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1. 发明专利

JP2003086574A METHOD AND APPARATUS FOR ANALYZING GAS OF SEMICONDUCTOR TREATMENT UNIT 审中-公开
公开(公告)号：JP2003086574A
公开(公告)日：2003-03-20
申请号：JP2001271440
申请日：2001-09-07
申请人： MITSUBISHI ELECTRIC CORP , MITSUBISHI ELECTRIC ENG
发明人： HANAZAKI MINORU , ONO TOSHIKI
IPC分类号： G01N21/73 , G01N21/68 , G01N33/00 , H01J37/32 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for analyzing the gas of a semiconductor treatment unit which is improved for monitoring leakage or a change of a gas composition in-situ which exerts influence on treatment characteristics of the semiconductor treatment unit. SOLUTION: The apparatus for analyzing the gas of the semiconductor treatment unit comprises a duct 7 for removing gas in a chamber on the outer wall of the chamber of the semiconductor treatment unit 100. The analyzing gas removed from the duct 7 is contained in a gas analysis chamber 5. The apparatus further comprises a discharge generator 1 mounted near the chamber 5. The generator 1 has a high-frequency wave generating coil 3 for generating a high-frequency wave to form plasma of the analyzing gas in the chamber 5. The apparatus also comprises an analyzer for analyzing the emission beam wavelength of the plasma of the gas.

2. 发明专利

JP2000306884A APPARATUS AND METHOD FOR PLASMA TREATMENT 失效
公开(公告)号：JP2000306884A
公开(公告)日：2000-11-02
申请号：JP11488599
申请日：1999-04-22
申请人： MITSUBISHI ELECTRIC CORP , MITSUBISHI ELECTRIC ENG
发明人： HANAZAKI MINORU , IKUSHIMA TAKAYUKI , SHIRAKAWA KENJI , YAMAGUCHI SHINJI , TAKI MASAKAZU
IPC分类号： H01L21/302 , H01J37/32 , H01L21/00 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus for plasma treatment, capable of treating a large-diameter wafer uniformly and reducing RIE lag for a fine etching pattern. SOLUTION: A treatment chamber 10, which is a vacuum chamber, a magnetic field generating coil 80 which is disposed around the treatment chamber 10 and generates a rotational magnetic field and gas supplying means 101 for supplying various gases to the treatment chamber 10 are provided as main constituents. The treatment chamber 10 is divided by a partitioning plate into a reaction chamber 44, in which plasma is generated and a buffer chamber 45 from which a gas supplied from outside is discharged with a pressure difference. The reaction chamber 44 is provided with a high-frequency electrode 20 counterposed to the buffer chamber 45. The gas supplying means 101 is provided with pulse gas valves 63a, 63b and supplies gases to the treatment chamber 10 in pulses.

3. 发明专利

JP2000260855A WAFER-TREATING DEVICE 失效
公开(公告)号：JP2000260855A
公开(公告)日：2000-09-22
申请号：JP6263899
申请日：1999-03-10
申请人： MITSUBISHI ELECTRIC CORP , MITSUBISHI ELECTRIC ENG
发明人： DOBASHI YUUSUKE , HANAZAKI MINORU , OURA HIDEKI
IPC分类号： C23C16/458 , C23C16/46 , H01L21/00 , H01L21/683 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To efficiently perform treatment, until a wafer is fixed to an electrostatic chuck in a wafer-treating device for fixing the wafer to the electrostatic chuck for performing desired treatment. SOLUTION: A heater 36 for heating a wafer 34 in a treatment container 22 is provided. A dielectric plate 24 for placing the wafer 34 is provided. First and second electrodes 26 and 28 are arranged in the dielectric plate 24. First and second variable DC power supplies 30 and 32 for applying each voltage to the first and second electrodes 26 and 28 are provided. When the wafer 34 is placed at an electrostatic chuck 40, the wafer 34 is preheated before generation of attracting force. After the preheating is ended, voltage is applied from the first and second variable DC power supplies 30 and 32 to the first and second electrodes 26 and 28, to attract and retain the wafer 34 at the dielectric plate 24.

