专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2014150225A Semiconductor light-emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2014150225A
公开(公告)日：2014-08-21
申请号：JP2013019575
申请日：2013-02-04
申请人： Fuji Xerox Co Ltd , 富士ゼロックス株式会社
发明人： KOJIMA TOMOAKI , YOSHIKAWA MASAHIRO , YAMAMOTO MASACHIKA , UENO OSAMU , YUKAWA KOHEI
IPC分类号： H01L33/20 , H01L33/10 , H01S5/183
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which can inhibit the occurrence of a short circuit even when a paste bonding material envelops lateral faces where a semiconductor layer is exposed.SOLUTION: An LED 100 comprises: a semiconductor layer including an n-type semiconductor layer 104 and a p-type semiconductor layer 106 which are formed on a semi-insulating substrate 102; first trenches 150 which penetrate from a surface of the p-type semiconductor layer 106 to the substrate 102 and which is formed to surround a partial region of the semiconductor layer; a light-emitting region P provided on at least a part of region including the n-type semiconductor layer 104 and the p-type semiconductor layer 106 in a part of the semiconductor layer, which is surrounded by the first trenches 150; an n-contact electrode 114 connected to the n-type semiconductor layer 104 at the part of the semiconductor layer, which is surrounded by the first trenches 150; and a p-contact electrode 116 connected to the p-type semiconductor layer 106.
摘要翻译：要解决的问题：提供一种半导体发光元件，即使当膏状粘合材料包围半导体层暴露的侧面时也能够抑制短路的发生。解决方案：LED100包括：半导体层，包括：形成在半绝缘基板102上的n型半导体层104和p型半导体层106; 第一沟槽150，其从p型半导体层106的表面穿透到衬底102，并且形成为围绕半导体层的部分区域; 设置在由第一沟槽150包围的半导体层的一部分中的包括n型半导体层104和p型半导体层106的区域的至少一部分上的发光区域P; 在由半导体层的被第一沟槽150包围的部分处连接到n型半导体层104的n型接触电极114; 以及连接到p型半导体层106的p型接触电极116。

2. 发明专利

JP2014093463A Surface emitting semiconductor laser array device, light source and light source module 有权
标题翻译：表面发射半导体激光阵列器件，光源和光源模块
公开(公告)号：JP2014093463A
公开(公告)日：2014-05-19
申请号：JP2012244089
申请日：2012-11-06
申请人： Fuji Xerox Co Ltd , 富士ゼロックス株式会社
发明人： YAMAMOTO MASACHIKA , YOSHIKAWA MASAHIRO , KOJIMA TOMOAKI , YUKAWA KOHEI , NAKAYAMA HIDEO , UENO OSAMU
IPC分类号： H01S5/183
摘要： PROBLEM TO BE SOLVED: To provide a surface emitting semiconductor laser array device, a light source and a light source module, which can achieve a high density and an enhanced life.SOLUTION: A surface emitting semiconductor laser array device 10 comprises a plurality of VCSEL element arranged on a substrate 100 in a matrix in a plane. The VCSEL elements in a column direction in an island region Sare connected in parallel to an electrode pad 130 on an anode side. The VCSEL element in the column direction in an island region Sare connected in parallel to an electrode pad 140 on a cathode side. Intermediate metal wiring 150 includes a comb part which extends from a part extending in the column direction in a first row direction and a finger part which extends in a second row direction opposite to the first row direction. The comb part is electrically connected to n-side metals of the VCSEL elements and the finger part is electrically connected to p-side metals of the VCSEL elements thereby to serially and parallely connect the VCSEL elements arranged in a matrix with each other.
摘要翻译：要解决的问题：提供可以实现高密度和增加寿命的表面发射半导体激光器阵列器件，光源和光源模块。解决方案：表面发射半导体激光器阵列器件10包括多个VCSEL 元件以平面中的矩阵布置在基板100上。岛状区域的列方向的VCSEL元件与阳极侧的电极焊盘130并联连接。岛状区域的列方向上的VCSEL元件与阴极侧的电极焊盘140并联连接。中间金属布线150包括从沿列方向延伸的部分沿第一行方向延伸的梳状部分和沿与第一行方向相反的第二行方向延伸的指状部分。梳状部分电连接到VCSEL元件的n侧金属，并且指状部分电连接到VCSEL元件的p侧金属，从而将以矩阵排列的VCSEL元件串联和平行连接。

