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1. 发明专利

JP2010114420A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2010114420A
公开(公告)日：2010-05-20
申请号：JP2009179630
申请日：2009-07-31
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： MIYA HIRONOBU , SAKAI MASANORI , MIZUNO KANEKAZU , TOYODA KAZUYUKI , TAKEBAYASHI YUJI , KATO TSUTOMU , ONO KENJI , MORIKAWA ATSUSHI , OKADA ITARU
IPC分类号： H01L21/316 , C23C16/452 , H01L21/31 , H01L21/8242 , H01L27/108
CPC分类号： C23C16/405 , C23C16/483 , H01L21/02164 , H01L21/02181 , H01L21/02189 , H01L21/02277 , H01L21/0228 , H01L21/3141 , H01L21/31608 , H01L21/31641 , H01L21/31645
摘要： PROBLEM TO BE SOLVED: To improve the coatability or loading effect of an oxide film without increasing the supply amount or supply time of an oxidant. SOLUTION: The method of manufacturing a semiconductor device includes a substrate loading step of loading at least one substrate to a processing chamber; an oxide film forming step of forming an oxide film on the substrate by alternately supplying a first reaction material and a second reaction material containing oxygen atoms to the processing chamber while heating the substrate; and a substrate unloading step of unloading the substrate from the processing chamber, wherein the forming of the oxide film is performed by keeping the substrate at a temperature equal to or lower than a self-decomposition temperature of the first reaction material and by irradiating the second reaction material with ultraviolet light. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提高氧化膜的涂布性或负载效果，而不增加氧化剂的供给量或供给时间。解决方案：制造半导体器件的方法包括将至少一个衬底装载到处理室的衬底加载步骤; 氧化膜形成步骤，通过在加热所述基板的同时向所述处理室交替地供给第一反应材料和含有氧原子的第二反应材料，在所述基板上形成氧化膜; 以及从处理室卸载基板的基板卸载步骤，其中通过将基板保持在等于或低于第一反应材料的自分解温度的温度下并通过照射第二反应材料来进行氧化膜的形成具有紫外线的反应物质。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2007027182A Substrate treatment apparatus 审中-公开
标题翻译：基板处理设备
公开(公告)号：JP2007027182A
公开(公告)日：2007-02-01
申请号：JP2005202914
申请日：2005-07-12
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： MORIKAWA ATSUSHI
IPC分类号： H01L21/205 , C23C16/455 , H01L21/22
摘要： PROBLEM TO BE SOLVED: To reduce the number of variable flow rate control valves of a supply system for supplying the same gases by a plurality of nozzles.
SOLUTION: A treatment apparatus 10 includes a treatment chamber 31 for treating a wafer 1 while holding the wafer by a boat 39; a first nozzle N1, a second nozzle N2, and a third nozzle N3 for supplying treatment gas to the treatment chamber 31; and a gas controller 46 for controlling the supply of the treatment gas. In the treatment apparatus, blowoff outlets of the first nozzle N1, second nozzle N2, and third nozzle N3 are located at upper, middle, and lower stages of the treatment chamber 31; and there are interposed opening/closing valves V1, V2, and V3 for intermittently controlling the supply of the treatment gas on supply lines S1, S2, and S3 of the first nozzle N1, second nozzle N2, and third nozzle N3. The variable flow rate control valve 45 may be installed on a main supply line 42 by controlling the supply of gas in a multiplex system by the opening/closing valves V1, V2, and V3, when supplying the same treatment gases to the upper, middle, and lower stages in the treatment chamber 31 through the first nozzle N1, second nozzle N2, and third nozzle N3.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：减少用于通过多个喷嘴供应相同气体的供应系统的可变流量控制阀的数量。解决方案：处理装置10包括处理室31，用于处理晶片1，同时通过舟皿39保持晶片; 用于向处理室31供给处理气体的第一喷嘴N1，第二喷嘴N2和第三喷嘴N3; 以及用于控制处理气体的供给的气体控制器46。在处理装置中，第一喷嘴N1，第二喷嘴N2，第三喷嘴N3的吹出口位于处理室31的上，中，下阶段，并且具有用于间歇地控制第一喷嘴N1，第二喷嘴N2和第三喷嘴N3的供给管线S1，S2和S3上的处理气体的供给的开闭阀V1，V2和V3。可变流量控制阀45可以通过控制通过开/关阀V1，V2和V3在多路复用系统中的气体供应而在主供应管线42上提供相同的处理气体到上，中，处理室31的下段通过第一喷嘴N1，第二喷嘴N2和第三喷嘴N3。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2004047716A Substrate processing equipment 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2004047716A
公开(公告)日：2004-02-12
申请号：JP2002202887
申请日：2002-07-11
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： MORIKAWA ATSUSHI
IPC分类号： H01L21/22 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To improve a processing quality of substrate processing equipment by preventing the influence of temperatures around a heater on a substrate being processed.
SOLUTION: The substrate processing equipment comprises a reaction tube 2 wherein a substrate 8 is housed and processed, the heater 3 which is arranged around the reaction tube and heats the substrate, and a heater cover 30 which is so arranged as to cover the exterior of the heater. A wall of the heater cover consists of a first principal plane 34 and a second principal plane 36 which constitute both surfaces of the wall, and a heat insulating material 35 interposed between the first and second principal planes. The first and second principal planes are formed out of a material having a thermal conductivity larger than that of the heat insulating material.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：通过防止加热器周围的温度对被处理的基板的影响来提高基板加工设备的加工质量。解决方案：基板处理设备包括反应管2，其中容纳和处理基板8，设置在反应管周围并加热基板的加热器3和加热器盖30，其被设置成覆盖加热器的外部。加热器盖的壁由构成壁的两个表面的第一主平面34和第二主平面36以及介于第一和第二主平面之间的隔热材料35组成。第一和第二主平面由导热率大于隔热材料的导热率的材料形成。版权所有（C）2004，JPO

