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21. 发明专利

JP2011174170A Substrate processing apparatus and method for manufacturing semiconductor device 有权
标题翻译：基板加工装置及制造半导体装置的方法
公开(公告)号：JP2011174170A
公开(公告)日：2011-09-08
申请号：JP2010278995
申请日：2010-12-15
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SAITO TATSUYUKI , SAKAI MASANORI , KAGA YUKINAO , YOKOGAWA TAKASHI
IPC分类号： C23C16/455
CPC分类号： C23C16/455 , C23C16/301 , C23C16/303 , C23C16/45578 , C23C16/52 , H01L21/00 , H01L21/02186 , H01L21/3205 , H01L23/482 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus formable of a conductive film, which is dense, includes low concentration of source-derived impurities and has low resistivity, at a higher film-forming rate, and a method for manufacturing a semiconductor device.
SOLUTION: The substrate processing apparatus includes a processing chamber configured to stack and accommodate a plurality of substrates; a first processing gas supply system configured to supply a first processing gas into the processing chamber; a second processing gas supply system configured to supply a second processing gas into the processing chamber; and a control unit configured to control the first processing gas supply system and the second processing gas supply system. At least one of the first processing gas supply system and the second processing gas supply system includes two nozzles which are vertically arranged in a stacking direction of the substrates and have different shapes, and the control unit is configured to supply at least one of the first processing gas and the second processing gas into the processing chamber through the two nozzles having different shapes when films are formed on the substrates by supplying the first processing gas and the second processing gas into the processing chamber at pulses having different film-forming rates.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种致密的可形成导电膜的基板处理装置，在较高的成膜速率下，包含低浓度源源杂质并具有低电阻率，以及制造方法半导体器件。基板处理装置包括：处理室，被配置为堆叠并容纳多个基板; 第一处理气体供应系统，被配置为将第一处理气体供应到所述处理室中; 第二处理气体供应系统，被配置为将第二处理气体供应到所述处理室中; 以及控制单元，被配置为控制第一处理气体供应系统和第二处理气体供应系统。第一处理气体供给系统和第二处理气体供给系统中的至少一个包括在基板的堆叠方向上垂直配置的两个喷嘴，并且具有不同的形状，并且控制单元被配置为提供第一当通过以不同成膜速率的脉冲将第一处理气体和第二处理气体供给到处理室中时，通过具有不同形状的两个喷嘴将处理气体和第二处理气体处理到基板上。版权所有（C）2011，JPO＆INPIT

22. 发明专利

JP2011142347A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2011142347A
公开(公告)日：2011-07-21
申请号：JP2011086587
申请日：2011-04-08
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KONYA TADASHI , TOYODA KAZUYUKI , SATO TAKETOSHI , KAGAYA TORU , SHIMA NOBUHITO , ISHIMARU NOBUO , SAKAI MASANORI , OKUDA KAZUYUKI , YAGI YASUSHI , WATANABE SEIJI , KUNII YASUO
IPC分类号： H01L21/31 , C23C16/452
摘要： PROBLEM TO BE SOLVED: To uniformize a flow rate and a flow speed of gas supplied to a multilayer substrate, thereby uniformly supplying the gas to the mounted substrate.
SOLUTION: A substrate processing apparatus includes: a reaction tube for forming a reaction chamber for housing a plurality of substrates therein; a buffer chamber formed in the reaction tube; a first gas introduction part for introducing a first treatment gas into the reaction chamber; and a second gas introduction part for introducing a second treatment gas into the buffer chamber. The first gas introduction part includes a first gas supply opening. The second gas introduction part includes a gas introduction opening. The buffer chamber includes a plurality of second gas supply openings for supplying the second treatment gas into the reaction chamber. A remote plasma unit is arranged in the second gas introduction part. The second treatment gas is activated, and the activated second treatment gas is supplied into the reaction chamber from the plurality of second gas supply openings. The first treatment gas and the activated second treatment gas are alternately supplied multiple times, and a thin film is formed on surfaces of the substrates.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了均匀化供给到多层基板的气体的流量和流速，从而将均匀的气体供给到安装的基板。解决方案：一种基板处理装置，包括：反应管，用于形成用于容纳多个基板的反应室; 形成在反应管中的缓冲室; 用于将第一处理气体引入反应室的第一气体导入部; 以及用于将第二处理气体引入缓冲室的第二气体导入部。第一气体导入部包括第一供气口。第二气体导入部包括气体导入口。缓冲室包括用于将第二处理气体供应到反应室中的多个第二气体供给开口。第二气体导入部配置有远程等离子体单元。第二处理气体被激活，活化的第二处理气体从多个第二气体供给开口供给到反应室。第一处理气体和活化的第二处理气体被交替地供给多次，并且在基板的表面上形成薄膜。版权所有（C）2011，JPO＆INPIT

