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1. 发明专利

JP2008198629A Surface treatment method and solar cell 审中-公开
标题翻译：表面处理方法和太阳能电池
公开(公告)号：JP2008198629A
公开(公告)日：2008-08-28
申请号：JP2007028995
申请日：2007-02-08
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TSUDA MUTSUMI , TAKI MASAKAZU , SUMIYA HIROAKI
IPC分类号： H01L31/04 , H01L21/3065
CPC分类号： Y02E10/546
摘要： PROBLEM TO BE SOLVED: To form an irregular shape satisfactory for a solar cell on the surface of a polycrystalline silicon substrate. SOLUTION: In a surface treatment method, the surface of the polycrystalline silicon substrate 2 is treated. In the surface treatment method, the polycrystalline silicon substrate 2 is arranged between a stage electrode 3 provided in a reaction vessel 1, and an earthed electrode 4. Then, the surface treatment method has a process for introducing etching gas containing ClF 3 into the reaction vessel 1, and applying high-frequency power between the stage electrode 3 and the earthed electrode intermittently. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了形成在多晶硅衬底的表面上满足太阳能电池的不规则形状。解决方案：在表面处理方法中，处理多晶硅衬底2的表面。在表面处理方法中，将多晶硅基板2配置在设置在反应容器1中的载置电极3和接地电极4之间。然后，表面处理方法具有引入含有ClF < 进入反应容器1，并且在台阶电极3和接地电极间歇地施加高频电力。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2008170368A Magnetic field detection device, and manufacturing method thereof 有权
标题翻译：磁场检测装置及其制造方法
公开(公告)号：JP2008170368A
公开(公告)日：2008-07-24
申请号：JP2007005776
申请日：2007-01-15
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： FURUKAWA TAISUKE , KUROIWA TAKEHARU , TOMOHISA SHINGO , OSANAGA TAKASHI , TAKI MASAKAZU , TAKADA YUTAKA
IPC分类号： G01R33/09
摘要： PROBLEM TO BE SOLVED: To solve the problem wherein adjustment of a resistance value of a resistance part constituting a Wheatstone bridge circuit is difficult without damaging linearity or a temperature characteristic of an output to a detected magnetic field, in a magnetic field detection device equipped with the Wheatstone bridge circuit having a plurality of resistance parts using respectively a magnetic resistance effect element as a component.
SOLUTION: This magnetic field detection device is equipped with the Wheatstone bridge circuit having the plurality of resistance parts, and at least one resistance part of the resistance parts is constituted of an element group formed by connecting a plurality of magnetic resistance effect elements in parallel.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题为了解决在构成惠斯通电桥电路的电阻部分的电阻值的调整困难而不损害对检测的磁场的输出的线性或温度特性的问题，则在磁场检测中装备有惠斯通电桥电路的装置，其具有分别使用磁阻效应元件作为部件的多个电阻部件。解决方案：该磁场检测装置配备有具有多个电阻部分的惠斯通电桥电路，电阻部分的至少一个电阻部分由通过连接多个磁阻效应元件形成的元件组构成在平行下。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2005260028A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2005260028A
公开(公告)日：2005-09-22
申请号：JP2004070367
申请日：2004-03-12
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TSUDA MUTSUMI , TAKI MASAKAZU , MIKAMI NOBORU
IPC分类号： H01L29/872 , H01L29/47
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that can solve such problems that conventional semiconductor devices using TaSi
x as nonproliferation films cannot prevent electrode oxidation because of the inadequate cutoff of intruding oxygen and cannot ensure operations over several tens of thousands of hours without difficulty, even though semiconductor devices having electrode contacts with remarkable heat resistance and oxidation resistance are essential in sensors with SiC films that are used in an environment with a high temperature and an oxidizing atmosphere.
