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1. 发明专利

JP2012160576A Semiconductor device and manufacturing method of the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2012160576A
公开(公告)日：2012-08-23
申请号：JP2011019271
申请日：2011-01-31
申请人： Toshiba Corp , 株式会社東芝
发明人： IGUCHI TOMOHIRO , FUKUMITSU MASAKO , HONDA SATOSHI , HONDA TOMOKO , YAMAMOTO KAZUICHI
IPC分类号： H01L23/28 , H01L23/00 , H05K9/00
CPC分类号： H01L23/552 , H01L24/73 , H01L24/97 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/97 , H01L2924/15311 , H01L2924/1815 , H01L2924/19107 , H01L2224/83 , H01L2224/85 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which improves design flexibility of electric wiring.SOLUTION: A semiconductor device according to the embodiment includes: a circuit board having an insulation substrate, multiple wiring lines forming a first wiring layer provided at the upper surface side of the insulation substrate, multiple wiring lines forming a second wiring layer provided at the lower surface side of the insulation substrate, and multiple vias penetrating from an upper surface to a lower surface of the insulation substrate; a semiconductor element mounted on an upper surface of the circuit board; and a sealing resin layer sealing the semiconductor element and provided at the upper surface of the circuit board. Further, the semiconductor device includes: a conductive shield layer covering an upper surface of the sealing resin layer and a part of a side surface of the sealing resin layer; and a conductive member electrically connecting the conductive shield layer covering the part of the side surface of the sealing resin layer with at least one of the multiple wiring lines forming the first wiring layer.
摘要翻译：要解决的问题：提供一种提高电布线设计灵活性的半导体器件。解决方案：根据实施例的半导体器件包括：具有绝缘基板的电路板，形成设置在绝缘基板的上表面侧的第一布线层的多条布线，形成设置有第二布线层的多条布线在所述绝缘基板的下表面侧，从所述绝缘基板的上表面贯穿到所述绝缘基板的下表面的多个通孔; 安装在所述电路板的上表面上的半导体元件; 以及密封树脂层，密封半导体元件并设置在电路板的上表面。此外，半导体器件包括：覆盖密封树脂层的上表面和密封树脂层的侧表面的一部分的导电屏蔽层; 以及导电构件，其将覆盖所述密封树脂层的侧面的所述一部分的所述导电性屏蔽层与形成所述第一布线层的所述多条布线中的至少一方电连接。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2011159761A Surface mounting diode and method of manufacturing the same 有权
标题翻译：表面安装二极管及其制造方法
公开(公告)号：JP2011159761A
公开(公告)日：2011-08-18
申请号：JP2010019681
申请日：2010-01-29
申请人： Toshiba Corp , 株式会社東芝
发明人： KITANI TOMOYUKI , TOJO HIROSHI , ATAGI TAKAO , HIGUCHI KAZUTO , IGUCHI TOMOHIRO , FUKUMITSU MASAKO , OBATA SUSUMU , ASANO YUSAKU
IPC分类号： H01L21/329 , H01L23/48 , H01L29/861
CPC分类号： H01L21/782 , H01L23/48 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device, the polarities of which can be identified easily by appearance without causing tombstone, and to provide a method of manufacturing the semiconductor device. SOLUTION: A surface mounting diode includes: a diode chip 2 having a first main surface A1 and a second main surface A2 that face with each other; a cathode electrode 3 having an internal electrode part 3a provided on the first main surface A1 and an external electrode part 3b provided on a surface of the internal electrode part 3a; an anode electrode 4 having an internal electrode part 4a provided on a surface of the second main surface A2 and an external electrode part 4b provided on a surface of the internal electrode part 4a, wherein a thickness of the external electrode part 4b is the same as that of the external electrode part 3b of the cathode electrode; a first coating member 5 coating a peripheral surface of the internal electrode part 3a of one of either the cathode electrode and the anode electrode and a peripheral surface of the diode chip 2; and a second coating member 6 coating a peripheral surface of the internal electrode part 4a of the other of the cathode electrode and the anode electrode and having a color different from that of the first coating member 5. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以通过外观容易地识别其极性而不产生墓碑的半导体器件，并提供一种半导体器件的制造方法。解决方案：表面安装二极管包括：具有彼此面对的第一主表面A1和第二主表面A2的二极管芯片2; 设置在第一主面A1上的内部电极部分3a和设置在内部电极部分3a的表面上的外部电极部分3b的阴极电极3; 设置在第二主面A2的表面上的内部电极部分4a和设置在内部电极部分4a的表面上的外部电极部分4b的阳极电极4，其中外部电极部分4b的厚度与阴极电极的外部电极部分3b; 涂覆阴极电极和阳极电极之一的内部电极部分3a的外周表面和二极管芯片2的外围表面的第一涂覆部件5; 以及第二涂覆部件6，其涂覆阴极电极和阳极电极中的另一个的内部电极部分4a的周面，并且具有与第一涂覆部件5不同的颜色。版权所有（C）2011 ，JPO＆INPIT

