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1. 发明专利

JP2010109015A Method of manufacturing semiconductor light-emitting element 审中-公开
标题翻译：制造半导体发光元件的方法
公开(公告)号：JP2010109015A
公开(公告)日：2010-05-13
申请号：JP2008277315
申请日：2008-10-28
申请人： Panasonic Corp , Panasonic Electric Works Co Ltd , パナソニック株式会社 , パナソニック電工株式会社
发明人： YAMAE KAZUYUKI , FUKUSHIMA HIROSHI , YASUDA MASAHARU , IWAHASHI TOMOYA , KAMEI HIDENORI , MAEDA SHUSAKU
IPC分类号： H01L33/32
CPC分类号： H01S5/0207 , H01L33/0079 , H01L33/0095 , H01L33/32 , H01S5/0201 , H01S5/0202 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/02492 , H01S5/32341
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light-emitting element for suppressing occurrence of microcracks in a multilayer nitride semiconductor layer and improving junction reliability between the multilayer nitride semiconductor layer and a support substrate. SOLUTION: After performing crystal growth of the multilayer nitride semiconductor layer 2 having a lamination structure of a buffer layer 21, an n-type nitride semiconductor layer 22, a luminous layer 23, and a p-type nitride semiconductor layer 24 to one surface side of a transparent crystal wafer 1 made of a sapphire substrate, the multilayer nitride semiconductor layer 2 is joined to one surface side of a support wafer 30 that becomes the foundation of a support substrate 3. Then, a cutoff groove 6 is formed to reach at least the multilayer nitride semiconductor layer 2 from the other surface side of the transparent crystal wafer 1. After that, light is applied from the other surface side of the transparent crystal wafer 1 to separate the transparent crystal wafer 1 from the multilayer nitride semiconductor wafer 2 before dicing along the cutoff groove 6. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种制造用于抑制多层氮化物半导体层中的微裂纹发生的半导体发光元件的方法，并提高多层氮化物半导体层与支撑衬底之间的结可靠性。解决方案：在具有缓冲层21，n型氮化物半导体层22，发光层23和p型氮化物半导体层24的叠层结构的多层氮化物半导体层2进行晶体生长之后，由蓝宝石衬底制成的透明晶片1的一个表面侧，将多层氮化物半导体层2接合到作为支撑衬底3的基础的支撑晶片30的一个表面侧。然后形成切断槽6 从透明晶体晶片1的另一个表面侧至少到达多层氮化物半导体层2.然后，从透明晶体晶片1的另一个表面侧施加光，以将透明晶片1与多层氮化物半导体晶片2在切割槽6之前切割。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2011071316A Semiconductor light-emitting element and lighting apparatus 审中-公开
标题翻译：半导体发光元件和照明设备
公开(公告)号：JP2011071316A
公开(公告)日：2011-04-07
申请号：JP2009221083
申请日：2009-09-25
申请人： Panasonic Electric Works Co Ltd , パナソニック電工株式会社
发明人： IWAHASHI TOMOYA , FUKUSHIMA HIROSHI , YASUDA MASAHARU , MURAI AKIHIKO , YAMAE KAZUYUKI
IPC分类号： H01L33/44
摘要： PROBLEM TO BE SOLVED: To reduce a risk that a transparent layer and a metal layer are peeled off. SOLUTION: An n-type semiconductor layer 11, a light emission layer 12, and a p-type semiconductor layer 13 are deposited, and a reflection film A is formed at the opposite side from a surface for extracting light from the light emission layer 12. The reflection film A is composed of a laminate of the transparent layer 15 including a transparent portion 15c and a metal portion 15b and the metal layer 16 deposited at the opposite side from the light emission layer 12 of the transparent layer 15. The transparent portion 15c and the metal portion 15b are so provided as to penetrate the transparent layer 15. The transparent portion 15c has a refractive index lower than those of layers formed at the light emission layer 12 side of the transparent layer 15. Between the transparent portion 15c and the metal layer 16 and between the transparent portion 15c and the metal portion 15b, an adhesion film 18 is formed to stick the transparent portion 15c and the metal layer 16, and the transparent portion 15c and the metal portion 15b. