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1. 发明专利

JP2014150196A Semiconductor light-emitting device and method of manufacturing the same 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：JP2014150196A
公开(公告)日：2014-08-21
申请号：JP2013018955
申请日：2013-02-01
申请人： Toshiba Corp , 株式会社東芝
发明人： TOMIZAWA HIDEYUKI , KOJIMA AKIHIRO , SHIMADA MIYOKO , AKIMOTO YOSUKE , SUGIZAKI YOSHIAKI , FURUYAMA HIDETO
IPC分类号： H01L33/02 , H01L33/50
CPC分类号： H01L33/62 , H01L24/24 , H01L24/29 , H01L24/32 , H01L24/82 , H01L24/83 , H01L24/92 , H01L24/97 , H01L33/0079 , H01L33/486 , H01L33/54 , H01L2224/13 , H01L2224/24225 , H01L2224/29011 , H01L2224/2919 , H01L2224/32225 , H01L2224/82106 , H01L2224/83192 , H01L2224/83856 , H01L2224/9202 , H01L2224/92144 , H01L2224/97 , H01L2224/83 , H01L2924/0665 , H01L2224/82
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device that allows preventing the warpage of a wafer after removing a substrate, and to provide a method of manufacturing the same.SOLUTION: A semiconductor light-emitting device includes: a semiconductor layer; a p-side electrode and an n-side electrode provided on the semiconductor layer; a p-side wiring layer electrically connected to the p-side electrode; and an n-side wiring layer electrically connected to the n-side electrode. The semiconductor light-emitting device further includes a supporting substrate having: a third surface facing the semiconductor layer, the p-side wiring layer, and the n-side wiring layer; and a fourth surface located on the opposite side of the third surface. A junction layer is provided between the p-side wiring layer and the supporting substrate and between the n-side wiring layer and the supporting substrate, and the supporting substrate has a first opening in communication with the p-side wiring layer and a second opening in communication with the n-side wiring layer. The semiconductor light-emitting device further includes a p-side terminal electrically connected to the p-side wiring layer and an n-side terminal electrically connected to the n-side wiring layer.
摘要翻译：要解决的问题：提供一种半导体发光器件，其能够防止在去除衬底之后晶片的翘曲，并提供其制造方法。半导体发光器件包括：半导体层; 设置在半导体层上的p侧电极和n侧电极; 电连接到p侧电极的p侧布线层; 以及与n侧电极电连接的n侧配线层。所述半导体发光元件还包括：支撑基板，具有：与所述半导体层相对的第三面，所述p侧配线层和所述n侧配线层; 以及位于所述第三表面的相对侧上的第四表面。在p侧布线层和支撑基板之间以及n侧布线层和支撑基板之间设置有接合层，并且支撑基板具有与p侧布线层连通的第一开口和第二开口与n侧布线层连通。半导体发光器件还包括电连接到p侧布线层的p侧端子和与n侧布线层电连接的n侧端子。