3. 发明专利

JP2011151293A Surface emission semiconductor laser, surface emission semiconductor laser device, optical transmission device, and information processor 审中-公开
标题翻译：表面发射半导体激光器，表面发射半导体激光器件，光传输器件和信息处理器
公开(公告)号：JP2011151293A
公开(公告)日：2011-08-04
申请号：JP2010012993
申请日：2010-01-25
申请人： Fuji Xerox Co Ltd , 富士ゼロックス株式会社
发明人： YOSHIKAWA MASAHIRO , NAKAYAMA HIDEO
IPC分类号： H01S5/183
CPC分类号： H01S5/18338 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/18313 , H01S5/18347 , H01S5/1835 , H01S5/18355 , H01S5/18358
摘要： PROBLEM TO BE SOLVED: To provide a surface emission semiconductor laser capable of providing basic transverse mode oscillation subjected to polarization control.
SOLUTION: A VCSEL 10 includes: an n-type GaAs substrate 100; an n-type lower DBR 102 formed on the substrate 100; an active region 104; a p-type upper DBR 106 formed on the active region; a p-type current constriction layer 108 formed in the upper DBR 106; a p-side electrode 112 electrically connected to the upper DBR 106; and an n-side electrode 120. An ellipsoidal conductive region 108B having a long axis and a short axis is formed in the current constriction layer 108, and an opening 112A for specifying a light emission opening is formed on the p-side electrode 112. The diameter in the longitudinal direction of the opening 112A is smaller than the length of the long axis of the conductive region 108B.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够提供进行极化控制的基本横模振荡的表面发射半导体激光器。解决方案：VCSEL 10包括：n型GaAs衬底100; 形成在基板100上的n型下DBR102; 有源区域104; 形成在有源区上的p型上DBR 106; 形成在上DBR 106中的p型电流收缩层108; 电连接到上DBR 106的p侧电极112; 和n侧电极120.在电流收缩层108中形成具有长轴和短轴的椭圆形导电区108B，并且在p侧电极112上形成用于指定发光开口的开口112A。开口112A的长度方向的直径小于导电区域108B的长轴的长度。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2009194229A Semiconductor light-emitting device and fabrication method therefor 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：JP2009194229A
公开(公告)日：2009-08-27
申请号：JP2008034958
申请日：2008-02-15
申请人： Fuji Xerox Co Ltd , 富士ゼロックス株式会社
发明人： KONDO TAKASHI , YAMAMOTO MASACHIKA , YOSHIKAWA MASAHIRO
IPC分类号： H01S5/022 , H01S5/183
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device which can mount a reduced semiconductor light-emitting element and which can operate stably under high temperature and high humidity.
SOLUTION: A semiconductor light-emitting device 100 includes a VCSEL 120 that emits a laser beam, a glass substrate 140 for mounting the VCSEL 120, and a resin 150 for sealing the periphery of the VCSEL 120 on the glass substrate 140. The p-side electrode 122 of the VCSEL 120 is connected to a transparent electrode 142, and the n-side electrode 124, exposed from the resin 150, is connected to a wiring pattern 144 on the glass substrate by a bonding wire 160. A laser beam from the VCSEL 120 is emitted to the outside through the glass substrate 140.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种半导体发光装置，其可以安装减少的半导体发光元件，并且可以在高温和高湿度下稳定地操作。解决方案：半导体发光器件100包括发射激光束的VCSEL 120，用于安装VCSEL 120的玻璃基板140和用于密封玻璃基板140上的VCSEL 120的周边的树脂150。 VCSEL120的p侧电极122与透明电极142连接，从树脂150露出的n侧电极124通过接合线160与玻璃基板上的布线图案144连接。来自VCSEL 120的激光束通过玻璃基板140发射到外部。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2008098335A Vertical cavity surface emitting laser diode and its manufacturing method 有权
