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1. 发明专利

JP2005056936A Vacuum processing apparatus, and cleaning method thereof 有权
标题翻译：真空处理装置及其清洁方法
公开(公告)号：JP2005056936A
公开(公告)日：2005-03-03
申请号：JP2003206498
申请日：2003-08-07
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： TETSUKA TSUTOMU , IKENAGA KAZUYUKI , KIKKAI MOTOHIKO
IPC分类号： B08B3/10 , C23C16/44 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a vacuum processing apparatus which has a means to clean the inside of a vacuum container efficiently and uniformly.
SOLUTION: An RF electrode 15 for cleaning, which is covered with dielectrics 16, is arranged in the vacuum container 1, and high frequency is applied thereto. Control is so performed with a power controller 62 that magnetic lines of force mf which pass the RF electrode 15 for cleaning intersect a cleaning region by magnetic field generation coils 22-1, 22-2 for cleaning which are magnetic field generating means. As a result, secondary electrons e emitted from the RF electrode 15 for cleaning move along the magnetic lines of force mf, and cleaning irradiation is performed to a specific part.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种真空处理装置，其具有有效且均匀地清洁真空容器内部的装置。解决方案：在真空容器1中布置有用电介质16覆盖的用于清洁的RF电极15，并向其施加高频。用功率控制器62进行控制，通过用于清洁的RF电极15的磁力线mf通过作为磁场产生装置的清洁用磁场产生线圈22-1,22-2与清洁区域相交。结果，从用于清洁的RF电极15发射的二次电子e沿着磁力线mf移动，并且对特定部分进行清洁照射。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2006119145A Method and device for processing semiconductor wafer 审中-公开
标题翻译：用于处理半导体波形的方法和装置
公开(公告)号：JP2006119145A
公开(公告)日：2006-05-11
申请号：JP2005328237
申请日：2005-11-14
申请人： Hitachi High-Technologies Corp , Hitachi Kasado Eng Co Ltd , Hitachi Ltd , 日立笠戸エンジニアリング株式会社 , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： USUI TAKETO , FUJII TAKASHI , KIKKAI MOTOHIKO , KAJI TETSUNORI
IPC分类号： G01B11/06 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method for processing a material to be processed capable of precisely measuring an actual thickness of the material in a plasma process, especially a plasma etching process, and a device therefor.
SOLUTION: The method for processing a semiconductor wafer processes the surface film of the semiconductor wafer arranged in a vacuum processing chamber by using plasma formed in the vacuum processing chamber. It comprises a step of receiving a plurality of wavelengths of interference beams obtained from the surface of the semiconductor wafer during the processing so as to detect derivative values of strength of the interference beams for a plurality of the respective wavelengths; a step of determining a range of the film thickness for an interference beam with a first wavelength from among the detected interference beams of a plurality of the wavelengths by using a pattern in which the derivative value of the strength thereof passes through a zero point; and a step of judging the film thickness from the range of the film thickness for an interference beam with a second wavelength from among the interference beams of a plurality of the wavelengths by using a pattern in which the derivative value of the strength thereof passes through a zero point.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于处理能够在等离子体工艺，特别是等离子体蚀刻工艺中精确测量材料的实际厚度的材料的处理方法及其装置。解决方案：用于处理半导体晶片的方法通过使用在真空处理室中形成的等离子体处理布置在真空处理室中的半导体晶片的表面膜。它包括在处理期间接收从半导体晶片的表面获得的多个波长的干涉光束的步骤，以便检测多个相应波长的干涉光束的强度的导数值; 通过使用其强度的导数值通过零点的图案，从多个波长的检测干涉光束中确定具有第一波长的干涉光束的膜厚的范围的步骤; 以及通过使用其强度的导数值通过一个波长的图案，从多个波长的干涉光束之中的第二波长的干涉光束的膜厚度的范围来判断膜厚度的步骤零点版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2005123641A Etching apparatus and etching method 有权
标题翻译：蚀刻装置和蚀刻方法
公开(公告)号：JP2005123641A
公开(公告)日：2005-05-12
申请号：JP2004351409
申请日：2004-12-03
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： KAGOSHIMA AKIRA , KIKKAI MOTOHIKO , YAMAMOTO HIDEYUKI , SHIRAISHI DAISUKE , TANAKA JUNICHI , TAMAOKI KENJI , MORIOKA NATSUYO
IPC分类号： H01L21/28 , H01L21/3065 , H01L21/3213
摘要： PROBLEM TO BE SOLVED: To provide a method of etching by which unforeseen side effect risk occurring in case that feedback control is performed is reduced, and a control model can be constructed without spending enormous labor and time.