4. 发明专利

JP2000031128A ETCHING PROCESSING DEVICE AND METHOD AND SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000031128A
公开(公告)日：2000-01-28
申请号：JP7097099
申请日：1999-03-16
申请人： MITSUBISHI ELECTRIC CORP , MITSUBISHI ELECTRIC ENG
发明人： ISE HIROTOSHI , IKUSHIMA TAKAYUKI , HANAZAKI MINORU , NISHIZAKI NOBUHIRO
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To realize etching without the effects of the abnormal material by the deposition of reaction product and without the etching-speed difference between roughness and finesses patterns in the film to be etched, which can perform high-selective-ratio etching for photoresist. SOLUTION: In this etching method, a pair of electrodes 7 are arranged in a processing container 1 so as to face each other, and Cl2 and BCl3 introduced as the main processing gas into the processing container 1. In this gas, the deposit-based gas, including C, H, and F bases such as CHF3 gas or CF 4 gas, is added. The pulse-wave modulated high frequency voltage is applied on a pair of electrodes, which support an etching sample 6 to be etched, and plasma is generated, so that the sample to be etched is etched.

5. 发明专利

JP2000349141A PLASMA TREATER 失效
公开(公告)号：JP2000349141A
公开(公告)日：2000-12-15
申请号：JP16186599
申请日：1999-06-09
申请人： MITSUBISHI ELECTRIC CORP , MITSUBISHI ELECTRIC ENG
发明人： KOBA NORIYUKI , HANAZAKI MINORU , OKU KOJI
IPC分类号： H01L21/302 , C23C14/50 , H01L21/205 , H01L21/3065 , H01L21/68 , H01L21/683 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma treater provided with a low-cost and high- reliability electrostatic chuck which can fix a wafer even in a state that a plasma is not produced. SOLUTION: This plasma treater incorporates an electrostatic chuck 5 for mounting a wafer 2 in a vacuum container 1. The chuck 5 is provided with a discal insulating board 27 provided on the bottom of the container 1, a ring- shaped electrode 5A provided on the edge part of the end of the board 27 and a discal electrode 5B, which is provided in an aperture provided in the electrode 5A and concentric with the electrode 5A. The electrodes 5A and 5B are constituted of aluminium and their surfaces other than the surfaces, which come into contact with the board 27, are respectively covered with dielectric films 4A and 4B containing a ceramics as their main component.

6. 发明专利

JP2000243596A DRY ETCHING DEVICE 失效
公开(公告)号：JP2000243596A
公开(公告)日：2000-09-08
申请号：JP4143599
申请日：1999-02-19
申请人： MITSUBISHI ELECTRIC CORP , MITSUBISHI ELECTRIC ENG
发明人： IKUSHIMA TAKAYUKI , SHIRAKAWA KENJI , YAMAGUCHI SHINJI , HANAZAKI MINORU
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a dry etching device in which generated foreign matter hardly adhere onto the surface of a semiconductor wafer, exhaust conductance is good, various etching conditions are accommodated, and structure is made simple. SOLUTION: A semiconductor wafer 7 is held in an upper electrode 18 so that a treating surface faces down, a gas supply electrode plate 16 for supplying etching gas so as to face the semiconductor wafer is installed in a lower electrode part 15, a main exhaust path 8 equally exhausting from the peripheries of both electrodes is installed, an auxiliary exhausting path 12 tapered downward is installed in the lower electrode 15, a mesh-state metal shield material 19 is arranged in the outlet of the auxiliary exhausting path 12, exhaust of the main exhaust path 8 and the auxiliary exhaust path 12 is conducted with a turbo-molecular pump 13 installed directly under the lower electrode part 15.

7. 发明专利

JPH11214196A PLASMA GENERATOR 失效
公开(公告)号：JPH11214196A
公开(公告)日：1999-08-06
申请号：JP1722698
申请日：1998-01-29
申请人： MITSUBISHI ELECTRIC CORP , MITSUBISHI ELECTRIC ENG
发明人： DOBASHI YUUSUKE , HANAZAKI MINORU , YONEMURA TOSHIO , TSUDA MUTSUMI , ONO KOICHI , OKU KOJI , NAKAKUMA SHINJI
IPC分类号： H05H1/46 , C23C16/50 , C23C16/511 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a plasma generator which improves uniformity of plasma treatment and can correspond to a large diameter of a substrate. SOLUTION: Micro waves which are distributed into four rod antennae 9a, 9b, 9c, 9d through branched parts 20a, 20b, 20c of a T branch from a waveguide 5 and are radiated are introduced into a vacuum vessel 1 through four dielectric tubes 10a, 10b, 10c, 10d. In the vacuum vessel 1, a multicusp magnetic field 13 and an electron cyclotron resonance region 12 are provided by a permanent magnet 11 arranged in the surroundings to generate plasma 8 having high uniformity in a region in which plasma treatment is applied to a substrate due to mutual action of vibration electric field of micro waves and magnetic field.