2. 发明专利

JP2013239730A Optical semiconductor device 有权
标题翻译：光学半导体器件
公开(公告)号：JP2013239730A
公开(公告)日：2013-11-28
申请号：JP2013147204
申请日：2013-07-16
申请人： Toshiba Corp , 株式会社東芝
发明人： KOIZUMI HIROSHI , OKADA YASUHIDE , OBATA SUSUMU , NAKA TOMOMICHI , HIGUCHI KAZUTO , SHIMOKAWA KAZUO , SUGIZAKI YOSHIAKI , KOJIMA AKIHIRO
IPC分类号： H01L33/50 , H01L33/54
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device which enables the mass production at low costs and also enables the downsizing at the same level as a semiconductor light emitting element.SOLUTION: An optical semiconductor device includes: a light emitting layer 2 including a semiconductor lamination body separated from a growth substrate; first and second electrodes 7a, 7b formed on a second main surface of the light emitting layer; a translucent layer 5 provided on a first main surface; a fluorescent layer provided on the translucent layer; first and second metal posts 8a, 8b provided on the first and second electrodes; and a sealing layer 10 which is provided on the second main surface and is made of a material shielding light emitted from the light emitting layer, the sealing layer sealing the first and second metal posts and covering a side surface of the light emitting layer. A side surface of the translucent layer has a portion that is not covered by the fluorescent layer and the sealing layer. A part of the light emitted from the light emitting layer penetrates the translucent layer and is subject to wavelength conversion in the fluorescent layer to be emitted to the exterior. The other part of the light emitted from the light emitting layer penetrates the translucent layer to be emitted to the exterior from the side surface of the translucent layer.
摘要翻译：要解决的问题：提供一种能够以低成本进行批量生产并且还能够使与半导体发光元件处于相同水平的小型化的光学半导体器件。解决方案：一种光学半导体器件包括：发光层2，包括：半导体层叠体与生长衬底分离; 形成在发光层的第二主表面上的第一和第二电极7a，7b; 设置在第一主表面上的半透明层5; 设置在所述半透明层上的荧光层; 设置在第一和第二电极上的第一和第二金属柱8a，8b; 以及密封层10，其设置在第二主表面上并且由屏蔽从发光层发射的光的材料制成，密封层密封第一和第二金属柱并覆盖发光层的侧表面。半透明层的侧面具有不被荧光层和密封层覆盖的部分。从发光层发射的光的一部分穿透半透明层并在荧光层中进行波长转换以发射到外部。从发光层发射的光的另一部分透过半透明层，从半透明层的侧面发射到外部。

3. 发明专利

JP2013232479A Semiconductor light-emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：JP2013232479A
公开(公告)日：2013-11-14
申请号：JP2012103040
申请日：2012-04-27
申请人： Toshiba Corp , 株式会社東芝
发明人： FURUYAMA HIDETO , AKIMOTO YOSUKE , SHIMADA MIYOKO , KOJIMA AKIHIRO , SUGIZAKI YOSHIAKI
IPC分类号： H01L33/50 , H01L33/08
CPC分类号： H01L33/504 , H01L24/97 , H01L33/46 , H01L33/501 , H01L33/52 , H01L33/60 , H01L33/62 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2933/0091 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a high-efficiency semiconductor light-emitting device with less chromaticity unevenness at a low cost.SOLUTION: According to an embodiment, a semiconductor light-emitting device comprises: a light-emitting element emitting excitation light; a phosphor layer provided on the light-emitting element; and a fluorescence reflection film provided between the light-emitting element and the phosphor layer, and having a higher reflective index to a fluorescent wavelength of the phosphor than a reflective index to a wavelength of the excitation light. The phosphor layer comprises: a transparent medium; a phosphor dispersed into the transparent medium, and excited by the excitation light to emit fluorescence light; and a particle dispersed into the transparent medium, and having a size of 1/10 or less of the wavelength of the excitation light, and a refractive index different from that of the transparent medium.
摘要翻译：要解决的问题：以低成本提供具有较少色度不均匀性的高效半导体发光器件。解决方案：根据实施例，半导体发光器件包括：发射激发光的发光元件; 设置在发光元件上的荧光体层; 以及设置在发光元件和荧光体层之间的荧光反射膜，并且对于荧光体的荧光波长具有比对于激发光的波长的反射率更高的反射率。荧光体层包括：透明介质; 荧光体分散在透明介质中，并被激发光激发，发出荧光; 和分散在透明介质中的粒子，其尺寸为激发光的波长的1/10以下，折射率不同于透明介质的折射率。

