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81. 发明专利

JP2011044447A Surface-emitting laser 有权
标题翻译：表面发射激光
公开(公告)号：JP2011044447A
公开(公告)日：2011-03-03
申请号：JP2009189712
申请日：2009-08-19
申请人： Canon Inc , キヤノン株式会社
发明人： UCHIDA TAKESHI
IPC分类号： H01S5/183
CPC分类号： H01S5/18313 , B82Y20/00 , H01S5/0092 , H01S5/0207 , H01S5/0604 , H01S5/0683 , H01S5/105 , H01S5/18341 , H01S5/18388 , H01S5/34306
摘要： PROBLEM TO BE SOLVED: To provide a surface-emitting laser capable of monitoring a light quantity on a substrate side if a substrate serving as an absorption layer for an oscillation wavelength is used.
SOLUTION: The surface-emitting laser includes a plurality of semiconductor layers including an active layer laminated on a substrate and emits output light vertically to the substrate. It has a wavelength conversion layer between the substrate and a laser light oscillation part constituted of the plurality of semiconductor layers including the active layer. The wavelength conversion layer is structured to be capable of converting a first wavelength of laser light emitted from the laser light oscillation part into a second wavelength transmitting through the substrate.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：如果使用用作振荡波长的吸收层的衬底，则提供能够监测衬底侧的光量的表面发射激光器。解决方案：表面发射激光器包括多个半导体层，包括层叠在基板上的有源层，并且垂直于衬底发射输出光。在基板和由包括活性层的多个半导体层构成的激光振荡部分之间具有波长转换层。波长转换层被构造成能够将从激光振荡部发射的激光的第一波长转换为透过基板的第二波长。版权所有（C）2011，JPO＆INPIT

83. 发明专利

JP2010109015A Method of manufacturing semiconductor light-emitting element 审中-公开
标题翻译：制造半导体发光元件的方法
公开(公告)号：JP2010109015A
公开(公告)日：2010-05-13
申请号：JP2008277315
申请日：2008-10-28
申请人： Panasonic Corp , Panasonic Electric Works Co Ltd , パナソニック株式会社 , パナソニック電工株式会社
发明人： YAMAE KAZUYUKI , FUKUSHIMA HIROSHI , YASUDA MASAHARU , IWAHASHI TOMOYA , KAMEI HIDENORI , MAEDA SHUSAKU
IPC分类号： H01L33/32
CPC分类号： H01S5/0207 , H01L33/0079 , H01L33/0095 , H01L33/32 , H01S5/0201 , H01S5/0202 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/02492 , H01S5/32341
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light-emitting element for suppressing occurrence of microcracks in a multilayer nitride semiconductor layer and improving junction reliability between the multilayer nitride semiconductor layer and a support substrate. SOLUTION: After performing crystal growth of the multilayer nitride semiconductor layer 2 having a lamination structure of a buffer layer 21, an n-type nitride semiconductor layer 22, a luminous layer 23, and a p-type nitride semiconductor layer 24 to one surface side of a transparent crystal wafer 1 made of a sapphire substrate, the multilayer nitride semiconductor layer 2 is joined to one surface side of a support wafer 30 that becomes the foundation of a support substrate 3. Then, a cutoff groove 6 is formed to reach at least the multilayer nitride semiconductor layer 2 from the other surface side of the transparent crystal wafer 1. After that, light is applied from the other surface side of the transparent crystal wafer 1 to separate the transparent crystal wafer 1 from the multilayer nitride semiconductor wafer 2 before dicing along the cutoff groove 6. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种制造用于抑制多层氮化物半导体层中的微裂纹发生的半导体发光元件的方法，并提高多层氮化物半导体层与支撑衬底之间的结可靠性。解决方案：在具有缓冲层21，n型氮化物半导体层22，发光层23和p型氮化物半导体层24的叠层结构的多层氮化物半导体层2进行晶体生长之后，由蓝宝石衬底制成的透明晶片1的一个表面侧，将多层氮化物半导体层2接合到作为支撑衬底3的基础的支撑晶片30的一个表面侧。然后形成切断槽6 从透明晶体晶片1的另一个表面侧至少到达多层氮化物半导体层2.然后，从透明晶体晶片1的另一个表面侧施加光，以将透明晶片1与多层氮化物半导体晶片2在切割槽6之前切割。版权所有（C）2010，JPO＆INPIT

