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1. 发明专利

JP2017118153A 半導体レーザ装置組立体有权
公开(公告)号：JP2017118153A
公开(公告)日：2017-06-29
申请号：JP2017072071
申请日：2017-03-31
申请人：ソニー株式会社 , Sony Corp
发明人： KONO SHUNSUKE , KURAMOTO MASARU , KODA RINTARO
IPC分类号： H01S5/065 , H01S5/022 , H01S5/06 , H01S5/14 , H01S5/323 , H01S5/343 , H01S5/50
摘要：【課題】モード同期半導体レーザ素子から出射され、半導体光増幅器に入射したレーザ光のパルス時間幅を圧縮するためのパルス圧縮器が不要である半導体レーザ装置組立体を提供する。【解決手段】半導体レーザ装置組立体は、モード同期半導体レーザ素子10、及び、モード同期半導体レーザ素子10から出射されたレーザ光が入出射される分散補償光学系110から構成されたモード同期半導体レーザ素子組立体、並びに、モード同期半導体レーザ素子組立体から出射されたレーザ光を増幅する、III−V族窒化物系半導体層の積層構造体から成る半導体光増幅器210から構成されており、モード同期半導体レーザ素子組立体から出射されたレーザ光に対して光スペクトルを整形する光スペクトル整形手段114を更に備えており、モード同期半導体レーザ素子組立体から出射されたレーザ光は、複数回、光スペクトル整形手段114を通過し、半導体光増幅器210に入射する。【選択図】図1

