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1. 发明专利

JP2005183833A Plasma processing equipment and processing method 有权
标题翻译：等离子体加工设备和加工方法
公开(公告)号：JP2005183833A
公开(公告)日：2005-07-07
申请号：JP2003425594
申请日：2003-12-22
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： TETSUKA TSUTOMU , IKENAGA KAZUYUKI , ONO TETSUO , KIKKAI MOTOHIKO , ITABASHI NAOSHI
IPC分类号： H01L21/3065 , C23F4/00 , H01J37/32
CPC分类号： H01J37/32477 , C23F4/00
摘要： PROBLEM TO BE SOLVED: To provide the plasma processing equipment and processing method that reduces impurities via reactor vessels, maintaining plasma stability.
SOLUTION: In the plasma processing equipment, 90% of the side wall of the inner wall 101 in the reaction chamber 1 is covered with a dielectric substance 102, and a grounded conductive material 21a with an area size smaller than or equal to 10% of the side wall of the inner wall 101 is provided in a way that direct current flows via the plasma. A DC earth made up of a conductive material 21 is grounded at a location where the floating potential of plasma (or plasma density) is higher than that (or plasma density) of plasma 9 near a wafer holding electrode 14 with a relatively large degree of wall reduction.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供通过反应器容器减少杂质的等离子体处理设备和处理方法，保持等离子体稳定性。解决方案：在等离子体处理设备中，反应室1中的内壁101的侧壁的90％被电介质物质102覆盖，并且区域尺寸小于或等于内壁101的侧壁的10％以直流电流流过等离子体的方式设置。由导电材料21构成的直流接地在等离子体的浮动电位（或等离子体密度）高于晶片保持电极14附近的等离子体9的（或等离子体密度）的位置处接地，具有较大程度的墙壁减少。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2005056936A Vacuum processing apparatus, and cleaning method thereof 有权
标题翻译：真空处理装置及其清洁方法
公开(公告)号：JP2005056936A
公开(公告)日：2005-03-03
申请号：JP2003206498
申请日：2003-08-07
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： TETSUKA TSUTOMU , IKENAGA KAZUYUKI , KIKKAI MOTOHIKO
IPC分类号： B08B3/10 , C23C16/44 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a vacuum processing apparatus which has a means to clean the inside of a vacuum container efficiently and uniformly.
SOLUTION: An RF electrode 15 for cleaning, which is covered with dielectrics 16, is arranged in the vacuum container 1, and high frequency is applied thereto. Control is so performed with a power controller 62 that magnetic lines of force mf which pass the RF electrode 15 for cleaning intersect a cleaning region by magnetic field generation coils 22-1, 22-2 for cleaning which are magnetic field generating means. As a result, secondary electrons e emitted from the RF electrode 15 for cleaning move along the magnetic lines of force mf, and cleaning irradiation is performed to a specific part.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种真空处理装置，其具有有效且均匀地清洁真空容器内部的装置。解决方案：在真空容器1中布置有用电介质16覆盖的用于清洁的RF电极15，并向其施加高频。用功率控制器62进行控制，通过用于清洁的RF电极15的磁力线mf通过作为磁场产生装置的清洁用磁场产生线圈22-1,22-2与清洁区域相交。结果，从用于清洁的RF电极15发射的二次电子e沿着磁力线mf移动，并且对特定部分进行清洁照射。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2011077292A Plasma processing apparatus 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：JP2011077292A
公开(公告)日：2011-04-14
申请号：JP2009227142
申请日：2009-09-30
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： TAMURA HITOSHI , ISOMURA RYOICHI , TETSUKA TSUTOMU
IPC分类号： H01L21/3065 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To achieve uniform plasma processing in a large range by optimizing a distribution of microwave regardless of change in a plasma processing condition.
