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1. 发明专利

JP2009019762A Method of manufacturing for heat insulating wall body 审中-公开
标题翻译：热绝缘墙体制造方法
公开(公告)号：JP2009019762A
公开(公告)日：2009-01-29
申请号：JP2008135356
申请日：2008-05-23
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SHIRATORI WAKAKO , HOSAKA EIJI , ONO KENJI , MIYATA TOSHIMITSU
IPC分类号： F16L59/05 , C23C16/46 , F27D1/04 , H01L21/22 , H01L21/31 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing for an heat insulating wall body, achieving reduced manufacturing cost.
SOLUTION: A heater unit 20 includes the heat insulating wall body 23 concentrically arranged at an interval 22 in a case 21, and a heater 34 laid down on the inner periphery of the heat insulating wall body 23. The heat insulating wall body 23 is composed of a discoid ceiling wall portion 24 and a cylindrical sidewall portion 25, and the sidewall portion 25 is formed by stacking a plurality of heat insulating blocks 26. Each of the heat insulating blocks 26 includes a toroidal body 27 molded by a molding die using a thermal insulator, and is assembled to the sidewall portion 25 after the spigot joint male portion 28 at the upper end of the body 27 is spigotted in the spigot joint female portion 29 at the lower end thereof. Heating elements 32 constituting the heater 34 are respectively mounted in mounting grooves 30 provided in the inner peripheral surfaces of the heat insulating blocks 26. Since a plurality of the same heat insulating blocks have only to be integrally molded by the molding die in spite of the length specification of the heat insulating wall body, the manufacturing cost of the heat insulating wall body can be reduced.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于隔热壁体的制造方法，从而降低制造成本。解决方案：加热器单元20包括同心地布置在壳体21中的间隔22的绝热壁体23和放置在隔热壁体23的内周上的加热器34.隔热壁体 23由圆盘顶壁部分24和圆筒形侧壁部分25组成，并且侧壁部分25通过堆叠多个绝热块26而形成。每个隔热块26包括通过模制成型的环形体27 在主体27的上端的插口接头凸部28在其下端插入插口接头阴部29中之后，使用绝热体进行模制，并且组装到侧壁部25。构成加热器34的加热元件32分别安装在设置在绝热块26的内周面的安装槽30中。由于多个相同的绝热块只能通过模具一体地模制，尽管隔热壁体的长度规格，能够降低隔热壁体的制造成本。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2010040845A Substrate treating apparatus 审中-公开
标题翻译：基板处理装置
公开(公告)号：JP2010040845A
公开(公告)日：2010-02-18
申请号：JP2008203164
申请日：2008-08-06
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： ONO KENJI
IPC分类号： H01L21/31 , C23C16/448 , H01L21/283 , H01L21/285 , H01L21/768 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide a substrate treating apparatus capable of supplying a liquid material while preventing the risks of prolonging a stop state and contaminating the pipes.
SOLUTION: In the substrate treating apparatus including a tank 81 for supplying a liquid material 80 and a vaporizer 83 for vaporizing the liquid material 80 to supply a vaporized gas of the liquid material 80 emitted by the vaporizer 83 into a treatment chamber, thereby forming a film on a wafer, the tank 81 is connected with a supplying container 91 for supplying the liquid material 80 and with an exhaust pipe 93 for reducing pressure in the tank 81, and the pressure in the supplying container 91 is made higher than that in the tank 81 so that the liquid material 80 is fed from the supplying container 91 into the tank 81. A cleaning fluid container 96 containing a cleaning fluid 95 is connected to the supplying container 91. Exchange work can be done only for the supplying container 91 and accordingly, the supply of the liquid material can be done while preventing the risks of prolonging the stop state and contaminating the pipes.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够提供液体材料的基板处理装置，同时防止延长停止状态和污染管道的风险。解决方案：在包括用于供应液体材料的罐81和用于蒸发液体材料80以将由蒸发器83排出的液体材料80的气化气体供应到处理室的蒸发器83的基板处理设备中，从而在晶片上形成膜，罐81与用于供给液体材料80的供应容器91和用于减小罐81中的压力的排气管93连接，使得供给容器91中的压力高于在罐81中，液体材料80从供应容器91进入罐81.包含清洁流体95的清洁流体容器96连接到供应容器91.只能用于供应容器91，因此，可以在防止延长停止状态和污染管道的风险的同时进行液体材料的供给。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2008294190A Substrate treating system 审中-公开
标题翻译：基板处理系统
公开(公告)号：JP2008294190A
公开(公告)日：2008-12-04
申请号：JP2007137636
申请日：2007-05-24
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： ONO KENJI , KATO TSUTOMU , MORIKAWA ATSUSHI , OKADA ITARU
IPC分类号： H01L21/31 , C23C16/448
摘要： PROBLEM TO BE SOLVED: To provide a substrate treating system which suppresses reliquefaction of a vaporized material and can improves the productivity.