23. 发明专利

JP2011054938A Substrate processing apparatus, method of manufacturing semiconductor device, and method of confirming operation of liquid flowrate control device 审中-公开
标题翻译：基板处理装置，制造半导体装置的方法以及确认液体流量控制装置的操作的方法
公开(公告)号：JP2011054938A
公开(公告)日：2011-03-17
申请号：JP2010157482
申请日：2010-07-12
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SAKAI MASANORI
IPC分类号： H01L21/31 , C23C16/455 , C23C16/52 , H01L21/316
CPC分类号： G05D7/0635 , C23C16/4485 , C23C16/52
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus, a method of manufacturing a semiconductor device, and a method of confirming an operation of a liquid flowrate control device.
SOLUTION: The substrate processing apparatus includes: a process chamber accommodating a substrate; a liquid source supply system 59 supplying a liquid source which is liquid at room temperature under normal pressure into the process chamber; a solvent supply system 61 supplying a solvent having a vapor pressure greater than that of the liquid source into the process chamber; a liquid flowrate control device 35 controlling flowrates of the liquid source and the solvent; and a controller 57 controlling the liquid source supply system, the solvent supply system, and the liquid flowrate control device, the controller controlling the liquid source supply system, the solvent supply system, and the liquid flowrate control device so that the solvent may be supplied into the liquid flowrate control device from the solvent supply system to confirm an operation of the liquid flowrate control device before the liquid source supply system supplies the liquid source into the process chamber through the liquid flowrate control device.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种基板处理装置，半导体装置的制造方法以及确认液体流量控制装置的操作的方法。基板处理装置包括：容纳基板的处理室; 液体源供给系统59将在常压下为液体的液体源供给到处理室中; 将具有大于液体源的蒸气压的溶剂供给到处理室中的溶剂供应系统61; 液体流量控制装置35，其控制液体源和溶剂的流量; 以及控制液体源供给系统，溶剂供应系统和液体流量控制装置的控制器57，控制液体源供给系统的控制器，溶剂供应系统和液体流量控制装置，以便可以供应溶剂在液体源供给系统通过液体流量控制装置将液体源供给到处理室之前，从溶剂供给系统进入液体流量控制装置，以确认液体流量控制装置的操作。版权所有（C）2011，JPO＆INPIT

