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2. 发明专利

JP5322444B2 Measuring device and measuring system 有权
公开(公告)号：JP5322444B2
公开(公告)日：2013-10-23
申请号：JP2008013945
申请日：2008-01-24
申请人：オスラムオプトセミコンダクターズゲゼルシャフトミットベシュレンクテルハフツングOsram Opto Semiconductors GmbH
发明人：ミュラーマルティン
IPC分类号： G01S7/484
CPC分类号： G01S17/10 , G01S7/4814 , G01S7/4818 , G01S17/58 , G01S17/87 , G01S17/936 , H01S5/005 , H01S5/0071 , H01S5/026 , H01S5/1021 , H01S5/18383 , H01S5/18397 , H01S5/3095 , H01S5/423
摘要： The arrangement has a radiation unit with a surface emitting semiconductor device (1). The semiconductor device has a semiconductor body (2) with active regions (4a, 4b), which are suitable for producing radiation. The active regions are placed at a distance from each other in vertical direction. A tunnel junction (5) is monolithically integrated in the semiconductor body between the active regions. A detection unit detects reflected radiation. An evaluation circuit is equipped for controlling the radiation and detection units and for processing a detection result of the detection unit.

3. 发明专利

JP2012038882A Surface emitting laser, surface emitting laser array, display device using surface emitting laser array as light source, printer head, and printer 有权
标题翻译：表面发射激光，表面发射激光阵列，使用表面发射激光阵列作为光源，打印机头和打印机的显示设备
公开(公告)号：JP2012038882A
公开(公告)日：2012-02-23
申请号：JP2010177052
申请日：2010-08-06
申请人： Canon Inc , キヤノン株式会社
发明人： SEKIGUCHI YOSHINOBU
IPC分类号： H01S5/183
CPC分类号： H01S5/187 , B82Y20/00 , H01S5/0014 , H01S5/0425 , H01S5/183 , H01S5/18311 , H01S5/18383 , H01S5/227 , H01S5/3407 , H01S5/34313 , H01S5/34326 , H01S5/423
摘要： PROBLEM TO BE SOLVED: To provide a surface emitting laser having a periodic gain structure capable of improving laser characteristics by improving homogeneity of carrier implantation into a plurality of active regions and carrier confinement therein.SOLUTION: The surface emitting laser includes a first DBR layer, a first clad layer, active regions, a second clad layer, a current constriction structure, and a second DBR layer. The active regions have a multiple-quantum well structure, and the surface emitting laser has a periodic gain structure in which the active regions are disposed at a plurality of positions at which light intensity of a gain region is maximum, and also a structure in which an interbarrier layer is disposed between the active regions. An energy level of a lower end of a conduction band energy of the interbarrier layer is set to be an energy level higher than the energy level of a lower end of a conduction band energy of a barrier layer in the multiple-quantum well structure of the active regions at the positions.
摘要翻译：要解决的问题：提供具有能够通过提高载流子注入到多个有源区域中的均匀性并且在其中进行载流子限制来提高激光特性的周期性增益结构的表面发射激光器。解决方案：表面发射激光器包括第一DBR层，第一覆盖层，有源区，第二覆层，电流限制结构和第二DBR层。有源区域具有多量子阱结构，表面发射激光器具有周期性增益结构，其中有源区域设置在增益区域的光强度最大的多个位置，以及其中隔离层设置在有源区之间。将隔离层的导带能量的下端的能级设定为高于多量子阱结构中的阻挡层的导带能量的下端的能级的能级活跃地区的职位。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2004282012A Organic laser attachable to external stimulation beam light source 审中-公开
标题翻译：有机激光可连接外部刺激光束光源
公开(公告)号：JP2004282012A
公开(公告)日：2004-10-07
申请号：JP2003356419
申请日：2003-10-16
申请人： Eastman Kodak Co , イーストマンコダックカンパニー
发明人： PATTON DAVID L , MANICO JOSEPH A , COVANNON EDWARD , SPOONHOWER JOHN P
IPC分类号： H01S3/16 , H01S5/022 , H01S5/04 , H01S5/183 , H01S5/36 , H01S5/42
CPC分类号： H01S5/18383 , H01S5/02252 , H01S5/041 , H01S5/36 , H01S5/423
摘要： PROBLEM TO BE SOLVED: To provide a convenient method of attaching an organic cavity laser device to an incoherent light source and dynamically aligning.
SOLUTION: A vertical cavity organic laser device is provided with a bottom dielectric layer receiving an stimulation beam to transmit it and reflecting the laser beam exceeding the wavelength in a predetermined range, an organic active layer receiving the stimulation beam transmitted through the dielectric layer to emit the laser beam, and a top dielectric layer reflecting the transmitted stimulation beam and the laser beam from the organic active layer to return them to the organic active layer. There are provided an organic laser cavity generating laser beam by the combination of the bottom and top dielectric layers and the organic active layer, an external stimulation beam light source optically stimulating the organic laser cavity, and a positioner arranging the organic laser cavity in a space to the external stimulation beam light source.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供将有机腔激光器件附着到非相干光源并且动态对准的方便的方法。解决方案：垂直腔有机激光器件设置有接收刺激光束的底部电介质层，以传输它并将超过波长的激光束反射到预定范围内，接收透过电介质的刺激光束的有机活性层层以发射激光束，以及顶部介电层，其反射透射的刺激光束和来自有机活性层的激光束，以将它们返回到有机活性层。提供了通过底部和顶部电介质层和有机活性层的组合产生激光束的有机激光腔，光学刺激有机激光腔的外部刺激束光源以及将有机激光腔布置在空间中的定位器到外部刺激束光源。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2004146833A Electrically pumped vertical cavity surface-emitting laser(vcsel) having a plurality of active regions 审中-公开
公开(公告)号：JP2004146833A
公开(公告)日：2004-05-20
申请号：JP2003360929
申请日：2003-10-21
申请人： Agilent Technol Inc , アジレント・テクノロジーズ・インクAgilent Technologies, Inc.
发明人： BOUR DAVID P , MILLER JEFFREY N , LESTER STEVE , ROBBINS VIRGINIA
IPC分类号： H01S5/042 , H01S5/183 , H01S5/40
CPC分类号： H01S5/18341 , B82Y20/00 , H01S5/0425 , H01S5/18308 , H01S5/18311 , H01S5/1833 , H01S5/18358 , H01S5/18366 , H01S5/18369 , H01S5/18383 , H01S5/18397 , H01S5/3095 , H01S5/34306 , H01S5/426 , H01S2301/176
摘要： PROBLEM TO BE SOLVED: To provide an effective electric pumping type VCSEL, which can substitute for an optically pumped type VCSEL having a plurality of activation regions. SOLUTION: The electrically pumped VCSEL includes a pair of distributed Bragg reflectors(DBR), an optical cavity located between DBR, active regions located in the optical cavity, and p-i-n junction structure of the equal number to the active regions. Each active region makes up one intrinsic(i) layer, corresponding to the p-i-n junction structure. Electrical pumping is carried out in the active region, and the active region can be located at the antinodes of a standing wave in the optical cavity. COPYRIGHT: (C)2004,JPO

