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1. 发明专利

JP2014035229A Method and device for detecting biomolecule, and device for analysis 有权
标题翻译：用于检测生物分子的方法和装置，以及用于分析的装置
公开(公告)号：JP2014035229A
公开(公告)日：2014-02-24
申请号：JP2012175572
申请日：2012-08-08
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： SAITO TOSHIRO , IMAI KENTA , IMAI KYOKO , IMAI KAZUNARI , YANAGI ITARU , YANAGAWA YOSHIMITSU , ANDO MASAHIKO , ITABASHI NAOSHI
IPC分类号： G01N27/02 , G01N27/00 , G01N33/543 , G01N37/00
CPC分类号： G01N27/4145 , G01N27/4148 , G01N33/48721 , G01N33/543 , G01N33/54306 , G01N37/00
摘要： PROBLEM TO BE SOLVED: To provide a method and a device for detecting biomolecule in a wide dynamic range with high sensitivity and high throughput without requiring density adjustment of a sample in advance.SOLUTION: A charge holding body is specifically connected to biomolecule of a detection object, current changes generated when their composite passes through a fine pore are measured, and the biomolecule of the detection object is detected one by one. Detection of a biomolecule sample becomes possible with high throughput by arranging a detection part in array.
摘要翻译：要解决的问题：提供一种用于在具有高灵敏度和高产量的宽动态范围内检测生物分子的方法和装置，而不需要预先对样品进行密度调节。解决方案：电荷保持体特异性地连接到检测的生物分子测量其复合体通过细孔时产生的当前变化，并逐个检测检测对象的生物分子。通过将检测部件布置在阵列中，可以以高产量检测生物分子样品。

2. 发明专利

JP2009099496A Plasma treatment device, and method of detecting its condition 有权
标题翻译：等离子体处理装置及其检测方法
公开(公告)号：JP2009099496A
公开(公告)日：2009-05-07
申请号：JP2007272396
申请日：2007-10-19
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： TETSUKA TSUTOMU , ITABASHI NAOSHI , ITO ATSUSHI
IPC分类号： H05H1/00 , H01L21/3065 , H01L21/31 , H05H1/46
CPC分类号： H01J37/32082 , H01J37/321 , H01J37/32174 , H01J37/32935
摘要： PROBLEM TO BE SOLVED: To detect and manage the status of a plasma processing apparatus with high sensitivity so as to enable long-term stable processing. SOLUTION: A plasma processing apparatus comprises: a vacuum processing chamber 10; a plasma generating high frequency power supply 16; and a measurement device unit 3 for estimating the status of the apparatus via reflected waves 54 of the incident waves 53 reflected from the processing apparatus, wherein the measurement device unit 3 includes a waveform generator 32, a VCO 33, a directional coupler 34, a detector 35 and a measurement data processing unit 36. In the plasma processing apparatus, frequency-swept high frequency waves 53 for measurement are introduced to the processing chamber where no plasma discharge is performed, so as to monitor the change of absorption spectrum frequency of the reflected waves 54, thereby monitoring the change in status of the processing apparatus. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：检测和管理具有高灵敏度的等离子体处理装置的状态，以便能够进行长期稳定的处理。解决方案：等离子体处理设备包括：真空处理室10; 等离子体产生高频电源16; 以及测量装置单元3，用于通过从处理装置反射的入射波53的反射波54估计装置的状态，其中测量装置单元3包括波形发生器32，VCO 33，定向耦合器34，检测器35和测量数据处理单元36.在等离子体处理装置中，将用于测量的频率扫描高频波53引入到不进行等离子体放电的处理室中，以监测吸收光谱频率的变化反射波54，从而监视处理装置的状态变化。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2005093850A Plasma processing apparatus and method for cleaning vacuum container 审中-公开
标题翻译：等离子体处理装置和清洁真空容器的方法
公开(公告)号：JP2005093850A
公开(公告)日：2005-04-07
申请号：JP2003327293
申请日：2003-09-19
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ONO TETSUO , ITABASHI NAOSHI , KIKKAI MOTOHIKO , SHIMOMURA TAKAHIRO
IPC分类号： H01L21/3065 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To shorten the cleaning time of materials stacked in a processing apparatus using plasma. SOLUTION: A suction type cleaner 109 is installed in a vacuum container 103 for generating plasma to perform suction cleaning of the inside of the container 103 while leading inert gas from a gas lead-in pipe 114 into the container 103 so that pressure in the container 103 is fixedly held at almost one pressure. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：缩短堆叠在使用等离子体的处理装置中的材料的清洗时间。解决方案：吸入式清洁器109安装在用于产生等离子体的真空容器103中，以将惰性气体从气体引入管114引入容器103中，从而对容器103的内部进行抽吸清洗，使得压力在容器103中固定地保持几乎一个压力。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2004214609A Method of treating plasma processing apparatus 有权
标题翻译：处理等离子体加工装置的方法
公开(公告)号：JP2004214609A
公开(公告)日：2004-07-29
申请号：JP2003345974
申请日：2003-10-03
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： SHIRAYONE SHIGERU , ONO TETSUO , ITABASHI NAOSHI , KIKKAI MOTOHIKO , ABE TAKAHIRO , SHIMOMURA TAKAHIRO , KITSUNAI HIROYUKI
IPC分类号： H05H1/46 , H01L21/304 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To remove aluminum-based reaction products, aluminum sputtered from material members inside the process chamber or the like, adhering inside the process chamber. SOLUTION: A method of treating a plasma processing apparatus is constituted such that high-frequency power is applied to a silicon wafer 17 loaded on an object-to-be-processed loading electrode 4, while hydrogen bromide gas and chlorine gas are introduced into the inside of the process chamber 1 to generate plasma to remove aluminum-based deposits adhering inside the process chamber, wherein the plasma processing apparatus 1 comprises plasma-generating means 3, 8, 10, 13 to 15 for generating plasma inside the process chamber, a high-frequency-power applying means 18 for applying high-frequency power to an object 17 to be processed, the process chamber 1 which is connected to an evacuation device 7 to evacuate the inside, and a gas feeding unit (not shown in the drawing). COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：从处理室内部的材料部件溅射的铝基反应产物中去除，粘附在处理室内部。解决方案：处理等离子体处理装置的方法被构造成使得高频功率被施加到装载在待处理物体上的负载电极4上的硅晶片17，而溴化氢气体和氯气是引入处理室1的内部以产生等离子体以除去附着在处理室内的铝基沉积物，其中等离子体处理装置1包括用于在工艺中产生等离子体的等离子体产生装置3,8,10,13至15 用于将高频电力施加到待处理物体17的高频电力施加装置18，连接到排气装置7以将内部抽真空的处理室1和气体供给单元（未示出）在图中）。版权所有（C）2004，JPO＆NCIPI

