专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2012251212A Method for producing semiconductor device and apparatus for processing substrate 有权
标题翻译：用于生产半导体器件的方法和用于处理衬底的装置
公开(公告)号：JP2012251212A
公开(公告)日：2012-12-20
申请号：JP2011124728
申请日：2011-06-03
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： HORII SADAYOSHI , SAITO TATSUYUKI
IPC分类号： C23C16/44 , C23C16/14 , H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing technique which can form a tungsten-containing film on a substrate with good productivity even in a hot wall type substrate processing apparatus whose reaction tube is made of quartz.SOLUTION: The method comprises a step of heating a reaction tube made of quartz under the state in which a substrate is not brought into the reaction tube and feeding a titanium-containing gas and a nitrogen-containing gas into the reaction tube to precoat the inside wall of the reaction tube with a titanium nitride film, a step of bringing the substrate into the precoated reaction tube, a step of heating the inside of the reaction tube under the state in which the substrate is brought into the reaction tube and feeding a tungsten-containing gas into the reaction tube to form a tungsten-containing film on the substrate, and a step of bringing the substrate on which the tungsten film is formed out of the reaction tube.
摘要翻译：解决的问题：提供即使在其反应管由石英制成的热壁型基板处理装置中也能以高生产率在基板上形成含钨膜的基板加工技术。解决方案：该方法包括在基板未被引入反应管的状态下加热由石英制成的反应管并将含钛气体和含氮气体进料到反应管中的步骤，用氮化钛膜预处理反应管的内壁，使基板进入预涂反应管的步骤，在将基板带入反应管的状态下加热反应管内部的步骤;以及将含钨气体进料到反应管中以在基板上形成含钨膜，以及将形成有钨膜的基板从反应管中引出的步骤。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2012104719A Method of manufacturing semiconductor device and substrate processing apparatus 审中-公开
标题翻译：制造半导体器件和衬底加工设备的方法
公开(公告)号：JP2012104719A
公开(公告)日：2012-05-31
申请号：JP2010253169
申请日：2010-11-11
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TAKEBAYASHI YUJI , SAITO TATSUYUKI , KANAYAMA KENJI
IPC分类号： H01L21/8242 , C23C16/34 , C23C16/40 , H01L21/31 , H01L21/316 , H01L21/822 , H01L27/04 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of manufacturing a capacitor used in the semiconductor device with efficiency and a small occupied area, and to provide a substrate processing apparatus.SOLUTION: A method of manufacturing a semiconductor device comprises: a step (S104) of forming a lower electrode on a substrate 200; steps (S106, S108, and S110) of forming a dielectric film by stacking three kinds of metal oxide films each containing a different metal element; and a step (S112) of forming an upper electrode on the dielectric film, wherein each step is performed by the same apparatus.
摘要翻译：解决的问题：提供一种制造半导体器件的方法，所述半导体器件能够以有效率和占用面积小的方式制造半导体器件中使用的电容器，并提供衬底处理设备。解决方案：制造半导体器件的方法包括：在衬底200上形成下电极的步骤（S104）; 通过层叠各自含有不同金属元素的三种金属氧化物膜形成电介质膜的步骤（S106，S108和S110）以及在所述电介质膜上形成上部电极的工序（S112），其中，每个步骤由相同的装置进行。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2012104703A Method of manufacturing semiconductor device and substrate processing apparatus 审中-公开
标题翻译：制造半导体器件和衬底加工设备的方法
公开(公告)号：JP2012104703A
公开(公告)日：2012-05-31
申请号：JP2010252882
申请日：2010-11-11
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TAKEBAYASHI YUJI , SAITO TATSUYUKI , YAMAMOTO KATSUHIKO , OKUNO MASAHISA
IPC分类号： H01L21/316 , C23C16/56 , H01L21/31 , H01L21/8242 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that modifies a thin film having a high dielectric constant and to provide a substrate processing apparatus.SOLUTION: A method of manufacturing a semiconductor device comprises the steps of: loading a substrate on which a high dielectric film is formed into a processing chamber; heating and modifying the high dielectric film by irradiating the substrate with microwave; and taking out the substrate from the processing chamber.