SOLUTION: A microwave supply means supplies microwave into a vacuum processing chamber to produce plasma. An introduction part of the microwave supply means introducing microwave to the processing chamber includes a circularly polarized wave generator which converts the microwave of linearly polarized wave into the microwave of circularly polarized wave. The circularly polarized wave generator includes a square input-side wave guide tube 301 which operates at a minimum order mode, a regular polygonal or circular output-side wave guide tube 306 which operates at a minimum order mode, and a regular polygonal or circular phase adjusting wave guide tube 303 capable of propagating a plurality of linearly polarized waves of different planes of polarization at the same time. The phase adjusting wave guide tube includes adjusting means 304 and 305 which adjusts the phase or amplitude of one of linearly polarized waves of different polarized wave planes.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：通过优化微波的分布，而不管等离子体处理条件的变化如何，在大范围内实现均匀的等离子体处理。解决方案：微波提供装置将微波提供给真空处理室以产生等离子体。向处理室引入微波的微波提供装置的介绍部分包括将线偏振波的微波转换成圆偏振波的微波的圆偏振波发生器。圆偏振波发生器包括以最小订货模式操作的方形输入侧波导管301，以最小订货模式操作的规则多边形或圆形输出侧波导管306和正多边形或圆形相位能够同时传播不同极化面的多个线偏振波的调整波导管303。相位调整波导管包括调节装置304和305，其调节不同极化波平面的线偏振波之一的相位或幅度。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2010056114A Plasma treatment apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：JP2010056114A
公开(公告)日：2010-03-11
申请号：JP2008216344
申请日：2008-08-26
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： TETSUKA TSUTOMU , FURUSE MUNEO
IPC分类号： H01L21/3065 , C23C16/52 , H05H1/00 , H05H1/46
CPC分类号： H01J37/3299 , H01J37/321 , H01J37/32935
摘要： PROBLEM TO BE SOLVED: To measure the plasma state of a plasma treatment apparatus with high sensitivity and high accuracy, and to perform treatment stably for a long period of time. SOLUTION: The plasma treatment apparatus includes: a sheet-like electrode 21 for receiving high frequency signals from plasma 2; a signal line 31 connected to the electrode 21; a signal output means for outputting the high frequency signals from the electrode 21 to the outside; and a control means comprising a physical amount detection part 22 for detecting a target physical amount from the high frequency signals, a measurement data storage part 24 for storing measurement data in the past or the like, a measurement processing part 23 for comparing the measurement data in the past with new measurement data detected in the detection part 22 and outputting the signal of the variation amount of the plasma and a control part 16 for operating an apparatus parameter corresponding to the signal from the measurement processing part 22 and executing control so as to stabilize the plasma state. The sheet-like electrode 21 and the signal line 31 are formed between dielectric protective films formed in at least two layers on the surface of the inner wall/the surface of the inner cylinder 5 of a vacuum treatment chamber 1 in contact with the plasma 2 and the sheet-like electrode 21 outputs an electric field and a magnetic field. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：以高灵敏度和高精度测量等离子体处理装置的等离子体状态，并且长时间稳定地进行处理。解决方案：等离子体处理装置包括：用于从等离子体2接收高频信号的片状电极21; 连接到电极21的信号线31; 信号输出装置，用于将来自电极21的高频信号输出到外部; 以及控制装置，包括用于从高频信号中检测目标物理量的物理量检测部分22，用于存储过去测量数据的测量数据存储部分等，测量处理部分23，用于将测量数据过去检测部分22中检测到新的测量数据，并输出等离子体的变化量的信号和用于操作与来自测量处理部分22的信号相对应的设备参数的控制部分16，并执行控制，以便稳定等离子体状态。片状电极21和信号线31形成在与等离子体2接触的真空处理室1的内壁/内筒5的内壁/表面的至少两层中形成的介电保护膜之间并且片状电极21输出电场和磁场。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2010056113A Cleaning apparatus and cleaning method 有权
标题翻译：清洁装置和清洁方法
公开(公告)号：JP2010056113A
公开(公告)日：2010-03-11
申请号：JP2008216343
申请日：2008-08-26
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： IKENAGA KAZUYUKI , TETSUKA TSUTOMU , FURUSE MUNEO