SOLUTION: The etching apparatus carries out the etching of a single film 113 to be etched consisting of a plurality of etching steps to which different recipes are applied respectively. The etching equipment so carries out the etching that a prescribed recipe which is applied to the last etching step (step 5) having influence on an under layer film contacting the etching film to be etched is fixed, a recipe forming means which forms a recipe applied to a residual etching step (step 4) basing on processing result obtained from an inspection device measuring processed profile after the etching is provided, and the etching is performed on the basis of the recipe formed by the recipe forming means.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种在进行反馈控制的情况下发生的不可预见的副作用风险的蚀刻方法，并且可以构建控制模型而不花费巨大的劳动和时间。解决方案：蚀刻装置对分别应用不同配方的多个蚀刻步骤进行蚀刻，由单一的待蚀刻膜113进行蚀刻。因此，蚀刻装置进行蚀刻，使与施加在蚀刻用蚀刻膜上的下层膜有影响的最后蚀刻工序（步骤5）的规定的配方固定，形成配方的配方形成机构基于在蚀刻后测量加工轮廓的检查装置获得的处理结果，并且基于由配方形成装置形成的配方进行蚀刻，进行残留蚀刻步骤（步骤4）。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2005056925A Plasma processing apparatus and treatment room internal surface stabilization method 审中-公开
标题翻译：等离子体处理装置和处理室内部表面稳定方法
公开(公告)号：JP2005056925A
公开(公告)日：2005-03-03
申请号：JP2003206247
申请日：2003-08-06
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： KITSUNAI HIROYUKI , ONO TETSUO , ITABASHI NAOSHI , KIKKAI MOTOHIKO
IPC分类号： C23C16/44 , H01L21/205 , H01L21/304 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a treatment room internal surface stabilization method which removes a deposition film in a treatment room and suppress corrosion of a wall surface in a plasma etch processing apparatus.
SOLUTION: In the treatment room internal surface stabilization method of the plasma processing apparatus which generates plasma by introducing raw gas in a treatment room in which a processed object is installed, and the processed object is processed after a cleaning treatment (step S2) following an etching treatment (step S1). A treatment room internal surface stabilization treatment (step S3) is performed wherein O
2 gas or F gas as an internal surface protective gas for protecting the treatment room internal surface is introduced and plasma treatment is performed. Consequently, the treatment room surface of a wall is stabilized, and material constituting the treatment room wall surface is prevented from being discharged in the treatment room at the time of etching treatment.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种治疗室内表面稳定化方法，该方法除去处理室中的沉积膜并抑制等离子体蚀刻处理设备中的壁表面的腐蚀。解决方案：在通过在安装有加工对象的处理室中引入原始气体并且在清洁处理之后处理被处理物体来产生等离子体的等离子体处理装置的处理室内表面稳定化方法（步骤S2 ）（步骤S1）。进行处理室内表面稳定化处理（步骤S3），其中引入作为用于保护处理室内表面的内表面保护气体的O 2 SB气体或F气体，并进行等离子体处理。因此，壁的处理室表面稳定，并且防止在蚀刻处理时在处理室中排出构成处理室壁面的材料。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2004022747A Etching device and treatment method 有权
公开(公告)号：JP2004022747A
公开(公告)日：2004-01-22
申请号：JP2002174616
申请日：2002-06-14
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： KAGOSHIMA AKIRA , KIKKAI MOTOHIKO , YAMAMOTO HIDEYUKI , SHIRAISHI DAISUKE , TANAKA JUNICHI , TAMAOKI KENJI , MORIOKA NATSUYO
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/3213 , H01L21/66
CPC分类号： H01L21/67253 , G05B2219/45212 , H01J37/32935 , H01L21/32137 , H01L22/20
摘要： PROBLEM TO BE SOLVED: To provide an etching method by which a unexpected side effects can be reduced when feedback controlling and a control model be constructed without requiring much manpower or time.
SOLUTION: The etching device is used to etch a single film 113 through a plurality of etching steps with different recipes. A preset recipe is applied to a final etching step (step 5), where to a lower layer film contact is affected by the film 113, and a recipe-generating means is provided to generate a recipe to be applied to the other etching steps (step 4) on the basis of a treatment result. The etching treatment is applied, based on the recipe generated by the recipe generation means.
COPYRIGHT: (C)2004,JPO