6. 发明专利

JP2004140371A Wavelength tunable organic vcsel system 审中-公开
公开(公告)号：JP2004140371A
公开(公告)日：2004-05-13
申请号：JP2003356362
申请日：2003-10-16
申请人： Eastman Kodak Co , イーストマンコダックカンパニー
发明人： SPOONHOWER JOHN P , AGOSTINELLI JOHN A , BRIAN E KURUSHUUITTSU , KAHEN KEITH B , LEBENS JOHN A
IPC分类号： G02B5/26 , G02B5/28 , H01S3/05 , H01S3/0933 , H01S3/10 , H01S3/105 , H01S3/107 , H01S3/17 , H01S5/04 , H01S5/06 , H01S5/14 , H01S5/183 , H01S5/30 , H01S5/36
CPC分类号： H01S5/18366 , G02B26/001 , H01S3/0933 , H01S3/168 , H01S5/041 , H01S5/141 , H01S5/18383 , H01S5/36
摘要： PROBLEM TO BE SOLVED: To improve control of a laser beam mode and wavelengths in an organic tunable VCSEL (vertical cavity surface emitting lasers) while maintaining a great advantage in the tuning range of the organic tunable VCSEL. SOLUTION: A system is provided for mechanically tuning the wavelengths of light that has been emitted from an organic laser cavity device. The system includes a multi-layered film structure 300 which is pumped by an incoherent source of photons, and a micro-electromechanical mirror assembly 310 proximate to the multi-layered film structure 300, which varies the cavity length of the organic laser cavity device. COPYRIGHT: (C)2004,JPO

