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1. 发明专利

JP2013080643A Plasma processing device 有权
标题翻译：等离子体加工装置
公开(公告)号：JP2013080643A
公开(公告)日：2013-05-02
申请号：JP2011220611
申请日：2011-10-05
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ZOKU YUSAKU , NISHIO RYOJI , KAWAGUCHI TADAYOSHI
IPC分类号： H05H1/46 , H01L21/3065
CPC分类号： H01J37/3211 , H01J37/32651
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing device capable of uniformly performing plasma-processing on a sample.SOLUTION: A plasma processing device comprises: a vacuum processing chamber for performing plasma-processing on a sample; a dielectric window forming an upper face of the vacuum processing chamber; gas introduction means for introducing gas in the vacuum processing chamber; a sample table arranged in the vacuum processing chamber for locating the sample; an induction coil 4d provided at an upper part of the dielectric window; and a high frequency power source for supplying high frequency power to the induction coil 4d. The plasma processing device comprises a flat plate conductor 12 arranged at a lower part of the induction coil 4d. The induction coil 4d has a crossing power-feeding part, and the conductor 12 is arranged at the lower part of the power feeding part, adjusts distribution of an induction magnetic field of the power feeding part of the induction coil 4d, and corrects plasma distribution on the sample.
摘要翻译：要解决的问题：提供能够对样品进行等离子体处理的等离子体处理装置。解决方案：等离子体处理装置包括：用于对样品进行等离子体处理的真空处理室; 形成真空处理室的上表面的电介质窗; 用于在真空处理室中引入气体的气体引入装置; 布置在真空处理室中的用于定位样品的样品台; 设置在电介质窗的上部的感应线圈4d; 以及用于向感应线圈4d供给高频电力的高频电源。等离子体处理装置包括布置在感应线圈4d的下部的平板导体12。感应线圈4d具有交叉供电部，导体12配置在供电部的下部，调整感应线圈4d的供电部的感应磁场的分布，并且校正等离子体分布在样品上。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2011108764A Plasma processing apparatus 有权
标题翻译：等离子体加工设备
公开(公告)号：JP2011108764A
公开(公告)日：2011-06-02
申请号：JP2009260563
申请日：2009-11-16
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： HIROMI KAZUYUKI , TAMURA SATOYUKI , YOKOGAWA KATANOBU , ICHINO TAKAMASA , NISHIO RYOJI
IPC分类号： H01L21/3065 , C23C14/34 , C23C16/509 , H01L21/205 , H01L21/31 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma etching apparatus that achieves long-term stable performance by reducing the non-uniformity of the electric field in the outer peripheral part of a substrate to be processed by plasma. SOLUTION: A plasma processing device has a focus ring provided on an electrode for placing a substrate to be processed thereon while surrounding the outer periphery of the substrate to be processed. The focus ring comprises: a first focus ring made of a conductor and provided on an electrostatic attraction film on the upper surface of the electrode for placing a substrate to be processed thereon; a second focus ring made of a dielectric and provided on the first focus ring; and a third focus ring made of a conductor and provided on the second focus ring. The first focus ring is provided so as to be in contact with plasma while having the upper-surface height almost equal to that of the substrate to be processed. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种等离子体蚀刻装置，其通过降低待等离子体处理的基板的外周部分中的电场的不均匀性而实现长期稳定的性能。解决方案：等离子体处理装置具有设置在用于放置待处理基板的电极上的聚焦环，同时围绕待处理基板的外周。聚焦环包括：由导体制成的第一聚焦环，设置在电极的上表面上的静电吸引膜上，用于放置待处理的基板; 由电介质制成并设置在第一聚焦环上的第二聚焦环; 以及由导体制成并设置在第二聚焦环上的第三聚焦环。第一聚焦环设置成与等离子体接触，同时具有与待处理的基板的上表面高度几何相等的上表面高度。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2009277889A Plasma treatment apparatus and control method of plasma treatment apparatus 审中-公开