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：降低透明层和金属层被剥离的风险。解决方案：沉积n型半导体层11，发光层12和p型半导体层13，并且在与用于从光提取光的表面相反的一侧形成反射膜A 反射膜A由包括透明部分15c和金属部分15b的透明层15和沉积在与透明层15的发光层12相反的一侧的金属层16组成。透明部分15c和金属部分15b设置成穿透透明层15.透明部分15c的折射率低于在透明层15的发光层12侧形成的层的折射率。在透明部分15c和金属层16之间，并且在透明部分15c和金属部分15b之间，形成粘合膜18以粘贴透明部分15c和金属层16，并且透明部分部分15c和金属部分15b。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2009260316A Semiconductor light-emitting element and illuminating apparatus using the same 审中-公开
标题翻译：使用相同的半导体发光元件和照明设备
公开(公告)号：JP2009260316A
公开(公告)日：2009-11-05
申请号：JP2009070332
申请日：2009-03-23
申请人： Panasonic Electric Works Co Ltd , パナソニック電工株式会社
发明人： FUKUSHIMA HIROSHI , YAMAE KAZUYUKI , YASUDA MASAHARU , IWAHASHI TOMOYA , MURAI AKIHIKO
IPC分类号： H01L33/00 , H01L33/10 , H01L33/28 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/46
CPC分类号： H01L33/42 , H01L33/22 , H01L33/387 , H01L33/405 , H01L33/46
摘要： PROBLEM TO BE SOLVED: To improve light extraction efficiency in a semiconductor light-emitting element constituted by laminating each layer of an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer on a growth substrate having translucency. SOLUTION: When the light extraction efficiency is improved by providing a reflective film on the surface opposite to an extraction surface 14 of light from the light-emitting layer 12, the reflective film is constituted by including a transparent layer 15 having refractive index lower than that of the p-type semiconductor layer 13 with which the reflective film contacts, and thickness of 3/4 optical wavelength or more; and a metal layer 16, which is laminated on the transparent layer 15, and having a high reflectance. Consequently, even when light made incident at a deep angle exceeding a critical angle becomes permeate wave called as evanescent wave at an interface between GaN with high refractive index and the reflective film, most of them can be returned to the interface by including the transparent layer thickness of 3/4 optical wavelength or more, the light made incident to the reflective film at every incident angle is efficiently extracted, and lower power consumption and higher luminance are achieved. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提高在生长衬底上层叠各层n型半导体层，发光层和p型半导体层而构成的半导体发光元件中的光提取效率具有半透明度。解决方案：通过在与发光层12的光的提取面14相反的表面上设置反射膜来提高光提取效率，反射膜由包括具有折射率的透明层15 低于反射膜接触的p型半导体层13的厚度，并且具有3/4光学波长或更大的厚度; 以及层叠在透明层15上并具有高反射率的金属层16。因此，即使当以超过临界角的深角入射的光成为在高折射率的GaN与反射膜之间的界面处被称为消逝波的渗透波，其大部分可以通过包括透明层返回到界面 3/4光波长以上的厚度，能够有效地提取入射角度的入射到反射膜的光，实现较低的功耗和更高的亮度。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2009238932A Semiconductor light emitting device and lighting device using the same 有权
标题翻译：半导体发光器件和使用其的照明器件
公开(公告)号：JP2009238932A
公开(公告)日：2009-10-15
申请号：JP2008081566
申请日：2008-03-26
申请人： Panasonic Electric Works Co Ltd , パナソニック電工株式会社
发明人： FUKUSHIMA HIROSHI , YAMAE KAZUYUKI , YASUDA MASAHARU , IWAHASHI TOMOYA
IPC分类号： H01L33/10 , H01L33/12 , H01L33/32 , H01L33/46 , H01L33/60