84. 发明专利

JP4451846B2 Manufacturing method of the nitride semiconductor element 有权
公开(公告)号：JP4451846B2
公开(公告)日：2010-04-14
申请号：JP2005508004
申请日：2004-01-14
申请人：パナソニック株式会社
发明人：靖利川口 , 敦松原 , 俊哉横川 , 明彦石橋 , 岳菅原
IPC分类号： H01L21/205 , C23C16/34 , H01L21/20 , H01S5/02 , H01S5/323 , H01S5/343
CPC分类号： H01S5/32341 , H01L21/02378 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/0265 , H01S5/0207 , H01S5/0213 , H01S5/0217 , H01S5/1017 , H01S5/22 , H01S2304/00 , H01S2304/12

85. 发明专利

JP2009289856A Optical amplifier and method of designing the same 有权
标题翻译：光学放大器及其设计方法
公开(公告)号：JP2009289856A
公开(公告)日：2009-12-10
申请号：JP2008138992
申请日：2008-05-28
申请人： Stanley Electric Co Ltd , スタンレー電気株式会社
发明人： MATSUMOTO TAKAHIRO
IPC分类号： H01S3/06 , H01S3/213
CPC分类号： G02B6/1226 , B82Y20/00 , H01S3/213 , H01S3/2308 , H01S5/0207 , H01S5/0218 , H01S5/041 , H01S5/1046 , H01S5/50
摘要： PROBLEM TO BE SOLVED: To solve the problem that reflected light intensity of a conventional optical amplifier is small. SOLUTION: Visible laser light V made incident on a BK-7 prism 1 is incident on a gold layer 2 at an angle θ of incidence. In the gold layer 2, surface plasmon resonance light is excited with the visible laser light V, and an organic pigment layer 3 is excited and put in an inverted distribution state to have its extinction coefficient k 3 made negative. The angle θ of incidence is a light absorption (plasmon) dip angle at which a reflection factor R of a light incident surface of the gold layer 2 to the visible laser light V2 is minimum in the whole reflection area. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了解决常规光放大器的反射光强度小的问题。
解决方案：入射到BK-7棱镜1上的可见激光V以入射角度θ入射到金层2上。在金层2中，表面等离子体共振光被可见激光V激发，有机颜料层3被激发并处于反向分布状态，使其消光系数k 3 为负。入射角θ是在整个反射区域中金层2的光入射表面与可见激光V2的反射系数R最小的光吸收（等离子体）倾角。版权所有（C）2010，JPO＆INPIT

86. 发明专利

JP2009130030A Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：JP2009130030A
公开(公告)日：2009-06-11
申请号：JP2007301662
申请日：2007-11-21
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： KITATANI TAKESHI , SHINODA KAZUNORI , ADACHI KOICHIRO , AOKI MASAHIRO
IPC分类号： H01S5/16
CPC分类号： H01S5/125 , H01S5/0207 , H01S5/026 , H01S5/0267 , H01S5/1039 , H01S5/1085 , H01S5/12 , H01S5/168 , H01S5/18 , H01S5/22
摘要： PROBLEM TO BE SOLVED: To solve the problem that operating current increases by current leak in a window part in a ridge structure-type end surface light emitting laser having a window region, especially in a short resonator-type laser with small operating current.
SOLUTION: In the window region, a semi-insulating semiconductor layer to which Ru is doped is inserted between an n-type substrate and a p-type cladding layer, or a laminated structure of the layer to which Ru is doped and a Fe doped layer is introduced.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：为了解决具有窗口区域的脊结构型端面发光激光器中的窗口部分中的电流泄漏增加的问题，特别是在具有小的操作的短谐振器型激光器中当前。解决方案：在窗口区域中，将掺杂有Ru的半绝缘半导体层插入在n型衬底和p型覆层之间，或者将Ru掺杂的层的层压结构和引入Fe掺杂层。版权所有（C）2009，JPO＆INPIT

