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1. 发明专利

JP2013034020A Cleaning method, method for manufacturing semiconductor device, and device for processing substrate 审中-公开
标题翻译：清洁方法，制造半导体器件的方法和用于处理衬底的器件
公开(公告)号：JP2013034020A
公开(公告)日：2013-02-14
申请号：JP2012247423
申请日：2012-11-09
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： OKUDA KAZUYUKI , SAKAI MASANORI , KAGAYA TORU
IPC分类号： H01L21/31 , C23C16/44 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To perform uniform etching, and perform uniform cleaning in a reaction tube by solving problems in conventional etching gas supply.SOLUTION: A cleaning method includes: a first step where an exhaust air is completely stopped or is exhausted at an exhaust amount that does not affect the uniform diffusion of a cleaning gas from a predetermined time point before the cleaning gas is supplied to the reaction chamber until the time point that several seconds elapse from the beginning of the cleaning gas supply to the reaction chamber and the cleaning gas is supplied until a pressure in the reaction chamber becomes 10 Torr or higher; and a second step where the reaction chamber is exhausted so as to lower the pressure in the reaction chamber. One or more cycles of the first step and the second step are conducted.
摘要翻译：要解决的问题：通过解决常规蚀刻气体供应中的问题，进行均匀蚀刻，并在反应管中进行均匀的清洁。解决方案：一种清洁方法，包括：第一步骤，其中在清洁气体被供应之前，排气被完全停止或排出，排气量不会影响清洁气体从预定时间点的均匀扩散反应室直到从清洁气体供应开始到反应室经过几秒的时间点，并且提供清洁气体直到反应室中的压力变为10托或更高; 以及第二步骤，其中反应室被排出以降低反应室中的压力。进行第一步骤和第二步骤的一个或多个循环。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2012089886A Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：JP2012089886A
公开(公告)日：2012-05-10
申请号：JP2012011861
申请日：2012-01-24
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SAKAI MASANORI , SHIMA NOBUHITO , OKUDA KAZUYUKI
IPC分类号： H01L21/31 , C23C16/44
CPC分类号： C23C16/4405 , C23C16/45536
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which effectively removes chemical elements contained in a cleaning gas.SOLUTION: A manufacturing method of a semiconductor device includes a process in which a substrate is carried in a processing chamber, a process in which multiple reactant gases are supplied alternately to the processing chamber to form a film on the substrate, a process in which the substrate is carried out from the processing chamber, a process in which a cleaning gas is supplied to the interior of the processing chamber to clean the interior of the processing chamber, and a process in which all of the multiple reactant gases are supplied to the processing chamber to remove chemical elements contained in the cleaning gas supplied to the processing chamber.
摘要翻译：解决的问题：提供有效地去除清洁气体中所含的化学元素的半导体器件的制造方法。解决方案：半导体器件的制造方法包括其中在处理室中承载衬底的过程，其中多个反应气体被交替地供应到处理室以在衬底上形成膜的工艺，工艺其中从处理室执行基板，其中将清洁气体供应到处理室的内部以清洁处理室的内部的过程以及其中供应所有多种反应气体的过程到处理室以除去供应到处理室的清洁气体中包含的化学元素。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2011155033A Method of manufacturing semiconductor device, and semiconductor device 审中-公开
标题翻译：制造半导体器件的方法和半导体器件
公开(公告)号：JP2011155033A
公开(公告)日：2011-08-11
申请号：JP2010013863
申请日：2010-01-26
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： ASHITANI ATSUHIKO , TAKEBAYASHI YUJI , SAKAI MASANORI , OGURA SHINTARO
IPC分类号： H01L21/316 , C23C16/40 , C23C16/56 , H01L21/31 , H01L21/8242 , H01L21/8247 , H01L27/108 , H01L27/115 , H01L29/78 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To obtain a capacitor insulating film having a crystal structure of high dielectric constant by reducing the effect of crystallinity of an underling film. SOLUTION: A method of manufacturing a semiconductor device includes an amorphous film formation step for forming an amorphous film 320 on a crystalline film 310 which is formed on a substrate 200 and a crystalline insulating film formation step for forming an insulating film 330 having a crystal structure controlled independently from the crystal structure of the crystalline film 310 on the amorphous film 320. The crystalline insulating film formation step includes a phase transition step for causing phase transition of at least a part of the insulating film 330 to the tetragonal system by heating the substrate 200. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：通过降低底膜的结晶度的影响，获得具有高介电常数的晶体结构的电容器绝缘膜。解决方案：一种制造半导体器件的方法包括：在形成在衬底200上的结晶膜310上形成非晶膜320的非晶形成步骤和用于形成绝缘膜330的结晶绝缘膜形成步骤，独立于非晶膜320上的晶体膜310的晶体结构控制的晶体结构。晶体绝缘膜形成步骤包括相变步骤，用于使至少一部分绝缘膜330相对于四方晶系的相转变为加热基板200.版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2011035434A Method of manufacturing semiconductor device, and cleaning method 有权
标题翻译：制造半导体器件的方法和清洁方法
公开(公告)号：JP2011035434A
公开(公告)日：2011-02-17
申请号：JP2010257048
申请日：2010-11-17
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： OKUDA KAZUYUKI , SAKAI MASANORI , KAGAYA TORU
IPC分类号： H01L21/318 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To perform uniform etching, and eventually perform uniform cleaning in a reaction tube.