2. 发明专利

JP2013074001A Light-emitting element and manufacturing method of the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：JP2013074001A
公开(公告)日：2013-04-22
申请号：JP2011210354
申请日：2011-09-27
申请人： Sony Corp , ソニー株式会社
发明人： KURAMOTO MASARU , KODA RINTARO , WATANABE HIDEKI
IPC分类号： H01S5/223
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/141 , H01S5/2009 , H01S5/2031 , H01S5/209 , H01S5/305 , H01S5/3063 , H01S5/309 , H01S5/3211 , H01S5/3213 , H01S5/34333 , H01S5/50 , H01S2301/166 , H01S2301/176
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting element having a high output, which can radiate light beams having a single mode.SOLUTION: The light-emitting element comprises: (a) a laminated structure 20 including a first compound semiconductor layer 21, an active layer 23 and a second compound semiconductor layer 22 sequentially laminated on a base substance 20'; (b) a second electrode 32; and (c) a first electrode 31. The first compound semiconductor layer 21 has a lamination structure of a first clad layer 121A and a first optical guide layer 121B laminated from a base substance side. The laminated structure has a ridge stripe structure 20A including a part 121B' in a thickness direction of the second compound semiconductor layer 22, the active layer 23 and the first optical guide layer. When assuming that a thickness of the first optical guide layer 121B is tand a thickness of the part 121B of the first optical guide layer, which is included in the ridge stripe structure 20A is t', the following relational expressions are satisfied: 6×10m
摘要翻译：要解决的问题：提供具有高输出的发光元件，其可以辐射具有单一模式的光束。解决方案：发光元件包括：（a）包括依次层压在基体20'上的第一化合物半导体层21，有源层23和第二化合物半导体层22的层叠结构20; （b）第二电极32; 和（c）第一电极31.第一化合物半导体层21具有从基体侧层叠的第一包层121A和第一导光层121B的层叠结构。层叠结构具有在第二化合物半导体层22的厚度方向上具有部分121B'的脊条状结构20A，有源层23和第一导光层。当假设第一光导层121B的厚度为t 1 时，包括在脊条结构20A中的第一导光层的部分121B的厚度是t 1 '，满足以下关系式：6×10 - 7 m 1 ，0（m） 1 '≤0.5* t 1 。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2012195475A Semiconductor laser element assembly and method of driving the same 有权
标题翻译：半导体激光元件组件及其驱动方法
公开(公告)号：JP2012195475A
公开(公告)日：2012-10-11
申请号：JP2011058899
申请日：2011-03-17
申请人： Sony Corp , Tohoku Univ , ソニー株式会社 , 国立大学法人東北大学
发明人： OKI TOMOYUKI , KURAMOTO MASARU , KODA RINTARO , WATANABE HIDEKI , YOKOYAMA HIROYUKI
IPC分类号： H01S5/065
CPC分类号： H01S5/0602 , B82Y20/00 , H01S5/0425 , H01S5/0625 , H01S5/1064 , H01S5/3063 , H01S5/34333 , H01S2301/166
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser element assembly that can emit laser light with high power.SOLUTION: A semiconductor laser element assembly comprises a semiconductor laser element 10 and a light reflection device 70. A stacked structure constituting the semiconductor laser element 10 has a ridge stripe structure 56. Laser light is emitted from one edge face 57A of the ridge stripe structure 56, a part of the laser light is reflected by the light reflection device 70 and is returned to the semiconductor laser element 10, and the rest of the laser light is emitted from the light reflection device to the outside. In addition, the laser light is reflected at the other edge face 57B of the ridge stripe structure 56. When the minimum width of the ridge stripe structure is Wand the maximum width of the ridge stripe structure is W, the following relation is satisfied: 1
摘要翻译：要解决的问题：提供能够以高功率发射激光的半导体激光元件组件。解决方案：半导体激光元件组件包括半导体激光元件10和光反射装置70.构成半导体激光元件10的堆叠结构具有脊状条纹结构56.激光从一个边缘面57A发射脊条纹结构56，一部分激光被光反射装置70反射并返回到半导体激光元件10，其余的激光从光反射装置发射到外部。此外，激光在脊条结构56的另一边缘面57B处被反射。当脊条纹结构的最小宽度为W min 时，最大宽度脊条纹结构为W max ，满足以下关系：1 max / W min <3.3或6≤W max / W min ≤13.3。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2010050412A Surface-emitting semiconductor laser 有权
标题翻译：表面发射半导体激光器
公开(公告)号：JP2010050412A
公开(公告)日：2010-03-04
申请号：JP2008215775
申请日：2008-08-25
申请人： Sony Corp , ソニー株式会社
发明人： MASUI TAKESHI , ARAKIDA TAKAHIRO , KODA RINTARO , MAEDA OSAMU , OKI TOMOYUKI , SHIROKISHI NAOTERU
IPC分类号： H01S5/183
CPC分类号： H01S5/18336 , H01S5/0655 , H01S5/18311 , H01S5/18316 , H01S5/18358 , H01S2301/166
摘要： PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser that can make high output in a fundamental transverse mode while preventing oscillation in a high-order transverse mode.
SOLUTION: In the surface-emitting semiconductor laser, a transverse mode adjusting layer 20 is provided on a side of a substrate 10, that is, on a side opposite to a side where the laser is emitted. In the transverse mode adjusting layer 20, a reflectivity in an oscillating wavelength λ on a region opposite to a center region of a light-emitting region 13A is higher than that in the oscillating wavelength λ on a region opposite to an outer peripheral region of the light-emitting region 13A. Accordingly, light output in the fundamental transverse mode is not likely to be prevented by the transverse mode adjusting layer 20, thereby highly maintaining slope efficiency of the fundamental transverse mode.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在高横向模式下防止振荡的情况下能够实现基本横向模式的高输出的表面发射半导体激光器。解决方案：在表面发射半导体激光器中，横向模式调节层20设置在基板10的一侧，即在与激光发射侧相反的一侧。在横模式调整层20中，在与发光区域13A的中心区域相反的区域上的振荡波长λ的反射率高于在与发光区域13A的外周区域相反的区域的振荡波长λ的反射率发光区域13A。因此，横向模式调节层20不可能防止基本横模的光输出，从而高度保持基本横模的斜率效率。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2010034408A Semiconductor light-emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2010034408A
公开(公告)日：2010-02-12
申请号：JP2008196642
申请日：2008-07-30
申请人： Sony Corp , ソニー株式会社
发明人： KODA RINTARO , WATABE YOSHIAKI
IPC分类号： H01S5/22 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting element capable of defining a horizontal optical confinement property without depending physical property values too much.
SOLUTION: On a substrate 10, a lower clad layer 21, an active layer 22, an upper clad layer 23 and a contact layer 24 are formed in this order, and the upper part of the upper clad layer 23 and the contact layer 24 serve as a ridge waveguide 25. A multilayer reflection film 30 is formed by laminating sequentially a first thin film 31 and a second thin film 32 on both sides of the ridge waveguide 25 from the side surface side of the ridge waveguide 25.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在不依赖物理性能值的情况下限定水平光限制特性的发光元件。解决方案：在基板10上，依次形成下包层21，有源层22，上覆层23和接触层24，并且上覆层23的上部和触点层24用作脊状波导25.多个反射膜30通过从脊状波导25的侧面侧依次层叠脊状波导25的两侧的第一薄膜31和第二薄膜32而形成。 P>版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2007324313A Semiconductor light-emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：JP2007324313A
公开(公告)日：2007-12-13
申请号：JP2006151772
申请日：2006-05-31
申请人： Sony Corp , ソニー株式会社
发明人： KODA RINTARO , ARAKIDA TAKAHIRO , YAMAUCHI YOSHINORI , MASUI TAKESHI , YAMAGUCHI NORIHIKO
IPC分类号： H01L31/12 , H01L31/09 , H01S5/183
CPC分类号： H01S5/0264 , H01S5/0683 , H01S5/1078 , H01S5/18311 , H01S2301/18
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device, capable of reducing a detection level of amplified spontaneous emission light by a semiconductor photodetector, by selectively reflecting the amplified spontaneous emission light, thereby improving the light detection accuracy. SOLUTION: The semiconductor light emitting device includes a surface-emitting semiconductor laser 1, a filter 3, and the semiconductor photodetector 2. The surface-emitting semiconductor laser 1 includes an n-type DBR layer 12 to a p-type contact layer 17, stacked in this order, on a substrate 11. The filter 3 has transmittance characteristics where the transmissivity in a direction parallel to the optical axis of stimulated emission light (laminating direction) is higher than the transmissivity in a direction different from the optical axis of the light output from the laser 1. The semiconductor photodetector 2 has a light-absorbing layer 21 for absorbing part of the light which has transmitted through the filter 3. The filter 3 and the semiconductor photodetector 2 are formed superimposed with the surface-emitting semiconductor laser 1, in this order, on the surface of the p-type contact layer 17. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：为了提供能够通过选择性地反射放大的自发发射光来降低半导体光电检测器放大的自发发射光的检测水平的半导体发光装置，从而提高光检测精度。解决方案：半导体发光器件包括表面发射半导体激光器1，滤光器3和半导体光电检测器2.表面发射半导体激光器1包括n型DBR层12到p型接触层17依次层叠在基板11上。滤光器3具有透射率特性，其中沿与受激发光的光轴平行的方向的透射率（层叠方向）高于与光学方向不同的方向的透射率半导体光电检测器2具有用于吸收已经透射过滤器3的部分光的光吸收层21.滤光器3和半导体光电检测器2与表面 - 发光半导体激光器1依次形成在p型接触层17的表面上。（C）2008，JPO＆INPIT