4. 发明专利

JP2013197309A Light-emitting device 审中-公开
标题翻译：发光装置
公开(公告)号：JP2013197309A
公开(公告)日：2013-09-30
申请号：JP2012062816
申请日：2012-03-19
申请人： Toshiba Corp , 株式会社東芝
发明人： AKIMOTO YOSUKE , KOJIMA AKIHIRO , SUGIZAKI YOSHIAKI , FURUYAMA HIDETO , SHIMADA MIYOKO
IPC分类号： H01L33/58
CPC分类号： H01L33/58 , H01L33/005 , H01L33/22 , H01L33/486 , H01L33/50 , H01L33/505 , H01L33/60 , H01L33/62 , H01L2924/0002 , H01L2933/0058 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device the light distribution characteristics of which can be changed.SOLUTION: The light-emitting device includes a light-emitting element having a first surface to emit light, a translucent part provided on the first surface, and a light distribution control part provided on the periphery of the first surface and having a refractive index lower than that of the translucent part. The light distribution control part has light transmissivity.
摘要翻译：要解决的问题：提供一种其配光特性可以改变的发光装置。解决方案：发光装置包括具有发光的第一表面的发光元件，设置在第一表面和设置在第一表面的周边上并且具有比半透明部分的折射率低的折射率的配光控制部分。配光控制部具有透光性。