87. 发明专利

JP2009088524A Semiconductor laser and manufacturing method of same 审中-公开
标题翻译：半导体激光器及其制造方法
公开(公告)号：JP2009088524A
公开(公告)日：2009-04-23
申请号：JP2008249181
申请日：2008-09-26
申请人： Osram Opto Semiconductors Gmbh , オスラムオプトセミコンダクターズゲゼルシャフトミットベシュレンクテルハフツングOsram Opto Semiconductors GmbH
发明人： BRICK PETER , WOLFGANG SCHMIDT
IPC分类号： H01S5/18
CPC分类号： H01S5/18 , B82Y20/00 , H01S5/0207 , H01S5/026 , H01S5/0264 , H01S5/0267 , H01S5/0286 , H01S5/0425 , H01S5/1085 , H01S5/3095 , H01S5/34313 , H01S5/42
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser and a manufacturing method of the semiconductor laser.
SOLUTION: The semiconductor laser is achieved as a surface-emitting semiconductor laser having a semiconductor body 4. The semiconductor body 4 includes a first flat surface 12 and a second flat surface 14. Further, the semiconductor body includes at least one active layer 10 emitting radiation between the first flat surface 12 and second flat surface 14. The semiconductor body 4 has at least one first mirror surface 26 inclined to the active layer 10 so as to emit the radiation from the active layer 10 to the first flat surface 12.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供半导体激光器和半导体激光器的制造方法。解决方案：半导体激光器被实现为具有半导体本体4的表面发射半导体激光器。半导体本体4包括第一平坦表面12和第二平坦表面14.此外，半导体本体包括至少一个活性物质在第一平坦表面12和第二平坦表面14之间发射辐射的层10。半导体本体4具有至少一个倾斜于有源层10的第一反射镜表面26，以便将有源层10的辐射发射到第一平坦表面 12.版权所有（C）2009，JPO＆INPIT

88. 发明专利

JP4203752B2 Surface-emitting semiconductor laser and a method of manufacturing the same, optical switch, as well as, optical branching ratio variable element 有权
公开(公告)号：JP4203752B2
公开(公告)日：2009-01-07
申请号：JP2004159410
申请日：2004-05-28
申请人：セイコーエプソン株式会社
发明人：理光望月
IPC分类号： H01S5/183 , H01S3/098 , H01S5/20
CPC分类号： H01S5/18344 , H01S5/0207 , H01S5/18311 , H01S5/18352 , H01S2301/18

89. 发明专利

JP4110416B2 Surface-emitting type device and a method of manufacturing the same 有权
公开(公告)号：JP4110416B2
公开(公告)日：2008-07-02
申请号：JP2005079183
申请日：2005-03-18
申请人：セイコーエプソン株式会社
发明人：一大西 , 哲朗西田
IPC分类号： H01S5/183
CPC分类号： H01S5/0261 , H01L27/15 , H01S5/0207 , H01S5/0425 , H01S5/06226 , H01S5/06825 , H01S5/18311 , H01S5/18338 , H01S5/3081 , H01S2301/176

90. 发明专利

JP2008085090A Semiconductor laser device and its manufacturing method 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：JP2008085090A
公开(公告)日：2008-04-10
申请号：JP2006263690
申请日：2006-09-28
申请人： Fujitsu Ltd , 富士通株式会社
发明人： KAWAGUCHI KENICHI , YAMAMOTO TAKAYUKI
IPC分类号： H01S5/183 , H01S5/187 , H01S5/34
CPC分类号： H01S5/18341 , B82Y20/00 , H01S5/0207 , H01S5/021 , H01S5/0261 , H01S5/0425 , H01S5/18305 , H01S5/18308 , H01S5/18369 , H01S5/3027 , H01S5/3036 , H01S5/3412 , H01S2304/04
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device which is capable of efficient current injection. SOLUTION: A DBR mirror 2 is formed on a Si substrate 1, an n-type conductive layer 4 is formed on the DBR mirror 2, a light-emitting layer 5 is formed in a part on the conductive layer 4, an insulating layer 7 is formed in the side of the light-emitting layer 5 on the conductive layer 4, a p-type conductive layer 8 is formed on the insulating layer 7 and the light-emitting layer 5, a DBR mirror 9 is formed on the conductive layer 8 so as to be positioned directly on the light-emitting layer 5, an electrode 10 electrically connected to the conductive layer 4 is formed, and an electrode 11 is formed on the conductive layer 8. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够有效地进行电流注入的半导体激光器件。解决方案：在Si衬底1上形成DBR镜2，在DBR镜2上形成n型导电层4，在导电层4的一部分上形成发光层5，绝缘层7形成在导电层4上的发光层5侧，在绝缘层7和发光层5上形成p型导体层8，DBR反射镜9形成在导电层8直接位于发光层5上，形成与导电层4电连接的电极10，并且在导电层8上形成电极11.版权所有（C））2008，JPO＆INPIT

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