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1. 发明专利

JP2008205017A Exposure state display method and system 有权
标题翻译：暴露状态显示方法和系统
公开(公告)号：JP2008205017A
公开(公告)日：2008-09-04
申请号：JP2007036521
申请日：2007-02-16
申请人： Hitachi High-Tech Science Systems Corp , Hitachi High-Technologies Corp , 株式会社日立ハイテクサイエンスシステムズ , 株式会社日立ハイテクノロジーズ
发明人： KOIKE HIROTO , MOROKUMA HIDETOSHI , SHISHIDO CHIE
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/70641 , G03F7/70508 , G03F7/70625
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for easily and visually determining which chip has a normal exposure condition, and which chip has an abnormal exposure condition in an FEM wafer.
SOLUTION: A characteristic amount in the shape of cross-section of resist pattern of the FEM wafer is calculated for each chip region of the FEM wafer from an image of resist pattern of the FEM wafer. The characteristic amount in the shape of cross-section is displayed for each chip in a list of chips as a map showing locations of chip regions of the FEM wafer. In the list of chips, a deviation of the characteristic amount in the shape of cross-section of resist pattern of the FEM wafer for the adequate value is shown with color-display images.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于容易且可视地确定哪个芯片具有正常曝光条件的装置，以及哪个芯片在有限元晶片中具有异常曝光条件。解决方案：根据FEM晶片的抗蚀剂图案的图像，对FEM晶片的每个芯片区域计算有限元晶片的抗蚀剂图案的横截面形状的特征量。以芯片列表中的每个芯片显示横截面形状的特征量作为示出FEM晶片的芯片区域的位置的映射。在芯片列表中，利用彩色显示图像示出了有限元晶片的抗蚀剂图案的抗蚀剂图案的截面形状的特征量的适当值的偏差。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2013246062A Pattern inspection device and pattern inspection method 有权
标题翻译：模式检验装置和模式检验方法
公开(公告)号：JP2013246062A
公开(公告)日：2013-12-09
申请号：JP2012120381
申请日：2012-05-28
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： SHISHIDO CHIE , MURAKAMI SHINYA , HIROI TAKASHI , NINOMIYA HIROSHI , NAKANO MICHIO
IPC分类号： G01B15/04 , G01N23/225 , G03F1/86 , G06T1/00 , H01L21/027
CPC分类号： G01N23/2251 , G01B15/04 , G03F7/7065 , H01J37/222 , H01J37/28 , H01J2237/24578 , H01J2237/2806 , H01J2237/2817
摘要： PROBLEM TO BE SOLVED: To provide a pattern inspection device in which an electron beam image of a circuit pattern on a wafer is accurately simulated from design data and the highly accurate defect detection is achieved by comparison between the simulated electron beam image and a real image.SOLUTION: A pattern inspection device includes: an imaging part which images an electron beam image of a pattern formed on a substrate; a simulated electron beam image generation part which generates a simulated electron beam image using a parameter representing characteristics of the electron beam image based on design data; and an inspection part which inspects the pattern on the substrate in comparison between the electron beam image imaged by the imaging part and the simulated electron beam image generated by the simulated electron beam image generation part.
