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1. 发明专利

JP2007101551A Scanning electron microscope 审中-公开
标题翻译：扫描电子显微镜
公开(公告)号：JP2007101551A
公开(公告)日：2007-04-19
申请号：JP2006287787
申请日：2006-10-23
申请人： Hitachi High-Tech Science Systems Corp , Hitachi Ltd , 株式会社日立ハイテクサイエンスシステムズ , 株式会社日立製作所
发明人： NAKADA YOSHINORI , KOSHIHARA SHUNSUKE , TAMOCHI RYUICHIRO , HOSOYA YAYOI , MOROKUMA HIDETOSHI
IPC分类号： G01B15/00 , H01J37/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a scanning electron microscope which can achieve the entire process from fine adjustment to review through complete automation. SOLUTION: This scanning electron microscope is provided with the function of computing corrected precision after coordinates compensation to be displayed by using a vector 39, the function of automatically determining scale factor during search in automatic detection of foreign materials/defects after coordinates compensation from acquired information, and the function of computing appearance ratio of foreign materials/defects and time required from search scale factor and measuring conditions. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种扫描电子显微镜，可以通过完全自动化实现从微调到审查的整个过程。
解决方案：该扫描电子显微镜具有通过使用矢量39显示坐标补偿后计算校正精度的功能，在坐标补偿后自动确定比例因子的自动检测异物/缺陷的功能从获取的信息，以及计算外来材料的外观比例/缺陷和从搜索比例因子和测量条件所需的时间的功能。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2008205017A Exposure state display method and system 有权
标题翻译：暴露状态显示方法和系统
公开(公告)号：JP2008205017A
公开(公告)日：2008-09-04
申请号：JP2007036521
申请日：2007-02-16
申请人： Hitachi High-Tech Science Systems Corp , Hitachi High-Technologies Corp , 株式会社日立ハイテクサイエンスシステムズ , 株式会社日立ハイテクノロジーズ
发明人： KOIKE HIROTO , MOROKUMA HIDETOSHI , SHISHIDO CHIE
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/70641 , G03F7/70508 , G03F7/70625
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for easily and visually determining which chip has a normal exposure condition, and which chip has an abnormal exposure condition in an FEM wafer.
SOLUTION: A characteristic amount in the shape of cross-section of resist pattern of the FEM wafer is calculated for each chip region of the FEM wafer from an image of resist pattern of the FEM wafer. The characteristic amount in the shape of cross-section is displayed for each chip in a list of chips as a map showing locations of chip regions of the FEM wafer. In the list of chips, a deviation of the characteristic amount in the shape of cross-section of resist pattern of the FEM wafer for the adequate value is shown with color-display images.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于容易且可视地确定哪个芯片具有正常曝光条件的装置，以及哪个芯片在有限元晶片中具有异常曝光条件。解决方案：根据FEM晶片的抗蚀剂图案的图像，对FEM晶片的每个芯片区域计算有限元晶片的抗蚀剂图案的横截面形状的特征量。以芯片列表中的每个芯片显示横截面形状的特征量作为示出FEM晶片的芯片区域的位置的映射。在芯片列表中，利用彩色显示图像示出了有限元晶片的抗蚀剂图案的抗蚀剂图案的截面形状的特征量的适当值的偏差。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2005064023A Exposure process monitor method 有权
标题翻译：曝光过程监控方法
公开(公告)号：JP2005064023A
公开(公告)日：2005-03-10
申请号：JP2003207252
申请日：2003-08-12
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： SHISHIDO CHIE , MOROKUMA HIDETOSHI , KOJIMA TAKEKI , TANAKA MAKI , NAGATOMO WATARU
IPC分类号： H01L21/66 , G03C5/00 , G03F7/20 , G03F9/00 , H01L21/027
CPC分类号： G03F7/70641 , G03F7/705 , G03F7/70625 , Y10S430/143
摘要： PROBLEM TO BE SOLVED: To provide a means which successfully monitors/controls variation (deviation of light exposure and focal position) of exposure qualification in an exposure process monitor.