标题翻译：等离子体处理装置的等离子体处理装置和控制方法
公开(公告)号：JP2009277889A
公开(公告)日：2009-11-26
申请号：JP2008127820
申请日：2008-05-15
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： KOHAMA SHINJI , TAMURA SATOYUKI , NISHIO RYOJI
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H01J37/32935 , H01J37/32091 , H01J37/3266
摘要： PROBLEM TO BE SOLVED: To provide a means for minimizing problems affecting a substrate to be treated during a stop of plasma in a plasma treatment apparatus using a magnetic field. SOLUTION: The plasma treatment apparatus comprising a high-frequency power source for plasma generation, a bias power source, and a coil power source connected to a coil installed outside a vacuum treatment chamber and producing a magnetic field in the vacuum treatment chamber includes: a magnetic field-measuring means for measuring the intensity of the magnetic field in the vacuum treatment chamber; and a control means for turning off an output ON/OFF signal of the high-frequency power source for plasma generation or bias power source when the intensity of the magnetic field measured after an output ON/OFF signal of the coil power source is turned off decreases down to a predetermined value. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于在使用磁场的等离子体处理装置中使等离子体停止期间影响待处理基板的问题最小化的装置。解决方案：等离子体处理装置包括用于等离子体产生的高频电源，偏置电源和连接到设置在真空处理室外部的线圈的线圈电源，并在真空处理室中产生磁场包括：用于测量真空处理室中的磁场强度的磁场测量装置; 以及控制装置，用于当在线圈电源的输出ON / OFF信号被关断之后测量的磁场的强度被断开时，关闭用于等离子体产生或偏置电源的高频电源的输出ON / OFF信号减小到预定值。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2014044961A Plasma processing equipment 有权
标题翻译：等离子体加工设备
公开(公告)号：JP2014044961A
公开(公告)日：2014-03-13
申请号：JP2013231100
申请日：2013-11-07
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： NISHIO RYOJI
IPC分类号： H05H1/46
摘要： PROBLEM TO BE SOLVED: To improve the uniformity and ignitability of a plasma in plasma processing equipment including a CP source with a large diameter.SOLUTION: The plasma processing equipment comprises: a vacuum processing chamber 1 in which a sample W mounted on a sample table 14 is plasma-processed; a vacuum processing chamber lid 12 provided in an upper part of the vacuum processing chamber 1 and sealing the vacuum processing chamber 1 air-tightly; a high-frequency induction antenna 7 provided outside the vacuum processing chamber 1; magnetic field formation coils 81 and 82 forming a magnetic field in the vacuum processing chamber 1; a high-frequency power supply 51 supplying a high-frequency power to the high-frequency induction antenna 7; and a power supply supplying a power to the magnetic field formation coil 81. The high-frequency induction antenna 7 is divided into n (a natural number equal to or more than two) high-frequency induction antenna elements. The respective element are arranged circumferentially at a regular interval on a plane substantially parallel to a mounting surface of the sample table 14 and each element has delay means 6 sequentially delaying phases of the high-frequency currents flowing in the respective high-frequency induction antenna elements by λ/n when λ is defined as a wavelength of the high-frequency power supply 51.