SOLUTION: A tunnel insulating film 8 made of AlN films is formed between a nonproliferation film 7 and a metal electrode to prevent oxygen from intruding in an environment with a high temperature, so that the nonproliferation film and a lower electrode film can be protected against oxidation.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供可以解决这样的问题的半导体器件，因为使用TaSi x 的常规半导体器件作为防扩散膜不能防止电极氧化，因为侵入氧的截留不充分，并且不能确保即使在具有高温和氧化气氛的环境中使用的SiC膜的传感器中，即使具有显着的耐热性和耐氧化性的电极接触的半导体器件也是必不可少的，操作数千小时。解决方案：在防扩散膜7和金属电极之间形成由AlN膜制成的隧道绝缘膜8，以防止氧气在高温环境下侵入，使得不扩散膜和下电极膜可以防止氧化。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2003347401A Semiconductor device having multilayer wiring structure and its manufacturing method 审中-公开
标题翻译：具有多层布线结构的半导体器件及其制造方法
公开(公告)号：JP2003347401A
公开(公告)日：2003-12-05
申请号：JP2002156935
申请日：2002-05-30
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TOMOHISA SHINGO , TSUDA MUTSUMI , FUKADA TETSUO , TAKI MASAKAZU , SHINTANI KENJI
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532
CPC分类号： H01L23/53295 , H01L23/5222 , H01L23/5226 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having a multilayer wiring struc ture allowing an improvement in the strength of a wiring layer to be compatible with an improvement in the transfer speed of signals and its manufacturing method. SOLUTION: A plurality of wiring layers 2 that are arranged at locations at the same height are laterally connected by a diffusion preventing insulation layer 4. The wiring layers 2 that are arranged at the locations at different heights are electrically connected in a longitudinal direction through plug parts 2a. A second interlayer film 5 is arranged only in a region right below the wiring layer 2, and connects the wiring layer 2 with the diffusion preventing insulation layer 4 in a longitudinal direction. On the side of each of the plurality of wiring layers 2, a hollow space 20 or an interlayer film 7 with a low dielectric constant of 2.5 or below are located. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种具有多层布线结构的半导体器件，其允许提高布线层的强度以与信号的传送速度的提高兼容，并且其制造方法。解决方案：布置在相同高度的位置的多个布线层2通过防扩散绝缘层4横向连接。布置在不同高度处的布线层2以纵向方式电连接方向穿过插头部分2a。第二层间膜5仅布置在布线层2的正下方的区域中，并且在纵向方向上将布线层2与扩散防止绝缘层4连接。在多个布线层2的一侧，设有中空空间20或介电常数为2.5以下的中间膜7。版权所有（C）2004，JPO

5. 发明专利

JP2003282542A Plasma treatment apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：JP2003282542A
公开(公告)日：2003-10-03
申请号：JP2002083681
申请日：2002-03-25
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HANAZAKI MINORU , SUGAWARA KEIICHI , TAKI MASAKAZU , TSUDA MUTSUMI , SHINTANI KENJI , NOGUCHI TOSHIHIKO , YONEMURA TOSHIO
IPC分类号： H05H1/00 , H01J37/32 , H01L21/3065 , H05H1/46
CPC分类号： H01J37/32082 , H01J37/32935
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus which detects its apparatus- specific high-frequency characteristics for evaluating its process capability based on the detected high-frequency characteristics.
SOLUTION: A high-frequency current detector 11 of the plasma treatment apparatus 100 detects a high-frequency current generated when high-frequency power that does not generate plasma in a chamber 1 is fed to the chamber 1 by a high-frequency power source 10, and outputs the detected high-frequency current to a computer 12. The computer 12 compares the high-frequency current received from the high-frequency current detector 11 with a reference high-frequency current. If both the high-frequency currents agree with each other, the process performance of the plasma treatment apparatus 100 is evaluated as being normal, but if the both do not agree, the process performance is evaluated to be abnormal.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种等离子体处理装置，其基于检测到的高频特性来检测其设备特定的高频特性以评估其处理能力。解决方案：等离子体处理装置100的高频电流检测器11检测在室1中不产生等离子体的高频电力通过高频率被供给到室1时产生的高频电流电源10，并将检测到的高频电流输出到计算机12.计算机12将从高频电流检测器11接收的高频电流与参考高频电流进行比较。如果两个高频电流彼此一致，则等离子体处理装置100的处理性能被评价为正常，但是如果两者不一致，则评估处理性能是异常的。版权所有（C）2004，JPO

6. 发明专利

JP2012028682A Plasma device and method of producing semiconductor thin film by using it 有权
标题翻译：等离子体装置和使用它制造半导体薄膜的方法
公开(公告)号：JP2012028682A
公开(公告)日：2012-02-09
申请号：JP2010168200
申请日：2010-07-27
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： IKEDA TOMOHIRO , TSUDA MUTSUMI , TAKI MASAKAZU
IPC分类号： H01L21/31 , C23C16/509 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To obtain a plasma device in which a large substrate can be processed stably even in a frequency region of a VHF band by minimizing ground impedance.SOLUTION: A plasma device comprises a stage moving mechanism which adjusts the interval of a stage and a shower plate, and a conductive current-carrying member which short-circuits the periphery of the stage and the inner wall surface of a vacuum chamber adjacent thereto out of a ground path from the stage to ground means. The current-carrying member has an electric contact which slides along the movement of the stage, and the electric contact is shielded from the plasma of gas generated between the shower plate and a substrate by high frequency power.