SOLUTION: In the substrate treating system where liquid material is vaporized and is introduced into a treatment room and a desired film is formed on a substrate by equipped with a vaporizer which is provided with a vaporization chamber having several outlets, a flow passage for discharging the vaporized material from one of the outlets via a valve is arranged; another flow passage for supplying the vaporized material to a reaction chamber from another outlet via a valve is arranged; and discharge and supply of the vaporized material is switched by operating opening and closing of the valves.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种抑制汽化材料再液化并能提高生产率的基板处理系统。解决方案：在液体材料蒸发并引入处理室的基板处理系统中，通过装备有具有多个出口的蒸发室的蒸发器在基板上形成所需的膜，流路用于经由阀从一个出口排出蒸发的材料; 布置了用于经由阀从另一个出口将蒸发的材料供应到反应室的另一个流动通道; 并且通过操作阀的打开和关闭来切换蒸发的材料的排出和供应。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2010028094A Substrate processing apparatus and method of manufacturing semiconductor device 有权
标题翻译：基板加工装置及制造半导体装置的方法
公开(公告)号：JP2010028094A
公开(公告)日：2010-02-04
申请号：JP2009114861
申请日：2009-05-11
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TAKEBAYASHI YUJI , SAKAI MASANORI , KATO TSUTOMU , ONO KENJI
IPC分类号： H01L21/31 , C23C16/448
CPC分类号： C23C16/4481 , C23C16/4408 , C23C16/45557 , C23C16/52
摘要： PROBLEM TO BE SOLVED: To acquire a level of deposition of a residue in the interior of a vaporizer without disassembling the vaporizer and beforehand acquire a timing at which maintenance of the interior of the vaporizer.
SOLUTION: A substrate processing apparatus has: a processing chamber in which a substrate is accommodated; a vaporizer having a vaporizing space for generating a vaporized gas by vaporizing a liquid material supplied into the vaporizing space; a liquid material supply system having a liquid material supply line for supplying a liquid material into the vaporizing space; a vaporized gas supply system having a vaporized gas supply line for supplying a vaporized gas into a processing chamber; a discharging system for discharging an atmosphere within the processing chamber, a pressure gauge for measuring a pressure within the vaporizing space; a carrier gas supply system having a carrier gas supply line for supplying a carrier gas into the vaporizing space; and a controller for determining the state of the vaporizer on the basis of a value measured by the pressure gauge when the carrier gas is supplying into the vaporizing space.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：在不拆卸蒸发器的情况下获得残留物在蒸发器内部的沉积程度，并且预先获取蒸发器内部的维持时间。解决方案：基板处理装置具有：容纳基板的处理室; 蒸发器，其具有用于通过蒸发供应到蒸发空间中的液体材料产生蒸发气体的蒸发空间; 液体材料供应系统，具有用于将液体材料供应到蒸发空间中的液体材料供应管线; 气化气体供给系统，具有用于将蒸发气体供给到处理室中的汽化气体供给管线; 用于排出处理室内的气氛的排出系统，用于测量蒸发空间内的压力的压力计; 载气供给系统，具有用于将载气供给到蒸发空间的载气供给管线; 以及控制器，用于基于当载气供应到蒸发空间中时由压力计测量的值来确定蒸发器的状态。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2011089645A Heat insulating block 审中-公开
标题翻译：热绝缘块
公开(公告)号：JP2011089645A
公开(公告)日：2011-05-06
申请号：JP2010283080
申请日：2010-12-20
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SHIRATORI WAKAKO , HOSAKA EIJI , ONO KENJI , MIYATA TOSHIMITSU
IPC分类号： F16L59/05 , F27D1/00
摘要： PROBLEM TO BE SOLVED: To provide a heat insulating block capable of reducing manufacturing cost and constituting a heat insulating wall body.