4. 发明专利

JP2014168046A Substrate processing apparatus, semiconductor device manufacturing method and program 有权
标题翻译：基板加工设备，半导体器件制造方法和程序
公开(公告)号：JP2014168046A
公开(公告)日：2014-09-11
申请号：JP2014005264
申请日：2014-01-15
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TAKEBAYASHI YUJI , SHIMADA SHINICHI , MORIKAWA ATSUSHI
IPC分类号： H01L21/31 , C23C16/40 , H01L21/316
CPC分类号： H01L21/02233 , C23C16/405 , C23C16/452 , C23C16/45527 , C23C16/45561 , C23C16/45578 , H01L21/02189 , H01L21/02271 , H01L21/67109
摘要： PROBLEM TO BE SOLVED: To improve a manufacturing quality of a semiconductor device and manufacturing throughput of the semiconductor device.SOLUTION: A substrate processing apparatus comprises: a processing chamber for storing a substrate; a material gas supply system for supplying a material gas to the substrate; a first reaction gas supply system which supplies a reaction gas to the substrate through a first reaction gas supply tube; a second reaction gas supply system which supplies the reaction gas to the substrate through a second reaction gas supply tube connected to the first reaction gas supply tube, in which the second gas supply tube includes a gas storage part for storing the reaction gas and the reaction gas is supplied to the substrate through the gas storage part; and a control part for performing processing of supplying the material gas to the substrate by controlling the material gas supply system, the first reaction gas supply system and the second reaction gas supply system, and processing of supplying the reaction gas to the substrate from the first reaction gas supply tube and the second reaction gas supply tube.
摘要翻译：要解决的问题：提高半导体器件的制造质量和制造半导体器件的吞吐量。解决方案：基板处理设备包括：用于存储基板的处理室; 用于将材料气体供给到所述基板的原料气体供给系统; 第一反应气体供给系统，其通过第一反应气体供给管向反应气体供给反应气体; 第二反应气体供给系统，其通过与第一反应气体供给管连接的第二反应气体供给管向反应气体供给反应气体，其中第二气体供给管包括用于储存反应气体的气体存储部和反应通过气体存储部将气体供给到基板; 以及控制部，其通过控制所述原料气体供给系统，所述第一反应气体供给系统和所述第二反应气体供给系统，进行将所述原料气体供给到所述基板的处理，以及从所述第一反应气体供给系统向所述基板供给所述反应气体的处理反应气体供应管和第二反应气体供应管。