摘要翻译：要解决的问题：提供一种图案检查装置，其中从设计数据精确地模拟晶片上的电路图案的电子束图像，并且通过比较模拟的电子束图像和实际图像来实现高精度的缺陷检测解决方案：图案检查装置包括：成像部，其对形成在基板上的图案的电子束图像进行成像; 模拟电子束图像生成部，其使用基于设计数据的表示电子束图像的特性的参数来生成模拟电子束图像; 以及检查部件，其比较由成像部件成像的电子束图像和由模拟电子束图像生成部件产生的模拟电子束图像，来检查基板上的图案。

3. 发明专利

JP2013053986A Pattern inspection method and device thereof 审中-公开
标题翻译：模式检验方法及其装置
公开(公告)号：JP2013053986A
公开(公告)日：2013-03-21
申请号：JP2011193605
申请日：2011-09-06
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： MURAKAMI SHINYA , SHISHIDO CHIE
IPC分类号： G01N23/225
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor pattern inspection device which detects a systematic defect without causing many pieces of misinformation.SOLUTION: A semiconductor pattern inspection device is constituted so as to calculate an identification boundary for identifying misinformation and a defect by using feature quantity extracted from an image obtained by picking up an inspection objet pattern, feature quantity of a part corresponding to the image obtained by picking up the inspection object pattern extracted from a design data image generated from design data, and information on teaching data created by using the image obtained by picking up the inspection object pattern and the design data image, to calculate image feature quantity of an inspection area of the inspection object pattern from the image obtained by picking up the inspection area of the inspection object pattern from the image obtained by picking up the inspection area of the inspection object pattern, to create the design data image from the design data corresponding to the inspection area of the inspection object pattern, to calculate feature quantity of the created design data image, and to detect a defect in the inspection area of the inspection object pattern based on the calculated image feature quantity of the inspection area of the inspection object pattern, the feature quantity of the design data image, and the identification boundary.
摘要翻译：要解决的问题：提供一种检测系统缺陷而不引起许多错误信息的半导体图案检查装置。解决方案：半导体图案检查装置被构成为通过使用从通过拾取检查对象图案获得的图像提取的特征量来计算用于识别误信息的识别边界和缺陷，对应于通过拾取从设计数据生成的设计数据图像中提取的检查对象图案获得的图像，以及通过使用通过拾取检查对象图案和设计数据图像而获得的图像而创建的教学数据的信息，计算图像特征量通过从通过拾取检查对象图案的检查区域获得的图像中拾取检查对象图案的检查区域而获得的图像的检查对象图案的检查区域，从对应的设计数据创建设计数据图像到检验对象图案的检查区域，计算特征量，并且基于计算出的检查对象图案的检查区域的图像特征量，设计数据图像的特征量和识别信息来检测检查对象图案的检查区域中的缺陷边界。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2011043458A Pattern size measuring method and system therefor 审中-公开
标题翻译：图形尺寸测量方法及其系统
公开(公告)号：JP2011043458A
公开(公告)日：2011-03-03
申请号：JP2009192983
申请日：2009-08-24
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： SHISHIDO CHIE , MIYAMOTO ATSUSHI , BABA SHUICHI , WATANABE MASAHIRO , TANAKA MAKI
IPC分类号： G01B15/00
摘要： PROBLEM TO BE SOLVED: To solve the problem in a conventional method, wherein size measurement on the same spot is not easy to be performed by a length-measuring SEM (scanning electron microscope) and an AFM (atomic force microscope) hitherto, though, in order to calibrate a measured value by the length-measuring SEM, for example, comparison with a measured value by the AFM is necessary, because the length-measuring SEM enabling high-speed size measurement has a systematic measuring bias depending on a pattern shape theoretically.
SOLUTION: Imaging recipes of the length-measuring SEM and the AFM are generated automatically by using design layout data. Imaging position deviation and imaging magnification deviation between both devices are corrected automatically. Thereby, verification between size measurement results by both devices can be performed easily with high accuracy.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题为了解决现有方法中的问题，其中在同一点上的尺寸测量不容易通过迄今为止的长度测量SEM（扫描电子显微镜）和AFM（原子力显微镜）进行然而，为了通过长度测量SEM校准测量值，例如，需要与AFM的测量值进行比较，因为能够进行高速尺寸测量的长度测量SEM具有系统的测量偏置，取决于理论上的模式形状。
解决方案：使用设计布局数据自动生成长度测量SEM和AFM的成像配方。两个设备之间的成像位置偏差和成像放大偏差自动校正。因此，可以容易地以高精度执行两个装置的尺寸测量结果之间的验证。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2010175318A Charged particle beam apparatus 有权
标题翻译：充电颗粒光束装置
公开(公告)号：JP2010175318A
公开(公告)日：2010-08-12
申请号：JP2009016550
申请日：2009-01-28
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： SHISHIDO CHIE , MIYAMOTO ATSUSHI , IWASAKI MAYUKA , NISHIURA TOMOFUMI , KAMITAKI TAKESHI
IPC分类号： G01B15/00 , H01J37/22
CPC分类号： H01J37/3045 , G01B2210/56 , H01J37/244 , H01J37/28 , H01J2237/24578 , H01J2237/24592 , H01J2237/2817 , H01J2237/2826
摘要： PROBLEM TO BE SOLVED: To provide a charged particle beam apparatus which has the function of preventing deterioration in measurement reproducibility caused by an increase in a beam diameter by an image shift to cope with the occurrence of a machine difference.