SOLUTION: This cleaning method includes: a first process of carrying a substrate into a reaction tube; a second process of supplying a plurality of reaction gases into the reaction tube to treat the substrate; a third process of carrying out the treated substrate to the outside of the reaction tube; a fourth process of setting the inside of the reaction tube at base pressure; a fifth process of supplying a cleaning gas at a first flow rate to gradually increase the pressure in the reaction tube with exhaust in the reaction tube substantially stopped; a sixth process of supplying the cleaning gas at a second flow rate smaller than the first flow rate to fill and seal the cleaning gas in the reaction tube; and a seventh process of exhausting the inside of the reaction tube with the supply of the cleaning gas stopped; wherein the first process through the third process are repeated by two or more cycles to treat the substrate, and thereafter the fourth process through the seventh process are repeated by two or more cycles to remove a reaction product adhering to the inside of the reaction tube.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：进行均匀蚀刻，最终在反应管中进行均匀的清洗。解决方案：该清洁方法包括：将基底携带到反应管中的第一过程; 将多个反应气体供应到反应管中以处理基板的第二过程; 将经处理的基板执行到反应管的外部的第三过程; 将反应管的内部设定在基础压力的第四过程; 以第一流量供应清洁气体以逐渐增加反应管中的压力的第五过程，其中反应管中的排气基本上停止; 以比第一流量小的第二流量供给清洁气体以填充和密封反应管中的清洁气体的第六过程; 以及停止供给清洗气体的排气反应管内部的第七工序; 其中通过第三工艺的第一工艺通过两个或多个循环重复处理衬底，然后通过两个或更多个循环重复第七步骤的第四步骤以除去附着在反应管内部的反应产物。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2010206050A Method of manufacturing semiconductor device, and substrate processing apparatus 审中-公开
标题翻译：制造半导体器件的方法和基板处理装置
公开(公告)号：JP2010206050A
公开(公告)日：2010-09-16
申请号：JP2009051622
申请日：2009-03-05
申请人： Hitachi Kokusai Electric Inc , Taiyo Nippon Sanso Corp , 大陽日酸株式会社 , 株式会社日立国際電気
发明人： MIYA HIRONOBU , YAMAZAKI HIROHISA , SAKAI MASANORI , TAKEBAYASHI YUJI , SHIBATA TOSHITADA , INOUE MINORU
IPC分类号： H01L21/316 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, wherein mixing of boron into a high dielectric constant film is suppressed while damage to an internal wall of a processing chamber etc., and a substrate processing apparatus is suppressed. SOLUTION: The method of manufacturing the semiconductor device includes: a step of carrying a substrate 200 in the processing chamber 201; a step of performing processing for forming the high dielectric constant film on the substrate 200 by supplying processing gases 232a, 232b into the processing chamber 201; a step of carrying the substrate having been processed out of the processing chamber 201; a step of cleaning the inside of the processing chamber 201 by supplying a halogen-based gas 232c containing boron into the processing chamber 201 to remove deposits including the high dielectric constant film sticking in the processing chamber 201; and a step of removing or fixing boron remaining in the processing chamber after cleaning by supplying an oxygen-based gas 232d into the processing chamber 201. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造半导体器件的方法，其中抑制硼在高介电常数膜中的混合，同时抑制处理室等的内壁和衬底处理装置的损坏。解决方案：制造半导体器件的方法包括：在处理室201中承载衬底200的步骤; 通过将处理气体232a，232b供给到处理室201中来进行在基板200上形成高介电常数膜的处理的步骤; 将已经处理的基板搬出处理室201的步骤; 通过向处理室201内供给含有硼的卤素系气体232c，除去粘附在处理室201内的高介电常数膜的沉积物，清洗处理室201的内部的工序; 以及通过将氧基气体232d供给到处理室201中来清洁之后去除或固定残留在处理室中的硼的步骤。（C）2010，JPO＆INPIT

6. 发明专利

JP2009295729A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2009295729A
公开(公告)日：2009-12-17
申请号：JP2008146752
申请日：2008-06-04
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SAKAI MASANORI , SASAKI SHINYA