IPC分类号： H01L21/3065 , C23C16/44
CPC分类号： H01L21/67028 , C23C16/4407 , H01L21/67092
摘要： PROBLEM TO BE SOLVED: To provide a cleaning apparatus for removing foreign matters existing between fine roughness on an insulator surface, coated on the metal surface of a vacuum processing apparatus. SOLUTION: The cleaning apparatus includes an adhesive sheet 5 provided with a base 51 and an adhesive surface 52, a conductive sheet 7 in contact with the base 51, and a pressing member 11 for pressing the conductive sheet 7 to the adhesive sheet 5, and a voltage application mechanism 9 for applying a positive or negative voltage to the conductive sheet 7 and a pressing force adjusting mechanism 8 for pressing the adhesive sheet 5 to the curved surface 10 of the vacuum processing apparatus. The pressing member 11 presses the conductive sheet 7 and the adhesive sheet 5, by a pressing force adjusted in the pressing force adjusting mechanism 8, so that the foreign matters stuck to an insulator 10 are removed by the closely stuck adhesive surface 52 of the adhesive sheet 5 and the curved surface of the insulator 10, and the foreign matters stuck to the insulator 10 are absorbed and removed by an electrostatic suction force, generated by applying a positive or negative voltage to the conductive sheet 7. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于去除涂覆在真空处理设备的金属表面上的绝缘体表面上的细微粗糙度之间存在的异物的清洁设备。解决方案：清洁装置包括设置有基部51和粘合表面52的粘合片5，与基部51接触的导电片7和用于将导电片7压到粘合片的按压部件11 以及用于向导电片7施加正电压或负电压的电压施加机构9和用于将粘合片5压到真空处理装置的曲面10的按压力调节机构8。按压构件11通过在按压力调节机构8中调节的按压力来挤压导电片7和粘合片5，使得粘附到绝缘体10的异物通过粘合剂的紧密粘合的粘合面52除去片5和绝缘体10的曲面，并且通过对导电片7施加正电压或负电压而产生的静电吸力来吸附和去除粘附到绝缘体10上的异物。版权所有（ C）2010，JPO＆INPIT

6. 发明专利

JP2010016124A Plasma treatment device, and plasma treatment method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：JP2010016124A
公开(公告)日：2010-01-21
申请号：JP2008173762
申请日：2008-07-02
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： MORI MASASHI , TETSUKA TSUTOMU , ITABASHI NAOSHI
IPC分类号： H01L21/3065
CPC分类号： H01J37/32165 , H01J37/32091 , H01J37/32155 , H01J37/32192 , H01J37/32935 , H01J37/3299
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment device provided with a means to detect the quantity of ion flux of plasma (plasma density) related to mass-production stability and machine difference reduction, and a device condition related to its distribution.
SOLUTION: This plasma treatment device equipped with a vacuum vessel 108, a gas introduction means 111, a pressure control means, a plasma source power source 101, a lower electrode 113 for mounting a treatment object 112 in the vacuum vessel, and a high-frequency bias power source 117 includes: a probe high-frequency oscillation means 103 oscillating an oscillation frequency different from those of the plasma source power source 101 and the high-frequency bias power source 117 into a plasma treatment chamber; high-frequency reception parts 114-116 receiving the high-frequency waves oscillated from the probe high-frequency oscillation means 103 by surfaces contacting the plasma; and a high-frequency analysis means 110 to measure impedance, reflectivity and transmittance on an oscillation frequency basis in an electric circuit formed out of the probe high-frequency oscillation means 103 and the reception parts 114-116.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有检测与批量生产稳定性和机器差异降低有关的等离子体离子通量（等离子体密度）的装置的等离子体处理装置，以及与其分布有关的装置状态。解决方案：该等离子体处理装置配备有真空容器108，气体引入装置111，压力控制装置，等离子体源电源101，用于将处理对象112安装在真空容器中的下部电极113，以及高频偏置电源117包括：将与等离子体源电源101和高频偏置电源117不同的振荡频率振荡到等离子体处理室的探头高频振荡装置103; 高频接收部分114-116通过接触等离子体的表面接收从探针高频振荡装置103振荡的高频波; 以及高频分析装置110，用于在由探针高频振荡装置103和接收部分114-116形成的电路中测量基于振荡频率的阻抗，反射率和透射率。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2008112912A Plasma processing apparatus 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：JP2008112912A