SOLUTION: In the charged particle beam apparatus scans a converged primary charged particle beam over a sample and measures pattern size on the sample using a line profile obtained by detecting secondary charged particles emitted from the sample, a lookup table which makes image shift position associated with a beam diameter change is determined through actual measurement or calculation is registered in advance. In the measurement of a size, the lookup table is referred to, and image processing for compensating for a beam diameter change is performed on the line profile, thereby generating a status with an effectively equal beam diameter regardless of an image shift position. Charged particle beam measurement with superior reproducibility can be thereby performed.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种具有防止由于通过图像偏移增加光束直径引起的测量再现性劣化的带电粒子束装置，以应对机器差异的发生。解决方案：在带电粒子束装置中，在样品上扫描会聚的初级带电粒子束，并使用通过检测从样品发射的二次带电粒子获得的线轮廓来测量样品上的图案尺寸，使得图像偏移的查找表通过实际测量确定与光束直径变化相关联的位置，或者预先记录计算。在尺寸的测量中，参考查找表，并且在线轮廓上执行用于补偿光束直径变化的图像处理，从而生成具有有效相等的光束直径的状态，而与图像偏移位置无关。由此可以实现具有优异的再现性的带电粒子束测量。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009204374A Scanning electron microscope and pattern dimension measurement method using the same 有权
标题翻译：扫描电子显微镜和图案尺寸测量方法
公开(公告)号：JP2009204374A
公开(公告)日：2009-09-10
申请号：JP2008045400
申请日：2008-02-27
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： NAGATOMO WATARU , SHISHIDO CHIE , TANAKA MAKI
IPC分类号： G01B15/00 , G01N23/225 , H01J37/22 , H01J37/28 , H01L21/66
CPC分类号： G01N23/225
摘要： PROBLEM TO BE SOLVED: To overcome the problem that the measurement accuracy is deteriorated by a variation in an error between a dimension measurement value and an actually-measured pattern dimension depending on a cross-sectional shape of a pattern in a semiconductor pattern dimension measurement by a CD-SEM.
SOLUTION: An AFM measurement result of a plurality of the patterns having different shapes is stored in a database in association with the dimension measurement error obtained by the AFM measurement result when the identical shape pattern is measured by the CD-SEM. When the dimension is actually measured, the AFM measurement result is obtained from a small number of regions in the to-be-measured pattern, and compared with the database. The dimension measurement error obtained by the CD-SEM measurement and corresponding to the most similar sidewall shape is referred. A corrected dimension has the reduced dimension error depending on the cross-sectional shape of the pattern, and is calculated by correcting the CD-SEM measurement result of the to-be-measured pattern based on the referred dimension measurement error.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了克服由于半导体图案中的图案的横截面形状而导致的尺寸测量值与实际测量图案尺寸之间的误差的变化而导致测量精度恶化的问题通过CD-SEM进行尺寸测量。解决方案：当通过CD-SEM测量相同的形状图案时，将具有不同形状的多个图案的AFM测量结果与通过AFM测量结果获得的尺寸测量误差相关联地存储在数据库中。当实际测量尺寸时，AFM测量结果从待测样式中的少量区域获得，并与数据库进行比较。参考通过CD-SEM测量获得并对应于最相似的侧壁形状的尺寸测量误差。校正的尺寸具有取决于图案的横截面形状的尺寸误差，并且通过基于所提及的尺寸测量误差校正待测量图案的CD-SEM测量结果来计算。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2009198339A Method of measuring pattern dimension 有权
标题翻译：测量图形尺寸的方法
公开(公告)号：JP2009198339A
公开(公告)日：2009-09-03
申请号：JP2008040817
申请日：2008-02-22
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： TANAKA MAKI , SHISHIDO CHIE
IPC分类号： G01B15/00 , H01J37/22 , H01J37/28 , H01L21/66
CPC分类号： G06T7/001 , G06T2207/30148
摘要： PROBLEM TO BE SOLVED: To improve a simulation in accuracy in an operation of a pattern measurement of a SEM image by using an electron ray simulation, and to appropriately model a material and a shape of an object to be measured and reflect a modeled result to a simulation image in order to carry out a matching operation of the simulation image and an actual image.