SOLUTION: A heater unit 20 includes the heat insulating wall body 23 formed in a concentric circle with a clearance 22 therebetween in a case 21 and a heater 34 laid at the inner periphery of the heat insulating wall body 23, which is composed of a ceiling wall part 24 having a disc shape and a side wall part 25 having a cylindrical shape. The side wall part 25 is constituted by stacking a plurality of heat insulating blocks 26. The heat insulating block 26 includes a body 27 molded into a doughnut-shape by using a heat insulating material by use of a mold. A spigot connection male part 28 in an upper end part of the body 27 and a spigot connection female part 29 in a lower end part of it are mutually spigot-joined and are assembled in the side wall part 25. Heat generating bodies 32 constituting the heater 34 are attached to mounting grooves 30 on an inner peripheral face of the heat insulating block 26, respectively. Since it is enough with integral molding of a plurality of the same heat insulating blocks by use of the mold irrespective of length of the heat insulating wall body, manufacturing cost of the heat insulating wall body can be reduced.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够降低制造成本并构成绝热壁体的绝热块。解决方案：加热器单元20包括形成为同心圆的绝热壁体23，其在壳体21中具有间隙22，放置在隔热壁体23的内周的加热器34构成具有圆盘形状的顶壁部分24和具有圆柱形状的侧壁部分25。侧壁部25通过堆叠多个隔热块26构成。绝热块26包括通过使用模具通过使用隔热材料成型为环形的主体27。本体27的上端部的插头连接凸部28和下端部的插接连接阴部29相互插接，并组装在侧壁部25中。构成加热器34分别连接到隔热块26的内周面上的安装槽30。由于绝热壁体的长度与多孔绝热块的整体成形足够多，因此可以降低隔热壁体的制造成本。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2009176942A Substrate treatment equipment 审中-公开
标题翻译：基板处理设备
公开(公告)号：JP2009176942A
公开(公告)日：2009-08-06
申请号：JP2008013894
申请日：2008-01-24
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： ONO KENJI
IPC分类号： H01L21/31 , C23C16/44 , C23C16/448 , H01L21/02
摘要： PROBLEM TO BE SOLVED: To provide substrate treatment equipment capable of equalizing the heating state of piping.
SOLUTION: The substrate treatment equipment carries out a desired treatment to a substrate while heating the substrate placed in a treatment chamber. The substrate treatment equipment includes the piping 300 with a curved section 302 as the piping 300 connected to the treatment chamber and a plurality of plate-shaped heaters 400 covering at least the curved section 302. A plurality of the plate-shaped heaters 400 are fitted mutually in parallel along the longitudinal direction of the piping 300 to the inside 304 and outside 306 of the curved section 302 of the piping 300 while mutually abutting side edge sections 430.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够均衡管道的加热状态的基板处理设备。解决方案：衬底处理设备在加热放置在处理室中的衬底的同时对衬底进行期望的处理。基板处理设备包括具有连接到处理室的管道300的弯曲部分302和至少覆盖弯曲部分302的多个板状加热器400的管道300.多个板状加热器400被安装在管道300的弯曲部分302的内部304和外部306中，沿着管道300的纵向相互并联，同时相互邻接的侧边缘部分430.版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2005197523A Substrate treatment equipment 审中-公开
标题翻译：基板处理设备
公开(公告)号：JP2005197523A
公开(公告)日：2005-07-21
申请号：JP2004003285
申请日：2004-01-08
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KATO TSUTOMU , ONO KENJI
IPC分类号： C23C16/44 , C23C16/509 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To effectively prevent high-frequency noise occurring from a plasma source in a treatment chamber from being transmitted to a heating means provided outside of the treatment chamber though this substrate treatment equipment is compact.
SOLUTION: The substrate treatment equipment is provided with a reaction tube 203 for forming the treatment chamber 201 inside, and treats a wafer 200 by utilizing plasma generated by the plasma source 250 in the treatment chamber 201. A conductive shield member 208 is formed between the treatment chamber 201 and a heater 207 provided outside of the treatment room 201, and a reaction tube 203 is covered with the shield member 208. By grounding E the shield member 208, the high-frequency noise occurring from the plasma source 250 in the treatment chamber 201 is suppressed.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了有效地防止在处理室中等离子体源发生的高频噪声被传送到设置在处理室外部的加热装置，尽管该基板处理设备是紧凑的。解决方案：衬底处理设备设置有用于在内部形成处理室201的反应管203，并且通过利用处理室201中的等离子体源250产生的等离子体来处理晶片200.导电屏蔽构件208是形成在治疗室201和设置在治疗室201外部的加热器207之间，反应管203被屏蔽构件208覆盖。通过使屏蔽构件208接地，从等离子体源250发生的高频噪声在处理室201中被抑制。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2004288775A Semiconductor manufacturing apparatus 审中-公开
公开(公告)号：JP2004288775A
公开(公告)日：2004-10-14
申请号：JP2003077203
申请日：2003-03-20
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： ONO KENJI
IPC分类号： H01L21/22 , H01L21/205 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus which improves uniformity within a substrate arranged global surface and can give desired temperature distribution into a substrate surface of a substrate arranged end portion by improving temperature uniformity within the substrate surface in the substrate arranged end portion.