摘要： PROBLEM TO BE SOLVED: To improve light extraction efficiency in a semiconductor light emitting device wherein an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer are stacked on a growth substrate with light transparency. SOLUTION: To improve light extraction efficiency by providing a reflection film on the surface opposite to a light extraction surface 14 from a light-emitting layer 12, the reflection film includes a first transparent layer 15a which has a lower refractive index than a p-type semiconductor layer 13 in contact with itself and has a thickness of ≥1/10 optical wavelength, a second transparent layer 15b which has a lower refractive index than the p-type semiconductor layer 13, a higher refractive index than the first transparent layer 15a, a reverse stress characteristic to the first transparent layer 15a, and a thickness several times the first transparent layer 15a, and a metal layer 16 which is stacked on the transparent layers 15a and 15b and has a high reflection factor. Accordingly, even if light coming in at a large angle exceeding an critical angle becomes a leaking light called an evanescent wave, it can be almost returned to an interface. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提高半导体发光器件中的光提取效率，其中n型半导体层，发光层和p型半导体层以光透明度堆叠在生长衬底上。解决方案：为了通过在与发光层12相反的光提取面14的表面上设置反射膜来提高光提取效率，反射膜包括第一透明层15a，折射率低于 p型半导体层13与其自身接触并且具有≥1/ 10个光学波长的厚度，具有比p型半导体层13低的折射率的第二透明层15b，比第一透明层更高的折射率层15a，第一透明层15a的反应力特性，以及第一透明层15a的数倍的厚度，层叠在透明层15a，15b上并具有高反射率的金属层16。因此，即使以大角度超过临界角的光成为被称为ev逝波的泄漏光，也可以几乎返回到界面。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2010272592A Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2010272592A
公开(公告)日：2010-12-02
申请号：JP2009121308
申请日：2009-05-19
申请人： Panasonic Electric Works Co Ltd , パナソニック電工株式会社
发明人： YASUDA MASAHARU , IWAHASHI TOMOYA , MURAI AKIHIKO , FUKUSHIMA HIROSHI , YAMAE KAZUYUKI , CHICHIBU SHIGEHIDE , ONUMA TAKEYOSHI , HAMAME KOJI
IPC分类号： H01L33/10 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element for improving the bonding reliability between a metallic reflective layer and a dielectric layer, while taking out efficiently light generated within the light emitting element to outside of the element. SOLUTION: The semiconductor light emitting element includes an n-type nitride semiconductor layer 2, a light emitting semiconductor layer 3, and a p-type nitride semiconductor layer 4, which are laminated one by one on a support substrate 1. A Pt electrode layer 5 for Ohmic contacting to the p-type nitride semiconductor layer 4 and a reflective layer C composed of light reflecting material are laminated one by one on the p-type nitride semiconductor layer 4 to form a p type electrode B. The reflective layer C includes a dielectric film 7 composed of dielectric material, a metallic reflective layer 8a composed of metal material, and a transparent adhesive layer 9 prepared between the metallic reflective layer 8a and the dielectric film 7. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于提高金属反射层和电介质层之间的接合可靠性的半导体发光元件，同时将发光元件内产生的光有效地取出到元件外部。解决方案：半导体发光元件包括在支撑衬底1上逐层层叠的n型氮化物半导体层2，发光半导体层3和p型氮化物半导体层4。用于与p型氮化物半导体层4的欧姆接触的Pt电极层5和由光反射材料构成的反射层C在p型氮化物半导体层4上一个接一个地层叠以形成p型电极B.反射层 C包括由介电材料构成的电介质膜7，由金属材料构成的金属反射层8a和在金属反射层8a和电介质膜7之间制备的透明粘合剂层9.权利要求：（C） JPO＆INPIT

6. 发明专利

JP2010147445A Light-emitting device 审中-公开
标题翻译：发光装置
公开(公告)号：JP2010147445A
公开(公告)日：2010-07-01
申请号：JP2008326531
申请日：2008-12-22
申请人： Panasonic Electric Works Co Ltd , パナソニック電工株式会社
发明人： URANO YOJI , AKEDA TAKANORI , IWAHASHI TOMOYA
IPC分类号： H01L33/48
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device capable of improving luminous efficiency and reducing unevenness of luminance.