摘要翻译：要解决的问题：为了获得即使在VHF频带的频率区域中也可以稳定地处理大的衬底以使接地阻抗最小化的等离子体器件。解决方案：等离子体装置包括调节台阶和喷淋板的间隔的台移动机构和使台的周边和真空室的内壁面短路的导电载流构件相邻于从舞台到地面装置的接地路径。载流构件具有沿着载物台的移动而滑动的电接触，并且通过高频功率将电触点与喷淋板和基板之间产生的气体的等离子体屏蔽。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2012014991A High-frequency plasma generator and thin film manufacturing method using the same 审中-公开
标题翻译：高频等离子体发生器和薄膜制造方法
公开(公告)号：JP2012014991A
公开(公告)日：2012-01-19
申请号：JP2010151381
申请日：2010-07-01
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TAWARA YUKIHIRO , FUKAZAWA TORU , TSUDA MUTSUMI , TAKI MASAKAZU , YONEDA NAOFUMI
IPC分类号： H05H1/46 , C23C16/509 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To obtain a high-frequency plasma generator which can generate a uniform distribution of electric field between electrodes using a simple structure.SOLUTION: The high-frequency plasma generator comprises: a reaction container (10); a grounded electrode (12) provided in the reaction container; a non-grounded electrode (21) provided in an opening of the reaction container via an insulator and forming a pair of parallel plate electrodes together with the grounded electrode; and power supply means (40) supplying high-frequency power to the non-grounded electrode via a plurality of power feeding points provided on the non-grounded electrode. The non-grounded electrode has a rectangular form, and the plurality of power feeding points are provided at ends of the non-grounded electrode along two opposing sides on its surface not opposite to the grounded electrode. The insulator includes a first dielectric (1b) provided in an area where a side face of the non-grounded electrode along its long side and the reaction container face each other and a second dielectric (1c) provided in an area where a side face of the non-grounded electrode along its short side and the reaction container face each other, the dielectric constant of the first dielectric and that of the second dielectric differing from each other.
摘要翻译：要解决的问题：获得能够使用简单结构在电极之间产生均匀的电场分布的高频等离子体发生器。解决方案：高频等离子体发生器包括：反应容器（10）; 设置在反应容器中的接地电极（12）通过绝缘体设置在反应容器的开口中并与接地电极一起形成一对平行板电极的非接地电极（21）; 以及经由设置在非接地电极上的多个供电点向非接地电极提供高频电力的电源装置（40）。非接地电极具有矩形形式，并且多个馈电点设置在非接地电极的两端，在与接地电极不相对的表面上的两个相对侧。绝缘体包括：第一电介质（1b），其设置在非接地电极的沿其长边的侧面和反应容器彼此面对的区域中;以及第二电介质（1c），其设置在沿着其短边的非接地电极和反应容器彼此面对，第一电介质的介电常数和第二电介质的介电常数彼此不同。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2011086822A Plasma treatment apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：JP2011086822A
公开(公告)日：2011-04-28
申请号：JP2009239524
申请日：2009-10-16
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： FUKADA TETSUO , TSUDA MUTSUMI , TAKI MASAKAZU
IPC分类号： H01L21/205 , C23C16/455 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To obtain a plasma treatment apparatus which prevents the thermal deformation of a shower plate by an influence of plasma heat even in the case of treating a large-sized substrate and maintains a distance between the shower plate and the substrate uniformly on the entire surface of an electrode. SOLUTION: A plasma treatment apparatus is provided with an electrode structure for generating the plasma of a reaction gas by forming an electric field in a space with a substrate 6 while dispersedly supplying the reaction gas to the substrate 6. The electrode structure is a three-layer structure having a shower plate 1 that is installed at the substrate 6 side to dispersedly supply the reaction gas to the substrate 6 through a plurality of holes, an electrode holder 2 for holding the shower plate 1, and a high-strength member 3 that is interposed between the shower plate 1 and the electrode holder 2 and formed of a material with a smaller thermal expansion coefficient, higher heat resistance, and higher tensile strength than those of the shower plate 1. A plurality of holes penetrate the electrode structure in a laminating direction, and a plurality of gas passages 7 of the reaction gas are formed. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了获得等离子体处理装置，即使在处理大尺寸基板的情况下也能够防止等离子体热影响喷淋板的热变形，并且保持喷淋板和喷淋板之间的距离衬底均匀地涂覆在电极的整个表面上。解决方案：等离子体处理装置设置有用于通过在将基板6分散供应反应气体的同时在基板6的空间内形成电场而产生反应气体的等离子体的电极结构。电极结构具有喷淋板1的三层结构，其安装在基板6侧，以通过多个孔将反应气体分散供应到基板6，用于保持喷淋板1的电极保持器2和高强度构件3，其插入在淋浴板1和电极保持器2之间，并且由具有比淋浴板1的热膨胀系数小的热膨胀系数，更高的耐热性和更高的拉伸强度的材料形成。多个孔穿透电极形成层叠方向的结构，形成反应气体的多个气体通路7。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2010073970A Apparatus and method for forming thin film 有权
