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1. 发明专利

JP2015052571A 歪検知装置及びその製造方法有权
标题翻译：失真检测装置及其制造方法
公开(公告)号：JP2015052571A
公开(公告)日：2015-03-19
申请号：JP2013186705
申请日：2013-09-09
申请人：株式会社東芝 , Toshiba Corp
发明人： ASANO YUSAKU , HIGUCHI KAZUTO , MIYAGI TAKESHI , HIGASHI YOSHIHIRO , HARA MICHIKO , FUKUZAWA HIDEAKI , KII MASAYUKI , FUJISAWA EIZO
IPC分类号： G01B7/24 , H01L43/02 , H01L43/08
CPC分类号： G01L1/125
摘要：【課題】磁気シールド特性に優れた製品を生産性高く提供することができる歪検知装置及びその製造方法を提供すること。【解決手段】実施形態に係る歪検知装置は、基板と、蓋部と、枠部と、検知部と、を含む。基板は、第1面を有する。蓋部は、第1面の上に設けられる。枠部は、基板と蓋部との間に設けられ、磁性体を含み、非導通性である。検知部は、基板と蓋部との間であって枠部の内側に設けられ、磁気抵抗効果素子を有する。検知部は、固体部と、磁気抵抗効果素子が設けられた可動部と、を有する。磁気抵抗効果素子は、磁化の向きが第1面に沿った方向に固定された固定層と、磁化の向きが固定されていない自由層と、を有する。【選択図】図1
摘要翻译：要解决的问题：提供一种能够以高生产率提供具有优异的磁屏蔽性能的产品的失真检测装置及其制造方法。根据实施例的失真检测装置包括基板，盖部分，框架部分和检测部分。基板包括第一表面。盖部分设置在第一表面上。框架部分设置在基板和盖部分之间，包括磁性物质，并且是不导电的。检测部设置在基板和盖部之间以及框架部内部，并且包括磁阻效应元件。检测部分还包括实心部分和设置有磁阻效应元件的可移动部分。磁阻效应元件包括其中沿着第一表面的方向上固定磁化方向的固定层和其中磁化方向不固定的自由层。

2. 发明专利

JP2014239263A 光半導体装置有权
标题翻译：光学半导体器件
公开(公告)号：JP2014239263A
公开(公告)日：2014-12-18
申请号：JP2014195532
申请日：2014-09-25
申请人：株式会社東芝 , Toshiba Corp
发明人： KOIZUMI HIROSHI , OKADA YASUHIDE , OBATA SUSUMU , NAKA TOMOMICHI , HIGUCHI KAZUTO , SHIMOKAWA KAZUO , SUGIZAKI YOSHIAKI , KOJIMA AKIHIRO
IPC分类号： H01L33/54 , H01L33/50 , H01L33/62
摘要：【課題】低コストで大量生産が可能であり、半導体発光素子と同程度に小型化することも可能な光半導体装置を提供する。【解決手段】第1の樹脂の層と、活性層を有する第2の樹脂の層と、が間に基板を介することなく積層され、前記活性層の1つの面は、前記第1の樹脂の層に面して配置され、前記活性層の側面は、前記第2の樹脂の層に包囲されていることを特徴とする光半導体装置が提供される。【選択図】図1
摘要翻译：要解决的问题：提供一种允许以低成本批量生产并且与半导体发光元件的尺寸相同程度的小型化的光学半导体器件。解决方案：提供一种光学半导体器件，其中第一树脂层和具有活性层的第二树脂层被层叠而不插入基板，有源层的一个表面设置成面对第一树脂层，并且有源层的侧表面被第二树脂包围层。