公开(公告)日：2008-05-15
申请号：JP2006295986
申请日：2006-10-31
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： KAWAGUCHI TADAYOSHI , TETSUKA TSUTOMU
IPC分类号： H01L21/3065 , C23C16/44 , H01L21/205 , H01L21/304 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus that reduces pollution caused by suppression of foreign matters that are produced from a wall material of a processing chamber, contributes to the uniformity of plasma distribution, and does not require precise management of the processing chamber. SOLUTION: The plasma processing apparatus uses plasma generated in the processing chamber 100 to process a sample placed on a sample stage 109 that is disposed inside the processing chamber 100. In the plasma processing apparatus, the processing chamber 100 is constituted of an inner wall member with a conic inner shape, which is separated into two parts, an upper inner wall member 116 and a lower inner wall member 124. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种等离子体处理装置，其减少由抑制由处理室的壁材料产生的异物引起的污染，有助于等离子体分布的均匀性，并且不需要精确管理处理室。解决方案：等离子体处理装置使用处理室100中产生的等离子体处理放置在处理室100内部的样品台109上的样品。在等离子体处理装置中，处理室100由具有锥形内部形状的内壁构件，其被分成两部分，上内壁构件116和下内壁构件124.版权所有（C）2008，JPO和INPIT

8. 发明专利

JP2011100815A Plasma etching method, and plasma etching apparatus 有权
标题翻译：等离子体蚀刻方法和等离子体蚀刻装置
公开(公告)号：JP2011100815A
公开(公告)日：2011-05-19
申请号：JP2009253770
申请日：2009-11-05
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： SATAKE MAKOTO , MAEDA KENJI , YOKOGAWA KATANOBU , TETSUKA TSUTOMU , USUI TAKETO , NISHIO RYOJI
IPC分类号： H01L21/3065
CPC分类号： G11B5/84 , C23F4/00 , H01F10/14 , H01F10/16 , H01J37/321 , H01J37/32146 , H01J37/32449 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus for efficiently processing a magnetic film of Fe, Co, Ni or the like formed on a substrate and a nonvolatile metal containing those elements by plasma etching using gas containing C and O as constituents.
SOLUTION: When processing, in a vacuum vessel 401, a magnetic film of Fe, Co, Ni or the like formed on a substrate 402 and a nonvolatile metal containing those elements by using a gas containing a plasma generation gas for generating plasma 414 and a gas containing C and O as constituents, power applied to an antenna 411 for generating the plasma 414 is subjected to pulse modulation; introduction of the gas containing C and O as constituents into the vacuum vessel 401 is suppressed when antenna power is high; and the introduction of the gas containing C and O as constituents is synchronized with the antenna power subjected to pulse modulation to introduce the gas containing C and O as constituents into the vacuum vessel when the antenna power is low.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种方法和装置，用于通过使用含有C和O的气体等离子体蚀刻在基板上形成的Fe，Co，Ni等磁性膜和含有这些元素的非挥发性金属，成分。解决方案：在真空容器401中，通过使用包含用于产生等离子体的等离子体产生气体的气体，在基板402上形成的Fe，Co，Ni等的磁性膜和含有这些元素的非挥发性金属 414和包含C和O的气体作为组成，施加到用于产生等离子体414的天线411的功率经受脉冲调制; 当天线功率高时，将含有C和O作为组分的气体引入真空容器401中被抑制; 并且包含C和O作为组分的气体的引入与经脉冲调制的天线功率同步，当天线功率低时，将含有C和O的气体作为组分引入真空容器中。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2007059567A Plasma treatment apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：JP2007059567A
公开(公告)日：2007-03-08
申请号：JP2005242080
申请日：2005-08-24
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： TETSUKA TSUTOMU , MASUDA TOSHIO , ITABASHI NAOSHI , SUMIYA MASANORI , FUJII TAKASHI
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H01J37/32082 , C23C16/4401 , C23C16/45565 , C23C16/505 , H01J37/3244 , H01J37/32477 , H01J37/32495 , H01J37/32504 , H01J37/32559
摘要： PROBLEM TO BE SOLVED: To reduce the heavy metal contamination due to the corrosion of and the plasma damage to the members constituting a high-frequency electrode and a gas supply unit caused by a reactive gas in a plasma treatment apparatus.