标题翻译：用于形成薄膜的装置和方法
公开(公告)号：JP2010073970A
公开(公告)日：2010-04-02
申请号：JP2008241027
申请日：2008-09-19
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TAKI MASAKAZU , TSUDA MUTSUMI
IPC分类号： H01L21/205 , C23C16/24 , C23C16/455 , C23C16/509 , C23C16/513 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and method for forming a thin film, capable of accelerating a deposition rate while maintaining appropriate crystallinity equivalent to a microcrystal silicon thin film manufactured by the high-pressure depletion method in the prior art. SOLUTION: In the apparatus of forming a thin film, a substrate stage 11 and a plasma electrode 12 are arranged opposite to each other in a film forming chamber 10, and a silane gas and a hydrogen gas are supplied to the plasma electrode 12. High-frequency voltage is applied to produce plasma and to form a microcrystal silicon film on a substrate 100 held on the substrate stage 11. The apparatus of forming a thin film includes: a silane gas accumulation/supply chamber 120 for blowing onto the substrate 100 a silane gas supplied from the outside of the film forming chamber 10 to the plasma electrode 12; and a hydrogen gas supply section 130 for changing a hydrogen gas supplied from the outside of the film forming chamber 10 to the plasma electrode 12 into hydrogen plasma, blowing it onto the substrate 100 and changing the silane gas blown out from the silane gas accumulation/supply chamber 120 into plasma. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于形成薄膜的装置和方法，其能够在保持与通过现有技术中的高压耗尽方法制造的微晶硅薄膜相当的适当结晶度的同时加速沉积速率。解决方案：在形成薄膜的装置中，在成膜室10中彼此相对地布置基板台11和等离子体电极12，并且将硅烷气体和氢气供应到等离子体电极施加高频电压以产生等离子体，并在保持在基板台11上的基板100上形成微晶硅膜。薄膜形成装置包括：用于吹送到硅基气体堆积/供应室120 基板100从成膜室10的外部供给到等离子体电极12的硅烷气体; 以及用于将从成膜室10的外部供给到等离子体电极12的氢气变更为氢等离子体的氢气供给部130，将其吹入到基板100上，并且使从硅烷气体积聚/ 供应室120进入等离子体。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2005294747A Method and device for manufacturing semiconductor device 有权
标题翻译：用于制造半导体器件的方法和装置
公开(公告)号：JP2005294747A
公开(公告)日：2005-10-20
申请号：JP2004111220
申请日：2004-04-05
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TAKI MASAKAZU , TSUDA MUTSUMI , NAKAMURA KEISUKE , SHINTANI KENJI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To prevent deposition substance from affecting a characteristic of etching, to generate plasma of a low dissociation degree which is suitable for deposition, and to secure anisotropy in an etching cycle even if cycles of etching and deposition are made into high speed in a manufacturing method of a semiconductor device to which etching and deposition are alternately applied.
SOLUTION: The manufacturing method of the semiconductor device to which etching and deposition are alternately applied includes a step for generating plasma and etching a substrate by a first excitation source which is connected to a processing room and which is for generating plasma, and a second excitation source which is connected to an electrode of a stage where the substrate is placed; and a step for generating plasma and depositing the substrate by the second excitation source.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了防止沉积物质影响蚀刻特性，产生适于沉积的低解离度的等离子体，并且即使进行蚀刻和沉积循环也能在蚀刻循环中确保各向异性在交替施加蚀刻和沉积的半导体器件的制造方法中，高速化。解决方案：交替施加蚀刻和沉积的半导体器件的制造方法包括通过连接到处理室并用于产生等离子体的第一激发源产生等离子体和蚀刻衬底的步骤，以及第二激发源，其连接到放置基板的载物台的电极; 以及用于产生等离子体并通过第二激发源沉积衬底的步骤。版权所有（C）2006，JPO＆NCIPI

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