3. 发明专利

JP2013219324A Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：JP2013219324A
公开(公告)日：2013-10-24
申请号：JP2013006553
申请日：2013-01-17
申请人： Toshiba Corp , 株式会社東芝
发明人： TOJO HIROSHI , HIGUCHI KAZUTO , IGUCHI TOMOHIRO , FUKUMITSU MASAKO , HIRATSUKA DAISUKE , SASAKI AKIHIRO , UCHIDA MASAYUKI
IPC分类号： H01L23/12 , H01L23/48
CPC分类号： H01L23/4952 , H01L21/50 , H01L23/051 , H01L23/49844 , H01L23/5389 , H01L24/19 , H01L24/20 , H01L24/97 , H01L2224/04105 , H01L2224/24137 , H01L2224/2518 , H01L2224/45124 , H01L2924/00014 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/15787 , H01L2924/181 , H01L2924/00 , H01L2224/48
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having high connection reliability and high mounting property, and a method for manufacturing a semiconductor device.SOLUTION: A semiconductor device of an embodiment includes a chip having a first chip electrode on a first surface of one side and a second chip electrode on a second surface of the other side, a conductive frame of conductivity arranged at a side periphery of the chip, an insulation side part provided between the conductive frame and the side periphery of the chip, and a re-wiring for electrically connecting the second chip electrode and the conductive frame in the other side of the chip.
摘要翻译：要解决的问题：提供具有高连接可靠性和高安装性能的半导体器件及其半导体器件的制造方法。一种实施方式的半导体器件包括在第一表面上具有第一芯片电极的芯片在另一侧的第二表面上具有导电性框架，设置在芯片的侧面的导电性框架，设置在导体框架与芯片侧面之间的绝缘侧部，用于将第二芯片电极和芯片的另一侧中的导电框架电连接的布线。