SOLUTION: This plasma treatment apparatus comprises a treatment chamber 1 for carrying out plasma treatment for a treated body 4, gas supplying means 17, 16, and 11 for supplying a gas to the treatment chamber 1, and an antenna electrode 10 for supplying a high frequency for discharging the gas to change it into plasma. The surface of the gas supplying means in contact with the plasma consists of a gas discharging plate 11 having gas discharging holes. A protective film 12 is formed on a part of the surface or on the whole surface of a conductor 10 in contact with the gas on the antenna electrode side of the gas supplying means according to ceramic thermal spraying containing no heavy metal.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了减少由等离子体处理装置中的反应性气体引起的构成高频电极和气体供给单元的构件的腐蚀和等离子体损伤造成的重金属污染。解决方案：该等离子体处理装置包括用于对处理体4进行等离子体处理的处理室1，用于向处理室1供给气体的气体供给装置17,16和11，以及用于提供用于排出气体的高频以将其改变为等离子体。与等离子体接触的气体供给装置的表面由具有气体排出孔的气体排出板11组成。根据不含重金属的陶瓷热喷涂，在与气体供给装置的天线电极侧的气体接触的导体10的表面或整个表面的一部分上形成保护膜12。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2006054148A Plasma treatment device 有权
标题翻译：等离子体处理装置
公开(公告)号：JP2006054148A
公开(公告)日：2006-02-23
申请号：JP2004236532
申请日：2004-08-16
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ITABASHI NAOSHI , TETSUKA TSUTOMU , ITO ATSUSHI
IPC分类号： H05H1/46 , H01L21/3065 , H03H7/40 , H05H1/00
CPC分类号： H01J37/3299 , H01J37/32183 , H01J37/32211 , H01J37/32935
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment device capable of detecting fluctuation of its treatment characteristics and restraining the fluctuation. SOLUTION: The plasma treatment device provided with a reaction vessel 1 with its inner side wall insulated, a sample stand 5 arranged in the reaction vessel, and an antenna 10, applying plasma treatment on a sample loaded on the sample stand by supplying high-frequency power to the antenna from a plasma-generating power source and plasmolyzing treatment gas introduced in the reaction vessel, is further provided with a matching unit 11 for taking impedance matching between the plasma-generating power source and a load circuit including the antenna. The matching unit, provided with a sensor for measuring impedance characteristics of the load circuit side, changes a matching attainment point and a matching operation locus reaching the matching attainment point as the load side is seen from an input end of the matching unit in accordance with a measurement value of the sensor. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供能够检测其处理特性的波动并抑制波动的等离子体处理装置。解决方案：设置有反应容器1的等离子体处理装置，其内侧壁被隔离，设置在反应容器中的样品台5和天线10，通过供给装载在样品台上的样品上进行等离子体处理来自等离子体发生电源的天线的高频电源和引入到反应容器中的等离子体处理气体进一步设置有匹配单元11，用于在等离子体产生电源和包括天线的负载电路之间进行阻抗匹配。具有用于测量负载电路侧的阻抗特性的传感器的匹配单元根据匹配单元的输入端从匹配单元的输入端看到匹配的达到点和匹配操作轨迹，从而到达匹配的达到点传感器的测量值。版权所有（C）2006，JPO＆NCIPI

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