请号：JP2011033684
申请日：2011-02-18
申请人： Renesas Electronics Corp , Ulvac Seimaku Kk , アルバック成膜株式会社 , ルネサスエレクトロニクス株式会社
发明人： TOKU AKIHIKO , KAWADA SUSUMU , KANAI SHUICHIRO , YOSHIOKA NOBUYUKI , MAEDOKO KAZUYUKI
IPC分类号： G03F1/32 , G03F1/50 , G03F1/54
摘要： PROBLEM TO BE SOLVED: To provide a phase shift photo mask which has sufficient transmittance of wavelength to be used even for a short exposure light wavelength, has proper transmittance of wavelength for defect inspections to successfully achieve the inspections, to provide a phase shift photo mask blanks for fabricating the mask, and to provide a method for fabricating a semiconductor device using the mask. SOLUTION: In an attenuated type phase shift film consisting of two layers, a film refractive index and an extinction coefficient of an upper layer are made lower than those of a lower layer to increase transmittance at an exposure light wavelength. In an attenuated type phase shift film consisting of three layers, a film refractive index and an extinction coefficient of an intermediate layer are made lower than those of an upper layer and a lower layer to reduce transmittance at the defect examination wavelength. In an attenuated type phase shift film consisting of three or more layers, a film refractive index and an extinction coefficient of the uppermost layer are made lower than a film refractive index of a layer just under the uppermost layer to increase transmittance at the exposure light wavelength. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供即使对于短曝光光波长也具有足够的波长透射率的相移光掩模，对于缺陷检查具有适当的波长透射率以成功地实现检查，以提供相位用于制造掩模的移位光掩模坯料，并提供使用该掩模制造半导体器件的方法。解决方案：在由两层构成的衰减型相移膜中，使上层的膜折射率和消光系数低于下层的折射率和消光系数，以增加曝光光波长的透射率。在由三层组成的衰减型相移膜中，使中间层的膜折射率和消光系数低于上层和下层的折射率和消光系数，以降低缺陷检查波长处的透射率。在由三层或更多层组成的衰减型相移膜中，使最上层的膜折射率和消光系数低于刚好在最上层的层的膜折射率，以增加曝光光波长的透射率。版权所有（C）2011，JPO＆INPIT

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