8. 发明专利

JP2004228460A Plasma processing apparatus and measuring method for high-frequency characteristics thereof 有权
标题翻译：等离子体加工设备及其高频特性的测量方法
公开(公告)号：JP2004228460A
公开(公告)日：2004-08-12
申请号：JP2003017002
申请日：2003-01-27
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TAKI MASAKAZU , TSUDA MUTSUMI , SHINTANI KENJI , HANAZAKI MINORU , SUGAWARA KEIICHI
IPC分类号： H05H1/00 , B01J19/08 , C23C16/505 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To obtain a plasma processing apparatus which accurately measures high-frequency characteristics, especially of accurately measuring high-frequency characteristics during the generation of plasma. SOLUTION: The plasma processing apparatus includes: a high-frequency power source, supplying high frequency electric power to electrodes arranged in a treatment chamber; a directional coupler inserted between transmission lines connecting the electrodes and the high-frequency power source so as to transmit the high-frequency electric power; a variable frequency generator that is connected to terminals combining terminals, which are connected to the electrodes of the directional coupler, and applies a high-frequency signal having a desired frequency to the electrodes; and a high-frequency characteristic detector that is connected to terminals combining terminals, which are connected to the electrodes of the directional coupler and measures the reflected waves, having high-frequency signals from the electrodes applied by the variable frequency generator. COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：为了获得准确测量高频特性的等离子体处理装置，特别是在等离子体产生期间精确地测量高频特性。解决方案：等离子体处理设备包括：高频电源，为布置在处理室中的电极提供高频电力; 插入在连接电极和高频电源的传输线之间以便传输高频电力的定向耦合器; 连接到与定向耦合器的电极连接的端子组合端子的可变频率发生器，并向电极施加具有期望频率的高频信号; 以及连接到与定向耦合器的电极连接并测量反射波的端子组合端子的高频特性检测器，其具有来自可变频率发生器施加的电极的高频信号。版权所有（C）2004，JPO＆NCIPI

9. 发明专利

JPH06330357A DRY ETCHING DEVICE FOR PHOTOMASK 失效
公开(公告)号：JPH06330357A
公开(公告)日：1994-11-29
申请号：JP12413793
申请日：1993-05-26
申请人： MITSUBISHI ELECTRIC CORP , ULVAC SEIMAKU KK
发明人： YOSHIOKA NOBUYUKI , AOYAMA SATORU , HANAZAKI MINORU , TOKU AKIHIKO , TOKORO YASUO , OZAKI TOSHIHARU
IPC分类号： C23F4/00 , G03F1/68 , G03F1/80 , G03F1/08
摘要： PURPOSE:To enable uniform etching by avoiding influence of magnetic field on the peripheral equipments in a dry etching device for photomask and also increasing magnetic strength and elevating the symmetry of the magnetic field, and to manufacture a photomask with high accuracy. CONSTITUTION:In the dry etching device for photomask provided with two pairs of electromagnets 4, 5 generating rotating magnetic field through the etching room which is surrounded with a magnetic shielding body and provided with a transfer port of the photomask, a magnetic field correcting member 17 with high permeability is provided in the vicinity 10 of the transfer port of the substrate in the etching room 1.

10. 发明专利

JPH01244619A PLASMA DRY ETCHING PROCESS 失效
公开(公告)号：JPH01244619A
公开(公告)日：1989-09-29
申请号：JP7272688
申请日：1988-03-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： ONO KOICHI , HANAZAKI MINORU , FUJITA SHIGETO , OMORI TATSUO
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To achieve high selectivity of etching without selecting a mixing ratio of etching gas, by changing a distance between a pair of parallel plate electrodes to which a high-frequency power is applied, in order to select appropri ate composition of active species in high-frequency glow discharge. CONSTITUTION:A substrate to be etched 1 is mounted on a first electrode 2 in a vessel 4. A second electrode 2 is moved vertically to regulate a distance between the first and second electrodes. Then, the vessel 4 is evacuated by an evacuating means 5. Subsequently, flow rates of carbon tetrachloride gas, oxygen gas and helium gas are regulated properly and, further, pressure of mixture of these gases within the vessel 4 is set properly. High-frequency power is applied between the first and second electrodes 2 and 3 by a high-frequency power applying means 6, whereby the gaseous mixture of carbon tetrachloride, oxygen and helium is ionized to produce plasma by high-frequency glow dis charge. A material on the substrate 1 is etched by neutral atoms or atomic ions of carbon, chlorine and oxygen, or neutral molecules or molecular ions produced by combination thereof.

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