24. 发明专利

JP2011052319A Method of manufacturing semiconductor device, substrate processing apparatus, and semiconductor device 有权
标题翻译：制造半导体器件的方法，衬底处理装置和半导体器件
公开(公告)号：JP2011052319A
公开(公告)日：2011-03-17
申请号：JP2010160873
申请日：2010-07-15
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SAITO TATSUYUKI , SAKAI MASANORI , KAGA YUKINAO , YOKOGAWA TAKASHI
IPC分类号： C23C16/455 , H01L21/28 , H01L21/285
CPC分类号： H01L21/0228 , C23C16/34 , C23C16/45523 , C23C16/45544 , C23C16/45563 , C23C16/52 , H01L21/02104 , H01L21/02172 , H01L21/02225 , H01L21/02263 , H01L21/02271 , H01L21/28506
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which allows rapid formation of a conductive film, which has a low concentration of impurities permeated from a material owing its dense structure, and a low resistivity, and to provide a substrate processing apparatus. SOLUTION: The method of manufacturing a semiconductor device is performed by simultaneously supplying two or more kinds of materials into a processing chamber to form a film on a substrate placed in the processing chamber. The method comprises: performing a first material supply process by supplying at least one material into the processing chamber at a first supply flow rate; and performing a second material supply process by supplying the at least one material into the processing chamber at a second supply flow rate different from the first supply flow rate. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造半导体器件的方法，该半导体器件允许快速形成由于其致密结构而从材料渗透的低浓度的杂质和低电阻率的导电膜，并且提供基板处理装置。解决方案：制造半导体器件的方法是通过将两种或更多种材料同时供给到处理室中以在放置在处理室中的衬底上形成膜来进行的。该方法包括：以第一供应流量将至少一种材料供应到处理室中，执行第一材料供应过程; 以及通过以与第一供给流量不同的第二供给流量将至少一种材料供给到处理室来执行第二材料供给处理。版权所有（C）2011，JPO＆INPIT

25. 发明专利

JP2010114420A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2010114420A
公开(公告)日：2010-05-20
申请号：JP2009179630
申请日：2009-07-31
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： MIYA HIRONOBU , SAKAI MASANORI , MIZUNO KANEKAZU , TOYODA KAZUYUKI , TAKEBAYASHI YUJI , KATO TSUTOMU , ONO KENJI , MORIKAWA ATSUSHI , OKADA ITARU
IPC分类号： H01L21/316 , C23C16/452 , H01L21/31 , H01L21/8242 , H01L27/108
CPC分类号： C23C16/405 , C23C16/483 , H01L21/02164 , H01L21/02181 , H01L21/02189 , H01L21/02277 , H01L21/0228 , H01L21/3141 , H01L21/31608 , H01L21/31641 , H01L21/31645
摘要： PROBLEM TO BE SOLVED: To improve the coatability or loading effect of an oxide film without increasing the supply amount or supply time of an oxidant. SOLUTION: The method of manufacturing a semiconductor device includes a substrate loading step of loading at least one substrate to a processing chamber; an oxide film forming step of forming an oxide film on the substrate by alternately supplying a first reaction material and a second reaction material containing oxygen atoms to the processing chamber while heating the substrate; and a substrate unloading step of unloading the substrate from the processing chamber, wherein the forming of the oxide film is performed by keeping the substrate at a temperature equal to or lower than a self-decomposition temperature of the first reaction material and by irradiating the second reaction material with ultraviolet light. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提高氧化膜的涂布性或负载效果，而不增加氧化剂的供给量或供给时间。解决方案：制造半导体器件的方法包括将至少一个衬底装载到处理室的衬底加载步骤; 氧化膜形成步骤，通过在加热所述基板的同时向所述处理室交替地供给第一反应材料和含有氧原子的第二反应材料，在所述基板上形成氧化膜; 以及从处理室卸载基板的基板卸载步骤，其中通过将基板保持在等于或低于第一反应材料的自分解温度的温度下并通过照射第二反应材料来进行氧化膜的形成具有紫外线的反应物质。版权所有（C）2010，JPO＆INPIT