4. 发明专利

JP2013077852A Light source device using semiconductor light-emitting device 有权
标题翻译：使用半导体发光器件的光源器件
公开(公告)号：JP2013077852A
公开(公告)日：2013-04-25
申请号：JP2013016224
申请日：2013-01-30
申请人： Toshiba Corp , 株式会社東芝
发明人： NISHIUCHI HIDEO , HIGUCHI KAZUTO , OBATA SUSUMU , NAKAYAMA TOSHIYA
IPC分类号： H01L33/64
摘要： PROBLEM TO BE SOLVED: To provide a light source device using a small semiconductor light-emitting device and having a high heat radiation property.SOLUTION: According to one embodiment, provided is a light source device having a semiconductor light-emitting device, a mounting substrate, a first connection material, and a second connection material. The semiconductor light-emitting device includes a light-emission part, a first conductive part, a second conductive part, an encapsulation part, and an optical layer. The mounting substrate includes a base substance, a first substrate electrode and a second substrate electrode. The connection materials electrically connect between the conductive parts and the substrate electrodes. The first and second conductive parts include first and second pillar parts electrically connected with an electrode of the light-emission part and erected on a second principal surface. The encapsulation part covers lateral faces of the first and second conductive parts. The optical layer includes a wavelength converter and is provided on an opposite side to the second principal surface, of a semiconductor lamination body. An area of the second substrate electrode is one hundred times as large as a cross sectional area of the second pillar part. A vertical length and a lateral length of a planar shape of the first substrate electrode and the second substrate electrode are equal to each other.
摘要翻译：解决的问题：提供一种使用小型半导体发光装置并具有高散热性的光源装置。解决方案：根据一个实施例，提供了一种具有半导体发光器件，安装衬底，第一连接材料和第二连接材料的光源器件。半导体发光器件包括发光部分，第一导电部分，第二导电部分，封装部分和光学层。安装基板包括基体，第一基板电极和第二基板电极。连接材料在导电部件和基板电极之间电连接。第一和第二导电部分包括与发光部分的电极电连接并竖立在第二主表面上的第一和第二柱部分。封装部分覆盖第一和第二导电部件的侧面。光学层包括波长转换器，并且设置在半导体层叠体的与第二主表面相对的一侧。第二基板电极的面积是第二柱部的截面积的一百倍。第一基板电极和第二基板电极的平面形状的垂直长度和横向长度彼此相等。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2012146898A Light emitting device, light emitting module, and method for manufacturing light emitting device 有权
标题翻译：发光装置，发光模块及制造发光装置的方法
公开(公告)号：JP2012146898A
公开(公告)日：2012-08-02
申请号：JP2011005625
申请日：2011-01-14
申请人： Toshiba Corp , 株式会社東芝
发明人： SUGIZAKI YOSHIAKI , KOJIMA AKIHIRO , AKIMOTO YOSUKE , HIGUCHI KAZUTO , OBATA SUSUMU , YASUDA HIDEFUMI , TAKAHASHI NOZOMI , TAMURA HIDEO
IPC分类号： H01L33/62
CPC分类号： H01L33/36 , H01L21/28 , H01L23/49805 , H01L33/486 , H01L33/50 , H01L33/52 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a small and inexpensive light emitting device, a light emitting module, and a method for manufacturing the light emitting device.SOLUTION: According to an embodiment, a light emitting device comprises a semiconductor layer, a p-side electrode, an n-side electrode, a first insulation layer, a p-side wiring layer, an n-side wiring layer, and a second insulation layer. The semiconductor layer includes a first face, a second face formed opposite to the first face, and a light emitting layer. The p-side electrode is provided in a region having the light emitting layer on the second face. The n-side electrode is provided in a region not including the light emitting layer on the second face. The p-side wiring layer has a p-side external terminal exposed from the second insulation layer on a third face in an orientation different from those of the first face and the second face. The n-side wiring layer has an n-side external terminal exposed from the second insulation layer on the third face same as that of the p-side external terminal.
摘要翻译：要解决的问题：提供一种小型廉价的发光器件，发光模块和用于制造发光器件的方法。解决方案：根据实施例，发光器件包括半导体层，p侧电极，n侧电极，第一绝缘层，p侧布线层，n侧布线层，和第二绝缘层。半导体层包括第一面，与第一面相对的第二面和发光层。 p侧电极设置在第二面上具有发光层的区域中。 n侧电极设置在不包括第二面上的发光层的区域中。 p侧配线层的p侧外部端子以与第一面和第二面不同的方向在第三面上从第二绝缘层露出。 n侧配线层具有从与p侧外部端子相同的第三面上的第二绝缘层露出的n侧外部端子。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2010087490A Semiconductor device and semiconductor device manufacturing method 有权
标题翻译：半导体器件和半导体器件制造方法
公开(公告)号：JP2010087490A
公开(公告)日：2010-04-15
申请号：JP2009201415
申请日：2009-09-01
申请人： Toshiba Corp , 株式会社東芝
发明人： TOJO HIROSHI , KITANI TOMOYUKI , HIGUCHI KAZUTO , OISHI MASAKO , IGUCHI TOMOHIRO , NISHIUCHI HIDEO , KATO KYOKO
IPC分类号： H01L23/48
CPC分类号： H01L24/97 , H01L21/561 , H01L21/568 , H01L23/3107 , H01L23/544 , H01L24/03 , H01L24/48 , H01L2223/54433 , H01L2223/54486 , H01L2224/04042 , H01L2224/274 , H01L2224/48091 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2924/19041 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which improves an electric characteristic and keeps high reliability by means of a structure without using a bonding wire, and which can improve a productivity by removing a laser machining process and shortening a manufacturing time, and to provide its manufacturing method. SOLUTION: The semiconductor device includes a semiconductor chip 2 in which a first electrode 2a1 is located on a first surface 2a and a second electrode 2b1 is located on a second surface 2b opposed to the first surface 2a, a sealing component 3 which exposes only areas of the first electrode 2a1 and second electrode 2b1 to seal the other surface of the semiconductor chip 2, an internal electrode 4 which is connected with the first electrode 2a1 or the second electrode 2b1, and a thickness from the first surface 2a and second surface 2b is the same as the thickness of the sealing component 3, an external electrode 5 which is connected with the internal electrode 4, is formed on the sealing component 3 too, and is at least wider than the width of the semiconductor chip 2, and external plating films 6 which cover five surfaces except for the surface of the external electrode 5 connected with the internal electrode 4. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过不使用接合线的结构提高电特性并保持高可靠性的半导体器件，并且可以通过去除激光加工过程并缩短制造时间来提高生产率并提供其制造方法。解决方案：半导体器件包括半导体芯片2，其中第一电极2a1位于第一表面2a上，第二电极2b1位于与第一表面2a相对的第二表面2b上，密封部件3 仅露出第一电极2a1和第二电极2b1的区域，以密封半导体芯片2的另一个表面，与第一电极2a1或第二电极2b1连接的内部电极4和来自第一表面2a和第二表面2b与密封部件3的厚度相同，与内部电极4连接的外部电极5也形成在密封部件3上，并且至少比半导体芯片2的宽度宽，以及外部电镀膜6，其覆盖与内部电极4连接的外部电极5的表面以外的五个表面。（C）2010，JPO＆INPIT