3. 发明专利

JP2007081386A Semiconductor light-emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2007081386A
公开(公告)日：2007-03-29
申请号：JP2006221044
申请日：2006-08-14
申请人： Toshiba Corp , 株式会社東芝
发明人： FUJII TAKAYOSHI , TONOTANI JUNICHI , KOMATSU TETSUO , SOGO TAKAHIRO , IGUCHI TOMOHIRO
IPC分类号： H01L33/30 , H01L33/38 , H01L33/46
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element capable of emitting light with high light-emitting efficiency by decreasing a proportion of trapped light in a chip by total reflection of emitted light, or absorbed light by an electrode facing the element. SOLUTION: The semiconductor light-emitting element is provided with a GaP substrate 11 having a column shape which has a tapered portion 11a formed on an outer wall surface and which narrows toward an upper bottom surface side, an upper surface electrode 14 prepared on the upper bottom surface of the GaP substrate 11, a light-emitting layer 12 prepared on a lower bottom surface of the GaP substrate 11, and a lower surface electrode 13 prepared on a surface of the light-emitting layer 12 of an opposite side to the GaP substrate 11 and arranged in an annular region outside of a region facing the upper surface electrode 14. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体发光元件，其能够通过通过发射光的全反射减少芯片中的俘获光的比例或通过面对电极的吸收光来发射具有高发光效率的光元素。解决方案：半导体发光元件设置有具有柱形状的GaP基板11，其具有形成在外壁表面上并且朝向上底面侧变窄的锥形部分11a，准备的上表面电极14 在GaP基板11的上底面上形成有在GaP基板11的下表面上制备的发光层12和在相对侧的发光层12的表面上制备的下表面电极13 并且布置在面向上表面电极14的区域外的环形区域中。（C）2007，JPO＆INPIT