IPC分类号： H01L21/31 , C23C16/455 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of securing uniformity of processing in a substrate surface and between substrates even in the case of processing at a high temperature. SOLUTION: A U-shaped tubular first supply nozzle and a straight tubular second gas supply nozzle 68 are provided in a reaction tube 31 forming a processing chamber 32, and a plurality of jets 59 are arranged in a portion below the bottom of the U shape of the first gas supply nozzle, and a plurality of jets 69 are arranged in a half in the downstream side of the second gas supply nozzle 68, and the uppermost jet 59a in the group of jets 59 of the first gas supply nozzle is arranged below a height position of the uppermost jet 69a of the second gas supply nozzle 68. Since inlet lengths for which trimethylaluminum gas travels after entry to a heating region in the processing chamber 32 till being jetted from the group of jets 59 and the group of jets 69 are long and are approximately equal to each other, the supply amount of trimethylaluminum gas is uniform above and below the boat 40 to enhance uniformity within a wafer surface formed on a wafer at 600°C and uniformity between wafers. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供即使在高温处理的情况下也能够确保基板表面和基板之间的处理的均匀性的基板处理装置。解决方案：在形成处理室32的反应管31中设置有U形管状第一供给喷嘴和直管状第二气体供给喷嘴68，并且多个喷嘴59布置在第一气体供给喷嘴的U形，以及多个喷射口69配置在第二气体供给喷嘴68的下游侧的一半中，第一气体供给喷嘴的喷射流59组中的最上侧的喷流59a 布置在第二气体供应喷嘴68的最上部喷嘴69a的高度位置的下方。由于三甲基铝气体在进入处理室32中的加热区域之后行进的入口长度直到从喷嘴组59和组喷嘴69长度大致相等，三甲基铝气体的供给量在船形件40上方和下方是均匀的，以提高在600℃下形成在晶片上的晶片表面内的均匀性，并且晶片之间的均匀性 s。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009218600A Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2009218600A
公开(公告)日：2009-09-24
申请号：JP2009061423
申请日：2009-03-13
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SAKAI MASANORI , TAKEBAYASHI YUJI , KATO TSUTOMU , SASAKI SHINYA , YAMAZAKI HIROHISA
IPC分类号： H01L21/31 , C23C16/455 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which is capable of promoting supplying gas to spaces between adjacent substrates without reducing the number of substrates which can be collectively processed. SOLUTION: The method of manufacturing a semiconductor device includes the steps of: carrying substrates 10 stacked in many stages in a horizontal posture into a processing chamber 4; processing the substrates 10 by supplying a processing gas into the processing chamber 4 from one or more processing gas supply nozzles 22a and 22b extending along an inner wall of the processing chamber 4 in the stacking direction of the substrates 10 and by supplying an inactive gas into the processing chamber from a pair of inactive gas supply nozzles 22c and 22d provided so as to extend along the inner wall of the processing chamber 4 in the stacking direction of the substrates 10 and to sandwich the processing gas supply nozzles 22a and 22b from both sides thereof along a circumferential direction of the substrates 10; and carrying the processed substrates out from the processing chamber. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种半导体器件的制造方法，该半导体器件能够促进将相邻衬底之间的空间供给气体，而不会减少可以共同处理的衬底的数量。解决方案：制造半导体器件的方法包括以下步骤：将以水平姿态多级堆叠的衬底10输送到处理室4中; 通过从处理室4的内壁沿着基板10的层叠方向延伸的一个或多个处理气体供给喷嘴22a和22b向处理室4供给处理气体，并且通过将惰性气体供给到来自一对非活性气体供给喷嘴22c和22d的处理室，其设置成沿着基板10的层叠方向沿着处理室4的内壁延伸，并且从两侧夹持处理气体供给喷嘴22a和22b 沿着基板10的圆周方向; 并将处理过的基板从处理室中输送出去。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2009152640A Substrate processing device 有权
标题翻译：基板处理装置
公开(公告)号：JP2009152640A
公开(公告)日：2009-07-09
申请号：JP2009090011
申请日：2009-04-02
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： MIYA HIRONOBU , TOYODA KAZUYUKI , SATO TAKETOSHI , ASAI MASAYUKI , MIZUNO KANEKAZU , SAKAI MASANORI , OKUDA KAZUYUKI , HOTTA HIDEKI
IPC分类号： H01L21/316 , C23C16/455 , C23C16/505 , H01L21/31 , H01L21/318
CPC分类号： C23C16/403 , C23C16/345 , C23C16/45536 , C23C16/45546 , C23C16/509 , H01L21/0214 , H01L21/0217 , H01L21/02178 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02332 , H01L21/0234 , H01L21/3141 , H01L21/3162 , H01L21/3185