7. 发明专利

JP2008252053A Method for manufacturing semiconductor device and the semiconductor device 有权
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：JP2008252053A
公开(公告)日：2008-10-16
申请号：JP2007138086
申请日：2007-05-24
申请人： Toshiba Corp , 株式会社東芝
发明人： UCHIDA MASAYUKI , ITO HISASHI , HIGUCHI KAZUTO , TOGASAKI TAKASHI
IPC分类号： H01L21/60
CPC分类号： H05K3/3436 , H01L21/563 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/13016 , H01L2224/13023 , H01L2224/13099 , H01L2224/13111 , H01L2224/16013 , H01L2224/81191 , H01L2224/81211 , H01L2224/81801 , H01L2224/83102 , H01L2224/92125 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01025 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01057 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H05K3/3463 , H05K3/3494 , H05K2201/0379 , H05K2201/09427 , H05K2203/1121 , Y02P70/613 , H01L2224/29099 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device and a semiconductor device, which suppresses breakdown after flip-chip connection of a semiconductor device, using a lead-free solder and a low dielectric constant insulating film, and improves the yield in production with high reliability. SOLUTION: A step where a bump electrode 2 and a precoat 35 are formed of a tin and copper alloy, and an electrode pad 13 of a semiconductor 1 and an electrode pad 33 of an interposer substrate 3 are connected via the bump electrode 2, by heating and melting the bump electrode 2, wherein the bump electrode 2 is heated in a temperature profile, where a temperature of 190 to 210°C is kept for 3 to 15 minutes at the time of lowering the temperature after the bump electrode 2 is heated to the meting temperature of the bump electrode 2 or higher. The condition of 1.4 b a a , and that of the electrode pad 13 is as L b . COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体器件和半导体器件的制造方法，其使用无铅焊料和低介电常数绝缘膜来抑制半导体器件的倒装芯片连接之后的击穿，以及以高可靠性提高生产产量。解决方案：凸块电极2和预涂层35由锡和铜合金形成的步骤，半导体1的电极焊盘13和内插基片3的电极焊盘33经由突起电极如图2所示，通过对突起电极2进行加热熔融，其中凸起电极2在降低凸点电极后的温度时保持温度为190〜210℃的温度分布3〜15分钟的温度分布 2被加热到凸块电极2的温度或更高。如果电极焊盘33的直径为L a ，则满足1.4 b a <1.6的条件，的电极焊盘13为L b 。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008078561A Semiconductor device and its manufacturing method 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2008078561A
公开(公告)日：2008-04-03
申请号：JP2006258930
申请日：2006-09-25
申请人： Toshiba Corp , 株式会社東芝
发明人： OBATA SUSUMU , KOMATSU IZURU , IGUCHI TOMOHIRO , KITANI TOMOYUKI , HIRAHARA MASAKO , UKITA YASUNARI , HIGUCHI KAZUTO
IPC分类号： H01L21/60 , H01L23/48
CPC分类号： H01L23/49562 , H01L23/3135 , H01L23/49524 , H01L24/18 , H01L24/24 , H01L24/40 , H01L24/82 , H01L24/84 , H01L2224/18 , H01L2224/24246 , H01L2224/32245 , H01L2224/73267 , H01L2224/82039 , H01L2224/8485 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/181 , H01L2924/19043 , H01L2924/3512 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device and its manufacturing method, which can be easily manufactured and whose internal resistance can be made further lower. SOLUTION: The semiconductor device comprises: a semiconductor element 3; a lead 4 having an electrode connected to an electrode provided on the semiconductor element 3; and a metal film 6 for electrically connecting the electrode of the semiconductor element 3 and the electrode of the lead 4. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供可以容易地制造并且可以进一步降低其内阻的高度可靠的半导体器件及其制造方法。解决方案：半导体器件包括：半导体元件3; 具有连接到设置在半导体元件3上的电极的电极的引线4; 以及用于将半导体元件3的电极和引线4的电极电连接的金属膜6.版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2008028112A Manufacturing method for semiconductor device 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：JP2008028112A