5. 发明专利

JP2011114002A Substrate treating device 审中-公开
标题翻译：基板处理设备
公开(公告)号：JP2011114002A
公开(公告)日：2011-06-09
申请号：JP2009266127
申请日：2009-11-24
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： MORIKAWA ATSUSHI
IPC分类号： H01L21/31 , C23C16/448
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing device capable of efficiently vaporizing a liquid material.
SOLUTION: The substrate treating device includes: a treatment chamber 70 for treating a wafer 14; a first gas supply pipe 80a, a first carrier gas supply pipe 100a and a first gas supply nozzle 96a for supplying an evaporated gas obtained by evaporating a liquid material by a vaporizer 82 into the treatment chamber 70; and a vacuum pump 114 for evacuating the atmosphere of the treatment chamber 70. The evaporator 82 includes two or more evaporation chambers for introducing the liquid material to evaporate the liquid material.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供能够有效地蒸发液体材料的半导体制造装置。解决方案：基板处理装置包括：用于处理晶片14的处理室70; 第一气体供给管80a，第一载气供给管100a和第一气体供给喷嘴96a，用于将通过蒸发器82蒸发液体材料而获得的蒸发气体供给到处理室70中; 以及用于抽空处理室70的气氛的真空泵114.蒸发器82包括用于引入液体材料以蒸发液体材料的两个或更多个蒸发室。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2010123752A Substrate treatment apparatus 审中-公开
标题翻译：基板处理设备
公开(公告)号：JP2010123752A
公开(公告)日：2010-06-03
申请号：JP2008295953
申请日：2008-11-19
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： MORIKAWA ATSUSHI
IPC分类号： H01L21/31 , C23C16/52 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To prevent the deterioration of uniformity in wafer in-plane film thickness distribution. SOLUTION: A substrate treatment apparatus includes: a treatment chamber 32 for collectively storing a plurality of wafers 1; a boat 25 for holding by lamination the plurality of wafers by three holding columns 25c; a rotary drive device 28 for rotating the boat 25; and a blow-out port 46 for injecting treatment gas into the treatment chamber 32. A controller 60 controls the rotary drive device 28 with a rotary speed and an angle position as parameters, thereby increasing and decreasing the speed to rotate the boat 25 according to angle positions of the holding columns 25c. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了防止晶片面内膜厚分布的均匀性的劣化。解决方案：基板处理装置包括：用于共同存储多个晶片1的处理室32; 用于通过三个保持柱25c层叠多个晶片来保持的船25; 用于使船25旋转的旋转驱动装置28; 以及用于将处理气体注入处理室32的吹出口46.控制器60以旋转速度和角度位置作为参数来控制旋转驱动装置28，从而根据下述方式增加和减少转动船25的速度保持柱25c的角度位置。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009123946A Substrate processing apparatus and method of manufacturing semiconductor device 审中-公开
标题翻译：基板加工装置及制造半导体装置的方法
公开(公告)号：JP2009123946A
公开(公告)日：2009-06-04
申请号：JP2007296774
申请日：2007-11-15
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： FUJISHIRO MASATAKA , MORIKAWA ATSUSHI , TSUKAMOTO HIDEYUKI
IPC分类号： H01L21/31 , C23C16/52
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a method of manufacturing a semiconductor device that prevent the occurrence of substrate failures. SOLUTION: The substrate processing apparatus 100 includes a reaction container 203, a gas supply pipe 312, an exhaust pipe 231, pressure instruments 420 and 520, an exhaust system 246 and a controller 240. Before processing of a wafer 200, the controller 240 exhausts air from the reaction container 203. It sets a first pressure value which is measured when the pressure in the reaction container 203 is set to a predetermined set pressure value as a reference value and previously sets a predetermined first pressure range smaller than the reference value and a predetermined second pressure range larger then the reference value. After processing of the wafer 200, the controller 240 exhausts air from the reaction container 203 again. It performs a corrective process which is different between a case in which a second pressure value which is measured when the pressure in the reaction container 203 is set as the set pressure value becomes a smaller pressure value than the first pressure range and a case in which it becomes a larger pressure value than the second pressure range. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种基板处理装置和制造半导体装置的方法，该半导体装置防止发生基板故障。解决方案：基板处理装置100包括反应容器203，气体供给管312，排气管231，压力装置420和520，排气系统246和控制器240.在处理晶片200之前，控制器240从反应容器203排出空气。当反应容器203中的压力设定为预定设定压力值作为参考值时，设定第一压力值，并且预先设定小于参考值和大于参考值的预定的第二压力范围。在处理晶片200之后，控制器240再次从反应容器203排出空气。在执行将反应容器203的压力设定为设定压力值时测量的第二压力值变得比第一压力范围更小的压力值的情况下，进行校正处理，它变得比第二压力范围更大的压力值。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2006278660A Substrate processing device 审中-公开
标题翻译：基板处理装置
公开(公告)号：JP2006278660A
公开(公告)日：2006-10-12
申请号：JP2005094853
申请日：2005-03-29
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： OKADA ITARU , INOKUCHI YASUHIRO , MORIKAWA ATSUSHI
IPC分类号： H01L21/205 , H01L21/20
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing device of a hot wall type which performs selective growth for an epitaxial film comprising Si in an Si surface of a product substrate at a lower cost.
SOLUTION: In the substrate processing device of a hot wall type for performing selective growth for an epitaxial film comprising Si in an Si surface 132 of a product substrate 131, a dummy member 133 having a surface facing at least the peripheral part of the product substrate 131 is disposed in the upper side of the surface 132 for performing selective growth for the product substrate via a clearance, and an epitaxial film comprising Si is subjected to selective growth on the product substrate by providing an irregular part 137 in at least a periphery of the surface 135 facing the surface for selective growth of the product substrate of the dummy member 133.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种热成型的基板处理装置，其以较低的成本在产品基板的Si表面中对包含Si的外延膜进行选择性生长。解决方案：在用于对产品基板131的Si表面132中包含Si的外延膜进行选择性生长的热壁型基板处理装置中，具有面向至少外围部分的表面的虚拟构件133 产品基板131设置在表面132的上侧，用于经由间隙进行产品基板的选择性生长，并且通过至少提供包含Si的外延膜，在产品基板上进行选择性生长表面135的周边面向着表面，用于选择性地增长虚拟构件133的产品基底。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2005260062A Substrate treatment apparatus 审中-公开
标题翻译：基板处理设备
公开(公告)号：JP2005260062A
公开(公告)日：2005-09-22
申请号：JP2004070898
申请日：2004-03-12
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： MORIKAWA ATSUSHI
IPC分类号： H01L21/02
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus wherein bellows joints can effectively be heated.
SOLUTION: In the substrate treatment apparatus, a substrate 3 is contained in a treatment chamber 41, exhaust gas is exhausted while introducing treatment gas to the treatment chamber, and the substrate is heated to treat the substrate. Further, the bellows joints 61, 63 are provided at required positions of exhaust pipes 48, 49 for exhausting the exhaust gas, each bellows joint has an enclosed space formed of concentric double bellows, and thermal media are delivered through the space.
COPYRIGHT: (C)2005,JPO&NCIPI