SOLUTION: A pattern having high isolating property (isolated line pattern etc.) wherein variation of cross section shape by variation of light exposure and focal source position is large is made an object to be observed. Especially, in order to catch variation of resist cross section shape which changes from forward taper to inverse taper, observation data are acquired by any one of observation methods: (1) a tilt image of a resist pattern is picturized by using an inclination image pick-up electron microscope; (2) the electronic beam image of the resist pattern is picturized on an image pick-up qualification which produces asymmetry on an electronic beam signal wave; and (3) dispersion characteristic data of the resist pattern are acquired with optical measurement system. The acquired data are applied to model data which are formed by applying exposure qualification beforehand, so that variation of light exposure and focal position is presumed.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供在曝光过程监视器中成功监控/控制曝光资格的变化（曝光和焦点位置的偏差）的手段。解决方案：具有高隔离性的图案（隔离线图案等），其中通过曝光和焦点位置的变化的横截面形状的变化大，成为观察对象。特别是，为了捕捉从正向锥度向逆锥形变化的抗蚀剂截面形状的变化，通过观察方法中的任一种来获取观察数据：（1）通过使用倾斜图像拾取法来抗蚀图案的倾斜图像电子显微镜; （2）抗电影图案的电子束图像是在电子束信号波上产生不对称的图像拾取鉴定图像上拍摄的; 和（3）光学测量系统获得抗蚀剂图案的色散特征数据。所获取的数据被应用于通过预先施加曝光资格形成的模型数据，从而推测曝光和焦点位置的变化。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2007012624A Pattern matching method and apparatus 有权
标题翻译：图案匹配方法和装置
公开(公告)号：JP2007012624A
公开(公告)日：2007-01-18
申请号：JP2006188798
申请日：2006-07-10
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YAMAGUCHI SATOSHI , IIIZUMI TAKASHI , KOMURO OSAMU , MOROKUMA HIDETOSHI , MAEDA TATSUYA , ARIMA JUNTARO , OZAWA YASUHIKO
IPC分类号： H01J37/22 , G01N23/225
摘要： PROBLEM TO BE SOLVED: To make a scanning electron microscope operate with high precision at high speed by reducing a process for inspection alignment, inputting work or the like.
SOLUTION: The scanning electron microscope having a function specifying a desired position based on a pattern registered beforehand, comprises a means for setting information about the type of the pattern, spaces between a plurality of parts forming the pattern and the size of parts forming the pattern, and a means for forming a pattern image formed of a plurality of the parts based on information acquired by the setting means.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过减少检查对准，输入工作等的处理，使扫描电子显微镜以高精度高速运行。解决方案：具有基于预先登记的图案指定期望位置的功能的扫描电子显微镜包括用于设置关于图案的类型的信息的装置，形成图案的多个部件与部件的尺寸之间的间隔形成图案，以及用于基于由设置装置获取的信息形成由多个部分形成的图案图像的装置。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2003059813A Method and system for monitoring process variation using electron beam 有权
标题翻译：使用电子束监测过程变化的方法和系统
公开(公告)号：JP2003059813A
公开(公告)日：2003-02-28
申请号：JP2001249569
申请日：2001-08-20
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KOMURO OSAMU , MOROKUMA HIDETOSHI , SHISHIDO CHIE
IPC分类号： G03F7/20 , G03F1/44 , H01J37/304 , H01J37/317 , H01L21/027
CPC分类号： G03F7/70641 , B82Y10/00 , B82Y40/00 , G03F7/70625 , H01J37/304 , H01J37/3174
摘要： PROBLEM TO BE SOLVED: To precisely monitor variation in the exposure conditions (gap between an exposure amount and focus) in a product wafer level in a lithographic process.
SOLUTION: Variation amount of exposure conditions is calculated by obtaining an electron beam image of a first pattern part and a second pattern part, which are different in change tendency of a dimensional feature amount to variation of exposure conditions, calculating the dimensional feature amount of a first pattern part and a second pattern part and applying the dimensional feature amounts to a model which correlates exposure conditions and a dimensional feature amount. A process variation monitoring system and a method, which can output precise variation amount of the exposure amount and focusing, are thereby provided.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：精确地监测光刻工艺中的产品晶片级中的曝光条件（曝光量和焦点之间的间隙）的变化。解决方案：通过获得与尺寸特征量与曝光条件变化不同的变化趋势的第一图案部分和第二图案部分的电子束图像来计算曝光条件的变化量，第一图案部分和第二图案部分，并且将所述尺寸特征量应用于将曝光条件和尺寸特征量相关联的模型。从而可以提供可以输出精确的曝光量和聚焦变化量的过程变化监视系统和方法。