26. 发明专利

JP2009272355A Substrate processing system 审中-公开
标题翻译：基板加工系统
公开(公告)号：JP2009272355A
公开(公告)日：2009-11-19
申请号：JP2008119443
申请日：2008-05-01
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SAKAI MASANORI , SASAKI SHINYA
IPC分类号： H01L21/31 , C23C16/455 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To prevent significant movement on a liquid level by relieving the outlet pressure of a carrier gas supply pipe.
SOLUTION: The substrate processing system includes: a tank 260 for housing a liquid material; a carrier gas supply pipe 300 by which a carrier gas is blown into the liquid material in the tank 260 to evaporate the liquid material, and a pressure relief mechanism which is attached to the gas outlet of the carrier gas supply pipe 300 and relieves an increase in delivery pressure of the carrier gas supply pipe 300 by using a plurality of outlet passages that are made porous and segmentalized; and a material gas supply pipe 232b which is connected to the tank 260 and supplies a mixed gas of the gas of the liquid material and the carrier gas to a processing chamber for processing a substrate.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：通过减轻载气供应管的出口压力来防止液面上的显着运动。基板处理系统包括：用于容纳液体材料的罐260; 载气供给管300，其中载气被吹入罐260中的液体材料中以蒸发液体材料;以及压力释放机构，其附接到载气供应管300的气体出口并减轻增加通过使用多孔和分段的多个出口通道在载气供应管300的输送压力中; 以及与罐260连接并将液体材料和载气的气体的混合气体供给到用于处理基板的处理室的原料气体供给管232b。版权所有（C）2010，JPO＆INPIT

27. 发明专利

JP2009260159A Substrate treatment apparatus 有权
标题翻译：基板处理设备
公开(公告)号：JP2009260159A
公开(公告)日：2009-11-05
申请号：JP2008109868
申请日：2008-04-21
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SASAKI SHINYA , SAKAI MASANORI
IPC分类号： H01L21/31 , C23C16/455 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To set a difference in pressure in a vaporization vessel and a carrier gas supply pipe to be equal to or smaller than that at a stationary time in a substrate treatment device having a vaporization apparatus that vaporizes a liquid material.
SOLUTION: A substrate treatment apparatus includes a treatment chamber that accommodates a substrate, a vaporization vessel 260 that accommodates a liquid material to vaporize the material, a carrier gas supply line that supplies a carrier gas to the vaporization vessel 260, at least one primary opening closing valve provided in the carrier gas supply line, a material gas supply line that supplies a material gas vaporized in the vaporization vessel 260 to the treatment chamber, at least one secondary opening closing valve provided in the material gas supply line, and a controller that controls the opening and closing of at least the primary and secondary opening closing valves. When supplying the vaporized material gas into the treatment chamber, the controller controls the opening/closing operation of the primary and the secondary opening closing valves so that the secondary valve is opened with a lapse of a predetermined time after the primary opening closing valve is opened.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了将蒸发容器和载气供给管中的压力差设定为具有使液体材料蒸发的蒸发装置的基板处理装置的静止时间以下的压力差。解决方案：基板处理装置包括容纳基板的处理室，容纳液体材料以蒸发材料的蒸发容器260，至少向载气260供应载气的载气供给管线设置在载气供给管路中的一个主开闭阀，将在蒸发容器260中蒸发的原料气体供给到处理室的原料气体供给管线，设置在原料气体供给管路中的至少一个二次开闭阀，以及控制器，其至少控制主开闭阀和第二开关阀的打开和关闭。当将蒸发的材料气体供应到处理室中时，控制器控制一次和二次打开关闭阀的打开/关闭操作，使得在主打开关闭阀打开之后经过预定时间的二次阀打开。版权所有（C）2010，JPO＆INPIT

28. 发明专利

JP2009206489A Substrate processing apparatus 有权
标题翻译：基板加工设备
公开(公告)号：JP2009206489A
公开(公告)日：2009-09-10
申请号：JP2008312661
申请日：2008-12-08
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SAKAI MASANORI , TAKEBAYASHI YUJI , KATO TSUTOMU , SASAKI SHINYA , YAMAZAKI HIROHISA
IPC分类号： H01L21/31 , C23C16/455 , H01L21/027 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To accelerate the supply of gas between adjacent substrates without reducing the number of substrates that is collectively processed. SOLUTION: The substrate processing apparatus includes a processing chamber for storing and processing the substrates horizontally stacked in multiple stages, at least one processing gas supply nozzle that is extended along the inner wall of the processing chamber in the stacking direction of the substrates and supplies processing gas into the processing chamber, a pair of inert gas supply nozzles which are extended along the inner wall of the processing chamber in the stacking direction of the substrates, are provided so as to hold the processing gas supply nozzle from both sides along the circumferential direction of the substrate, and supply inert gas into the processing chamber, and an exhaust line for exhausting air from the processing chamber. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了加速相邻基板之间的气体供给，而不减少共同处理的基板的数量。解决方案：基板处理装置包括：处理室，用于存储和处理水平堆叠成多级的基板;至少一个处理气体供给喷嘴，其在基板的堆叠方向上沿着处理室的内壁延伸; 并且将处理气体供给到处理室中，沿着基板的层叠方向沿着处理室的内壁延伸的一对惰性气体供给喷嘴被设置成从两侧保持处理气体供给喷嘴基板的周向，向处理室供给惰性气体，以及从处理室排出空气的排气管路。版权所有（C）2009，JPO＆INPIT

