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1. 发明专利

JP2013041953A Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：JP2013041953A
公开(公告)日：2013-02-28
申请号：JP2011177387
申请日：2011-08-15
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： MAEDA KENJI , ITO ATSUSHI , IZAWA MASARU
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H01J37/32146 , H01J37/32935
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus that adjusts ion energy on a wafer to a value within an intended range to allow highly accurate machining or long-term stable processing.SOLUTION: A plasma processing apparatus comprises: a processing chamber that is arranged in a vacuum vessel in which plasma is formed; a stage that is arranged in the processing chamber and of which a wafer that is a processing target is placed on a placement surface on an upper part; and a power source that supplies a high-frequency power for forming bias potential on an electrode that is arranged inside the stage. The plasma processing apparatus processes the wafer by using the plasma while supplying the high-frequency power from the power source. The plasma processing apparatus further comprises: a detector that is arranged on an outer peripheral side of the placement surface of the stage and detects a difference component Vpp between a maximal value and a minimal value, and a direct current component Vdc from a voltage value of the bias that is formed above the outer peripheral side of the placement surface; and a controller that adjusts an output of a high-frequency bias power such that a value represented as Vpp/2+|Vdc| in the processing becomes constant on the basis of an output from the detector.
摘要翻译：要解决的问题：提供一种等离子体处理装置，其将晶片上的离子能量调整到预期范围内的值，以允许高精度的加工或长期稳定的处理。解决方案：等离子体处理装置包括：处理室，其布置在其中形成等离子体的真空容器中; 布置在处理室中并且其中作为处理目标的晶片的阶段被放置在上部的放置表面上; 以及电源，其在布置在所述台内的电极上提供用于形成偏置电位的高频电力。等离子体处理装置通过使用等离子体处理晶片，同时从电源提供高频电力。等离子体处理装置还包括：检测器，其设置在载物台的放置面的外周侧，并检测最大值和最小值之间的差分量Vpp，以及从电压值所述偏置形成在所述放置面的外周侧的上方; 以及控制器，其调节高频偏置功率的输出，使得处理中表示为Vpp / 2 +¾Vdc¾的值基于来自检测器的输出而变为恒定。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2010186841A Method of processing plasma 有权
标题翻译：处理等离子体的方法
公开(公告)号：JP2010186841A
公开(公告)日：2010-08-26
申请号：JP2009029252
申请日：2009-02-12
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ICHINO TAKAMASA , MAEDA KENJI , YOKOGAWA KATANOBU
IPC分类号： H01L21/3065
CPC分类号： H01J37/32642 , H01J37/32091 , H01J37/32183
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing method which does not alter the overall etching characteristics of a substrate to be processed even if the bias power being applied to a wafer is partially divided and applied to a focus ring by controlling the bias power being applied to a wafer not to be affected but is kept constant.
SOLUTION: According to consumption of a focus ring which is consumed by plasma processing, the high frequency bias power being applied to the focus ring is changed by controlling an impedance adjustment circuit, and the high frequency bias power being applied to a sample stand is controlled to a predetermined high frequency bias power by controlling the output of a high frequency bias power supply.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供等离子体处理方法，即使施加到晶片的偏置功率被部分地分割并施加到聚焦环，也不会改变待处理的基板的整体蚀刻特性，通过控制偏置功率施加到不受影响的晶片，但保持恒定。解决方案：根据等离子体处理消耗的聚焦环的消耗，通过控制阻抗调节电路来改变施加到聚焦环的高频偏置功率，并且将高频偏置功率施加到样品通过控制高频偏置电源的输出将支架控制到预定的高频偏置功率。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2008283054A Wafer edge cleaner 有权
标题翻译： WAFER EDGE CLEANER
公开(公告)号：JP2008283054A
公开(公告)日：2008-11-20
申请号：JP2007126984
申请日：2007-05-11
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： KOBAYASHI HIROYUKI , MAEDA KENJI , IZAWA MASARU , YOKOGAWA KATANOBU
IPC分类号： H01L21/302
CPC分类号： H01L21/02087 , B08B7/0042 , H01L21/67028