标题翻译：垂直孔表面发射激光二极管及其制造方法
公开(公告)号：JP2008098335A
公开(公告)日：2008-04-24
申请号：JP2006277244
申请日：2006-10-11
申请人： Fuji Xerox Co Ltd , 富士ゼロックス株式会社
发明人： YAMAMOTO MASACHIKA , YOSHIKAWA MASAHIRO , KONDO TAKASHI
IPC分类号： H01S5/183
摘要： PROBLEM TO BE SOLVED: To provide a VCSEL capable of stably operating in a wide temperature range.
SOLUTION: The VCSEL has a substrate 102 with an n-type lower part DBR 106, an active layer 108b, a current narrow layer 110, a p-type upper part DBR 112, and a p-type GaAs contact layer 114 laminated thereon and a p-side upper electrode 130 including an opening part 132 for regulating an output region of a laser beam formed on the contact layer 114. The DBR comprises an Al
x Ga
1-x As layer (0≤x≤1) and Al
y Ga
1-y As layer (0≤y≤1, x x Ga
1-x As layer and a band gap energy of the active layer.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够在宽温度范围内稳定工作的VCSEL。解决方案：VCSEL具有具有n型下部DBR 106，有源层108b，电流窄层110，p型上部DBR 112和p型GaAs接触层114的衬底102 层叠在其上的p侧上部电极130和包括用于调节形成在接触层114上的激光束的输出区域的开口部分132的p侧上部电极130.DBR包括AlS / x As层（0≤x≤1）和Al y Ga 1-y As层（0≤y≤1，x x 1-x As层的带隙能量之间具有0.1eV≤S≤0.3eV的差S，活性层的能量。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2004200209A Method of forming conductive pattern of electrode, etc., surface light emitting type semiconductor laser using the same, and its manufacturing method 审中-公开
标题翻译：形成电极导电图案的方法，等等，使用其的表面发光型半导体激光器及其制造方法
公开(公告)号：JP2004200209A
公开(公告)日：2004-07-15
申请号：JP2002363484
申请日：2002-12-16
申请人： Fuji Xerox Co Ltd , 富士ゼロックス株式会社
发明人： YOSHIKAWA MASAHIRO
IPC分类号： H01L21/28 , H01L21/00 , H01L21/3065 , H01S5/00 , H01S5/042 , H01S5/183 , H01S5/20 , H01S5/343
CPC分类号： H01S5/0425 , H01L2224/18 , H01S5/0282 , H01S5/18311 , H01S5/2081 , H01S2301/176
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a conductive pattern of an electrode, wiring, etc. without imparting a damage to the surface of a compound semiconductor layer as much as possible.
SOLUTION: The method of forming the conductive pattern of the electrode, the wiring, etc. includes a step for forming a lower resist layer 101 on a GaAs substrate 100, a step for forming an upper resist layer 102 having a resistance against plasma ashing on the lower resist layer 101, a step for forming an opening pattern 103 in the upper resist layer 102, a step for exposing the GaAs substrate from an opening 104 by forming the opening 104 in the lower resist layer by oxygen plasma ashing the lower resist layer with the opening pattern 103 as a mask, a step for covering the entire surface of the substrate with a metal film 105, and a step for forming a metal pattern 106 by a lifting-off treatment.
COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：解决的问题：提供一种形成电极，布线等的导电图案的方法，而不会尽可能地对化合物半导体层的表面造成损害。解决方案：形成电极，布线等的导电图案的方法包括在GaAs衬底100上形成下抗蚀剂层101的步骤，用于形成具有抗电阻的上抗蚀剂层102的步骤在下抗蚀剂层101上的等离子体灰化，在上抗蚀剂层102中形成开口图案103的步骤，通过用氧等离子体灰化形成下抗蚀剂层中的开口104从开口104暴露GaAs衬底的步骤具有开口图案103作为掩模的下部抗蚀剂层，用金属膜105覆盖基板的整个表面的步骤，以及通过提升处理形成金属图案106的步骤。版权所有（C）2004，JPO＆NCIPI