29. 发明专利

JP2007194668A Substrate processing device 有权
标题翻译：基板处理装置
公开(公告)号：JP2007194668A
公开(公告)日：2007-08-02
申请号：JP2007104727
申请日：2007-04-12
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KONYA TADASHI , TOYODA KAZUYUKI , SATO TAKETOSHI , KAGAYA TORU , SHIMA NOBUHITO , ISHIMARU NOBUO , SAKAI MASANORI , OKUDA KAZUYUKI , YAGI YASUSHI , WATANABE SEIJI , KUNII YASUO
IPC分类号： H01L21/31 , C23C16/455
摘要： PROBLEM TO BE SOLVED: To homogeneously provide a gas to a laminated substrate by making flow rate and flow velocity of the gas supplied thereto uniform. SOLUTION: A substrate processing device is equipped with a reactor tube 6 forming a reaction chamber accommodating a lamination-arranged substrate, a first and second gas inlet sections, buffer chamber 17 provided in the reaction tube and having a gas feed opening, and electrode for generating plasma making raw gas in the buffer chamber activate. The first gas inlet section introduces raw gas into the buffer chamber. The buffer chamber forms a space for activating raw gas by the electrode therein. The raw gas introduced from the first gas inlet section is supplied from the gas feed opening into the reaction chamber. The second gas inlet section supplies raw gas without activating it into the reaction chamber, which is different from the raw gas to be activated. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过使供给的气体的流速和流速均匀地均匀地向层压基板提供气体。解决方案：基板处理装置配备有形成容纳层叠基板的反应室的反应管6，设置在反应管内的具有供气口的第一和第二气体入口部，缓冲室17，并且用于在缓冲室中产生等离子体制造原料气体的电极激活。第一气体入口部将原料气体引入缓冲室。缓冲室形成用于通过其中的电极活化原始气体的空间。从第一气体导入部导入的原料气体从气体供给口供给到反应室。第二气体入口部分将原料气体不进入反应室中，而不与要被活化的原料气体不同。版权所有（C）2007，JPO＆INPIT

30. 发明专利

JP2006108712A Substrate treatment method and apparatus 审中-公开
标题翻译：基板处理方法和装置
公开(公告)号：JP2006108712A
公开(公告)日：2006-04-20
申请号：JP2005351318
申请日：2005-12-05
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TAKANO SATOSHI , SAKAI MASANORI , TAGAMI SATORU , WATANABE TOMOJI
IPC分类号： H01L21/205 , C23C16/44 , C23C16/455
摘要： PROBLEM TO BE SOLVED: To suppress element defects caused between wafers in a manufacturing process, even if a deposition rate changes with the quality of materials of walls and their surface roughness, when a plurality of wafers are held almost horizontally and in parallel, and deposition treatment is performed.
SOLUTION: A plurality of substrates are held almost horizontally and in parallel, and in the upper part of each substrate, flat surfaces of the walls are made of the same quality of the material. By forming a film with the walls having substantially the same surface roughness, downward facing and in parallel with the substrate, uniformity is improved.
COPYRIGHT: (C)2006,JPO&NCIPI

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