摘要： PROBLEM TO BE SOLVED: To provide a wafer edge cleaner capable of removing unwanted matters adhered to the outer periphery of a body to be treated at low cost, as well as, at a high throughput.
SOLUTION: Deposit stuck to the outer peripheral part of the back surface of the body to be treated is irradiated with a laser beam whose peak power density is 30 kW/mm
2 .
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够以低成本以高产量除去附着在被处理体外周的不需要的物质的晶片边缘清洁剂。解决方案：使用峰值功率密度为30kW / mm 2的激光束照射粘附在待处理体的背面的外周部的沉积物。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2007250870A Plasma processor 有权
标题翻译：等离子体处理器
公开(公告)号：JP2007250870A
公开(公告)日：2007-09-27
申请号：JP2006072763
申请日：2006-03-16
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： KAWAKAMI MASATOSHI , MAEDA KENJI
IPC分类号： H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To blow away extraneous matters adhered to parts disposed above a processing chamber for discharging, thereby decreasing extraneous matters in the processing chamber. SOLUTION: This plasma processor comprises a vacuum processing chamber 1, gas introduction means 8, 9 provided above the vacuum processing chamber 1 for introducing a process gas into the vacuum processing chamber 1, stages 2, 3 disposed in the vacuum processing chamber 1 for placing and holding a sample as a processing object, and a plasma generating means 7 provided above the vacuum processing chamber 1 for supplying high frequency electric power into the vacuum processing chamber 1 to generate a plasma. In the plasma processor for performing a plasma processing with respect to the sample with the generated plasma, the stage comprises a heat conduction gas exhaust nozzle 36 for exhausting a heat conduction gas to a heat conduction space formed between the stage and the placed sample, and an extraneous matter removing gas exhaust nozzle 21 for blowing an extraneous matter removing gas to the gas introduction means and the plasma generating means which are provided above the stage to remove the adhered extraneous matters. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了吹除附着在设置在处理室上方的部件排出的部件，从而减少处理室中的外来物质。解决方案：该等离子体处理器包括真空处理室1，设置在真空处理室1上方的气体引入装置8,9，用于将处理气体引入真空处理室1中，设置在真空处理室中的阶段2,3 1，用于放置和保持样品作为处理对象;以及等离子体产生装置7，设置在真空处理室1的上方，用于将高频电力提供给真空处理室1以产生等离子体。在等离子体处理器中，相对于所产生的等离子体的样品进行等离子体处理，该台包括导热气体排出喷嘴36，用于将热传导气体排放到形成在载物台和放置样品之间的热传导空间，以及去除气体排出喷嘴21的外部物质，用于将除外气体吹送到气体引入装置和等离子体产生装置，其设置在载物台上方以去除附着的外来物质。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2004200429A Plasma treatment apparatus 有权
公开(公告)号：JP2004200429A
公开(公告)日：2004-07-15
申请号：JP2002367527
申请日：2002-12-19
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： KOBAYASHI HIROYUKI , MAEDA KENJI , ARAI MASATSUGU , KAZUMI HIDEYUKI , YOSHIDA TAKESHI
IPC分类号： C23C16/44 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus which is improved in the uniformity of plasma treatment.
SOLUTION: The plasma treatment apparatus uses a method wherein electromagnetic waves are radiated and discharged in magnetic fields, and it comprises a plasma treatment chamber 1, means for supplying treatment gas to the plasma treatment chamber, evacuation means for decompressing the plasma treatment chamber, electrode 3 to place a workpiece 6 such as a wafer, electromagnetic wave radiation power supplies 4A and 4B, electromagnetic radiation antenna 2, a plurality of magnetic coils 9A and 9B which form nearly vertical magnetic fields in the treatment chamber, and yokes 10A and 10B. The yokes 10A and 10B are installed separately in the respective magnetic coils 9A and 9B. Furthermore, a non-magnetic material 11 is placed between the yokes to independently control a local distribution of magnetic fields.
COPYRIGHT: (C)2004,JPO&NCIPI