摘要翻译：要解决的问题：提高包括大直径CP源的等离子体处理设备中的等离子体的均匀性和点火性。解决方案：等离子体处理设备包括：真空处理室1，其中安装在样品台上的样品W 14是等离子体处理的; 真空处理室盖12设置在真空处理室1的上部，并且密封真空处理室1; 设置在真空处理室1外部的高频感应天线7; 在真空处理室1中形成磁场的磁场形成线圈81和82; 向高频感应天线7供给高频电力的高频电源51; 以及向磁场形成线圈81供电的电源。高频感应天线7被分成n（等于或大于2的自然数）的高频感应天线元件。相应的元件在基本上平行于样品台14的安装表面的平面上以规则的间隔布置，并且每个元件具有延迟装置6，其顺序地延迟在各个高频感应天线元件中流动的高频电流的相位当λ被定义为高频电源51的波长时，通过λ/ n。

5. 发明专利

JP2012227398A Plasma processing apparatus 有权
标题翻译：等离子体加工设备
公开(公告)号：JP2012227398A
公开(公告)日：2012-11-15
申请号：JP2011094601
申请日：2011-04-21
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ZOKU YUSAKU , NISHIO RYOJI , KAWAGUCHI TADAYOSHI
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H01J37/32119 , H01J37/321 , H01J37/3211
摘要： PROBLEM TO BE SOLVED: To perform plasma processing that is uniform with respect to a specimen by adjusting an induced magnetic field distribution in an ICP plasma processing apparatus in order to correct a plasma distribution on the specimen.SOLUTION: In the ICP plasma processing apparatus, a conductor 12 is disposed between an induction coil 4 and a dielectric window 1a. The conductor is disposed along the induction coil and is at least partially located in the circumferential direction of the induction coil. The conductor is disposed at a location where induced magnetic field strength is lowered, and at a position to satisfy a relationship of Lp≥Lr, where Lr is a minimum distance from the induction coil to a surface of the conductor, and Lp is a minimum distance from the induction coil to plasma immediately below the dielectric window.
摘要翻译：要解决的问题：为了通过调整ICP等离子体处理装置中的感应磁场分布来进行相对于样品均匀的等离子体处理，以校正样品上的等离子体分布。解决方案：在ICP等离子体处理装置中，导体12设置在感应线圈4和电介质窗1a之间。导体沿着感应线圈设置并且至少部分地位于感应线圈的圆周方向上。导体设置在感应磁场强度降低的位置处，并且在满足Lp≥Lr的关系的位置处，其中Lr是从感应线圈到导体表面的最小距离，并且Lp是最小的从感应线圈到电介质窗口正下方的距离。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2011253916A Plasma processing apparatus 有权
标题翻译：等离子体加工设备
公开(公告)号：JP2011253916A
公开(公告)日：2011-12-15
申请号：JP2010126411
申请日：2010-06-02
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： SAKKA YUSAKU , NISHIO RYOJI , YOSHIOKA TAKESHI
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H05H1/46 , H01J37/321 , H01J37/3211 , H01J37/32651 , H05H2001/463
摘要： PROBLEM TO BE SOLVED: To suppress scraping of a interior wall surface of a vacuum processing chamber or erosion of components in the vacuum processing chamber by suppressing self-bias arising in the interior wall surface of the vacuum processing chamber.SOLUTION: A plasma processing apparatus includes: a vacuum processing chamber; a vacuum processing chamber lid occluding a top of the vacuum processing chamber; an inductive antenna; a Faraday shield disposed between the inductive antenna and the vacuum processing chamber lid; and a high frequency power source applying high frequency power to the inductive antenna. The inductive antenna is divided into two or more. The Faraday shield is divided into the number of division corresponding to the number of the division of the inductive antenna, and by the sole high frequency power source, a high frequency voltage is applied thereto via a matching device.