摘要翻译：解决的问题：提供一种制造半导体器件的方法，该半导体器件修改具有高介电常数的薄膜并提供衬底处理设备。解决方案：制造半导体器件的方法包括以下步骤：将形成有高介电膜的衬底加载到处理室中; 通过用微波照射基板来加热和改性高介电膜; 并从处理室取出基板。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2011222677A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2011222677A
公开(公告)日：2011-11-04
申请号：JP2010088955
申请日：2010-04-07
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TAKEBAYASHI YUJI , SAITO TATSUYUKI , YAMAMOTO TETSUO , KATO TSUTOMU , OKADA ITARU
IPC分类号： H01L21/31 , C23C16/458 , H01L21/22
摘要： PROBLEM TO BE SOLVED: To improve quality of treatment and yield by preventing difference of flow rate from increasing between a processing surface and a rim of a substrate and thereby improving uniformity of deposition processing.SOLUTION: A substrate processing apparatus has a substrate holder 18 for holding a substrate 200, a reaction tube 205 which houses the substrate and the substrate holder, gas supply systems 233a, 233b, 240a and 240b which supply processing gas in a direction parallel with the surface to be processed of the substrate, and an exhaust system 231 which exhausts the atmosphere in the reaction tube. The substrate holder has a plurality of columns 113, and a flow straightening member which is placed on the column, is an annular member for mounting the substrate, and has a notch formed in a part thereof. A distance between a circumference of the flow straightening member and an inner wall face of the reaction tube is shorter than a distance between the column and the inner wall face of the reaction tube.
摘要翻译：要解决的问题：通过防止流速与基板的加工表面和边缘之间的增加的差异来提高处理质量和产量，从而提高沉积处理的均匀性。解决方案：基板处理装置具有用于保持基板200的基板保持件18，容纳基板和基板保持件的反应管205，供给系统233a，233b，240a和240b，沿着方向与基板的被处理面平行的排气系统231，其排出反应管内的气氛。衬底保持器具有多个列113，并且放置在柱上的流动矫正构件是用于安装衬底的环形构件，并且在其一部分中形成有切口。流动矫直构件的圆周与反应管的内壁面之间的距离比反应管的内壁面和内壁面的距离短。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2011068984A Method for manufacturing semiconductor device, cleaning method and substrate treatment apparatus 有权
标题翻译：制造半导体器件的方法，清洁方法和基板处理装置
公开(公告)号：JP2011068984A
公开(公告)日：2011-04-07
申请号：JP2010154278
申请日：2010-07-06
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SAKAI MASANORI , KAGA YUKINAO , YOKOGAWA TAKASHI , SAITO TATSUYUKI
IPC分类号： C23C16/44 , H01L21/31 , H01L21/318
CPC分类号： B08B7/00 , C23C16/4404 , C23C16/4405 , H01L21/28562 , H01L21/67028
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, which effectively removes an electroconductive film or an insulation film; a cleaning method; and a substrate treatment apparatus. SOLUTION: This manufacturing method includes setting the following first to fourth steps as one cycle and repeating the cycle a plurality of times: the first step of carrying a substrate into a treatment chamber; the second step of supplying a plurality of source gases into the treatment chamber, and forming the electroconductive film or the insulation film on the substrate; the third step of carrying the substrate after having been treated out from the treatment chamber; and the fourth step of supplying a reforming gas in the treatment chamber, and reforming the electroconductive film or the insulation film which has been deposited in the treatment chamber; and then conducting the fifth step of supplying a cleaning gas into the treatment chamber, and removing a deposit which has been deposited in the treatment chamber and includes the reformed electroconductive film or insulation film. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种有效去除导电膜或绝缘膜的半导体器件的制造方法; 清洗方法; 和基板处理装置。解决方案：该制造方法包括将以下第一至第四步骤设置为一个周期并重复该循环多次：将衬底运送到处理室中的第一步骤; 将多个源气体供应到处理室中的第二步骤，以及在基板上形成导电膜或绝缘膜; 在从处理室处理出之后承载基板的第三步骤; 以及在所述处理室中供给重整气体的第四步骤，对已经沉积在所述处理室中的导电膜或绝缘膜进行重整; 然后进行向处理室供给清洁气体的第五步骤，以及去除沉积在处理室中并包含重整的导电膜或绝缘膜的沉积物。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2011006783A Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底加工设备的方法
公开(公告)号：JP2011006783A
公开(公告)日：2011-01-13
申请号：JP2010115612
申请日：2010-05-19
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KAGA YUKINAO , SAITO TATSUYUKI , SAKAI MASANORI
IPC分类号： C23C16/455 , C23C16/56 , H01L21/285 , H01L21/31
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/45527 , C23C16/45544 , H01L21/76841
摘要： PROBLEM TO BE SOLVED: To provide a dense, low-resistive metal film having a smooth film surface at a low temperature in such a manner that its quality is made better compared with a titanium nitride film formed by a CVD method and the film deposition rate is made higher compared with a titanium nitride film formed by an ALD method, i.e., at high productivity.SOLUTION: The method of manufacturing a semiconductor device includes the steps of: carrying out an alternate supply process by which a first metal film is formed on a substrate placed in a processing chamber by alternately supplying at least one type of a metal compound that is an inorganic raw material and a reactant gas that has reactivity to the metal compound to the processing chamber more than once; carrying out a simultaneous supply process by which a second metal film is formed on the substrate placed in the processing chamber by simultaneously supplying at least one type of a metal compound that is an inorganic raw material and a reactant gas that has reactivity to the metal compound to the processing chamber once so that the metal compound and the reactant gas are mixed with each other; and carrying out a modification process by which at least one of the first metal film and the second metal film is modified using at least one of the reactant gas and an inert gas after at least one of the alternate supply process and the simultaneous supply process.