6. 发明专利

JP2003083720A Method and apparatus for measuring treatment amount of film in semiconductor-element manufacturing process, method and apparatus for treatment of material to be treated by using them as well as method and apparatus for deciding end point by using them 有权
标题翻译：用于测量半导体元件制造工艺中的膜的处理量的方法和装置，用于如何使用它们来处理待处理的材料的方法和装置以及使用它们来决定终点的装置
公开(公告)号：JP2003083720A
公开(公告)日：2003-03-19
申请号：JP2001280908
申请日：2001-09-17
申请人： Hitachi High-Technologies Corp , Hitachi Kasado Eng Co Ltd , Hitachi Ltd , 日立笠戸エンジニアリング株式会社 , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： USUI TAKETO , FUJII TAKASHI , KIKKAI MOTOHIKO , KAJI TETSUNORI , YAMAMOTO HIDEYUKI
IPC分类号： G01B11/06 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To measure the actual etching depth and the residual film amount of a layer to be treated precisely in an on-line manner and to decide the end point of a process.
SOLUTION: A standard pattern using a wavelength as a parameter for the differential value of interference light with reference to the prescribed step of a first material to be treated and a standard pattern using a wavelength as a parameter for the differential value of interference light with reference to the prescribed mask residual film thickness of the material to be treated are set. Then, the intensity of interference light regarding a second material to be treated whose constitution is identical to that of the first material to be treated is measured regarding a plurality of wavelengths, and an actual pattern using a wavelength as a parameter fro the differential value of the measured intensity of the interference light is found. On the basis of the standard pattern and on the basis of the actual pattern for the differential value, the step and the mask residual film thickness of the second material to be treated are found. The end point of the process is decided on the basis of the found step and the found mask residual film thickness of the second material to be treated.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：以在线方式精确地测量被处理层的实际蚀刻深度和残留膜量，并决定工艺的终点。解决方案：参考第一待处理材料的规定步骤，使用波长作为干涉光的差分值的参数的标准图案，以及使用波长作为参考的干涉光的差分值的参数的标准图案设定待处理材料的规定掩模残留膜厚度。然后，测定与多个波长相同的构成与第一待处理材料相同的被处理材料的干涉光的强度，使用波长作为参考的实际图案，发现干涉光的测量强度。基于标准图案，并且基于差分值的实际图案，找到待处理的第二材料的台阶和掩模残留膜厚度。基于所处理的第二材料的发现步骤和所找到的掩模残留膜厚来确定工艺的终点。

7. 发明专利

JP2003037100A Method for plasma etching 有权
标题翻译：等离子体蚀刻方法
公开(公告)号：JP2003037100A
公开(公告)日：2003-02-07
申请号：JP2001223075
申请日：2001-07-24
申请人： Hitachi High-Technologies Corp , Hitachi Kasado Eng Co Ltd , Hitachi Ltd , 日立笠戸エンジニアリング株式会社 , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： SAITO TAKESHI , SAKAGUCHI MASAMICHI , FURUBAYASHI HITOSHI , KIKKAI MOTOHIKO , TANI SATOSHI
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32431 , H01J2237/3347 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method for plasma-etching a semiconductor substrate capable of sufficiently obtaining an etching rate in trench working and an improvement in yield.
SOLUTION: The method for plasma-etching the semiconductor substrate comprises the steps of cooling a sample base 6 in a vacuum container 1 by a temperature controller 11, setting a temperature of a sample 7 made of a silicon substrate to a low temperature of 0°C or lower, then plasma-etching the sample 7 by using etching gas containing an SF
6 as a main component and adding O
2 thereto, and trench-working the sample 7.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种能够充分获得沟槽加工中的蚀刻速率并提高产量的半导体衬底的等离子体蚀刻方法。解决方案：等离子体蚀刻半导体衬底的方法包括以下步骤：通过温度控制器11将真空容器1中的样品基底6冷却，将由硅衬底制成的样品7的温度设定为0度的低温 ℃以下，然后通过使用含有SF6作为主要成分的蚀刻气体并向其中加入O 2，对样品7进行等离子体蚀刻，并对样品7进行沟槽加工。