SOLUTION: Two exoergic zones 7a and 7b are formed in a region exceeding substrate arrangement upward. Two exoergic zones 7c and 7d are formed in a region exceeding the substrate arrangement downward. Two exoergic zones 7e and 7f are formed in a region which faces the substrate arrangement. Cylindrical exoergic zones 7 which are mutually independent as an electric circuit are constituted. In each of the exoergic zones 7, energizing electric power is controlled independently every exoergic zone 7.
COPYRIGHT: (C)2005,JPO&NCIPI

9. 发明专利

JP2004221102A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2004221102A
公开(公告)日：2004-08-05
申请号：JP2003002986
申请日：2003-01-09
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： ONO KENJI
IPC分类号： H01L21/22 , H01L21/205 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus where distribution of a temperature of the substrate to be processed during a thermal processing can be made uniform. SOLUTION: Heaters 44 of a plurality of stages are arranged on the inner periphery of a heat insulation wall 43 of a heater unit 40 which is disposed in a concentric circle on the outer side of a process tube 31. Two heater wires 45 are arranged in series by a peripheral direction in each heater 44. In the heater wire 45, a round bar is bent in a waveform shape and is rounded off in a cylindrical shape whose diameter is smaller than the heat insulation wall 43. A unit pattern 48 is constituted of a large first interval w1 and a pair of small second intervals w2 and w2. The heater wire 45 is obtained by repeating the unit pattern 48 for six times. Both terminals 49 and 49 of the heater wire 45 pass through a tube wall of the heat insulation wall 43. Since the unit pattern formed of the large interval and the small intervals is regularly repeated and the heater wire is constituted, distribution of a heating value in a whole periphery of the heater can be made uniform. The wafer can be heated so that distribution of the temperature becomes uniform. COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：提供一种基板处理装置，其中可以使在热处理期间待处理的基板的温度分布均匀。解决方案：多个级的加热器44布置在加热器单元40的隔热壁43的内周上，加热器单元40设置在处理管31的外侧上的同心圆中。两个加热器线45 在每个加热器44中通过圆周方向串联布置。在加热丝45中，圆棒被弯曲成波形并被圆形化，其直径小于隔热壁43的圆柱形形状。单元图案 48由大的第一间隔w1和一对小的第二间隔w2和w2构成。通过重复单元图案48六次获得加热丝45。加热线45的端子49和49都通过绝热壁43的管壁。由于大间隔形成的单位图案和小间隔被规则地重复，并且构成加热丝，所以发热值的分布在加热器的整个周边可以均匀。可以加热晶片使得温度分布变得均匀。版权所有（C）2004，JPO＆NCIPI

10. 发明专利

JP2003272804A Heat treatment device 审中-公开
标题翻译：热处理装置
公开(公告)号：JP2003272804A
公开(公告)日：2003-09-26
申请号：JP2002072053
申请日：2002-03-15
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： ONO KENJI
IPC分类号： H05B3/06 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To prevent a holding structure of a resistance heating element from breakage caused by the temperature fluctuation of a heat treatment device. SOLUTION: The resistance heating element 10 is held between one side 12A of holding members 12 and a first main surface 14A of a holding wall 14. The holding members 12 are arranged so that the other side of the holding members 12 penetrate through the holding wall 14, and ends 12B protrude from a second main surface 14B of the holding wall 14. The end parts 12B of the holding members 12 protruding from the second main surface 14B are fixed to plate-shaped members 16, and the holding members 12 are fixed to the holding wall 14. COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了防止电阻加热元件的保持结构由热处理装置的温度波动引起的破损。解决方案：电阻加热元件10保持在保持构件12的一侧12A和保持壁14的第一主表面14A之间。保持构件12被布置成使得保持构件12的另一侧穿透保持壁14和端部12B从保持壁14的第二主表面14B突出。从第二主表面14B突出的保持构件12的端部12B被固定到板状构件16，并且保持构件 12固定在保持壁14上。版权所有（C）2003，JPO

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