5. 发明专利

JP2013123008A Semiconductor light-emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：JP2013123008A
公开(公告)日：2013-06-20
申请号：JP2011271399
申请日：2011-12-12
申请人： Toshiba Corp , 株式会社東芝
发明人： KOJIMA AKIHIRO , FURUYAMA HIDETO , SHIMADA MIYOKO , AKIMOTO YOSUKE
IPC分类号： H01L33/32 , H01L33/38
CPC分类号： H01L33/62 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/46
摘要： PROBLEM TO BE SOLVED: To achieve both high reflectivity and low contact resistance of a p-side electrode of a semiconductor light-emitting device.SOLUTION: A semiconductor light-emitting device 1 includes a semiconductor layer 15 having a light-emitting layer 12a, and a p-side electrode 14 and an n-side electrode 22 provided on the semiconductor layer. The p-side electrode has: a plurality of contact metals 18 that are selectively provided on the semiconductor layer so as to be in contact with the a second surface of the semiconductor layer; a transparent film 19 that is provided on the semiconductor layer so as to be in contact with the second surface between the plurality of contact metals and has a higher transmissivity to light emitted from the light-emitting layer than the contact metals; and a reflection metal 20 that is provided on the contact metals and the transparent film so as to be in contact with the contact metals, and contains silver. The area of the reflection metal on the light-emitting layer side is larger than the total sum of the areas in which the plurality of contact metals are in contact with the semiconductor layer.
摘要翻译：要解决的问题：为了实现半导体发光器件的p侧电极的高反射率和低接触电阻。解决方案：半导体发光器件1包括具有发光层12a的半导体层15和设置在半导体层上的p侧电极14和n侧电极22。 p侧电极具有：多个接触金属18，其被选择性地设置在半导体层上以与半导体层的第二表面接触; 透明膜19设置在半导体层上以与多个接触金属之间的第二表面接触并且具有比接触金属从发光层发射的光更高的透射率; 以及设置在接触金属和透明膜上以与接触金属接触并包含银的反射金属20。发光层侧的反射金属的面积大于多个接触金属与半导体层接触的面积的总和。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2013042191A Semiconductor light-emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：JP2013042191A
公开(公告)日：2013-02-28
申请号：JP2012263232
申请日：2012-11-30
申请人： Toshiba Corp , 株式会社東芝
发明人： SUGIZAKI YOSHIAKI , KOJIMA AKIHIRO , OBATA SUSUMU
IPC分类号： H01L33/48 , H01L33/52 , H01L33/62
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device capable of obtaining suitable color tone.SOLUTION: A semiconductor light-emitting device comprises: a semiconductor layer that does not include a substrata, but includes a light-emitting layer, and has a first primary surface and a second primary surface located on the opposite side of the first primary surface; an n-side electrode and a p-side electrode that are provided in the semiconductor layer; an n-side wiring layer that is connected to the n-side electrode; a p-side wiring layer that is connected to the p-side electrode; resin that is provided between the n-side wiring layer and the p-side wiring layer so as to contact the n-side wiring layer and the p-side wiring layer; a light-shielding material that is provided outside the semiconductor layer.
摘要翻译：解决的问题：提供能够获得合适的色调的半导体发光装置。解决方案：半导体发光器件包括：半导体层，其不包括基底，但包括发光层，并且具有第一主表面和第二主表面，所述第一主表面和第二主表面位于第一主表面设置在所述半导体层中的n侧电极和p侧电极; 与n侧电极连接的n侧配线层; 与p侧电极连接的p侧配线层; 树脂，其设置在n侧布线层和p侧布线层之间以与n侧布线层和p侧布线层接触; 设置在半导体层外侧的遮光材料。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2012243849A Semiconductor light-emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：JP2012243849A
公开(公告)日：2012-12-10
申请号：JP2011110372
申请日：2011-05-17
申请人： Toshiba Corp , 株式会社東芝
发明人： KOJIMA AKIHIRO , FUJII TAKAYOSHI , AKIMOTO YOSUKE , SUGIZAKI YOSHIAKI , SHIMOJUKU YUKI
IPC分类号： H01L33/38 , H01L33/64
CPC分类号： H01L33/36 , H01L33/38 , H01L33/44 , H01L33/502 , H01L33/62 , H01L2224/16225
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device with excellent heat dissipation and excellent reliability.SOLUTION: A semiconductor light-emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, an inorganic insulating film, a p-side wiring portion, an n-side wiring portion, and an organic insulating film. The inorganic insulating film is provided on a second surface side of the semiconductor layer and has a first via communicating with the p-side electrode and a second via communicating with the n-side electrode. The p-side wiring portion and the n-side wiring portion are provided on the inorganic insulating film. The organic insulating film is provided at least between the p-side wiring portion and the n-side wiring portion on the inorganic insulating film. An end of the p-side wiring portion at the n-side wiring portion side and an end of the n-side wiring portion at the p-side wiring portion side are on the organic insulating film.
摘要翻译：要解决的问题：提供具有优异的散热性和优异的可靠性的半导体发光器件。解决方案：半导体发光器件包括半导体层，p侧电极，n侧电极，无机绝缘膜，p侧布线部分，n侧布线部分和有机物绝缘膜。无机绝缘膜设置在半导体层的第二表面侧，并且具有与p侧电极连通的第一通路和与n侧电极连通的第二通路。 p侧配线部和n侧配线部设置在无机绝缘膜上。至少在无机绝缘膜上的p侧配线部和n侧配线部之间设置有机绝缘膜。 n侧配线部侧的p侧配线部的端部和p侧配线部侧的n侧配线部的端部在有机绝缘膜上。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2012212871A Semiconductor light-emitting device and method of manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：JP2012212871A