摘要翻译：要解决的问题：通过抑制在真空处理室的内壁表面中产生的自偏压来抑制真空处理室的内壁表面的刮擦或真空处理室中的部件的侵蚀。解决方案：等离子体处理装置包括：真空处理室; 真空处理室盖封闭真空处理室的顶部; 感应天线; 位于感应天线和真空处理室盖之间的法拉第屏蔽; 以及向感应天线施加高频功率的高频电源。电感天线分为两个或更多。法拉第屏蔽被划分为对应于感应天线的划分数的划分数，并且通过唯一的高频电源，经由匹配装置向其施加高频电压。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2011187902A Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：JP2011187902A
公开(公告)日：2011-09-22
申请号：JP2010054744
申请日：2010-03-11
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： HIROMI KAZUYUKI , NISHIO RYOJI
IPC分类号： H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To improve an etching rate, by suppressing generation of foreign matter and introducing a processing gas from a center part of a substrate to be processed. SOLUTION: A plasma processing apparatus includes a vacuum container 101, a sample mounting electrode 102 which is arranged in the vacuum container and on which a sample as a material to be processed is mounted and held, and an antenna coil. The plasma processing apparatus supplies a high-frequency electric field to the processing gas supplied into the vacuum container through the antenna coil to generates plasma and performs plasma processing for the sample using the generated plasma. The plasma processing apparatus includes an electric field transmission window and the antenna coil opposite to a sample mounting surface of the sample mounting electrode, the electric field transmission window has a plurality of radially formed flow passages, and the processing gas is supplied from outer peripheral sides of the flow passages formed on the transmission window to be fed into the vacuum container from inner peripheral sides, and is exhausted through an inner peripheral side of the vacuum container at an outer periphery of the sample mounting electrode. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：通过抑制异物的产生和从待处理的基板的中心部分引入处理气体来提高蚀刻速率。解决方案：等离子体处理装置包括真空容器101，安装在真空容器中并且其上安装并保持作为待处理材料的样品的样品安装电极102和天线线圈。等离子体处理装置通过天线线圈向提供给真空容器的处理气体提供高频电场，以产生等离子体，并使用所产生的等离子体对样品进行等离子体处理。等离子体处理装置包括电场传输窗口和与样品安装电极的样品安装表面相对的天线线圈，电场传输窗口具有多个径向形成的流动通道，并且处理气体从外周侧形成在透光窗口上的流路从内周侧供给到真空容器中，并在样品安装电极的外周通过真空容器的内周侧排出。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2011124293A Plasma processing apparatus 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：JP2011124293A
公开(公告)日：2011-06-23
申请号：JP2009279035
申请日：2009-12-09
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ZOKU YUSAKU , YOSHIOKA TAKESHI , NISHIO RYOJI
IPC分类号： H01L21/3065
CPC分类号： H01L21/67069 , H01J37/321
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of achieving more uniform processing. SOLUTION: The plasma processing apparatus is disclosed in which a wafer mounted on a sample stage arranged in a processing chamber in a vacuum vessel is processed using a plasma formed in the processing chamber. The plasma processing apparatus includes a dielectric bell jar that makes up the upper part of the vacuum vessel and surrounds the processing chamber; a coil-shaped antenna that is arranged in a state that is wound on the outer periphery of the bell jar and supplied with the high-frequency power to form the plasma; and a Faraday shield of a conductive material that is formed of double layers including inner and outer layers arranged in spaced relation to each other between the antenna and the bell jar, each layer having a plurality of slits and set at a predetermined potential. The slits of the inner and outer layers of the Faraday shield are arranged so as to be covered in staggered fashion. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供能够实现更均匀的处理的等离子体处理装置。解决方案：公开了一种等离子体处理装置，其中使用在处理室中形成的等离子体来处理安装在设置在真空容器中的处理室中的样品台上的晶片。等离子体处理装置包括构成真空容器的上部并且围绕处理室的电介质钟罩; 线圈状天线，其被布置成缠绕在钟罩的外周并被提供高频电力以形成等离子体的状态; 以及导电材料的法拉第屏蔽，其由天线和钟罩之间彼此间隔布置的包括内层和外层的双层形成，每层具有多个狭缝并设定在预定电位。法拉第屏蔽层的内层和外层的狭缝布置成以交错方式覆盖。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2010003765A Plasma processing device and method for feeding power to the plasma processing device 审中-公开
标题翻译：等离子体处理装置和用于向等离子体处理装置供电的方法
公开(公告)号：JP2010003765A
公开(公告)日：2010-01-07
申请号：JP2008159636
申请日：2008-06-18
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： NISHIO RYOJI
IPC分类号： H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To enable an electronic drive distance to be made infinite, significantly improve the ignitability of plasma, and make better the circumferential directional uniformity of plasma in an induction-type plasma processing device.