SOLUTION: The light-emitting device includes: a dome-like reflector 40 that is fixed to a packaging substrate 20 while an LED chip 10 is surrounded in a portion to the packaging substrate 20, and reflects light radiated from the LED chip 10 to the side of the packaging substrate 20; and a color conversion section 50 formed from a light-transmitting material containing a phosphor. In the LED chip 10, an LED thin-film section 12 and cathode and anode electrodes 18, 17 are formed at the side of a lower surface 11a of a transparent substrate 11 of a hexagonal weight shape, and the LED thin-film section 12 is closer to the packaging substrate 20 than the transparent substrate 11 for packaging. On the packaging substrate 20, conductor patterns 23, 23, which are joined to the cathode and anode electrodes 18, 17 of the LED chip 10 via bumps 30, 30, respectively, are formed at one surface side of a light-transmitting substrate 21, and the color conversion section 50 is provided on the other surface of the light-transmitting substrate 21.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供能够提高发光效率并降低亮度不均匀性的发光装置。解决方案：发光装置包括：圆顶状反射体40，其在LED芯片10被包围在包装基板20的一部分中的同时固定到封装基板20，并且反射从LED芯片辐射的光 10到包装基板20的一侧; 以及由含有荧光体的透光材料形成的颜色转换部分50。在LED芯片10中，在六边形重量形状的透明基板11的下表面11a的一侧形成有LED薄膜部分12和阴极和阳极电极18,17，并且LED薄膜部分12 比用于包装的透明基板11更靠近包装基板20。在封装基板20上，分别通过凸块30,30与LED芯片10的阴极电极18和阳极电极17接合的导体图案23,23分别形成在透光基板21的一个表面侧，并且颜色转换部分50设置在透光基板21的另一个表面上。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2010087283A Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2010087283A
公开(公告)日：2010-04-15
申请号：JP2008255435
申请日：2008-09-30
申请人： Panasonic Electric Works Co Ltd , パナソニック電工株式会社
发明人： MURAI AKIHIKO , YAMAE KAZUYUKI , IWAHASHI TOMOYA , FUKUSHIMA HIROSHI , YASUDA MASAHARU
IPC分类号： H01L33/32 , H01L33/36
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element improving reliability while improving light extraction efficiency. SOLUTION: This semiconductor light emitting element includes: a transparent conductive film 9 laminated between a p-type nitride semiconductor layer 6 and an anode electrode 7 and on the side of the p-type nitride semiconductor layer 6 opposite to a nitride light emitting layer 5 side, and formed of GZO (ZnO doped with Ga) film small in a refractive index relative to the p-type nitride semiconductor layer 6; and a reflecting conductive film 11 formed on the side of the conductive film 9 opposite to the p-type nitride semiconductor layer 6 side, having conductivity, and formed of a Ag film reflecting light emitted from the nitride light emitting layer 5; wherein an adhesive conductive film 10 transparent for light emitted from the nitride light emitting layer 5, having conductivity, enhancing adhesion force of the reflecting conductive film 11 to the transparent conductive film 9 side, and formed of a Pt film is interposed between the transparent conductive film 9 and the reflecting conductive film 11. In this case, the film thickness of the Pt film constituting the adhesive conductive film 10 is set ≤0.5 nm. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种提高可靠性的半导体发光元件，同时提高光提取效率。解决方案：该半导体发光元件包括：层叠在p型氮化物半导体层6和阳极电极7之间的透明导电膜9和与氮化物光的相反侧的p型氮化物半导体层6侧由相对于p型氮化物半导体层6的折射率小的GZO（掺杂有Ga的ZnO）膜形成; 以及反射导电膜11，其形成在导电膜9的与p型氮化物半导体层6侧相反的一侧，具有导电性，并且由反射从氮化物发光层5发出的光的Ag膜形成; 其中，从氮化物发光层5发射的光透明的粘合导电膜10具有导电性，增强了反射导电膜11对透明导电膜9侧的粘合力，并由Pt膜形成，该透明导电膜膜9和反射导电膜11.在这种情况下，构成粘合导电膜10的Pt膜的膜厚设定为≤0.5nm。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2010087282A Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2010087282A