5. 发明专利

JP2015059929A 生体分子計測装置有权
标题翻译：生物分子测量装置
公开(公告)号：JP2015059929A
公开(公告)日：2015-03-30
申请号：JP2013196186
申请日：2013-09-20
申请人：株式会社日立ハイテクノロジーズ , Hitachi High-Technologies Corp
发明人： YANAGAWA YOSHIMITSU , ITABASHI NAOSHI , TAKEMURA RIICHIRO , UTAKA SONOKO , KAWAHARA TAKAYUKI , TAKEDA KENICHI
IPC分类号： G01N27/414 , C12M1/00 , C12M1/34 , G01N25/20 , G01N27/28
CPC分类号： G01N27/4145
摘要：【課題】高精度な測定が可能な生体分子計測装置を提供する。【解決手段】生体分子計測装置は、生体分子試料と化学反応してイオンを生成させる試薬を送出する送液装置203と、マトリクス状に配置され、イオンの濃度を測定する複数の半導体センサを有するセルアレイ206と、複数の半導体センサのそれぞれの上に設けられ、送液装置203から注入される生体分子試料を含む溶液で満たされた複数のウェルの温度を調節する温調機構207とを具備する。生体分子計測装置は、送液装置203と温調機構207を制御するコントローラ212を、更に具備し、コントローラ212は、ウェル内の溶液に供給される熱量とウェル内の溶液から発散される熱量との間の差が、複数のウェルのそれぞれにおいて等しくなるように、温調機構207を制御する。【選択図】図2
摘要翻译：要解决的问题：提供能够高精度测量的生物分子测量装置。解决方案：一种生物分子测量装置，包括：供给装置203，其供给与生物分子样品进行化学反应以产生离子的试剂; 布置在矩阵中的单元阵列206，并具有用于测量离子浓度的多个半导体传感器; 以及设置在多个半导体传感器的每一个上的温度调节机构207，并且调节填充有从液体供给装置203注入的含有生物分子样品的溶液的多个孔的温度。生物分子测量装置还包括控制器212，其控制液体供给装置203和温度调节机构207.控制器212控制温度调节机构207，使得提供给井中的溶液的热量与从井中的溶液呼出的热量之间的差为在多个孔中的每一个中均匀。