SOLUTION: The plasma processing device supplies high-frequency current from a high-frequency power source to a radio frequency induction coil 7 formed above a vacuum treatment chamber to turn the gas supplied to the vacuum treatment chamber into plasma, thus performing plasma treatment on a test piece, wherein it divides the radio frequency induction coil 7 into n (where n is an integer) radio frequency induction coil elements 7-1 to 7-4, aligns respective divided radio frequency induction coil elements into a column on one circumference, prepares delay means 6-2 to 6-4 between the radio frequency induction coil elements 7-2 to 7-4 aligned into the column and the high-frequency power source, and supplies a high-frequency current to each of the radio frequency induction coil elements 7-2 to 7-4, the high frequency current being sequentially delayed by λ (wavelength of the high-frequency power source)/n beginning with the radio frequency induction coil element 7-1.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了使电子驱动距离无限大，显着提高等离子体的点火性，并且使感应型等离子体处理装置中的等离子体的周向均匀性更好。解决方案：等离子体处理装置将高频电源的高频电流提供给形成在真空处理室上方的射频感应线圈7，将供给真空处理室的气体转换为等离子体，从而进行等离子体在其中将射频感应线圈7分成n（其中n是整数）的射频感应线圈元件7-1至7-4，将相应的分开的射频感应线圈元件对准为一列准备在与列对准的射频感应线圈元件7-2〜7-4与高频电源之间的延迟装置6-2至6-4，并向每个无线电装置提供高频电流频率感应线圈元件7-2〜7-4，高频电流从射频感应线圈元件7-1开始依次延迟λ（高频电源的波长）/ n。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2008251764A Plasma treatment equipment 有权
标题翻译：等离子体处理设备
公开(公告)号：JP2008251764A
公开(公告)日：2008-10-16
申请号：JP2007090137
申请日：2007-03-30
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ARAMAKI TORU , NISHIO RYOJI
IPC分类号： H01L21/3065 , C23C16/44 , H01L21/205 , H01L21/31
CPC分类号： H01L21/31116 , H01J37/32192 , H01J37/32568 , H01J37/32642 , H01L21/0273 , H01L21/32137 , H01L21/32139
摘要： PROBLEM TO BE SOLVED: To provide plasma treatment equipment for improving an yield of treatment by uniformly removing an adhering matter on the front surface of a test piece. SOLUTION: There is provided plasma treatment equipment for allowing a plurality of film structures arranged on the upper surface of a wafer placed on a test piece stand arranged in a treatment chamber subjected to etching treatment using plasma generated in the treatment chamber while supplying high-frequency power to an electrode in the test piece stand. The plasma treatment equipment comprises an outer periphery ring comprising a ring electrode arranged over the electrode on the outer periphery side of a surface on which the test piece is placed of the test piece stand and a dielectric body arranged over the ring electrode and facing the plasma, and a power section for supplying power having different values according to kinds of the film of the film structure to the ring electrode. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供等离子体处理设备，以通过均匀地去除试件前表面上的粘附物质来提高处理产率。解决方案：提供等离子体处理设备，用于允许布置在布置在处理室中的晶片的上表面上的多个膜结构，该处理室使用处理室中产生的等离子体进行蚀刻处理，同时供应高频电源到试片架上的电极。等离子体处理设备包括外周环，其包括环形电极，该环状电极布置在电极上，该电极位于其上放置测试片支架的表面的外周侧，以及布置在环形电极上并且面向等离子体的电介质体以及功率部，用于根据膜结构的膜的种类向环形电极供给具有不同值的电力。版权所有（C）2009，JPO＆INPIT

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