摘要翻译：要解决的问题：提供一种在低温下具有光滑膜表面的致密的低电阻金属膜，使得与通过CVD法形成的氮化钛膜相比，其质量更好，并且膜沉积速率与通过ALD法形成的氮化钛膜相比具有更高的生产率。解决方案：半导体器件的制造方法包括以下步骤：进行在第一金属膜上形成的交替供给工艺通过交替地向所述处理室供给至少一种类型的无机原料的金属化合物和与所述金属化合物具有反应性的反应物气体而放置在处理室中的基板; 通过同时供给至少一种作为无机原料的金属化合物和与金属化合物具有反应性的反应气体，进行同时供给工序，在该基板上形成第二金属膜，一次加工到处理室，使得金属化合物和反应气体彼此混合; 并且进行至少一个第一金属膜和第二金属膜在至少一个反应气体和惰性气体中的至少一个之后进行改性的修改方法，其中至少一个在交替供给处理和同时供给处理之中。

7. 发明专利

JP2012119432A Method of manufacturing semiconductor device, substrate processing apparatus, and semiconductor device 有权
标题翻译：制造半导体器件的方法，衬底处理装置和半导体器件
公开(公告)号：JP2012119432A
公开(公告)日：2012-06-21
申请号：JP2010266741
申请日：2010-11-30
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SAKAI MASANORI , SAITO TATSUYUKI , KAGA YUKINAO , YOKOGAWA TAKASHI
IPC分类号： H01L21/285 , C23C16/34 , H01L21/28 , H01L29/423 , H01L29/49
摘要： PROBLEM TO BE SOLVED: To reduce manufacturing cost and to improve productivity by forming a gate electrode having a stacked structure in the same processing chamber.SOLUTION: The method of manufacturing a semiconductor device comprises: a substrate loading step of loading a substrate into a processing chamber; a first nitride film formation step of forming a titanium aluminum nitride film on the substrate; a second nitride film formation step of forming a titanium nitride film on the substrate; and a substrate taking-out step of taking out the substrate from the processing chamber. The first nitride film formation step and the second nitride film formation step are performed in the same processing chamber.
摘要翻译：要解决的问题：通过在相同的处理室中形成具有堆叠结构的栅电极来降低制造成本并提高生产率。解决方案：制造半导体器件的方法包括：将衬底加载到处理室中的衬底加载步骤; 在基板上形成氮化铝钛膜的第一氮化物膜形成步骤; 在所述基板上形成氮化钛膜的第二氮化膜形成工序; 以及从处理室取出基板的基板取出工序。第一氮化物膜形成步骤和第二氮化物膜形成步骤在相同的处理室中进行。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2012084602A Semiconductor device manufacturing method and substrate processing device system 审中-公开
标题翻译：半导体器件制造方法和衬底处理器件系统
公开(公告)号：JP2012084602A
公开(公告)日：2012-04-26
申请号：JP2010227649
申请日：2010-10-07
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YAMAMOTO KATSUHIKO , TAKEBAYASHI YUJI , SAITO TATSUYUKI
IPC分类号： H01L21/316 , C23C16/56 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a substrate processing device system which can decrease defects in an insulator film.SOLUTION: A wafer where a TiN film as a metal film and a ZrOfilm as an insulator film are formed is carried into a processing chamber. Into the processing chamber, Ois supplied as modifier gas modifying the ZrOfilm. The wafer is irradiated with electromagnetic waves to excite dipoles contained in the ZrOfilm to modify the ZrOfilm. Then, the wafer is carried out of the processing chamber.
