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61. 发明专利

JP2012508990A Light radiation system in accordance with the Poraritonmodo with electrical injection of quantum well 有权
公开(公告)号：JP2012508990A
公开(公告)日：2012-04-12
申请号：JP2011543788
申请日：2009-10-29
申请人：サントゥルナシオナルドゥラルシェルシュシアンティフィックセーエヌエールエス
发明人：ソルニシコフ，ドミートリ , カルロ，アルドディ , ペトロラーティ，エレオノラ , マルピュエク，ギーヨム
IPC分类号： H01S5/183
CPC分类号： H01S5/18308 , B82Y20/00 , H01S5/042 , H01S5/10 , H01S5/18369 , H01S5/18383 , H01S5/34333
摘要：本発明は、少なくとも１つの光学モードを有する光キャビティ（１０）であって、少なくとも１つの透過性を有する反射器（１２）と、量子井戸（２１，２２）の第一の組（２０）と、上記第一の組（２０）の上記量子井戸（２１，２２）の電気的注入手段（３１，３２，３３）とを備えている光キャビティ（１０）を備えている光（２）放射システム（１）に関する。上記第一の組（２０）の上記量子井戸（２１，２２）は、それらの電子的共鳴の少なくとも１つが、上記光キャビティ（１０）の光学モードとの強結合系であるように配置されているとともに、励起子−ポラリトン混在モードに従って光（２）を放射するように配置されている。このシステム（１）において、上記光キャビティ（１０）は、上記電気的注入手段（３１，３２，３３）の直接的範囲の外側に配置されている量子井戸（４１，４２，４３，４４，４５）の第二の組（４０）を更に備え、上記第二の組（４０）は、それらの電子的共鳴の少なくとも１つが、上記光キャビティ（１０）の上記励起子−ポラリトン混在モードとの強結合系中にあるように、上記第一の組（２０）の上記量子井戸（２１，２２）に関連して配置されている。

62. 发明专利

JP2011071506A Vertical surface light-emitting semiconductor device 有权
标题翻译：垂直表面发光半导体器件
公开(公告)号：JP2011071506A
公开(公告)日：2011-04-07
申请号：JP2010205649
申请日：2010-09-14
申请人： Palo Alto Research Center Inc , パロ・アルト・リサーチ・センター・インコーポレーテッドPalo Alto Research Center Incorporated
发明人： STRITTMATTER ANDRE , CHUA CHRISTOPHER L , KIESEL PETER , JOHNSON NOBLE M
IPC分类号： H01S5/14 , G02F1/37 , H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01S3/109 , H01S5/041 , H01S5/18347 , H01S5/1835 , H01S5/18369 , H01S5/18383 , H01S5/3407 , H01S2301/14
摘要： PROBLEM TO BE SOLVED: To provide a far-ultraviolet light-emitting device which is ultra-compact and is easy to adjust. SOLUTION: The light-emitting semiconductor device includes a pumping light source, a semiconductor gain structure, a gain structure sub-cavity and a concave out-coupling mirror. The pumping light source is disposed, with respect to the gain structure sub-cavity, such that the light emitted by the pumping light source is incident on the gain structure sub-cavity so that the gain structure sub-cavity can emit a light. Furthermore, the gain structure sub-cavity is disposed with respect to the concave out-coupling mirror, such that the light emitted by the gain structure sub-cavity is made incident on the concave out-coupling mirror and is reflected on the upper end face of the gain structure sub-cavity so that the gain structure sub-cavity can further emit the light. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种超小型且易于调节的远紫外发光装置。解决方案：发光半导体器件包括泵浦光源，半导体增益结构，增益结构子腔和凹出耦合镜。相对于增益结构子腔设置泵浦光源，使得由泵浦光源发射的光入射到增益结构子腔上，使得增益结构子腔能够发光。此外，增益结构子腔相对于凹出射耦合镜设置，使得由增益结构子腔发射的光被入射到凹出射耦合镜上，并在上端面的增益结构子腔，使得增益结构子腔可以进一步发射光。版权所有（C）2011，JPO＆INPIT