4. 发明专利

JP2006054390A Method for manufacturing wafer and method for manufacturing semiconductor device 审中-公开
标题翻译：制造方法和制造半导体器件的方法
公开(公告)号：JP2006054390A
公开(公告)日：2006-02-23
申请号：JP2004236548
申请日：2004-08-16
申请人： Toshiba Corp , 株式会社東芝
发明人： IGUCHI TOMOHIRO , SUGA KENTARO , TOMIOKA TAIZO
IPC分类号： H01L21/304 , H01L21/60
CPC分类号： H01L21/304 , H01L21/30604 , H01L24/75 , H01L24/81 , H01L2224/73204 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device for performing stable and satisfactory junction by ultrasonic combined thermal press-fitting. SOLUTION: The back face of a wafer is ground, and wet etching is carried out, and when a chip is joined to a junction object body using ultrasonic waves, surface roughness along the vibrating direction of ultrasonic waves is made substantially the same between chips, and ultrasonic wave combined thermal press-fitting is carried out, and the chip is joined through a golden ball bump to a lead frame. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于通过超声波组合热压配合来实现稳定和令人满意的接合的半导体器件的制造方法。解决方案：研磨晶片的背面，进行湿式蚀刻，当使用超声波将芯片接合到接合体时，沿着超声波的振动方向的表面粗糙度基本相同在芯片之间进行超声波组合热压配合，并且芯片通过金球凸块连接到引线框架。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2014179547A Semiconductor module and method of manufacturing the same 审中-公开
标题翻译：半导体模块及其制造方法
公开(公告)号：JP2014179547A
公开(公告)日：2014-09-25
申请号：JP2013053873
申请日：2013-03-15
申请人： Toshiba Corp , 株式会社東芝
发明人： IGUCHI TOMOHIRO , UCHIDA MASAYUKI , HIRATSUKA DAISUKE , FUKUMITSU MASAKO
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L21/8232 , H01L22/32 , H01L23/053 , H01L23/3735 , H01L23/49811 , H01L24/06 , H01L24/48 , H01L24/49 , H01L25/072 , H01L25/18 , H01L2224/04042 , H01L2224/0603 , H01L2224/45014 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/48472 , H01L2224/4903 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/13091 , H01L2924/19107 , H01L2924/351 , H01L2924/00 , H01L2224/45099
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor module with high productivity and a method of manufacturing the same.SOLUTION: There is provided a semiconductor module including a first circuit component, a second circuit component, and a third circuit component. The first circuit component includes a first switching element and a first diode. The second circuit component includes a second switching element and a second diode. The second circuit component is spaced apart from the first circuit component in a second direction crossing a first direction toward the first diode from the first switching element. The direction toward the second diode from the second switching element is the same direction as the first direction. The second circuit component is disposed between the first circuit component and the third circuit component. The third circuit component includes a third switching element and a third diode. The direction toward the third diode from the third switching element is the opposite direction to the first direction.
摘要翻译：要解决的问题：提供高生产率的半导体模块及其制造方法。解决方案：提供一种包括第一电路部件，第二电路部件和第三电路部件的半导体模块。第一电路部件包括第一开关元件和第一二极管。第二电路部件包括第二开关元件和第二二极管。第二电路部件在与第一开关元件相反的第一方向与第一二极管交叉的第二方向上与第一电路部件间隔开。从第二开关元件朝向第二二极管的方向与第一方向相同。第二电路部件设置在第一电路部件和第三电路部件之间。第三电路部件包括第三开关元件和第三二极管。从第三开关元件朝向第三二极管的方向是与第一方向相反的方向。