公开(公告)日：2008-02-07
申请号：JP2006198429
申请日：2006-07-20
申请人： Toshiba Corp , 株式会社東芝
发明人： TOGASAKI TAKASHI , HIGUCHI KAZUTO , UCHIDA MASAYUKI , ITO HISASHI
IPC分类号： H01L21/60
CPC分类号： H01L2224/0361 , H01L2224/03912 , H01L2224/11 , H01L2224/1147
摘要： PROBLEM TO BE SOLVED: To provide a fine and highly reliable semiconductor device manufacturing method by reducing the undercut of a UBM film under a bump electrode. SOLUTION: The method includes: a process for forming a first opening H to communicate with an external terminal 5 in passivation films 6 covering the external terminal 5 on a substrate, and forming underbump metal films 7 on the passivation films 6 by contact with the external terminal 5 via the first opening H; a process for forming a resist 9 to form a second opening I on the external terminal 5 and on the underbump metal films 7; a process for forming a soldering film 10 to be the bump electrode 8 in the second opening I; a process for removing the resist 9; an oxidizing process for oxidizing the underbump metal films 7 with the soldering film 10 as a mask; and an etching process for removing the oxidized region in the underbump metal film 7 by etching. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过减少凸起电极下面的UBM膜的底切来提供精细且高度可靠的半导体器件制造方法。解决方案：该方法包括：形成第一开口H以与覆盖基板上的外部端子5的钝化膜6中的外部端子5连通的工艺，以及通过接触在钝化膜6上形成下凸块金属膜7 外部端子5经由第一开口H; 形成抗蚀剂9以在外部端子5和下凸块金属膜7上形成第二开口I的工艺; 在第二开口I中形成作为凸块电极8的焊接膜10的工序; 去除抗蚀剂9的方法; 利用焊接膜10作为掩模氧化底部金属膜7的氧化工艺; 以及通过蚀刻去除下凸块金属膜7中的氧化区域的蚀刻工艺。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2005026419A Semiconductor radiation detector and diagnostic imaging device using the same 审中-公开
标题翻译：半导体辐射探测器及其诊断成像装置
公开(公告)号：JP2005026419A
公开(公告)日：2005-01-27
申请号：JP2003189667
申请日：2003-07-01
申请人： Toshiba Corp , 株式会社東芝
发明人： SUGA KENTARO , HIGUCHI KAZUTO , MIYAGI TAKESHI , SHUDO KEISEI
IPC分类号： G01T1/24 , H01L27/14 , H01L31/09 , H04N5/32
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor radiation detector for improving resolution by placing a plurality of semiconductor devices with no gaps therebetween, and to provide a diagnostic imaging device using the same.
SOLUTION: The detector comprises the plurality of semiconductor devices 13 having a property of producing charges with the irradiation of radiant ray which are juxtaposed in a planar direction with nearly no gaps therebetween, provided with reference electrodes 14, respectively, on surfaces on which the irradiation is incident, and provided with charge collecting electrodes 15, respectively, on the rear; and a plurality of wirings 25 which allow the reference electrodes 14 to have the same electric potential by electrically connecting the reference electrodes 14.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种半导体辐射检测器，用于通过放置其间没有间隙的多个半导体器件来提高分辨率，并提供使用该半导体辐射检测器的诊断成像装置。解决方案：检测器包括多个半导体器件13，其具有产生电荷的辐射线的辐射的特性，辐射线的辐射在平面方向上几乎没有间隙并置，其上分别设置有参考电极14，照射入射，分别在后方设置有电荷收集电极15; 以及多个布线25，其允许参考电极14通过电连接参考电极14而具有相同的电位。版权所有（C）2005，JPO和NCIPI

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