63. 发明专利

JP2011029493A Surface emitting laser 有权
标题翻译：表面发射激光
公开(公告)号：JP2011029493A
公开(公告)日：2011-02-10
申请号：JP2009175352
申请日：2009-07-28
申请人： Canon Inc , キヤノン株式会社
发明人： TAKEUCHI TETSUYA , SEKIGUCHI YOSHINOBU
IPC分类号： H01S5/183 , H01S5/343
CPC分类号： H01S5/18311 , H01S5/18383
摘要： PROBLEM TO BE SOLVED: To provide a surface emitting laser capable of controlling a beam shape and achieving high efficiency and high power.
SOLUTION: The surface emitting laser includes a gain region having a plurality of active layers in which gain is generated by current injection and a current constriction layer in which a current injected into the plurality of active layers is constricted, between first and second semiconductor multilayer reflectors arranged opposite to each other. The gain region includes at least first and second active layers as the plurality of active layers, and the first and second active layers have respectively different active layer structures corresponding to differences in current density distributions in in-plane directions of these active layers which may be generated by current constriction in the current constriction layer.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够控制光束形状并实现高效率和高功率的表面发射激光器。解决方案：表面发射激光器包括增益区域，其具有多个有源层，其中通过电流注入产生增益;以及电流收缩层，其中注入到多个有源层中的电流在第一和第二半导体多层反射器彼此相对布置。所述增益区域至少包括作为所述多个有源层的第一和第二有源层，并且所述第一和第二有源层具有对应于这些有源层的面内方向上的电流密度分布的差异的不同的有源层结构，所述有源层结构可以是由电流收缩层中的电流收缩产生。版权所有（C）2011，JPO＆INPIT

64. 发明专利

JP2009277815A Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2009277815A
公开(公告)日：2009-11-26
申请号：JP2008126665
申请日：2008-05-14
申请人： Sony Corp , ソニー株式会社
发明人： MASUI TAKESHI , ARAKIDA TAKAHIRO , YAMAUCHI YOSHINORI , KODA RINTARO , OKI TOMOYUKI , SHIROKISHI NAOTERU
IPC分类号： H01S5/187
CPC分类号： H01S5/1833 , H01S5/0215 , H01S5/0217 , H01S5/0224 , H01S5/0421 , H01S5/0425 , H01S5/18311 , H01S5/18316 , H01S5/18322 , H01S5/18325 , H01S5/18383 , H01S5/2086 , H01S5/3095 , H01S5/4087
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element that increases in light output in a state wherein an FFP is stable and easily performs current control by one driver.
SOLUTION: In a laminate structure 11, a PIN structure is formed of an n-type DBR layer 12, a clad layer 16, an active layer 17, a clad layer 18, and a p-type contact layer 19, and a PIN structure is formed of an n-type contact layer 20, a clad layer 21, an active layer 22, a clad layer 23, and a p-type DBR layer 13. The n-type semiconductor layer (n-type contact layer 20) of one PIN structure and the p-type semiconductor layer (p-type contact layer 19) of the other PIN structure both come into contact with a connection portion 30 and are electrically connected.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体发光元件，其在FFP稳定并且容易地由一个驱动器执行电流控制的状态下增加光输出。解决方案：在层压结构11中，PIN结构由n型DBR层12，包层16，有源层17，覆层18和p型接触层19形成，以及 PIN结构由n型接触层20，包层21，有源层22，覆盖层23和p型DBR层13形成.n型半导体层（n型接触层另一个PIN结构的p型半导体层（p型接触层19）与连接部30接触并电连接。版权所有（C）2010，JPO＆INPIT