6. 发明专利

JP2010225951A Semiconductor device and method of manufacturing semiconductor device 审中-公开
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：JP2010225951A
公开(公告)日：2010-10-07
申请号：JP2009073047
申请日：2009-03-25
申请人： Toshiba Corp , 株式会社東芝
发明人： NISHIUCHI HIDEO , HIGUCHI KAZUTO , KITANI TOMOYUKI , IGUCHI TOMOHIRO , FUKUMITSU MASAKO , TOJO HIROSHI , KATO KYOKO
IPC分类号： H01L23/12 , H01L21/3205 , H01L23/52
CPC分类号： H01L24/97 , H01L2224/13
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which has high insulation performance and high strength while maintaining such an effect as the miniaturization of the device, more reduction in the resistance of an internal resistance, manufacturing at low cost, and improvement in manufacturing efficiency, and a method of manufacturing the semiconductor device. SOLUTION: The device has a substrate 2 in which a source electrode S and a gate electrode G are prepared in a first surface S1, and a drain electrode D is prepared in a second surface S2, a first wiring layer 3 which is connected to the source electrode S prepared on the first surface S1, a second wiring layer 4 which is prepared on the first surface S1, and connected to the drain electrode D, copper posts 5 prepared on the first wiring layer 3 and on the second wiring layer 4, respectively, a third wiring layer 6 which is connected to the drain electrode D prepared on the second surface S2, a through-hole 7 which penetrates the substrate 2, and establishes conduction between the second wiring layer 4 and the third wiring layer 6, and an enclosure 9 in which only a first facing surface and a second facing surface of the copper post 5 are exposed, and the first wiring layer 3, the second wiring layer 4, the third wiring layer 6 and the substrate 2 are sealed. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种具有高绝缘性能和高强度的半导体器件，同时保持了器件的小型化的效果，内阻的电阻更多的降低，低成本的制造和改进的制造效率，以及半导体装置的制造方法。解决方案：器件具有在第一表面S1中制备源电极S和栅极电极G的衬底2，并且在第二表面S2中制备漏电极D，第一布线层3 连接到在第一表面S1上制备的源电极S，制备在第一表面S1上并连接到漏电极D的第二布线层4，在第一布线层3上准备的铜柱5和第二布线层4分别连接到在第二表面S2上制备的漏电极D的第三布线层6，穿透基板2的通孔7，并且在第二布线层4和第三布线层之间建立导通 6以及仅露出铜柱5的第一面对面和第二面对面的壳体9，并且第一配线层3，第二配线层4，第三配线层6和基板2被密封。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2010135678A Optical semiconductor device and method of manufacturing optical semiconductor device 有权
标题翻译：光学半导体器件及制造光学半导体器件的方法
公开(公告)号：JP2010135678A
公开(公告)日：2010-06-17
申请号：JP2008312149
申请日：2008-12-08
申请人： Toshiba Corp , 株式会社東芝
发明人： HAPPOYA AKIHIKO , HIGUCHI KAZUTO , IGUCHI TOMOHIRO , SHIMOKAWA KAZUO , KOBARIGAWA TAKASHI , INOUE MICHINOBU , KOMATSU IZURU , ITO HISASHI
IPC分类号： H01L33/48 , H01L21/56 , H01L23/28
CPC分类号： H01L33/62 , H01L33/483 , H01L33/54 , H01L33/60 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device which allows the manufacturing cost thereof to be reduced and the productivity thereof to be improved by decreasing the number of components and the number of processes for manufacture, and to provide a method of manufacturing the optical semiconductor device.
SOLUTION: The optical semiconductor device includes a light emitting element 5 which has a first electrode 5a1 disposed on a first surface 5a and a second electrode 5b1 disposed on a second surface 5b opposed to the first surface 5a, a first conductive member 6a connected to the first surface 5a, a second conductivity member 6b connected to the second surface 5b, a first external electrode 2a connected to the first conductive member 6a, a second external electrode 2b connected to the second conductive member 6b, and an enclosure 3 for sealing the light emitting element 5, the first conductive member 6a and second conductive member 6b between the first external electrode 2a and second electrode 2b and transmitting light from the light emitting element 5.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过减少部件数量和制造工艺数量来降低制造成本并提高其生产率的光半导体装置，并且提供一种方法制造光学半导体器件。解决方案：光学半导体器件包括：发光元件5，其具有设置在第一表面5a上的第一电极5a1和设置在与第一表面5a相对的第二表面5b上的第二电极5b1;第一导电部件6a 连接到第一表面5a，连接到第二表面5b的第二导电构件6b，连接到第一导电构件6a的第一外部电极2a，连接到第二导电构件6b的第二外部电极2b和用于将发光元件5，第一导电构件6a和第二导电构件6b密封在第一外部电极2a和第二电极2b之间并透射来自发光元件5的光。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2009295886A Semiconductor device and manufacturing method thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2009295886A
公开(公告)日：2009-12-17
申请号：JP2008149775
申请日：2008-06-06
申请人： Toshiba Corp , 株式会社東芝
发明人： IGUCHI TOMOHIRO , NISHIUCHI HIDEO , KITANI TOMOYUKI , AIZAWA TAKAHIRO , TOJO HIROSHI , OISHI MASAKO
IPC分类号： H01L21/60 , H01L23/48
CPC分类号： H01L2224/37 , H01L2224/371 , H01L2224/40 , H01L2224/40091 , H01L2224/40245 , H01L2224/73221 , H01L2224/77 , H01L2224/84 , H01L2224/84205 , H01L2924/01006 , H01L2924/01013 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device using a strap member, which can improve productivity and production efficiency while more reducing resistance of internal resistance, and to provide a manufacturing method of the semiconductor device. SOLUTION: The semiconductor device is equipped with: a semiconductor element 2; a lead 3 having an electrode to be connected to an electrode provided in the semiconductor element 2; metal wire W which electrically connects the electrode of the semiconductor element 2 with the electrode of the lead 3, and an area except an area joined to the semiconductor element 2 and an area joined to the lead 3 of the metal wire W is formed thinner than the area joined to the semiconductor element 2 and the area joined to the lead 3. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用带部件的半导体器件，其可以提高生产率和生产效率，同时更好地降低内部电阻的阻力，并提供半导体器件的制造方法。解决方案：半导体器件配备有：半导体元件2; 具有与设置在半导体元件2中的电极连接的电极的引线3; 将半导体元件2的电极与引线3的电极电连接的金属线W以及与半导体元件2接合的区域以外的区域和与金属线W的引线3连接的区域形成为比连接到半导体元件2的区域和连接到引线3的区域。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2009194154A Ultrasonic joining apparatus and method of manufacturing semiconductor device 审中-公开
标题翻译：超声波接合装置及制造半导体装置的方法
公开(公告)号：JP2009194154A
公开(公告)日：2009-08-27
申请号：JP2008033317
申请日：2008-02-14
申请人： Toshiba Corp , 株式会社東芝
发明人： NISHIUCHI HIDEO , IGUCHI TOMOHIRO , KITANI TOMOYUKI , AIZAWA TAKAHIRO , OISHI MASAKO , TOJO HIROSHI
IPC分类号： H01L21/607 , H01L21/60
CPC分类号： H01L2224/35 , H01L2224/37 , H01L2224/37124 , H01L2224/40 , H01L2224/40091 , H01L2224/40245 , H01L2224/48247 , H01L2224/73221 , H01L2224/77 , H01L2224/83801 , H01L2224/84 , H01L2224/84205 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide an ultrasonic joining apparatus for excellently joining a connection conductor to lead terminals, and to provide a method of manufacturing a semiconductor device. SOLUTION: The ultrasonic joining apparatus 30 is provided with: a stage block 31 having a plurality of islands 11 for allowing a semiconductor chip 10 to be mounted thereon and a plurality of elongated lead terminals 13, and allowing a lead frame to be mounted thereon; and a tool 34 for pressing one part of a plate-like or strip-like connection conductor 16 so that the part to abut on the lead terminals 13 in a state that the connection conductor 16 is disposed over an upper surface electrode 15 formed on the upper surface of the semiconductor chip 10 mounted on the island portions 11 and the lead terminals 13, and applying ultrasonic vibration to the connection conductor 16 in a plane crossing the pressing direction. Regulating protrusions 31a, 31b formed adjacently to the lead terminals 13 in a second direction and used to regulate vibration in the second direction of the lead terminals 13 at ultrasonic vibration are formed on the stage block 31. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于将连接导体与引线端子良好地接合的超声波接合装置，并且提供一种制造半导体器件的方法。解决方案：超声波接合装置30设置有：阶段块31，其具有用于允许半导体芯片10安装在其上的多个岛11和多个细长引线端子13，并且允许引线框架安装在其上; 以及用于按压板状或条状连接导体16的一部分的工具34，使得该部分在连接导体16设置在形成在上述上表面电极15上的状态下与引线端子13抵接安装在岛部11和引线端子13上的半导体芯片10的上表面，并且在与挤压方向交叉的平面中对连接导体16施加超声波振动。在阶段块31上形成有在第二方向上与引线端子13相邻形成并用于在超声波振动下调节引线端子13的第二方向的振动的调节突起31a，31b。（C）2009 ，JPO＆INPIT