6. 发明专利

JP2013175784A Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：JP2013175784A
公开(公告)日：2013-09-05
申请号：JP2013114784
申请日：2013-05-31
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： MORI MASASHI , KOTO NAOYUKI , ITABASHI NAOSHI
IPC分类号： H01L21/3065 , H05H1/00 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus or a dry etching method which etches a film structure having a step with high accuracy.SOLUTION: A plasma processing apparatus comprises: a vacuum vessel 107; a lower electrode 113 disposed in a processing chamber in the vacuum vessel, the lower electrode 113 where a wafer 112 to be etched is placed on its upper surface; bias application devices 118, 120 supplying high-frequency power for forming bias potential to the lower electrode 113; gas supply means 111 introducing a reactive gas into the processing chamber; electric field supply means 101 to 103 supplying electric fields for generating plasma to the processing chamber; and an adjustment device 127 adjusting the distribution of energy of ions in plasma entering the wafer 112 with the high-frequency power.
摘要翻译：要解决的问题：提供等离子体处理装置或干蚀刻方法，其蚀刻具有高精度步骤的膜结构。解决方案：等离子体处理装置包括：真空容器107; 设置在真空容器中的处理室中的下电极113，其上要被蚀刻的晶片112放置在其上表面的下电极113; 偏压施加装置118,120向下部电极113提供用于形成偏置电位的高频电力; 气体供给装置111将反应性气体引入到处理室中; 电场供给单元101〜103，向处理室供给用于产生等离子体的电场; 以及调整装置127，其利用高频功率来调节进入晶片112的等离子体中的离子的能量分布。