公开(公告)日：2010-04-15
申请号：JP2008255434
申请日：2008-09-30
申请人： Panasonic Electric Works Co Ltd , パナソニック電工株式会社
发明人： IWAHASHI TOMOYA , MURAI AKIHIKO , FUKUSHIMA HIROSHI , YASUDA MASAHARU , YAMAE KAZUYUKI
IPC分类号： H01L33/32 , H01L33/36
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element capable of enhancing reliability while improving light extraction efficiency. SOLUTION: The semiconductor light emitting element has, between a p-type nitride semiconductor layer 6 and an anode electrode 7, a transparent conductive film 9 laminated on the opposite side of the p-type nitride semiconductor layer 6 from a nitride light emitting layer 5 and made of a GZO film having a smaller refractive index than the p-type nitride semiconductor layer 6, and a reflective conductive film 12 formed on the opposite side of the transparent conductive film 9 from the p-type nitride semiconductor layer 6, having conductivity, and made of an Ag film reflecting light emitted from the nitride light emitting layer 5. Further, the semiconductor light emitting element has, between the transparent conductive film 9 and reflective conductive film 12, low-refractive-index transparent films 10 laminated partially on the transparent conductive film 9 and having a lower refractive index than the p-type nitride semiconductor layer 6, and an adhesion conductive film 11 formed on the surface side of the transparent conductive film 9 where the low-refractive-index transparent films 10 are laminated, having transparency to the light emitted from the nitride light emitting layer 5 and conductivity, and enhancing the adhesive strength of the reflective conductive film 12 to the side of the transparent conductive film 9. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在提高光提取效率的同时提高可靠性的半导体发光元件。解决方案：半导体发光元件在p型氮化物半导体层6和阳极电极7之间具有层叠在p型氮化物半导体层6的与氮化物光的相反侧的透明导电膜9 由与p型氮化物半导体层6相比折射率小的GZO膜构成的发光层5和从p型氮化物半导体层6形成在透明导电膜9的相对侧的反射导电膜12 具有导电性，并且由反射从氮化物发光层5发射的光的Ag膜制成。此外，半导体发光元件在透明导电膜9和反射导电膜12之间具有低折射率透明膜10 部分地层压在透明导电膜9上并且具有比p型氮化物半导体层6更低的折射率，以及形成在第二层上的粘附导电膜11 在透明导电膜9的表面侧，其上层叠有低折射率透明膜10，对从氮化物发光层5发射的光具有透明度和导电性，并且将反射导电膜12的粘合强度提高到透明导电膜9的侧面。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2010199247A Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：JP2010199247A
公开(公告)日：2010-09-09
申请号：JP2009041491
申请日：2009-02-24
申请人： Panasonic Electric Works Co Ltd , パナソニック電工株式会社
发明人： MURAI AKIHIKO , YASUDA MASAHARU , IWAHASHI TOMOYA , YAMAE KAZUYUKI
IPC分类号： H01L33/48 , H01L33/10 , H01L33/32