6. 发明专利

JP2013182966A Plasma processing apparatus and plasma processing method 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：JP2013182966A
公开(公告)日：2013-09-12
申请号：JP2012044939
申请日：2012-03-01
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： MAEDA KENJI , YOSHIOKA TAKESHI , KAWASAKI HIROMICHI , SHIMOMURA TAKAHIRO
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H01J37/3211 , C23C16/45557 , C23C16/505 , C23C16/507 , C23C16/52 , H01J37/321 , H01J37/32155 , H01J37/32174 , H01J37/32183 , H01J37/32816 , H01L21/02 , H01L21/02041 , H01L21/02104 , H01L21/30 , H01L21/67017 , H01L21/67028 , H01L21/67034 , H01L21/67069
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and processing method that use a spiral resonator with which a reflection wave is suppressed.SOLUTION: A plasma processing apparatus includes: a processing chamber that is arranged in a vacuum vessel, which can be decompressed, and in whose inside space plasma for processing a specimen that is a processing target arranged in the inside space is formed; means for supplying gas for plasma generation into the processing chamber; vacuum evacuation means for exhausting the inside of the processing chamber; a spiral resonance device composed of a spiral resonance coil installed outside the vacuum vessel and a shield arranged outside the resonance coil and electrically grounded; and a high frequency power source whose frequency is variable and which supplies high frequency power in a prescribed range to the resonance coil, wherein an electrical length of the resonance coil is set at an integral multiple of one wavelength at a prescribed frequency, a frequency matching device is included which is capable of adjusting the frequency of the high frequency power source so that reflection power of high frequency becomes the minimum, and a feeding point of the spiral resonance coil is connected to a ground potential using a variable capacitance element.
摘要翻译：要解决的问题：提供一种使用抑制反射波的螺旋谐振器的等离子体处理装置和处理方法。解决方案：等离子体处理装置包括：处理室，其布置在真空容器中，其可以被减压并且在其内部空间中形成用于处理布置在内部空间中的作为处理对象的样本的等离子体; 用于将等离子体产生气体供应到处理室中的装置; 用于排出处理室内部的真空排气装置; 由安装在真空容器外侧的螺旋谐振线圈构成的螺旋谐振装置和配置在谐振线圈外侧的屏蔽电接地; 以及高频电源，其频率可变并且向规定的频率提供规定范围内的高频功率，其中所述谐振线圈的电长度被设定为规定频率的一个波长的整数倍，频率匹配能够调整高频电源的频率，使得高频反射功率成为最小的装置，并且使用可变电容元件将螺旋谐振线圈的馈电点连接到地电位。