7. 发明专利

JP2007207845A Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：JP2007207845A
公开(公告)日：2007-08-16
申请号：JP2006022428
申请日：2006-01-31
申请人： Sony Corp , ソニー株式会社
发明人： YAMAUCHI YOSHINORI , ARAKIDA TAKAHIRO , KODA RINTARO , YAMAGUCHI NORIHIKO , MASUI TAKESHI
IPC分类号： H01S5/026 , H01S5/18
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device where a detection level of natural radiated light by a semiconductor photodetector is reduced by reflecting natural radiated light at a high reflectivity, and optical detection precision can be more improved.
SOLUTION: The semiconductor light emitting device includes a surface light emitting semiconductor laser 1, a semiconductor photodetector 2, and an optical control layer 3. The surface light emitting semiconductor laser 1 has a substrate 10 and a semiconductor laminated structure 11 comprising a light emitting region 14A. The semiconductor photodetector 2 has a substrate 20 having a hole 20A in a region corresponding to a region comprising the light emitting region 14A, and a semiconductor laminated structure 21 having a light absorbing layer 22 absorbing part of light which is made incident. The optical control layer 3 is formed in a region corresponding to the peripheral region of the light emitting region 14A in the semiconductor laminated structure 11, and has an opening 3A in the region corresponding to the light emitting region 14A. The optical control layer 3 and the semiconductor photodetector 2 are overlapped on a semiconductor laminated structure 11 side of the surface emitting semiconductor layer 1 in this order, and are integrally formed with the surface emitting semiconductor laser 1.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种半导体发光器件，其中半导体光电探测器的自然辐射光的检测水平通过反射高反射率的自然辐射光而降低，并且可以更好地提高光学检测精度。解决方案：半导体发光器件包括表面发光半导体激光器1，半导体光电检测器2和光学控制层3.面发光半导体激光器1具有基板10和半导体层叠结构11，发光区域14A。半导体光检测器2具有在与包含发光区域14A的区域对应的区域中具有孔20A的基板20和具有吸收部分入射光的光吸收层22的半导体层叠结构21。光控制层3形成在与半导体叠层结构体11中的发光区域14A的周边区域对应的区域中，并且在对应于发光区域14A的区域中具有开口3A。光控制层3和半导体光检测器2依次重叠在表面发射半导体层1的半导体叠层结构11侧上，并与表面发射半导体激光器1一体地形成。（C） 2007年，日本特许厅和INPIT