7. 发明专利

JP2012049557A Surface-emitting type semiconductor laser, optical device, light irradiation device, information processing device, optical transmitter, optical space transmission device, and optical transmission system 有权
标题翻译：表面发射型半导体激光器，光学器件，光照射装置，信息处理装置，光学发射器，光学空间传输装置和光传输系统
公开(公告)号：JP2012049557A
公开(公告)日：2012-03-08
申请号：JP2011232386
申请日：2011-10-24
申请人： Fuji Xerox Co Ltd , 富士ゼロックス株式会社
发明人： YAMAMOTO MASACHIKA , YOSHIKAWA MASAHIRO , KONDO TAKASHI
IPC分类号： H01S5/187
摘要： PROBLEM TO BE SOLVED: To provide a VCSEL(Vertical-Cavity Surface-Emitting Laser diode) that enables lateral mode control while reducing an electrical resistance of a current path.SOLUTION: A VCSEL 10 has: a lower DBR(Distributed Bragg Reflector) 14 including a semiconductor oxidized layer 32 formed on a substrate 12 and whose constituent element is Al; an active region 16; and an upper DBR 18 processed on a post P. A plurality of holes 30 that reach the semiconductor oxidized layer 32 from a surface of the lower DBR 14 are formed to the lower DBR 14 at the outside of the post P. An oxidation region 34 selectively oxidized from a side surface of the hole 30 is formed to the semiconductor oxidized layer 32. A current path K1 by a non-oxidation region (a conductive region) surrounded by the oxidation region 34 and a current path K2 sneaking around the oxidation region 34 are formed to the lower DBR 14.
摘要翻译：要解决的问题：提供一种VCSEL（垂直腔表面发射激光二极管），其能够在减小电流路径的电阻的同时进行横向模式控制。解决方案：VCSEL10具有：下部DBR（分布式布拉格反射器）14，其包括形成在基板12上并且其构成元件为Al的半导体氧化层32; 活动区域16; 以及在柱P上处理的上DBR 18.在柱P的外侧，向下DBR14形成从下DBR14的表面到达半导体氧化层32的多个孔30.氧化区34 由半导体氧化层32形成从孔30的侧面选择性地氧化的电流路径K1。由氧化区域34包围的非氧化区域（导电区域）和围绕氧化区域的电流路径K2的电流路径K1 34形成于下DBR14上。（C）2012，JPO＆INPIT