65. 发明专利

JP2008060338A Vertical-cavity surface-emitting semiconductor laser, and manufacturing method thereof 有权
标题翻译：垂直表面发射半导体激光器及其制造方法
公开(公告)号：JP2008060338A
公开(公告)日：2008-03-13
申请号：JP2006235681
申请日：2006-08-31
申请人： Fuji Xerox Co Ltd , 富士ゼロックス株式会社
发明人： YOSHIKAWA MASAHIRO , YAMAMOTO MASACHIKA , KONDO TAKASHI
IPC分类号： H01S5/187
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/18375 , H01S5/18377 , H01S5/18383 , H01S5/18394 , H01S5/34313 , H01S2301/166
摘要： PROBLEM TO BE SOLVED: To provide a vertical-cavity surface-emitting semiconductor laser wherein its higher transverse mode can be suppressed over a wide temperature range.
SOLUTION: In the VCSEL, an n-type lower DBR 106, an active region 108, a current constricting layer 110, a p-type upper DBR 112, and a p-type GaAs contacting layer 114 are laminated on a substrate 102; and a p-side upper electrode 130 including an opening portion 132 specifying the outgoing region of its laser beam is formed on the contacting layer 114. When representing the oscillating wavelength of the laser beam as λ, an optical film thickness T of the summation of the contacting layer 114 and an uppermost layer 112c of the upper DBR which is contacted with the contacting layer 114 is made smaller than λ/4.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种垂直腔表面发射半导体激光器，其中可以在较宽的温度范围内抑制较高的横向模式。解决方案：在VCSEL中，将n型下DBR 106，有源区108，电流限制层110，p型上DBR 112和p型GaAs接触层114层叠在基板上 102; 并且在接触层114上形成包括指定其激光束的出射区域的开口部分132的p侧上电极130.当将激光束的振荡波长表示为λ时，求和的光学膜厚度T 接触层114和与接触层114接触的上DBR的最上层112c被制成小于λ/ 4。版权所有（C）2008，JPO＆INPIT

66. 发明专利

JP2007049144A High-power vertical external cavity surface emitting laser 审中-公开
标题翻译：高功率垂直外腔表面发射激光
公开(公告)号：JP2007049144A
公开(公告)日：2007-02-22
申请号：JP2006212206
申请日：2006-08-03
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM KI-SUNG , KIN TAKU , DEN KENSHU
IPC分类号： H01S5/187
CPC分类号： B82Y20/00 , H01S5/041 , H01S5/14 , H01S5/18383 , H01S5/2009 , H01S5/3406 , H01S5/34313 , H01S5/34346 , H01S5/34353
摘要： PROBLEM TO BE SOLVED: To provide a vertical external cavity surface emitting laser which has an improved structure so that increased profit efficiency in a quantum well layer can improve laser efficiency.
SOLUTION: A VECSEL device comprises: a bottom DBR mirror 120 formed on a substrate 110; an RPG layer 130 formed on the bottom DBR layer; a capping layer 140 formed on the RPG layer; an optical pump 160 irradiating a pump beam onto the surface of the capping layer; and an external cavity mirror 170 arranged on an external surface corresponding to the bottom DBR mirror. The RPG layer comprises: a first barrier layer 132 periodically formed on nodes of a standing wave, and formed of a material having a larger energy band gap width than that of the pump beam; and a gain layer 136 including a plurality of quantum well layers 136a formed of InGaAs and disposed between the first barrier layers, and second barrier layers 136b disposed on upper and lower parts of each quantum well layer.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有改进结构的垂直外腔表面发射激光器，从而提高量子阱层的利润效率可以提高激光效率。解决方案：VECSEL装置包括：形成在基板110上的底部DBR反射镜120; 形成在底部DBR层上的RPG层130; 形成在RPG层上的覆盖层140; 将泵浦光束照射到覆盖层的表面上的光学泵160; 以及布置在对应于底部DBR镜的外表面上的外腔镜170。 RPG层包括：周期性地形成在驻波的节点上的第一阻挡层132，并且由具有比泵浦光束的能带宽度大的材料形成; 以及增益层136，其包括由InGaAs形成并设置在第一阻挡层之间的多个量子阱层136a和设置在每个量子阱层的上部和下部的第二势垒层136b。版权所有（C）2007，JPO＆INPIT