7. 发明专利

JP2004087615A Manufacturing method of semiconductor laser 审中-公开
公开(公告)号：JP2004087615A
公开(公告)日：2004-03-18
申请号：JP2002244090
申请日：2002-08-23
申请人： Fujitsu Ltd , 富士通株式会社
发明人： HATORI NOBUAKI
IPC分类号： H01S5/343 , H01L21/00 , H01L21/203 , H01S5/12 , H01S5/183 , H01S5/22 , H01S5/34
CPC分类号： B82Y20/00 , H01S5/1228 , H01S5/1231 , H01S5/18319 , H01S5/18383 , H01S5/22 , H01S5/341 , H01S5/3412 , H01S2304/02
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor laser with which high-density uniform quantum dots are formed, the gain is increased and chirping hardly occurs even in direct modulation.
SOLUTION: An AlGaAs clad layer 52 is formed on a GaAs semiconductor wafer and an i-type GaAs layer 53 is formed thereon. Next, stripes of grooves 54 are formed on the GaAs layer 53 by photo-lithography, and an InAs layer is then formed by MBE. At such a time, edges of projecting portions are smoothly deformed with elevation of a wafer substrate to nearly eliminate the flat portions. Then, InAs is almost not deposited on the slopes of the projecting portions, S-K mode growth of InAs is performed on the bottoms of the grooves 54, and mutually isolated InAs islands are formed. The InAs islands are covered with i-type GaAs to form the quantum dots. Thus, a cyclic structure of the quantum dots is formed by using the grooves 54.
COPYRIGHT: (C)2004,JPO

8. 发明专利

JP5735765B2 面発光レーザ、面発光レーザアレイ、面発光レーザアレイを光源とする表示装置、プリンタヘッドおよびプリンタ有权
标题翻译：的面发光激光器，表面发射激光器阵列，根据表面发射激光器阵列光源中，打印机头和打印机的显示装置
公开(公告)号：JP5735765B2
公开(公告)日：2015-06-17
申请号：JP2010177052
申请日：2010-08-06
申请人：キヤノン株式会社
发明人：関口芳信
IPC分类号： H01S5/183
CPC分类号： H01S5/187 , B82Y20/00 , H01S5/0425 , H01S5/183 , H01S5/18383 , H01S5/34313 , H01S5/34326 , H01S5/423 , H01S5/0014 , H01S5/18311 , H01S5/227 , H01S5/3407

9. 发明专利

JP5355276B2 Surface-emitting laser 有权
公开(公告)号：JP5355276B2
公开(公告)日：2013-11-27
申请号：JP2009175352
申请日：2009-07-28
申请人：キヤノン株式会社
发明人：哲也竹内 , 芳信関口
IPC分类号： H01S5/183 , H01S5/343
CPC分类号： H01S5/18311 , H01S5/18383
摘要： A surface emitting laser is provided which can control a beam shape and can provide higher efficiency and higher power. The surface emitting laser includes a gain region that is provided between a first semiconductor multilayer film reflection mirror and a second semiconductor multilayer film reflection mirror, which are arranged so as to oppose to each other, and that has a first active layer and a second active layer. The surface emitting laser has a current constriction layer for constricting an electric current which is injected into the first active layer and the second active layer. The first active layer and the second active layer have different active layer structures from each other.

10. 发明专利

JP5311710B2 A method of manufacturing a semiconductor components and semiconductor components 有权
公开(公告)号：JP5311710B2
公开(公告)日：2013-10-09
申请号：JP2005241702
申请日：2005-08-23
申请人：オスラムオプトセミコンダクターズゲゼルシャフトミットベシュレンクテルハフツングOsram Opto Semiconductors GmbH
发明人：ライルヴォルフガング , シュテークミュラーウルリヒ , アルブレヒトトニー , シュミットヴォルフガング
IPC分类号： H01S5/183 , H01S5/14
CPC分类号： H01S5/18388 , H01S3/109 , H01S5/0224 , H01S5/041 , H01S5/141 , H01S5/18383 , H01S5/4056
摘要： A semiconductor element comprises a curved mirror integrated into a monolithic semiconductor body (1). Preferably the curved mirror is a Bragg mirror and the semiconductor body is on a planar carrier (4). An independent claim is also included for a production process for the above.

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