公开(公告)日：2012-11-01
申请号：JP2012052247
申请日：2012-03-08
申请人： Toshiba Corp , 株式会社東芝
发明人： OBATA SUSUMU , HIGUCHI KAZUTO , NISHIUCHI HIDEO , KIMURA AKIYA , NAKAYAMA TOSHIYA , SUGIZAKI YOSHIAKI , KOJIMA AKIHIRO , AKIMOTO YOSUKE
IPC分类号： H01L33/38
CPC分类号： H01L33/62 , H01L33/486 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device that has a small size and high convenience and can improve the manufacturing yield, and to provide a method of manufacturing the same.SOLUTION: A semiconductor light-emitting device comprises: a stack including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer; a first wiring layer connected to the first semiconductor layer; a second wiring layer connected to the second semiconductor layer; a first pillar connected to the first wiring layer; a second pillar connected to the second wiring layer; and an insulating layer covering the first wiring layer, the second wiring layer, the first pillar, and the second pillar. The first pillar has a first monitor pad exposed on a surface of the insulating layer, and the first wiring layer has a first bonding pad exposed on a side surface of the insulating layer. The second pillar has a second monitor pad exposed on the surface of the insulating layer, and the second wiring layer has a second bonding pad exposed on the side surface of the insulating layer.
摘要翻译：解决的问题：提供一种尺寸小，便利性高，可以提高制造成品率的半导体发光装置，并提供其制造方法。解决方案：半导体发光器件包括：包括第一半导体层，第二半导体层和发光层的堆叠; 连接到第一半导体层的第一布线层; 连接到第二半导体层的第二布线层; 连接到第一布线层的第一柱; 连接到第二布线层的第二柱; 以及覆盖所述第一布线层，所述第二布线层，所述第一柱和所述第二柱的绝缘层。第一支柱具有暴露在绝缘层的表面上的第一监视器焊盘，并且第一布线层具有暴露在绝缘层的侧表面上的第一焊盘。第二支柱具有暴露在绝缘层的表面上的第二监视器焊盘，第二布线层具有暴露在绝缘层的侧表面上的第二焊盘。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2011258667A Semiconductor light-emitting device and method for producing the sane 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：JP2011258667A
公开(公告)日：2011-12-22
申请号：JP2010130481
申请日：2010-06-07
申请人： Toshiba Corp , 株式会社東芝
发明人： AKIMOTO YOSUKE , KOJIMA AKIHIRO , SUGIZAKI YOSHIAKI , IZUKA MIYUKI
IPC分类号： H01L33/32
CPC分类号： H01L33/62 , H01L27/153 , H01L33/0079 , H01L33/486 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device excellent in mass producibility and miniaturization, and to provide a method for producing the same.SOLUTION: The semiconductor light-emitting device comprises: a semiconductor layer; a first electrode; a second electrode; a first insulating layer; a first wiring layer; a second wiring layer; a first metal pillar; a second metal pillar; and a second insulating layer. The semiconductor layer includes a first principal surface, a second principal surface formed opposite to the first principal surface, and a light-emitting layer. An end surface of a part of the first wiring layer is exposed from the first insulating layer or second insulating layer in a side direction, and all end surfaces of the second wiring layer are covered with the first insulating layer or the second insulating layer.
摘要翻译：解决的问题：为了提供大规模生产性和小型化优异的半导体发光装置，并提供其制造方法。解决方案：半导体发光器件包括：半导体层; 第一电极; 第二电极; 第一绝缘层; 第一布线层; 第二布线层; 第一金属柱; 第二个金属支柱; 和第二绝缘层。半导体层包括第一主表面，与第一主表面相对形成的第二主表面和发光层。第一布线层的一部分的端面在侧方向从第一绝缘层或第二绝缘层露出，第二布线层的所有端面被第一绝缘层或第二绝缘层覆盖。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2011253925A Method of manufacturing light-emitting device 审中-公开
标题翻译：制造发光装置的方法
公开(公告)号：JP2011253925A
公开(公告)日：2011-12-15
申请号：JP2010126575
申请日：2010-06-02
申请人： Toshiba Corp , 株式会社東芝
发明人： KOJIMA AKIHIRO , SUGIZAKI YOSHIAKI , OBATA SUSUMU , NISHIUCHI HIDEO
IPC分类号： H01L33/48
CPC分类号： H01L33/0079 , H01L33/0075 , H01L33/486 , H01L2224/16 , H01L2933/0066
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a light-emitting device having excellent mass productivity, without complication of a manufacturing process.SOLUTION: The method of manufacturing a light-emitting device comprises: a step (S110) of laminating a semiconductor layer having a light-emitting layer on a substrate 10 to form a first structure; a step (S120) forming a first electrode and a second electrode on the semiconductor layer; a step (S130) of forming a first metal pillar conducting to the first electrode and a second metal pillar conducting to the second electrode on the semiconductor layer; a step (S140) of filling a resin between the first metal pillar and the second metal pillar; and a step (S150) of removing the substrate from the semiconductor layer supported with the resin, thereby forming a second structure with a convex shape on the opposite side of the resin.
摘要翻译：要解决的问题：提供一种制造具有优异的批量生产率的发光装置的方法，而不需要制造过程的复杂性。解决方案：制造发光器件的方法包括：在衬底10上层叠具有发光层的半导体层以形成第一结构的步骤（S110）; 在所述半导体层上形成第一电极和第二电极的工序（S120）形成向所述第一电极导通的第一金属柱的步骤（S130）和在所述半导体层上向所述第二电极导通的第二金属柱; 在第一金属柱和第二金属柱之间填充树脂的台阶（S140）以及从由树脂支撑的半导体层去除衬底的步骤（S150），从而在树脂的相对侧上形成具有凸形的第二结构。版权所有（C）2012，JPO＆INPIT

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