6. 发明专利

JP2005156436A Semiconductor pattern measuring method and process control method 有权
标题翻译：半导体图形测量方法和过程控制方法
公开(公告)号：JP2005156436A
公开(公告)日：2005-06-16
申请号：JP2003397364
申请日：2003-11-27
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： TANAKA MAKI , MOROKUMA HIDETOSHI , SHISHIDO CHIE , TAKAGI YUJI
IPC分类号： G01B15/00 , G01B11/14 , G01N23/225 , H01J37/28 , H01J37/304 , H01L21/66
CPC分类号： H01J37/28 , H01J37/304 , H01J2237/2814 , H01J2237/2817 , H01J2237/30455
摘要： PROBLEM TO BE SOLVED: To realize a pattern dimension measuring means having high precision, which makes stable response to changes in the cross-sectional shape of a pattern, and to provide a semiconductor pattern measuring method which avoids loading on computation time, by comparatively reducing the amount of computation.
SOLUTION: In a pattern measurement system built on a length measuring SEM, a relation between the cross-sectional shape of the pattern and a measurement error in a prescribed image processing means is evaluated beforehand, by using an electron ray simulation. When an actual dimension measurement is carried out, the dimensional measurement of the pattern being an object to be evaluated is carried out, by using an image signal from the scanning electron microscope; and a dimension measurement error of the object pattern to be evaluated is estimated and compensated on the basis of the relation between the cross-sectional shape of the pattern and the measurement error being evaluated beforehand, thereby realizing a highly precise measurement, capable of eliminating dimension errors depending on three-dimensional shapes of the pattern.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：为了实现对图案的截面形状的变化进行稳定响应的高精度的图案尺寸测量装置，并且提供避免在计算时间上加载的半导体图案测量方法，通过相对减少计算量。解决方案：在基于长度测量SEM的图案测量系统中，通过使用电子射线模拟来预先评估图案的横截面形状与规定图像处理装置中的测量误差之间的关系。当进行实际尺寸测量时，通过使用来自扫描电子显微镜的图像信号来执行作为评估对象的图案的尺寸测量; 基于预先评价的图案的截面形状和测量误差之间的关系来估计和补偿要评估的对象图案的尺寸测量误差，从而实现高精度测量，能够消除尺寸错误取决于图案的三维形状。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2005077192A Three-dimensional shape measuring device, etching condition determination method, and etching process monitoring method 有权
标题翻译：三维形状测量装置，蚀刻条件测定方法和蚀刻过程监测方法
公开(公告)号：JP2005077192A
公开(公告)日：2005-03-24
申请号：JP2003306441
申请日：2003-08-29
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： TANAKA MAKI , MOROKUMA HIDETOSHI , SHISHIDO CHIE , TAKAGI YUJI
IPC分类号： G01B15/04 , H01J37/28 , H01L21/02 , H01L21/28 , H01L21/3065 , H01L21/3205 , H01L21/66 , H01L23/52 , H01L29/423 , H01L29/49
摘要： PROBLEM TO BE SOLVED: To provide a three-dimensional shape measuring device which obtains cross section shape pattern information useful for determining etching process conditions using in-line SEM images obtained by non-destructive manner, and to realize effective process control by obtaining section shape pattern information using a SEM which is non-destructive and relatively easy to measure. SOLUTION: A pattern shape evaluation system detects secondary electrons generated from a sample by irradiating a converged electron beam and processes the detected signals in which the detected signal waveform is divided into a plurality of areas according to changes in the amount of the signals and the three-dimensional shape of the sample is evaluated quantitatively from the sizes of the divided areas. By displaying the measurement result of pattern shape by divided signal waveforms (bottom width of the final shape 703, resist bottom width by exposure 704, the amount of etching shift 705, and etching tilt angle component706), users can easily comprehend how much of which component changes in the total changes. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种三维形状测量装置，其获得用于使用通过非破坏性方式获得的在线SEM图像确定蚀刻工艺条件的截面形状图案信息，并且通过以下方式实现有效的过程控制使用非破坏性且相对容易测量的SEM获得截面形状图案信息。解决方案：图案形状评估系统通过照射会聚电子束来检测从样品产生的二次电子，并根据信号量的变化将检测信号波形划分成多个区域的检测信号进行处理并且从分割区域的尺寸定量地评价样品的三维形状。通过分割信号波形（最终形状703的底部宽度，曝光704的抗蚀剂底部宽度，蚀刻移位量705，蚀刻倾斜角度成分706）来显示图案形状的测量结果，用户可以容易地理解其中多少组件变化的总体变化。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2003173948A MANUFACTURING PROCESS MONITORING METHOD AND SYSTEM FOR THE SAME 审中-公开
公开(公告)号：JP2003173948A
公开(公告)日：2003-06-20
申请号：JP2002036131
申请日：2002-02-14
申请人： HITACHI LTD
发明人： TANAKA MAKI , SHISHIDO CHIE , TAKAGI YUJI , YOSHITAKE YASUHIRO , MATSUMOTO SHUNICHI , KOMURO OSAMU , IIIZUMI TAKASHI , MOROKUMA HIDETOSHI , WATANABE MASAHIRO
IPC分类号： G03F7/20 , H01L21/02 , H01L21/027 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To solve the problem that there is no method of detecting variations in conditions (deviation of exposure and focus) of an exposure system at a product wafer level in a lithography process. SOLUTION: The calculation results of features such as electron beam images, line profiles, and sizes for various exposures and focal value are previously stored as libraries, and the calculation result and the electron beam image of a product wafer is compared with each other, so that a variation in exposure and focus can be easily detected, and a comparison result can be easily verified on an image screen. COPYRIGHT: (C)2003,JPO