CPC分类号： H01L33/387 , H01L33/10 , H01L33/405 , H01L33/44 , H01L33/62 , H01L33/647 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device capable of improving a heat dissipation to thereby improve the efficiency of luminescence. SOLUTION: A mounting substrate 20 of the light-emitting device has conductive patterns 27, 28 respectively joined to an anode electrode 7 and a cathode electrode 8 of an LED chip A through bumps 37, 38. The LED chip A has a transparent conductive film 9 laminated between a p-type nitride semiconductor layer 4 and an anode electrode 7 on the opposite side of a nitride light-emitting layer 3 side of the p-type nitride semiconductor layer 4 and having a refractive index smaller than that of the p-type nitride semiconductor layer 4; a reflective conductor film 11 formed on the opposite side of the p-type nitride semiconductor layer 4 side of the transparent conductive film 9 and reflecting the light emitted from the nitride light-emitting layer 3; and a plurality of island shaped low refractive index dielectric layers 10 partially laminated on the transparent conductive film 9 between the transparent conductive film 9 and the reflective conductive film 11, and having a small refractive index than that of the p-type nitride semiconductor layer 4. At least regions respectively overlapping every bump 37 of the transparent conductive layer 9 are a formation-forbidden regions 12 of the low refractive index dielectric layer 10. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够改善散热性从而提高发光效率的发光装置。解决方案：发光装置的安装基板20具有通过凸块37,38分别连接到LED芯片A的阳极电极7和阴极电极8的导电图案27,28。LED芯片A具有在p型氮化物半导体层4的氮化物发光层3侧的相反侧的p型氮化物半导体层4和阳极电极7之间层叠有折射率小于 p型氮化物半导体层4; 形成在透明导电膜9的p型氮化物半导体层4侧的相对侧并反射从氮化物发光层3发射的光的反射导体膜11; 以及部分层压在透明导电膜9和反射导电膜11之间的透明导电膜9上的多个岛状低折射率电介质层10，其折射率小于p型氮化物半导体层4的折射率分别与透明导电层9的每个凸起37重叠的至少一部分区域是低折射率介电层10的禁止形成区域12。（C）2010，JPO＆INPIT

10. 发明专利

JP2010135859A Method of manufacturing semiconductor light emitting device 有权
标题翻译：制造半导体发光器件的方法
公开(公告)号：JP2010135859A
公开(公告)日：2010-06-17
申请号：JP2010060439
申请日：2010-03-17
申请人： Panasonic Electric Works Co Ltd , パナソニック電工株式会社
发明人： TAKANO TAKAYOSHI , KONDO YUKIHIRO , TAKAKURA NOBUYUKI , YASUDA MASAHARU , IWAHASHI TOMOYA
IPC分类号： H01L33/32
摘要： PROBLEM TO BE SOLVED: To achieve a semiconductor light emitting device consisting of a plurality of nanocolumns, which is high efficient by utilizing the advantage of the nanocolumns of no through transition. SOLUTION: A silicon oxide film 2 is formed on a substrate 1 (Fig.1(a)), and prior to growth of nanocolumns 7, a mask (silicon oxide film pattern 5) having an opening 4 as a portion to be grown is formed (Fig.1(b) to Fig.1(c)). The layers of the nanocolumns 7 are each grown with them covered by the mask (Fig.1(d)), the inside of the opening 4 is grown as single crystal nanocolumns 7. On the mask, the polycrystallin Gan layer 6 is grown and the GaN layer 6 on the mask is removed by etching (Fig.1(e)), and thus, an insulator is filled in a gap between the nanocolumns 7. After that, p-type electrodes (transparent electrodes 8) are continuously formed on the tips of the nanocolumns 7 exposed on the opening 4 in the mask, and n-type electrodes 9 are formed on the substrate 1 (Fig.1(f)). COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了实现由多个纳米柱组成的半导体发光器件，其通过利用无过渡的纳米柱的优点而高效。解决方案：在基板1上形成氧化硅膜2（图1（a）），在纳米柱7生长之前，将具有开口4的掩模（氧化硅膜图案5）作为部分（图1（b）至图1（c））。纳米柱7的各层均由掩模覆盖（图1（d））而生长，开口4的内部生长为单晶纳米柱7.在掩模上，生长多晶型甘蓝层6，通过蚀刻去除掩模上的GaN层6（图1（e）），从而将绝缘体填充在纳米柱7之间的间隙中。之后，连续形成p型电极（透明电极8）在掩模上的开口4上露出的纳米柱7的尖端和在基板1上形成n型电极9（图1（f））。版权所有（C）2010，JPO＆INPIT

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