10. 发明专利

JP2009071156A Semiconductor device and its manufacturing method 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2009071156A
公开(公告)日：2009-04-02
申请号：JP2007239558
申请日：2007-09-14
申请人： Toshiba Corp , 株式会社東芝
发明人： IGUCHI TOMOHIRO , NISHIUCHI HIDEO , HIGUCHI KAZUTO , KITANI TOMOYUKI
IPC分类号： H01L21/60
CPC分类号： H01L24/85 , H01L23/4952 , H01L23/49582 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/81 , H01L2224/0401 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/13099 , H01L2224/16 , H01L2224/16225 , H01L2224/291 , H01L2224/29339 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/4554 , H01L2224/456 , H01L2224/45647 , H01L2224/48091 , H01L2224/48225 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/48724 , H01L2224/48744 , H01L2224/48747 , H01L2224/73265 , H01L2224/81192 , H01L2224/81801 , H01L2224/85203 , H01L2224/85205 , H01L2224/85909 , H01L2224/8592 , H01L2224/92 , H01L2224/92247 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/181 , H01L2924/19043 , H01L2224/85 , H01L2224/78 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device and its manufacturing method, which can be easily manufactured and whose internal resistance can be made further lower without enlarging the size of the semiconductor device. SOLUTION: The semiconductor device comprises: a semiconductor element 2; a lead 3; and a wiring member 4 for electrically connecting an electrode 2a of the semiconductor element 2 and the lead 3. The wiring member 4 is covered with at least a material having conductivity. COPYRIGHT: (C)2009,JPO&INPIT

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