SOLUTION: A method uses the simulation image obtained by appropriately setting a shape and a dimension which significantly affect on accuracy of the matching measurement using the simulation and the actual image, based on the SEM image and information obtained from other measurement apparatuses such as an AFM and the like, thereby achieving a precise pattern measurement.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了通过使用电子射线模拟来改善对SEM图像的图案测量的操作的精度的模拟，并且适当地对要测量的物体的材料和形状进行建模并反射将模拟结果映射到模拟图像，以便执行模拟图像和实际图像的匹配操作。解决方案：一种方法使用通过适当地设置对使用仿真和实际图像的匹配测量的精度影响的形状和尺寸而获得的模拟图像，基于从其他测量装置获得的SEM图像和信息作为AFM等，从而实现精确的图案测量。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2007218711A Method for measuring measurement target pattern using electron microscope device 审中-公开
标题翻译：使用电子显微镜装置测量测量目标图案的方法
公开(公告)号：JP2007218711A
公开(公告)日：2007-08-30
申请号：JP2006038945
申请日：2006-02-16
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： TANAKA MAKI , SHISHIDO CHIE
IPC分类号： G01B15/04 , H01J37/22 , H01J37/28 , H01L21/66
CPC分类号： G01N23/2251 , G01N2223/6116 , H01J2237/24578
摘要： PROBLEM TO BE SOLVED: To provide a method for stabilizing, speeding up, and making a measurement method accurate, using an electron beam simulation by reflecting the device characteristics of a length-measuring SEM to the electron beam simulation. SOLUTION: In the measurement method of a measurement target pattern, the length-measuring SEM is used, which has a library creation process for generating an SEM simulation waveform by performing an electron beam simulation, while reflecting device characteristics and image acquisition conditions to diversified target pattern shapes, in advance, and storing the combination with pattern shape information, corresponding to the generated SEM simulated waveform as a library; and a measurement process for comparing the acquired actual electron microscope image with the SEM simulated waveform, selecting the SEM simulated waveform best matching the actual electron microscope image, and estimating the shape of the measurement target pattern from the pattern shape information corresponding to the selected SEM simulated waveform. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了通过将长度测量SEM的器件特性反映到电子束模拟中，使用电子束模拟来提供稳定，加速和使测量方法准确的方法。解决方案：在测量目标图案的测量方法中，使用长度测量SEM，其具有通过执行电子束模拟产生SEM模拟波形的库创建过程，同时反映器件特性和图像获取条件预先对多样化的目标图案形状，并将与生成的SEM模拟波形对应的图案形状信息的组合存储为库; 以及用于比较所获得的实际电子显微镜图像与SEM模拟波形的测量过程，选择与实际电子显微镜图像最匹配的SEM模拟波形，并根据与所选择的SEM对应的图案形状信息来估计测量对象图案的形状模拟波形。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2007122995A Apparatus difference control system in scanning electron microscope apparatus and its method 有权
标题翻译：扫描电子显微镜装置中的装置差分控制系统及其方法
公开(公告)号：JP2007122995A
公开(公告)日：2007-05-17
申请号：JP2005312316
申请日：2005-10-27
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： OSAKI MAYUKA , SHISHIDO CHIE , KAWADA HIROKI , MAEDA TATSUYA
IPC分类号： H01J37/24 , G01B15/00 , H01J37/28 , H01L21/66
CPC分类号： H01J37/28 , H01J2237/282