8. 发明专利

JP2005183833A Plasma processing equipment and processing method 有权
标题翻译：等离子体加工设备和加工方法
公开(公告)号：JP2005183833A
公开(公告)日：2005-07-07
申请号：JP2003425594
申请日：2003-12-22
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： TETSUKA TSUTOMU , IKENAGA KAZUYUKI , ONO TETSUO , KIKKAI MOTOHIKO , ITABASHI NAOSHI
IPC分类号： H01L21/3065 , C23F4/00 , H01J37/32
CPC分类号： H01J37/32477 , C23F4/00
摘要： PROBLEM TO BE SOLVED: To provide the plasma processing equipment and processing method that reduces impurities via reactor vessels, maintaining plasma stability.
SOLUTION: In the plasma processing equipment, 90% of the side wall of the inner wall 101 in the reaction chamber 1 is covered with a dielectric substance 102, and a grounded conductive material 21a with an area size smaller than or equal to 10% of the side wall of the inner wall 101 is provided in a way that direct current flows via the plasma. A DC earth made up of a conductive material 21 is grounded at a location where the floating potential of plasma (or plasma density) is higher than that (or plasma density) of plasma 9 near a wafer holding electrode 14 with a relatively large degree of wall reduction.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供通过反应器容器减少杂质的等离子体处理设备和处理方法，保持等离子体稳定性。解决方案：在等离子体处理设备中，反应室1中的内壁101的侧壁的90％被电介质物质102覆盖，并且区域尺寸小于或等于内壁101的侧壁的10％以直流电流流过等离子体的方式设置。由导电材料21构成的直流接地在等离子体的浮动电位（或等离子体密度）高于晶片保持电极14附近的等离子体9的（或等离子体密度）的位置处接地，具有较大程度的墙壁减少。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2004031970A Manufacturing method of semiconductor device 有权
公开(公告)号：JP2004031970A
公开(公告)日：2004-01-29
申请号：JP2003187828
申请日：2003-06-30
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： KITSUNAI HIROYUKI , TANAKA JUNICHI , FUJII TAKASHI , KIKKAI MOTOHIKO
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To realize high-efficiency etching treatment with good reproducibility by removing etching side-product, which was produced in the previous wafer treatment process, in the process of etching treatment.
SOLUTION: This manufacturing method of a semiconductor device treats a semiconductor substrate by using plasma treatment equipment that is provided with an etching treatment room 5, a substrate stage 10 on which the semiconductor substrate is to be placed, a plasma generation means to generate plasma 4 in the etching treatment room, and a treatment gas introduction means 8 to introduce a treatment gas into the etching treatment room. The method comprises an etching process in which a first treatment gas is introduced into the etching treatment room so as to etch the semiconductor substrate, and a decomposition/removal process in which a second treatment gas is introduced into the etching treatment room so as to decompose and remove the etching side-product produced in the etching process.
COPYRIGHT: (C)2004,JPO

10. 发明专利

JP2003022999A Method and device for plasma treatment 有权
标题翻译：用于等离子体处理的方法和装置
公开(公告)号：JP2003022999A
公开(公告)日：2003-01-24
申请号：JP2001210136
申请日：2001-07-11
申请人： Hitachi High-Technologies Corp , Hitachi Kasado Eng Co Ltd , Hitachi Ltd , 日立笠戸エンジニアリング株式会社 , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： ARASE TAKAO , KIKKAI MOTOHIKO , SAITO TAKESHI , SAKAGUCHI MASAMICHI , ISHIMURA HIROAKI , SHIMOMURA TAKAHIRO
IPC分类号： H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment method which improves working of high anisotropic dimension accuracy or selection with a base silicon oxide coating in working of a sample having a silicon nitride coating. SOLUTION: In a plasma etching working chamber, the mixed atmosphere of chlorinated gases containing no fluorine element and aluminum is made into plasma. By using that plasma, etching treatment is applied to the sample having the silicon nitride coating.
摘要翻译：要解决的问题：提供一种等离子体处理方法，其在具有氮化硅涂层的样品的工作中改善高各向异性尺寸精度的工作或用基底氧化硅涂层进行选择。解决方案：在等离子体蚀刻工作室中，不含氟元素和铝的氯化气体的混合气氛被制成等离子体。通过使用该等离子体，对具有氮化硅涂层的样品进行蚀刻处理。

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