摘要翻译：要解决的问题：提供可以减少绝缘膜的缺陷的半导体器件制造方法和衬底处理器件系统。解决方案：形成作为金属膜的TiN膜和作为绝缘膜的ZrO 2 膜的晶片被载入处理室。作为调整气体，修改ZrO 2 膜，将O 2 作为改性气体供入处理室。用电磁波照射晶片以激发包含在ZrO 2 膜中的偶极子，以修饰ZrO 2 膜。然后，晶片从处理室中进行。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2011252221A Manufacturing method of semiconductor device and substrate treatment apparatus 有权
标题翻译：半导体器件和衬底处理设备的制造方法
公开(公告)号：JP2011252221A
公开(公告)日：2011-12-15
申请号：JP2010128417
申请日：2010-06-04
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SAITO TATSUYUKI , SAKAI MASANORI , KAGA YUKINAO , YOKOGAWA TAKASHI
IPC分类号： C23C16/455 , H01L21/285
CPC分类号： C23C16/4408 , C23C16/34 , C23C16/4412 , C23C16/45534 , C23C16/45544 , C23C16/52 , H01L21/02186 , H01L21/02274 , H01L21/0228 , H01L21/28562 , H01L21/76841
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device for forming a metal film which is dense and has low impurity concentration caused by a raw material and further has low resistivity, and to provide a substrate treatment apparatus.SOLUTION: A film of less than one atomic layer is formed on the surface of a substrate by performing: a first step of supplying a first raw material to a treatment chamber, in which the substrate is housed, to make the surface of the substrate adsorb the first raw material; a second step of supplying a reaction gas different from the first raw material to the treatment chamber before the adsorption of the first raw material on the substrate surface is saturated, to cause to react with the first raw material adsorbed on the substrate; a third step of removing an atmosphere within the treatment chamber; and a fourth step for supplying a modifying gas for modifying the first raw material into the treatment chamber to modify the first raw material adsorbed on the substrate.
摘要翻译：要解决的问题：提供一种用于形成致密且由原料引起的低杂质浓度的金属膜的半导体器件的制造方法，并且还具有低电阻率，并且提供一种衬底处理设备。解决方案：通过执行以下步骤，在基板的表面上形成小于一个原子层的膜：第一步骤，将第一原料供应到容纳基板的处理室中，以使第基板吸附第一原料; 在将第一原料吸附在基板表面上之前，将不同于第一原料的反应气体供给到处理室的第二工序饱和，与吸附在基板上的第一原料反应; 除去处理室内的气氛的第三步骤; 以及第四步骤，用于将修改气体用于将第一原料改性到处理室中以改变吸附在基材上的第一原料。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2011168881A Method of manufacturing semiconductor device and substrate processing apparatus 审中-公开
标题翻译：制造半导体器件和衬底加工设备的方法
公开(公告)号：JP2011168881A
公开(公告)日：2011-09-01
申请号：JP2010266422
申请日：2010-11-30
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KAGA YUKINAO , SAITO TATSUYUKI , SAKAI MASANORI , YOKOGAWA TAKASHI
IPC分类号： C23C16/44
CPC分类号： H01L21/32051 , C23C16/34 , C23C16/45523 , C23C16/45574 , H01L21/28556 , H01L21/28562
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and a substrate processing apparatus capable of providing a titanium nitride film that is higher in quality than a titanium nitride film formed by the conventional CVD method at a higher film-forming rate, that is, with higher productivity than a titanium nitride film formed by an ALD (Atomic Layer Deposition) method.
SOLUTION: The method includes: a substrate loading step for loading a substrate into a processing chamber; a film forming step for forming a predetermined film on the substrate by simultaneously supplying a first processing gas and a second processing gas into the processing chamber; a removing step for stopping the supply of the first processing gas and the second processing gas and removing the first processing gas and the second processing gas remaining in the processing chamber; a modifying step for modifying the film formed on the substrate by supplying the second processing gas into the processing chamber after the removing step; and a substrate unloading step for unloading the substrate from the processing chamber. In the film forming step, a time period for supplying the second processing gas into the processing chamber is longer than a time period for supplying the first processing gas into the processing chamber.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体器件的制造方法和能够提供比通过常规CVD法形成的氮化钛膜更高质量的氮化钛膜的衬底处理设备，形成速率，即比通过ALD（原子层沉积）方法形成的氮化钛膜具有更高的生产率。解决方案：该方法包括：将衬底加载到处理室中的衬底加载步骤; 用于通过将第一处理气体和第二处理气体同时供给到所述处理室中而在所述基板上形成规定的膜的成膜工序; 用于停止供应第一处理气体和第二处理气体并去除残留在处理室中的第一处理气体和第二处理气体的去除步骤; 修改步骤，用于通过在去除步骤之后将第二处理气体供应到处理室中来修饰形成在基板上的膜; 以及用于从所述处理室卸载所述基板的基板卸载步骤。在成膜步骤中，用于将第二处理气体供应到处理室中的时间段比用于将第一处理气体供应到处理室的时间段长。版权所有（C）2011，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式