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing device of a semiconductor device, which can form a high quality thin film even when the thin film is formed at a low temperature. SOLUTION: Until a film having a desired thickness is formed on a surface of a wafer 200, the substrate processing device repeats: a step of supplying a first reactant into a processing chamber 201 having the wafer 200 stored therein to cause a ligand-exchange reaction between a ligand as a reactive site existing on the surface of the wafer 200 and a ligand of the first reactant; a step of supplying a second reactant into the processing chamber 201 to cause a ligand-exchange reaction to change the ligand after the exchange into a reactive site; and a step of supplying a plasma-excited third reactant into the processing chamber 201 to cause a ligand-exchange reaction to change a ligand which has not been exchange-reacted into the reactive site, into the reactive site. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：为了提供即使当在低温下形成薄膜时也能够形成高质量薄膜的半导体器件的衬底处理器件。解决方案：在晶片200的表面上形成具有期望厚度的膜之前，基板处理装置重复：将第一反应物供应到晶片200存储在其中以引起配体的处理室201中的步骤 - 作为存在于晶片200的表面上的反应性位点的配体与第一反应物的配体之间的交换反应; 将第二反应物供应到处理室201中以使配体交换反应在交换成反应性位点后改变配体的步骤; 以及将等离子体激发的第三反应物供给到处理室201中以使配体交换反应将未被交换反应的配体改变为反应性位点的步骤进入反应性位点。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2008078448A Substrate treatment device 审中-公开
标题翻译：基板处理装置
公开(公告)号：JP2008078448A
公开(公告)日：2008-04-03
申请号：JP2006257076
申请日：2006-09-22
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SAKAI MASANORI , MIZUNO KANEKAZU , SASAKI SHINYA , YAMAZAKI HIROHISA
IPC分类号： H01L21/31 , H01L21/316
CPC分类号： C23C16/45578 , C23C16/45546 , C23C16/45548 , C23C16/54 , H01L21/3141 , H01L21/31645
摘要： PROBLEM TO BE SOLVED: To provide a means which can make uniform the film thickness of a wafer when a film is formed without being limited to a batch-type substrate treatment device.
SOLUTION: A first gas supply means further comprises at least one first inlet port for introducing a crude material gas into a treatment chamber 201, and the first inlet port is opened so as to avoid a direction on the side of a substrate accommodated in the treatment chamber 201. A second gas supply means further comprises at least one second inlet port for introducing an acidic gas into the treatment chamber 201, and the second inlet port is opened toward a direction on the side of the substrate accommodated in the treatment chamber 201. A controller is constituted to control the first gas supply means, the second gas supply means and a discharge means, to alternately supply and discharge the crude material gas and the acidic gas with respect to the treatment chamber 201, and to form a desired film on the substrate.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以使薄膜形成时可以使晶片的膜厚均匀化的装置，而不限于间歇式基板处理装置。解决方案：第一气体供应装置还包括至少一个用于将粗料气体引入处理室201中的第一入口端口，并且第一入口端口被打开以避免容纳在衬底的侧面上的方向在处理室201中。第二气体供给装置还包括至少一个用于将酸性气体引入处理室201中的第二入口，并且第二入口朝向容纳在处理中的基底侧的方向打开控制器被构造成控制第一气体供给装置，第二气体供给装置和排出装置，以相对于处理室201交替地供给和排出原料气体和酸性气体，并且形成所需的薄膜在基板上。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2006190760A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2006190760A
公开(公告)日：2006-07-20
申请号：JP2005000570
申请日：2005-01-05
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SAKAI MASANORI , YOKOGAWA TAKASHI
IPC分类号： H01L21/683 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a substrate processor capable of increasing the number of substrates to be processed and keeping uniformity in film thickness of a processed substrate. SOLUTION: A substrate holding means boat 217 has four columns 214, 214, 214 and 214 for example and an annular member ring 216 supported by the columns 214, 214, 214 and 214. The ring 216 has a first notch 212 with part of a circumference missing, and two second notches 213 and 213 for example with part of an inner peripheral surface missing. The position of the first notch 212 of each of rings 216 supported by the columns 214, 214, 214 and 214 does not vertically coincide with the position of the first notch 212 of another ring 216 at least located just above it, but is shifted by 180° for example. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够增加待处理的基板的数量并保持被处理基板的膜厚度的均匀性的基板处理器。解决方案：衬底保持装置舟皿217具有例如四个柱214,214,214和214以及由柱214,214,214和214支撑的环形构件环216.环216具有第一凹口212，缺少圆周的一部分，以及两个第二凹口213和213，例如一部分内周表面缺失。由列214,214,214和214支撑的每个环216的第一凹口212的位置不与至少位于其上方的另一个环216的第一凹口212的位置垂直重合，而是偏移例如180°。版权所有（C）2006，JPO＆NCIPI

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