8. 发明专利

JP2011124314A Surface-emitting semiconductor laser, surface-emitting semiconductor laser device, optical transmission device, and information processing device 审中-公开
标题翻译：表面发射半导体激光器，表面发射半导体激光器件，光学传输器件和信息处理器件
公开(公告)号：JP2011124314A
公开(公告)日：2011-06-23
申请号：JP2009279328
申请日：2009-12-09
申请人： Fuji Xerox Co Ltd , 富士ゼロックス株式会社
发明人： TAKEDA KAZUTAKA , YOSHIKAWA MASAHIRO , MATSUSHITA KAZUMASA
IPC分类号： H01S5/187 , H01S5/343
CPC分类号： H01S5/18311 , H01S5/005 , H01S5/02212 , H01S5/0425 , H01S5/18391 , H01S2301/166 , H01S2301/176
摘要： PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser that achieves high-output fundamental transverse mode oscillation by suppressing high-order transverse mode oscillation. SOLUTION: The surface-emitting semiconductor laser 10 includes a substrate 100, an n-type lower DBR 102, an active region 104, a p-type upper DBR 106, a mesa M formed on the substrate, a current narrowing layer 108 formed inside the mesa M and having a conductive region 108B surrounded by a selectively-oxidized oxidization region 108A, an annular p-side electrode 110 formed at the top of the mesa M so as to define a light-emission port 110A, a first insulating film 112 having a first refractive index and covering the light-emission port 110A, and a circular second insulating film 118 having a second refractive index larger than the first refractive index and formed on the first insulating film. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供通过抑制高阶横模振荡来实现高输出基本横模振荡的表面发射半导体激光器。解决方案：表面发射半导体激光器10包括基板100，n型下DBR 102，有源区104，p型上DBR 106，形成在基板上的台面M，电流变窄层 108，其形成在台面M的内侧，具有由选择氧化的氧化区域108A包围的导电区域108B，形成在台面M的顶部的环状p侧电极110，以限定发光口110A，第一具有第一折射率并覆盖发光口110A的绝缘膜112和形成在第一绝缘膜上的第二折射率大于第一折射率的圆形第二绝缘膜118。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2008192733A Surface light-emitting semiconductor laser, method for manufacturing the same, optical apparatus, optical radiating apparatus, information processing apparatus, optical transmitting apparats, optical space transmitting apparatus and optical transmitting system 有权
标题翻译：表面发光半导体激光器，其制造方法，光学装置，光学放大装置，信息处理装置，光学发射装置，光学空间传输装置和光学发射系统
公开(公告)号：JP2008192733A
公开(公告)日：2008-08-21
申请号：JP2007024089
申请日：2007-02-02
申请人： Fuji Xerox Co Ltd , 富士ゼロックス株式会社
发明人： YOSHIKAWA MASAHIRO , YAMAMOTO MASACHIKA , KONDO TAKASHI
IPC分类号： H01S5/187
CPC分类号： H01S5/18333 , B82Y20/00 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/18311 , H01S5/18358 , H01S5/3432 , H01S2301/18
摘要： PROBLEM TO BE SOLVED: To provide a surface light-emitting semiconductor laser for easily controlling a spreading angle.
SOLUTION: The surface light-emitting semiconductor laser includes an n-type lower DBR 106, an active region 108, a p-type upper DBR 112 on the active region 108, and a current constriction layer 110 provided in the vicinity of the active region 108. The mesa P is formed to expose the side surface of the current constriction layer 110. The current constriction layer 110 includes an AlAs layer 110a and an Al
0.88 Ga
0.12 As layer 110b formed in the more active region side than the AlAs layer and a total optical film thickness is equal to λ/4, when the oscillation wavelength of the laser beam is defined as λ. The AlAs layer 110a and the Al
0.88 Ga
0.12 As layer 110b are simultaneously oxidized selectively from the side surface of the mesa P.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于容易地控制扩展角的表面发光半导体激光器。解决方案：面发光半导体激光器包括有源区108上的n型下DBR 106，有源区108，p型上DBR 112和设置在有源区108附近的电流收缩层110 有源区域108.形成台面P以暴露电流收缩层110的侧表面。电流收缩层110包括AlAs层110a和AlS层110a， SB>当将激光束的振荡波长定义为λ时，形成在比AlAs层更有活性的区域侧的层110b和总光学膜厚度等于λ/ 4。 AlAs层110a和Al 0.88 > As层110b从台面P的侧面选择性地同时氧化。（C）2008， JPO＆INPIT

10. 发明专利

JP2006278572A Multi-spot surface emitting laser and its manufacturing method 有权
标题翻译：多点表面发射激光及其制造方法
公开(公告)号：JP2006278572A
公开(公告)日：2006-10-12
申请号：JP2005093169
申请日：2005-03-28
申请人： Fuji Xerox Co Ltd , 富士ゼロックス株式会社
发明人： YOSHIKAWA MASAHIRO , MIYAMOTO YASUMASA , SAKAMOTO AKIRA
IPC分类号： H01S5/183
摘要： PROBLEM TO BE SOLVED: To provide a multi-spot surface emitting laser capable of obtaining a high output while keeping a beam profile in a single peak.
SOLUTION: The VCSEL 10 includes at least two mesas 20 and 30 on a substrate. Diameters D1 and D2 of oxidation apertures 112 (conductive region) of the mesas 20 and 30 are equal. Such a relation is satisfied that the emission opening diameter P2 of the mesa 30 is smaller than the emission opening diameter P1 of the mesa 20, and that the emission opening P2 is smaller than D2. Thus, the combined beam profile is close to a single peak, and accuracy as a light source for light transmission can be improved as a result.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够获得高输出的多点表面发射激光器，同时将光束轮廓保持在单个峰值。解决方案：VCSEL 10在衬底上包括至少两个台面20和30。台面20和30的氧化孔112（导电区域）的直径D1和D2相等。这样的关系满足台面30的排出口直径P2小于台面20的排出口径P1，排出口P2小于D2。因此，组合的光束轮廓接近单个峰值，作为光传输的光源的精度可以得到改善。版权所有（C）2007，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式