7. 发明专利

JP2012134235A Plasma processing device 审中-公开
标题翻译：等离子体加工装置
公开(公告)号：JP2012134235A
公开(公告)日：2012-07-12
申请号：JP2010283296
申请日：2010-12-20
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： TAKAHASHI YOJI , MAEDA KENJI , KAWAGUCHI TADAYOSHI , ABE TAKAHIRO , YAMAMOTO NAOHIRO
IPC分类号： H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To achieve a high level of controllability and the uniformity of processing on a large-size wafer while using plasma of a middle-density plasma region.SOLUTION: The plasma processing device comprises: a vacuum process chamber; vacuum evacuation means for evacuating the vacuum process chamber; gas supply means for supplying gas to the vacuum process chamber; micro wave power supply means for generating plasma; a substrate stage for putting a wafer on; a high frequency bias power source for applying a high frequency bias power to the wafer through the substrate stage; a solenoid inductor for generating a magnetic field inside the vacuum process chamber; a yoke; and a micro wave transmission window made of dielectric which is formed so that a center or peripheral portion thereof protrudes from other portions by substantially a quarter of the wavelength of micro waves in the dielectric. The micro wave transmission window made of the dielectric includes: a flat plate portion; a protruding portion placed on the flat plate portion; and positioning concave and convex portions for positioning the protruding portion on the flat plate portion.
摘要翻译：要解决的问题：为了在使用中等密度等离子体区域的等离子体的同时在大尺寸晶片上实现高水平的可控制性和均匀性。解决方案：等离子体处理装置包括：真空处理室; 用于抽空真空处理室的真空排气装置; 用于向真空处理室供给气体的气体供给装置; 用于产生等离子体的微波电源装置; 用于放置晶片的衬底台; 高频偏置电源，用于通过衬底台向晶片施加高频偏置功率; 用于在真空处理室内产生磁场的螺线管电感器; 一个轭以及由电介质制成的微波透射窗，其中心部分或周边部分的其它部分以电介质中的微波波长的四分之一突出。由电介质制成的微波透射窗包括：平板部分; 设置在所述平板部上的突出部; 以及定位用于将所述突出部分定位在所述平板部分上的凹凸部。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2011129749A Plasma processing apparatus and foreign particle detecting method thereof 审中-公开
标题翻译：等离子体处理装置和外来颗粒检测方法
公开(公告)号：JP2011129749A
公开(公告)日：2011-06-30
申请号：JP2009287511
申请日：2009-12-18
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： KOBAYASHI HIROYUKI , MAEDA KENJI
IPC分类号： H01L21/3065
CPC分类号： H01J37/32981 , G06K9/00127 , H01J37/32192 , H01J37/32935
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus equipped with a particle counter for detecting foreign particles having 100 nm or less particle diameter with high efficiency.
SOLUTION: A plasma processing apparatus is provided with: a processing chamber; a high frequency power source for generating plasma; a gas supply means for supplying gas; a means for discharging gas for decompressing the inside of the processing chamber via a gas discharge line; a valve for regulating pressure for adjusting a pressure in the processing chamber; and a stage on which an object to be processed is laid. The plasma processing apparatus is further equipped with: a laser light source for transmitting laser light through a discharge gas flowing in the gas discharge line; an I-CCD camera for detecting scattered light produced by foreign particles passing through the laser light, and a unit for determining and detecting a foreign material for detecting the foreign material from an image measured by the I-CCD camera. The unit for determining and detecting the foreign material determines that the foreign particle is detected when a plurality of pixels obtaining a signal of a predetermined strength or more from the measured image are connected with a nearly straight line.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种配备有用于高效率地检测具有100nm以下粒径的异物的粒子计数器的等离子体处理装置。解决方案：等离子体处理装置具有：处理室; 用于产生等离子体的高频电源; 用于供给气体的气体供给装置; 用于经由气体排出管线排出用于对处理室内部进行减压的气体的装置; 用于调节用于调节处理室中的压力的压力的阀; 以及放置待处理对象的阶段。等离子体处理装置还具备：激光光源，其通过在气体放电管线中流动的放电气体传输激光; 用于检测由穿过激光的异物产生的散射光的I-CCD照相机，以及用于通过由I-CCD照相机测量的图像确定和检测用于检测异物的异物的单元。用于确定和检测异物的单元确定当从测量图像获得预定强度或更大的信号的多个像素以几乎直线连接时检测到异物。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2011009351A Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：JP2011009351A
公开(公告)日：2011-01-13
申请号：JP2009149772
申请日：2009-06-24
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： MAEDA KENJI , YOKOGAWA KATANOBU , TAMURA SATOYUKI , HIROMI KAZUYUKI , ICHINO TAKAMASA
IPC分类号： H01L21/3065
CPC分类号： H01L21/6831 , H01J37/20 , H01J37/32623 , H01J37/32642 , H01J2237/2001 , H01L21/68735
摘要： PROBLEM TO BE SOLVED: To maintain an etching characteristic at a wafer edge portion favorably for a long time, to favorably maintain an yield at the edge portion for a long time, to prolong a wet period, and to improve a device operation rate.SOLUTION: An electrostatic adsorption layer 54, an electrode layer 52, and an insulating layer 62 are provided in a lower portion of a focus ring 51 disposed in an outer periphery of a substrate stage 55. A high-frequency bias is applied to the focus ring 51 by applying a high-frequency electric power to the electrode layer 52. Further, the focus ring 51 is electrostatically adsorbed to the electrostatic chucking layer 54 and a heat transfer gas is provided between the focus ring and the electrostatic adsorption layer. Thus, the focus ring 51 is cooled and the temperature of the focus ring 51 is controlled to a predetermined value.
摘要翻译：要解决的问题：为了长时间有利地保持晶片边缘部分的蚀刻特性，有利于长时间保持边缘部分的屈服，延长湿润周期，并提高装置的操作速度。静电吸附层54，电极层52和绝缘层62设置在设置在衬底台55的外周的聚焦环51的下部。高频偏压被施加到聚焦环此外，聚焦环51被静电吸附到静电吸附层54上，并且在聚焦环和静电吸附层之间设置有传热气体。因此，聚焦环51被冷却，并且将聚焦环51的温度控制在预定值。

10. 发明专利

JP2010174779A Vacuum process device 审中-公开
标题翻译：真空过程装置
公开(公告)号：JP2010174779A
公开(公告)日：2010-08-12
申请号：JP2009019295
申请日：2009-01-30
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： KOBAYASHI HIROYUKI , MAEDA KENJI , IZAWA MASARU , NAWATA MAKOTO
IPC分类号： F04D19/04 , C23C16/44 , H01L21/205 , H01L21/3065 , H01L21/31
CPC分类号： C23C16/4412
摘要： PROBLEM TO BE SOLVED: To provide a vacuum process device reducing the number of contaminant particles adhering of an object to be processed.
SOLUTION: A contaminant particle scattering prevention unit constructed by installing a member provided with a passage through which gas passes to a center part and a plurality of fixing blades inclined in a reverse direction to a rotary blade of a turbo molecular pump at an outer circumference of the member is disposed in a space between a pressure control pump of an exhaust system and the turbo molecular pump.
COPYRIGHT: (C)2010,JPO&INPIT

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