10. 发明专利

JP2008294190A Substrate treating system 审中-公开
标题翻译：基板处理系统
公开(公告)号：JP2008294190A
公开(公告)日：2008-12-04
申请号：JP2007137636
申请日：2007-05-24
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： ONO KENJI , KATO TSUTOMU , MORIKAWA ATSUSHI , OKADA ITARU
IPC分类号： H01L21/31 , C23C16/448
摘要： PROBLEM TO BE SOLVED: To provide a substrate treating system which suppresses reliquefaction of a vaporized material and can improves the productivity.
SOLUTION: In the substrate treating system where liquid material is vaporized and is introduced into a treatment room and a desired film is formed on a substrate by equipped with a vaporizer which is provided with a vaporization chamber having several outlets, a flow passage for discharging the vaporized material from one of the outlets via a valve is arranged; another flow passage for supplying the vaporized material to a reaction chamber from another outlet via a valve is arranged; and discharge and supply of the vaporized material is switched by operating opening and closing of the valves.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种抑制汽化材料再液化并能提高生产率的基板处理系统。解决方案：在液体材料蒸发并引入处理室的基板处理系统中，通过装备有具有多个出口的蒸发室的蒸发器在基板上形成所需的膜，流路用于经由阀从一个出口排出蒸发的材料; 布置了用于经由阀从另一个出口将蒸发的材料供应到反应室的另一个流动通道; 并且通过操作阀的打开和关闭来切换蒸发的材料的排出和供应。版权所有（C）2009，JPO＆INPIT

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