7. 发明专利

JP2010243223A Nucleic acid analyzing device and nucleic acid analyzer 有权
标题翻译：核酸分析装置和核酸分析仪
公开(公告)号：JP2010243223A
公开(公告)日：2010-10-28
申请号：JP2009089671
申请日：2009-04-02
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： OBARA TAKAYUKI , SAITO TOSHIRO , NARAHARA MASATOSHI , ITABASHI NAOSHI , FUJITA TAKESHI , YOSHIDA HIROSHI
IPC分类号： G01N21/64 , C12M1/00
CPC分类号： G01N21/648
摘要： PROBLEM TO BE SOLVED: To detect the fluorescence, which is emitted from fluorescent dye by irradiation with exciting light with a wavelength of about 500 nm, with high precision in a nucleic acid analyzing device.
SOLUTION: In the nucleic acid analyzing device having a metal body producing localized surface plasmon by light irradiation, the material of the metal body consists of metal selected from any of ruthenium, iridium, palladium and rhodium or an alloy of the metals. These metals efficiently produce localized surface plasmon with respect to light with a wavelength of about 500 nm. Further, as the metals have extremely low ionization tendency and are very chemically stable, they can be used in a reaction solution for a long time. The present invention enables fluorescent measurement of nucleic acid stably and with high efficiency using light with the wavelength of about 500 nm.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：通过在核酸分析装置中以高精度照射波长约500nm的激发光来检测从荧光染料发出的荧光。解决方案：在具有通过光照射产生局部表面等离子体的金属体的核酸分析装置中，金属体的材料由选自钌，铱，钯和铑中的任何一种的金属或金属的合金组成。相对于约500nm波长的光，这些金属有效地产生局部表面等离子体激元。此外，由于金属具有极低的电离倾向并且非常化学稳定，所以它们可长时间地用于反应溶液中。本发明能够使用波长为约500nm的光稳定且高效地进行核酸的荧光测定。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2007294905A Method of manufacturing semiconductor and etching system 审中-公开
标题翻译：制造半导体和蚀刻系统的方法
公开(公告)号：JP2007294905A
公开(公告)日：2007-11-08
申请号：JP2007071122
申请日：2007-03-19
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： HIROTA KOSA , MORI MASASHI , KOTO NAOYUKI , ITABASHI NAOSHI , MASUDA TOSHIO
IPC分类号： H01L21/3065 , H01L21/28 , H01L21/3213 , H01L29/423 , H01L29/49 , H01L29/78
CPC分类号： H01L21/32139 , H01L21/28123
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor having a sparse pattern region and a dense pattern region, wherein independent control of the dimensions of the spare and dense patterns is enabled with good reproducibility and long-term fluctuations of both the post-exposure dimension of each pattern and the dimension of a gate electrode can be suppressed.
SOLUTION: The method of manufacturing a semiconductor device includes: a film-forming step of forming a stacked film on a semiconductor substrate having both a region in which a mask pattern is sparsely formed, and a region in which a mask pattern is formed densely; a lithography step S1 of forming a mask pattern; a cleaning step S11C of removing deposits in the device, and a trimming step S3 of thinning lines of the mask pattern; and dry-etching steps S4, S5 of transferring the mask pattern on the stacked film. A deposition step S2 is installed to follow a seasoning step S11S in either before or after the trimming step S3.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种制造具有稀疏图案区域和致密图案区域的半导体的方法，其中可以独立控制备用和致密图案的尺寸，具有良好的再现性和长期波动可以抑制每个图案的曝光后尺寸和栅电极的尺寸。解决方案：半导体器件的制造方法包括：在半导体衬底上形成叠层膜的膜形成步骤，其具有稀疏形成掩模图案的区域和掩模图案的区域形成密集; 形成掩模图案的光刻步骤S1; 去除装置中的沉积物的清洁步骤S11C和掩模图案的细化线的修整步骤S3; 以及将掩模图案转印在层叠膜上的干蚀刻步骤S4，S5。安装沉积步骤S2以在修整步骤S3之前或之后跟随调味步骤S11S。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2007053391A Method of manufacturing semiconductor integrated circuit device 审中-公开
标题翻译：制造半导体集成电路器件的方法
公开(公告)号：JP2007053391A
公开(公告)日：2007-03-01
申请号：JP2006263706
申请日：2006-09-28
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： MORI MASASHI , TSUTSUMI TAKASHI , IZAWA MASARU , ITABASHI NAOSHI
IPC分类号： H01L29/78 , H01L21/28 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor integrated circuit device having a fine pattern formation without causing increase in the chip cost or throughput degradation.
SOLUTION: A method of manufacturing a semiconductor integrated circuit device comprises a step of patterning a gate (an electrode or wiring). After a hard mask on a gate is patterned with a resist mask, the resist mask is removed. Then, by using the hard mask, a side surface of a gate material is thinned under a dry etching condition leaving no reaction product on the side surface of the gate material, thereby forming an I-type gate.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种具有精细图案形成的半导体集成电路器件的制造方法，而不会导致芯片成本或产量降低的增加。解决方案：制造半导体集成电路器件的方法包括对栅极（电极或布线）进行构图的步骤。在栅极上的硬掩模用抗蚀剂掩模图案化之后，去除抗蚀剂掩模。然后，通过使用硬掩模，栅极材料的侧表面在干蚀刻条件下变薄，在栅极材料的侧表面上不产生反应产物，从而形成I型栅极。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2013232680A Plasma processing apparatus 有权
标题翻译：等离子体加工设备
公开(公告)号：JP2013232680A
公开(公告)日：2013-11-14
申请号：JP2013150455
申请日：2013-07-19
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： OMORI TAKESHI , ITABASHI NAOSHI , KOTO NAOYUKI , MIYA TAKESHI
IPC分类号： H01L21/3065 , H01L21/683 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To place a heating mechanism heating a sample base outer peripheral cover and a cooling mechanism cooling the cover in the sample base outer peripheral cover and adjust a temperature of the sample base outer peripheral cover independently from a temperature of a sample at a high speed.SOLUTION: A plasma processing apparatus includes: a vacuum treatment chamber; a sample base 1 disposed in the vacuum treatment chamber, the sample base 1 on which a sample 2 is placed; and gas introduction means introducing a process gas into the vacuum treatment chamber, supplies high frequency power to the vacuum treatment chamber to generate plasma, and performs plasma processing to the sample 2 placed on the sample base by using the generated plasma. The sample base 1 includes: a placement part on which the sample 2 is placed; and a ring shaped sample base outer peripheral cover 3 disposed at an outer periphery of the placement part. The sample base outer peripheral cover 3 includes a heating mechanism 4 and a cooling mechanism 5 therein. The heating mechanism 4 heats the sample base outer peripheral cover 3 and the cooling mechanism 5 cools the sample base outer peripheral cover 3.
摘要翻译：要解决的问题：放置加热机构，加热样品基底外周盖和冷却机壳，将样品基底外周盖上的盖冷却，并且与样品的外部温度独立于样品的温度调节高速。解决方案：等离子体处理装置包括：真空处理室; 设置在真空处理室中的样品基体1，放置样品2的样品基体1; 并且气体引入装置将工艺气体引入真空处理室，向真空处理室供给高频电力以产生等离子体，并通过使用所产生的等离子体对放置在样品基底上的样品2进行等离子体处理。样品基体1包括：放置样品2的放置部分; 以及设置在放置部的外周的环状的基材外周罩3。样品基底外周盖3包括加热机构4和冷却机构5。加热机构4加热试样基材外周盖3，冷却机构5冷却试样基材外周盖3。

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