摘要： PROBLEM TO BE SOLVED: To provide an apparatus difference control apparatus capable of reducing a measured dimension difference among a plurality of apparatuses by simply estimating generation factors of the apparatus difference to calibrate a scanning electron microscope apparatus based on the estimation result, and allowing further accurate dimension control of a wiring pattern. SOLUTION: This system and its method for controlling apparatus differences among apparatuses and apparatus differences due to temporal change in scanning electron microscope apparatuses are characterized by comprising measurement means 10, 301a, 301b; 18, 301a for measuring apparatus differences among the apparatuses and due to temporal change based on secondary electron image data obtained by imaging a standard wafer and nearly simultaneously measuring index values representing various kinds of apparatus statuses, apparatus difference factor analysis parts 301c and 301e for estimating apparatus difference generation factors by analyzing relationships among the apparatus differences measured by the measurement means and the index values representing the various kinds of apparatus statuses, and an output means 302 for displaying and outputting the apparatus difference generation factors estimated by the apparatus difference factor analysis part. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种装置差异控制装置，其能够通过简单地估计装置差异的产生因素来减少多个装置之间的测量尺寸差异，以基于估计结果校准扫描电子显微镜装置，以及允许进一步精确地对布线图案进行尺寸控制。解决方案：该扫描电子显微镜装置的时间变化控制装置差异的系统及其方法的特征在于包括测量装置10,301a，301b; 18，301a，用于测量设备之间的差异，并且由于基于通过对标准晶片进行成像而获得的二次电子图像数据的时间变化，并且几乎同时测量表示各种装置状态的指标值，装置差异因子分析部件301c和301e用于估计通过分析由测量装置测量的装置差异与表示各种装置状态的指标值之间的关系的装置差产生因子，以及输出装置302，用于显示和输出由装置差异因子分析部分估计的装置差产生因子。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2005017145A Sample dimension measuring method and charged particle beam device 有权
标题翻译：样品尺寸测量方法和充电颗粒光束装置
公开(公告)号：JP2005017145A
公开(公告)日：2005-01-20
申请号：JP2003183715
申请日：2003-06-27
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： WATANABE KENJI , OTAKA TADASHI , NAKAGAKI AKIRA , SHISHIDO CHIE , TAKAHASHI MASAKAZU , TOYOSHIMA YUYA
IPC分类号： G01B11/24 , G01B15/04 , G01N21/47 , G01N23/225 , H01J37/28 , H01L21/66
CPC分类号： G01N21/4788 , G01N23/225 , H01J2237/2816
摘要： PROBLEM TO BE SOLVED: To provide a method and a device for efficiently executing two measurements by an optical measuring device and a scanning electron microscope. SOLUTION: This method and the device to be provided are characterized by calculating the mean value of dimension values of a plurality of characteristic objects, and calculating an offset value of the dimension value based on the difference between the calculated mean value and the dimension value of the characteristic object acquired when light is irradiated. When measuring the dimension of the first pattern on a semiconductor wafer, the second pattern other than the first pattern is irradiated with light, and its dimension is measured. When the dimension value is a prescribed value or more or exceeds the prescribed value, dimension measurement to the first pattern is executed. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种通过光学测量装置和扫描电子显微镜有效地执行两次测量的方法和装置。解决方案：该方法和要提供的装置的特征在于计算多个特征对象的维度值的平均值，并且基于计算出的平均值和照射光时获得的特征物体的尺寸值。当测量半导体晶片上的第一图案的尺寸时，除了第一图案之外的第二图案用光照射，并测量其尺寸。当尺寸值为规定值以上或超过规定值时，执行对第一图案的尺寸测量。版权所有（C）2005，JPO＆NCIPI

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