67. 发明专利

JP2007036233A Vcsel system with lateral p-n juunction 审中-公开
标题翻译：具有侧向P-N功能的VCSEL系统
公开(公告)号：JP2007036233A
公开(公告)日：2007-02-08
申请号：JP2006199254
申请日：2006-07-21
申请人： Avago Technologies General Ip (Singapore) Private Ltd , アバゴ・テクノロジーズ・ジェネラル・アイピー(シンガポール)プライベート・リミテッド
发明人： MILLER JEFFREY N , CORZINE SCOTT W , BOUR DAVID
IPC分类号： H01S5/183
CPC分类号： B82Y20/00 , H01S5/0424 , H01S5/0425 , H01S5/18341 , H01S5/18369 , H01S5/18383 , H01S5/2203 , H01S5/341 , H01S5/3428 , H01S5/34333 , H01S2304/12
摘要： PROBLEM TO BE SOLVED: To provide a GaN VCSEL with a multiple gain region capable of suppressing loss and obtaining larger optical gain. SOLUTION: In the vertical cavity of VCSEL, the multiple gain regions are formed with separated spacers. Each gain region includes a quantum well consisting of multiple quantum well layers. The lateral p-n junction is formed between this quantum well and an outer shell section formed around the vertical cavity. Photons are generated in the multiple gain region by applying forward bias to the lateral p-n junction. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有能够抑制损耗并获得较大光学增益的多增益区域的GaN VCSEL。解决方案：在VCSEL的垂直腔中，多个增益区域由分离的间隔物形成。每个增益区域包括由多个量子阱层组成的量子阱。在该量子阱和形成在垂直腔周围的外壳部分之间形成横向p-n结。通过向横向p-n结施加正向偏压，在多增益区域中产生光子。版权所有（C）2007，JPO＆INPIT

68. 发明专利

JP2006190976A External resonator type surface light-emitting laser element having a plurality of quantum wells 审中-公开
标题翻译：具有多个量子阱的外部共振器型表面发光激光元件
公开(公告)号：JP2006190976A
公开(公告)日：2006-07-20
申请号：JP2005313474
申请日：2005-10-27
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIN TAKU
IPC分类号： H01S5/183
CPC分类号： H01S5/18311 , B82Y20/00 , H01S3/109 , H01S5/141 , H01S5/18383 , H01S5/305 , H01S5/3054 , H01S5/3095 , H01S5/3406 , H01S5/34313 , H01S5/34353
摘要： PROBLEM TO BE SOLVED: To provide a high-output surface light-emitting laser element reusing electrons and positive holes by arranging a tunnel junction between quantum wells.
SOLUTION: In the laser element having an active layer where a plurality of quantum wells and barriers are laminated repeatedly, a tunnel junction is inserted into the barrier between the quantum wells.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过在量子阱之间布置隧道结来提供重新使用电子和正空穴的高输出表面发光激光器元件。解决方案：在具有反复层叠多个量子阱和屏障的有源层的激光元件中，在量子阱之间的势垒中插入隧道结。版权所有（C）2006，JPO＆NCIPI

69. 发明专利

JP3619155B2 The surface-emitting laser device, a method of manufacturing the same, and a method of driving the same 有权
公开(公告)号：JP3619155B2
公开(公告)日：2005-02-09
申请号：JP2001008878
申请日：2001-01-17
申请人：キヤノン株式会社
发明人：幸生古川
IPC分类号： H01S5/042 , H01S5/183
CPC分类号： H01S5/18397 , H01S5/0427 , H01S5/18311 , H01S5/18333 , H01S5/18341 , H01S5/18358 , H01S5/18383 , H01S5/423

70. 发明专利

JP2004253803A Organic vertical resonator laser device 审中-公开
公开(公告)号：JP2004253803A
公开(公告)日：2004-09-09
申请号：JP2004041428
申请日：2004-02-18
申请人： Eastman Kodak Co , イーストマンコダックカンパニー
发明人： KAHEN KEITH B , LEBENS JOHN A
IPC分类号： H01S3/16 , H01S3/08 , H01S3/091 , H01S3/14 , H01S5/04 , H01S5/183 , H01S5/30 , H01S5/36 , H01S5/42
CPC分类号： H01S5/36 , H01S5/041 , H01S5/18383 , H01S5/423 , H01S2301/173
摘要： PROBLEM TO BE SOLVED: To provide an organic vertical resonator laser that improves linear laser output response and reduces the problem of spectral linewidth being widened. SOLUTION: This organic system vertical resonator laser device comprises (a) a substrate, (b) a bottom dielectric stack that reflects light covering the range of the specified wavelength, (c) an organic active region that generates laser beams, (d) an upper dielectric stack that reflects light covering the range of the specified wavelength arranged with some distance from the bottom dielectric stack, and (e) a transparent heat-transfer layer arranged either between the bottom dielectric stack and the organic active region or between the upper dielectric stack and the organic active region, or else transparent heat-transfer layers arranged in both locations as stated in the above. COPYRIGHT: (C)2004,JPO&NCIPI

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