9. 发明专利

JP2001338601A SCANNING ELECTRON MICROSCOPE 失效
公开(公告)号：JP2001338601A
公开(公告)日：2001-12-07
申请号：JP2000159062
申请日：2000-05-29
申请人： HITACHI LTD , HITACHI SCIENCE SYSTEMS LTD
发明人： NAKADA YOSHINORI , KOSHIHARA SHUNSUKE , TAMOCHI RYUICHIRO , HOSOYA YAYOI , MOROKUMA HIDETOSHI
IPC分类号： G01N23/225 , G01Q10/00 , G01Q30/02 , G01Q30/04 , G01Q30/06 , G21K7/00 , H01J37/20 , H01J37/26 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To provide a scanning electron microscope which can completely automatically perform from fine adjustment to reviewing. SOLUTION: Functions of calculating a compensation accuracy after a coordinate compensation and displaying it with a vector 39, of determining magnifying ratio automatically in automatically detecting foreign goods/defects after the compensation from the informations gained, and of calculating incidence of foreign goods/defects and time needed from the search magnifying factor and measurement conditions are provided.

10. 发明专利

JP2001156132A CHARGED PARTICLE BEAM IRRADIATION APPARATUS 失效
公开(公告)号：JP2001156132A
公开(公告)日：2001-06-08
申请号：JP33382999
申请日：1999-11-25
申请人： HITACHI LTD
发明人： GUNJI KAZUHIRO , IIIZUMI TAKASHI , MOROKUMA HIDETOSHI , KUROSAKI TOSHISHIGE , AOKI KAZUO , YAMADA OSAMU
IPC分类号： H01J37/20 , G01N23/225 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a charged particle beam irradiation apparatus, such as a scanning electron microscope, where time-consuming movement of a stage of a relatively long distance and change in the state of a device are reduced and observation/discrimination time for foreign matters and defects is reduced. SOLUTION: In this apparatus, time-consuming movement of a stage over a relatively long distance is reduced, by considering movement order of an image-acquiring position and the frequency of change of the state of the device, which takes time is reduced by considering the order of image acquiring and device state change. Thereby, the number of defects which can be inspected per unit time can be increased.

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