8. 发明专利

JP2013105813A Semiconductor laser device assembly 有权
标题翻译：半导体激光器件组件
公开(公告)号：JP2013105813A
公开(公告)日：2013-05-30
申请号：JP2011247276
申请日：2011-11-11
申请人： Sony Corp , ソニー株式会社
发明人： KONO SHUNSUKE , KURAMOTO MASARU , MIYAJIMA TAKAO , KODA RINTARO , WATANABE HIDEKI
IPC分类号： H01S5/065 , H01S5/14 , H01S5/323
CPC分类号： H01S5/141 , B82Y20/00 , H01S3/08004 , H01S3/08009 , H01S3/105 , H01S3/106 , H01S3/1062 , H01S5/0014 , H01S5/0265 , H01S5/0657 , H01S5/101 , H01S5/143 , H01S5/22 , H01S5/3063 , H01S5/3216 , H01S5/34333
摘要： PROBLEM TO BE SOLVED: To provide a current-injection semiconductor laser device assembly having a configuration and structure which can output ultrashort pulse laser beams.SOLUTION: The semiconductor laser device assembly comprises (A) a current-injection mode-locked semiconductor laser element 10 having an optical density of 10 GW/cmor greater and a carrier density of 1×10/cmor greater, and (B) a dispersion compensation optical system 110 which receives and emits laser beams emitted from the mode-locked semiconductor laser element 10.
摘要翻译：要解决的问题：提供具有能够输出超短脉冲激光束的结构和结构的电流注入半导体激光器件组件。解决方案：半导体激光器件组件包括（A）具有10GW / cm 2以上光密度的电流注入模式锁定半导体激光元件10，以及 1×10 3 或更大的载波密度，和（B）接收的色散补偿光学系统110 并发射从锁模半导体激光元件10发射的激光束。版权所有：（C）2013，JPO＆INPIT

9. 发明专利

JP2011119630A Optical device 审中-公开
标题翻译：光学装置
公开(公告)号：JP2011119630A
公开(公告)日：2011-06-16
申请号：JP2010045394
申请日：2010-03-02
申请人： Sony Corp , Tohoku Univ , ソニー株式会社 , 国立大学法人東北大学
发明人： MIYAJIMA TAKAO , KODA RINTARO , WATANABE HIDEKI , OKI TOMOYUKI , KURAMOTO MASARU , YOKOYAMA HIROYUKI
IPC分类号： H01S5/022
CPC分类号： H01S5/50 , B82Y20/00 , H01S5/0021 , H01S5/005 , H01S5/02212 , H01S5/02288 , H01S5/028 , H01S5/0655 , H01S5/1014 , H01S5/1085 , H01S5/14 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/34333 , H01S5/4006
摘要： PROBLEM TO BE SOLVED: To provide an optical device suppressing changes in a drive current and an optical output over time. SOLUTION: An optical amplifying element 20 on a stem 10 is called transmissive SOA and is adapted to amplify short-wavelength light incoming into an incidence side end face 20A to emit light having larger luminance than the incident light from an injection side end face 20B. Both the incidence side end face 20A and the injection side end face 20B of the optical amplifying element 20 have an antireflection film on the surface thereof. The optical amplifying element 20 is sealed by a stem 10 and a cap 30. Light transmission windows 32 are provided with the cap 30 in the opposite part of the incidence side end face 20A and the injection side end face 20B, respectively. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供抑制驱动电流和光输出随时间变化的光学装置。解决方案：杆10上的光放大元件20被称为透射SOA，并且适于放大入射到入射侧端面20A中的短波长光，以发射具有比来自注射侧端的入射光更大的亮度的光面20B。光放大元件20的入射侧端面20A和注入侧端面20B都在其表面上具有防反射膜。光学放大元件20由杆10和盖30密封。透光窗32在入射侧端面20A和注入侧端面20B的相对部分分别设置有盖30。版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2011096856A Semiconductor laser 审中-公开
标题翻译：半导体激光器
公开(公告)号：JP2011096856A
公开(公告)日：2011-05-12
申请号：JP2009249469
申请日：2009-10-29
申请人： Sony Corp , ソニー株式会社
发明人： KODA RINTARO , NAKAYAMA YUSUKE
IPC分类号： H01S5/343 , H01S5/183 , H01S5/323
CPC分类号： H01S5/18308 , B82Y20/00 , H01S5/0014 , H01S5/0208 , H01S5/18358 , H01S5/18369 , H01S5/3202 , H01S5/34333 , H01S5/423
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser that can control the generation of a high-density crystal defect and surface roughness. SOLUTION: A laminated body 20 is prepared at one side of a substrate 10 with a lower DBR layer 11, a lower spacer layer 12, an active layer 13, an upper spacer layer 14, and an upper DBR layer 15 laminated in this sequence. In upper parts of the laminated body 20, e.g., the active layer 13, the upper spacer layer 14, and the upper DBR layer 15, a column-shaped mesa 16 is formed. The substrate 10 is composed of an inclined substrate having an off-angle larger than a zero degree in a direction [1-100] from a C side (0001). COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供可以控制高密度晶体缺陷和表面粗糙度的产生的半导体激光器。解决方案：在基板10的一侧准备层叠体20，其下部DBR层11，下间隔层12，活性层13，上间隔层14和上DBR层15层压在这个序列。在层叠体20的上部，例如有源层13，上隔离层14和上DBR层15中，形成有柱状台面16。基板10由从C侧（0001）的[1-100]方向偏离角度大于零度的倾斜基板构成。版权所有（C）2011，JPO＆INPIT

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